• Title/Summary/Keyword: SIMS

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The application of rapid SIMS analysis for the identification of surface contamination in TFT-LCD manufacturing

  • Liou, Been-Chih;Chou, Yi-Hung;Chen, Chien-Chih;Eccles, John A.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.665-668
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    • 2006
  • Sodium is a serious contamination in LTPS TFT process. It causes the abnormal characteristics of TFT in operation. Contaminated areas can be seen in SEM images, but EDX measurements do not have adequate sensitivity to confirm the presence of superficial sodium residues. We employed SIMS as a fast analysis method to map the non-uniform distribution of sodium on the surface. SIMS can also indicate the thickness of the contamination.

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Study of neutral beam characteristics using SIMS depth profile and improvement of neutral beam flux (SIMS depth profile을 이용한 중성빔 특성 분석 및 flux 향상방안)

  • Kim, Seong-U;Park, Byeong-Jae;Min, Gyeong-Seok;Gang, Se-Gu;Yeom, Geun-Yeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2007.04a
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    • pp.61-62
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    • 2007
  • low angle forward reflected neutral beam etching system으로 식각한 후 SIMS depth profile을 이용하여 에너지 침투 깊이에 따른 중성빔 에너지를 분석하여 중성화 과정에서 에너지와 flux의 손실이 있었다. 기존의 two-grid 대신에 three-grid를 사용하여 에너지의 변화없이 이온 flux 및 중성빔 flux가 향상됨을 알 수 있었다.

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Compositional SIMS Depth Profiling of CIGS film

  • Kim, Gyeong-Jung;Hwang, Hye-Hyeon;Jang, Jong-Sik;Jeong, Yong-Deok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.367-367
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    • 2011
  • CIGS solar cell with copper, indium, gallium and selenium is a second generation solar cells for the lowering of the manufacturing cost. The relative ratio of the four elements is one of the most important measurement issues because the photovoltaic property of CIGS solar cell depends on the crystalline structure of the CIGS layer. However, there is no useful analysis method for the composition of the CIGS layer. Recently, AES depth profiling analysis of CIGS films has been studied with a reference material certified by inductively coupled plasma optical emission spectroscopy. However, there are some problems in AES depth profiling analysis of CIGS films. In this study, the in-depth profiling analysis was investigated by secondary ion mass spectrometry (SIMS) depth profiling analysis. We will present the compositional depth profiling of CIGS films by SIMS and its applications for the development of CIGS solar cells with high efficiency.

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Optimization of the Profiles in MeV Implanted Silicon Through the Modification of Electronic Stopping Power

  • Jung, Won-Chae
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.2
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    • pp.94-100
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    • 2013
  • The elements B, P and As can each be implanted in silicon; for the fabrication of integrated semiconductor devices and the wells in CMOS (complementary metal oxide semiconductor). The implanted range due to different implanted species calculated using TRIM (Transport of Ions in Matter) simulation results was considered. The profiles of implanted samples could be measured using SIMS (secondary ion mass spectrometry). In the comparison between the measured and simulated data, some deviations were shown in the profiles of MeV implanted silicon. The Moliere, C-Kr, and ZBL potentials were used for the range calculations, and the results showed almost no change in the MeV energy region. However, the calculations showed remarkably improved results through the modification of the electronic stopping power. The results also matched very well with SIMS data. The calculated tolerances of $R_p$ and ${\Delta}R_p$ between the modified $S_e$ of TRIM and SIMS data were remarkably better than the tolerances between the TRIM and SIMS data.

