• 한국진공학회지
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• 제16권6호
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• pp.433-438
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• 2007

열처리 온도에 따른 Au 결정립 크기의 변화와 표면 거칠기 및 전기전도도를 연구하기 위해 dc 마그네트론 스퍼터링법을 사용하여 Si(111) 또는 Si(100) 기판위에 Au (30nm) 와 Ta (5 nm)/Au (30 nm) 를 증착하였다. 열처리 온도가 증가함에 따라 시료의결정립 크기가 증가하였고, 박막 표면 거칠기 또한 증가함을 확인하였다. Si/Au보다Si/Ta/Au구조에서 결정립 크기가 증가하였고 표면거칠기는 감소되었으며 Si(111)기판보다 Si(100) 기판위의 Ta/Au구조에서 전기 저항이 감소되었다. Si(100)/Au구조에 5 nm 두께의 Ta의 buffer layer를 삽입하여 표면 거칠기 정도를 낮춤과 동시에 열처리 온도를 적절히 조절하여 결정립 크기를 증가시킴으로서 전도성이우수한 양질의 Au 박막을 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.255-255
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• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

• 한국전자통신학회논문지
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• 제10권11호
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• pp.1251-1256
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• 2015

본 논문은 비정질 규소막 성장의 공정 조건이 저장 전극의 표면에 HSG-Si를 형성할 때 미치는 영향을 조사하였다. 그 결과 비정질 규소막의 인 농도가 $5.5{\pm}0.1E19atoms/cm^3$ 이상이면 HSG-Si가 제대로 형성되지 않는 인 농도 의존성을 나타내었다. 또한 HSG 두께가 $500{\AA}$ 이상에서는 전극과 전극을 단락시키는 비트 불량을 유발하기 때문에 비정질 규소막의 인농도는 $4.5E19atoms/cm^3$, HSG 임계 두께는 $450{\AA}$이 최적 조건임을 확인하였다.

• Transactions on Electrical and Electronic Materials
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• 제16권1호
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• pp.29-33
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• 2015

This paper presents the results of the optical characteristics of ITO thin film with different buffer layer thicknesses of $SiO_2$ and $Nb_2O_5$ for touch sensor application. $SiO_2$ and $Nb_2O_5$ buffer layers were deposited using RF magnetron sputtering equipment. The buffer layers were inserted between glass and ITO layers. In order to compare with the experimental results, the Essential Macleod Program (EMP) was adopted. Based on EMP simulation, the [$Nb_2O_5{\mid}SiO_2{\mid}ITO$] multi-layered thin film exhibited high transmittance of more than 85% in the visible region. The actual experimental results also showed transmittance of more than 85% in the visible region, indicating that the simulated results were well matched with the experimental results. The sheet resistance of ITO based film was about $340{\Omega}/sq$. The surface roughness maintained a relatively small value within the range of 0.1~0.4 nm when using the $Nb_2O_5$ and $SiO_2$ buffer layers.

• 한국표면공학회지
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• 제52권4호
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• pp.211-226
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• 2019

Optical thin films were deposited by using a reactive pulsed DC magnetron sputtering method with a high density plasma(HDP). In this study, the effect of sputtering process conditions on the microstructure and optical properties of $SiO_2$, $TiO_2$, $Nb_2O_5$ thin films was clarified. These thin films had flat and dense microstructure, stable stoichiometric composition at the optimal conditions of low working pressure, high pulsed DC power and RF power(HDP). Also, the refractive index of the $SiO_2$ thin films was almost constant, but the refractive indices of $TiO_2$ and $Nb_2O_5$ thin films were changed depending on the microstructure of these films. Antireflection films of $Air/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/Glass$ structure designed by Macleod program were manufactured by our developed sputtering system. Transmittance and reflectance of the manufactured multilayer films showed outstanding value with the level of 95% and 0.3%, respectively, and also had excellent durability.

• 한국주조공학회지
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• 제15권3호
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• pp.252-261
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• 1995

The purposes of this study were to investigate the microstructural changes in alloy ribbons of Al-Fe-Mo-Si quarternary system at $450{\sim}500^{\circ}C$, and to study the coarsening mechanism of fine precipitates. Using the hot stage in TEM, in situ microstructural changes in Al-4Fe-0.5Mo-1.5Si alloy ribbon and Al-8Fe-2Mo-1.5Si alloy ribbon have been examined successively up to 60 hours at $450^{\circ}C$ and $500^{\circ}C$. Cell structure in zone B of Al-4Fe-0.5Mo-1.5Si alloy ribbon was observed to collapse even in 10 minutes by in-situ heating at $450^{\circ}C$ and the size of precipitates in zone B increased twice in 60 hours. The precipitates in zone A of Al-4Fe-0.5Mo-1.5Si alloy ribbon showed slower coarsening rate than those in zone B by in-situ heating at $450^{\circ}C$. The precipitates in zone A of Al-8Fe-2Mo-1.5Si alloy ribbon increased 50% by in-situ heating at $500^{\circ}C$ in 50 hours compared to the initial precipitates while any microstructual change in zone B was not observed by in-situ heating at $500^{\circ}C$ up to 50 hours. Only the precipitates in zone A of Al-4Fe-0.5Mo-1.5Si alloy ribbon satisfied $r^3{\propto}t$ relationship of coarsening mechanism.