Structural Characterization of Branched Polyesters Using TOF-SIMS Combined with Transesterification

  • Lee, Yeonhee;Seunghee Han;Yoon, Jung-Hyeon;Hyuneui Lim;Moojin Suh
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.203-203
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    • 1999
  • Mass spectrometry technique provides the molecular weight distribution, data on the sequence of repeat units, polymer additives, and impurities, and structural information. time-of-Flight secondary Ion Mass Spectrometry (TOF-SIMS) has been used for structural characterization of various polymers1-2. the masses of repeat units and terminal groups and molecular weight distributions of polymers have been determined from their TOF-SIMS spectra. TOF-SMIS provides good sensitivity and structural specificity for high mass ions so that intact oligomers and large polymer fragments are observed. In this study, we investigated the detailed structural information on the oligomers and fragment ions of branched poly(1,3-butylene adipate) and branched poly[di(ethylene glycol) adipate] and the transesterification products of branched polyesters with trifluoroacetic acid or chloro difluoroacetic acid. Branched polyesters were chosen because they are important polymers but difficult to characterize; thus branched polyesters provide challanging test for TOF-SIMS. TOF-SIMS spectra of polyesters are obtained from thin polymer films cast from solution on a silver substrate. A good solvent for a polumer solution disrupts intermolecular forces between polymer chains but leaves the polumer intact. Transesterification reactions are potentially useful for characterization of high molecular weight and intractable polyesters. Transesterification products of polyesters and trifluoroacetic acid or an integral number of polyester repeat units and an additional diol. The progress of such reactions was monitored using peak intensities of reactants and products in TOF-SIMS spectra. The increasing abundance of tagged ions indicates that the reaction has progressed with time.

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Magnetic Sector SIMS의 Sample Holder 위치에 따르는 RSF (Relative Sensitivity Factor) 변화 검증

  • 홍성윤;이종필;홍태은;윤명노;민경열;이순영
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.192-192
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    • 1999
  • SIMS(Secondary Ion Mass Spectrometry)는 다른 표면 분석장비와 비교하여^g , pp m,^g , pp b 단위의 미량분석이 가능한 장비로서, 특히 depth Profiling을 위한 dynamic SIMS는 Mass Spectrometer의 종류에 따라 Quadrupole SIMS (Q-SIMS)와, Magnetic Sector SIMS (M-SIMS)로 분류된다. 한편, Q-SIMS와 달리 M-SIMS의 경우, Transmission을 높여 주기 위해 Sample Holder에 수 keV의 bias를 걸어 주는데, 이로 인하여 분석 원소에 대한 Sensitivity가 향상되어 지는 반면, RSF의 변화와 같은 분석상의 Artifact가 발생하게 된다. 일반적으로 Q-SIMS의 경우에는 RSF의 RSD(Relative Standard Deviation)가 1%이내에서 보고되고 있지만 M-SIMS에 있어서는 이러한 Deviation이 M-SIMS보다 크게 나타난다. 이 차이는 주로 Sample Holder와 Immersion Lens 사이에 형성되는 Magnetic Field의 왜곡과 Spectrometer의 문제로부터 발생한다. 본 논문에서는 Sample Holder의 종류 및 holder so window 위치에 따라 RSF의 차이를 측정하고 그 data를 RS/1 통계 Package를 이용하여 계량적으로 검증하였으며, 그 차이의 원인과 대책을 제시하고자 한다. 실험에 사용된 Sample은 Si(100) p-type Wafer에 Boron을 이온 주입하여 제작하였다. 이온 주입 장비는 Varian E-500HP이며, 5.0E13 ions/cm2의 dose양을 80keV의 Energy로 각각 7도와 22도의 Tilt와 Twist Angle로 이온 주입을 하였다. SIMS분석에 사용된 Sample Holder는 각각 3 Hole, 9 Hole Type HOlder이며, 분석은 Cameca IMS-6f를 사용하여 B에 대한 Matrix Peak으로 28Si++를 얻었다. 실험 결과 3 Hole Type Sample Holder의 경우 RSF의 RSD는 5.84%, 9Hle Type Sample Holder의 경우는 14.3%로 나타났으나 분석 Window의 위치에 따르는 Grouping을 실시한 결과, 3 Hole Type Sample Holder의 경우 1.2%, 9Hole Type Sample Holder의 경우 9.8%로 RSF의 변화가 감소하였다. 이러한 Deviation은 Sample Holder를 Mount시킬 때 세 개의 Screw를 이용하여 Immersion Lens와의 평형을 잡아주기 때문에 발생하며, 이 Munting을 정확히 해줌으로써 RSF의 변화를 줄일 수 있으나, 실제로 완벽한 Mounting이 불가능하기 때문에 RSF를 일정하게 하기 위해서는 Sample Holder so Window의 취치를 일정하게 설정한 후 분석을 실시해야 한다고 판단된다.

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Quantitative Surface Analysis of Co-Ni and Au-Cu alloys by XPS and SIMS (XPS와 SIMS에 의한 Co-Ni과 Au-Cu 합금표면 정량분석 연구)

  • 김경중;문대원;이광우
    • Journal of the Korean Vacuum Society
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    • v.1 no.1
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    • pp.106-114
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    • 1992
  • Abstract-Quantitative surface analysis of Co-Ni and Au-Cu alloys by XPS and SIMS was studied. For Co-Ni alloy, quantitative XPS analysis could be done within 1-2% relative error with pure element standards without any correction. For Au-Cu, quantitative XPS analysis was not possible without any correction. But it could be done with standard alloys of various composition within 1-2% relative error. Without standard alloys, Au-Cu alloys could be analyzed by XPS within 10% relative error with pure element standards. For SIMS analysis of Co-Ni alloys, the relative secondary ion yields of Co+/Nit has linear relation with ratio of each composition so that quantitative SIMS analysis was possible for Co-Ni alloys. Preliminary results of XPS round robin test of VAMAS-SCA Japan Project are given.

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Irish public opinion on assisted human reproduction services: Contemporary assessments from a national sample

  • Walsh, David J.;Sills, E. Scott;Collins, Gary S.;Hawrylyshyn, Christine A.;Sokol, Piotr;Walsh, Anthony P.H.
    • Clinical and Experimental Reproductive Medicine
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    • v.40 no.4
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    • pp.169-173
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    • 2013
  • Objective: To measure Irish opinion on a range of assisted human reproduction (AHR) treatments. Methods: A nationally representative sample of Irish adults (n=1,003) were anonymously sampled by telephone survey. Results: Most participants (77%) agreed that any fertility services offered internationally should also be available in Ireland, although only a small minority of the general Irish population had personal familiarity with AHR or infertility. This sample finds substantial agreement (63%) that the Government of Ireland should introduce legislation covering AHR. The range of support for gamete donation in Ireland ranged from 53% to 83%, depending on how donor privacy and disclosure policies are presented. For example, donation where the donor agrees to be contacted by the child born following donation, and anonymous donation where donor privacy is completely protected by law were supported by 68% and 66%, respectively. The least popular (53%) donor gamete treatment type appeared to be donation where the donor consents to be involved in the future life of any child born as a result of donor fertility treatment. Respondents in social class ABC1 (58%), age 18 to 24 (62%), age 25 to 34 (60%), or without children (61%) were more likely to favour this donor treatment policy in our sample. Conclusion: This is the first nationwide assessment of Irish public opinion on the advanced reproductive technologies since 2005. Access to a wide range of AHR treatment was supported by all subgroups studied. Public opinion concerning specific types of AHR treatment varied, yet general support for the need for national AHR legislation was reported by 63% of this national sample. Contemporary views on AHR remain largely consistent with the Commission for Assisted Human Reproduction recommendations from 2005, although further research is needed to clarify exactly how popular opinion on these issues has changed. It appears that legislation allowing for the full range of donation options (and not mandating disclosure of donor identity at a stipulated age) would better align with current Irish public opinion.

Local Thermal Equilibrium 모델에 의한 이차이온 질량분석의 정량화 방법

  • Gwak, Byeong-Hwa;Gwon, O-Jun
    • ETRI Journal
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    • v.10 no.2
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    • pp.63-69
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    • 1988
  • SIMS(Secondary Ion Mass Spectrometry) 분석 데이터의 정량화 방법으로 이온주입에 의한 실험적 접근법과 LTE(Local Thermal Equilibrium) 모델을 사용한 준이론적 접근법 2가지가 주로 논의되고 있다. 본 고에서는 LTE 모델을 사용, SIMS data를 정량화하는 방법에 대하여 기술하였으며 아울러 BASIC language로 된 간단한 LTE 프로그램을 제시하였다.

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