• 한국자기학회지
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• 제1권2호
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• pp.37-41
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• 1991

초급냉법중 단롤법으로 제작한 비정질 Fe/sub 68.5/Co/sub 5/M/sub 3/Cu/sub 1/Si/sub 13.5/ B/sub 9/(M=Nb, Mo, Mn, Cr)계 합금을 결정화온도 이상의 온도에서 열처리하여 결정화 시킨 후, 결정립 크 기에 따른 항자력, 투자율 및 교류자기이력손실을 조사 하였다. Fe/sub 68.5/Co/sub 5/M/sub 3/Cu/sub 1/ Si/sub 13.5/B/sub 9/(M=Nb, Mo, Mn, Cr)합금중 M=Mo, Nb조성에서 초미세결정립이 형성되며 약 10nm의 결정립 크기에서 가장 우수한 연자기적 특성을 나타낸다. 그러나 결정립의 크기가 10nm보다 작거나 16nm이 상 커지면 연자기 특성이 열화된다. 결정립크기가 10nm이하에서 연자기특성이 열화되는 것은 결정화 초기 결 정립계에 존재하는 것으로 판단되는 Fe rich 비정질상에 의한 것으로 고찰된다.

• 한국결정성장학회지
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• 제21권6호
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• pp.246-252
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• 2011

반도성 $MnSi_{1.73}$ 화합물은 고온 특성이 우수하고 뛰어난 내산화성을 가진 열전재료로서 알려져 있다. 본 연구에서는 순 Mn 및 Si 분말재료를 출발 원료로 기계적 합금화법(MA)을 적용하여 $MnSi_{1.73}$ 화합물 합성을 실시하였다. MA 처리는 P-5 유성형 볼밀장치를 이용하여 Ar 중에서 행하였다. MA 분말재료의 X선 회절, 열분석 및 전자현미경 분석을 통하여 고상반응을 관찰하였다. MA 공정 중 Si의 손실을 고려하여 화학양론 조성에서 Si 양을 증가시켜 $MnSi_{1.73}$ 화합물 합성을 시도하였다. 그 결과 $MnSi_{1.73}$ 화합물 단상은 $MnSi_{1.88}$ 조성의 혼합 분말을 200시간 볼밀 처리함으로써 얻을 수 있었다. 또한 200시간 볼밀 처리에 의하여 제조된 $MnSi_{1.73}$ 화합물의 평균결정립 크기는 40 nm 임을 X 선 회절피크의 Hall plot으로 부터 알 수 있었다.

• 한국재료학회지
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• 제8권7호
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• pp.584-590
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• 1998

$(Fe_{0.98}Mn_{0.02})_xSi_2(x{\leq$}1) 조성으로, 용융법으로 제조한 $\alpha$-$Fe_2Si_5$상의 잉곳을 730~85$0^{\circ}C$에서 4~20시간 열처리하거나, 기계적 합금화로 제조한 $\varepsilon$-FeSi과 Si상으로 구성된 분말을 760~85$0^{\circ}C$에서 10분간 가압통전소결하므로써 $\beta$-$FeSi_2$기지상에 Si이 분산된 미세조직을 얻을 수 있었다. 조성, 열처리 온도와 소결 온도에 따라 Si 분상의 크기와 간격이 각기 0.05~0.27$\mu\textrm{m}$와 0.2~0.6$\mu\textrm{m}$ 범위에서 변화하였다. 이와 같은 Si 분산상에 의해 $\beta$-$FeSi_2$의 격자 열전도도가 감소되어 성능지수가 향상될 수 있을 것으로 기대된다.

• 한국표면공학회지
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• 제50권5호
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• pp.386-391
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• 2017

Two kinds of steels whose compositions were Fe-34.4Cr-14.5Ni-2.5Mo-0.4W-0.4Mn-0.5Si-(0.009 or 0.35)S (wt.%) were centrifugally cast, and oxidized at $900^{\circ}C$ for 50-350 h in order to find the effect of sulfur on the high-temperature oxidation of Fe-34.4Cr-14.5Ni-2.5Mo-0.4W-0.4Mn-0.5Si-(0.009 or 0.35)S (wt.%) alloys. These alloys formed oxide scales that consisted primarily of $Cr_2O_3$ as the major oxide and $Cr_2MnO_4$ as the minor one through preferential oxidation of Cr and Mn. They additionally formed $SiO_2$ particles around the scale/alloy interface as well as inside the matrices. The high affinity of Mn with S led to the formation of scattered MnS inclusions particularly in the 0.35S-containing cast alloy. Sulfur was harmful to the oxidation resistance, because it deteriorated the scale/alloy adherence so as to accerelate the adherence and compactness of the formed scales.