• Korean Journal of Materials Research
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• v.9 no.6
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• pp.577-582
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• 1999

In order to make the electroconductive $Si_3N_4$-TiN composities, the Si-Ti(N) compacts were nitrided at $1450^{\circ}C$ for 20hours, and then they were post-sintered by a gas-pressure-sintering technique at 1TEX>$1950^{\circ}C$ for 3.5 hours. As starting powders, commercial si powder of about $10\mu\textrm{m}$, two types of Ti powders of 100 and 325 mesh, and fine-sized TiN of $2.5\mu\textrm{m}$ powders were used. In the $Si_3N_4$-TiN sintered bodies used Ti powders, the relative density and fracture strength and electrical conductivity are low due to the existence of large amounts of coarse pores. However, in the $Si_3N_4$-TiN composite used TiN powder, the fracture toughness, fracture strength and electrical resistivity were $5.0MPa{\cdot}m^{1/2}$, 624MPa and $1400{\omega}cm$, respectively. The dispersion of TiN particles in the composite inhibited the growth of $Si_3N_4$ in the shape of rod and made strong strain field contrasts at the $Si_3N_4$-TiNinterfaces. It was recognized that microstructural control is required to improve the electrical conductivity and mechanical properties of $Si_3N_4$-TiN composites by dispersing TiN particles homogeneously.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.864-873
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• 1995

Amorphous $Fe_{73.5}Cu_{1}Nb_{3}Si_{16.5}B_{6}$ ribbons were annealed for different time at $500^{\circ}C$ and $552^{\circ}C$, just before and after the exothermic reaction in DSC curve. The development of nanocrystalline phase was investigated by means of $M\"{o}ssbsuer$ spectroscopy. The crystalline phase consists mainly of $DO_{3}Fe-Si$. Though slight in amount (5%), another ferromagnetic phase which could be presumed $t-Fe_{3}B$ was detected Si content of $DO_{3}Fe-Si$, Si/(Fe+Si), was 0.218 under the heat treatment at $500^{\circ}C$ for 60 min and 0.222 at $552^{\circ}C$ for 10 min. Since then both of those values decreased with time until 120 min and finally these two values remained constant at 0.210. The variation in Si content with annealing time results in the variation in the hyperfine field and the isomer shift. The increase in the mean hyperfine fields and the decrease in the mean isomer shifts of Fe-Si are caused by the increase in Si content. The volume fractions of residual amorphous phase rapidly decrease during the early stage of annealing and come nearer to saturation after 120 min both at $500^{\circ}C$ and $552^{\circ}C$. The decrease in the mean hyperfine field of residual amorphous. in spite of slight changes in the volume fractions of Fe-Si and of residual amorphous after 120 min. is caused by the increase in the content of Nb and B in residual amorphous phase. The saturated volume fraction of the crystalline phase was 81% for $500^{\circ}C$ (180 min) and 77% for $552^{\circ}C$ (960 min), different from expectation.

• Journal of the Korean Magnetics Society
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• v.3 no.2
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• pp.130-134
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• 1993

The magnetic properties of the amorphous $Fe_{73.5-X}Co_{X}Cu_{1}Nb_{3}Si_{13.5}B_{9}(x=2,\;4)$ alloys, fabricated by a single roll rapid quenching technique and annealed at $400~650^{\circ}C$, have been investigated. The optimum annealing temperature is $550^{\circ}C$ for the amorphous $Fe_{71.5}Co_{2}Cu_{1}Nb_{3}Si_{13.5}B_{9}$ alloy. The properties of the nanocrystalline $Fe_{71.5}Co_{2}Cu_{1}Nb_{3}Si_{13.5}B_{9}$ alloy show the relative permeability of $1.1{\times}10^{4}$ and the coercive force of 0.22 Oe at 1 kHz. When annealed at $600^{\circ}C$, the nanocrystalline $Fe_{69.5}Co_{4}Cu_{1}Nb_{3}Si_{13.5)B_{9}$ alloy shows the relative permeability of $1.0{\times}10^{4}$ and the coercive force of 0.19 Oe at 1 kHz. From the X-ray measurement, it is found that the remarkably improved soft magnetic properties are the effect of the formation of $\alpha$-Fe(Si) grain. By the results of FMR exper-imeIlt, the optimum annealing condition is just below temperature which the peak-to-peak line width of FMR spectrum increase rapidly.

• Applied Chemistry for Engineering
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• v.4 no.2
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• pp.291-299
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• 1993

Hydrothermal synthesis of 1.13nm tobermorite was performed to obtain the mixing ratio of raw materials, the optimum reaction time and the effect of aluminum in two systems, $CaO-SiO_2-H_2O$ and cement sludge-$SiO_2-H_2O$. 1.13nm tobermorite($5CaO{\cdot}6SiO_2{\cdot}5H_2O:C_5S_6H_5$) was synthesized excellently from $CaO-SiO_2-H_2O$ system on each mole ratio (0.4, 0.8) of $CaO/SiO_2$ at $180^{\circ}C$. But a tobermorite crystals had a sign of crystal conversion after 6 hours of reaction times in the case of $CaO/SiO_2=0.4$ and 4 hours of reaction time in the case of $CaO/SiO_2=0.8$. However, a tobermorite synthesized from cement sludge wastes did not show the crystal conversion on each mole ratio(0.4, 0.8) of $CaO/SiO_2$ within 10 hours of reaction times. It is considered that aluminum ions dissolved from cement sludge wastes retarded the recrystallization of tobermorite. This role of aluminum ion was confirmed in $CaO-SiO_2-H_2O+Al$ powder system. According as added amount of Al powder was increased from 0.8% to 3.0%, the crystal had a highly flatter and larger shape. Recrvstallization was not detected within the same reaction times when aluminum was added.

• Bulletin of the Korean Chemical Society
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• v.29 no.2
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• pp.309-312
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• 2008

Two different anode composite materials comprising of Fe, Cu and Si prepared using high energy ball milling (HEBM) were explored for their capacity and cycling behaviors. Prepared powder composites in the ratio Cu:Fe:Si = 1:1:2.5 and 1:1:3.5 were characterized through X-Ray diffraction (XRD) and scanning electron microscope (SEM). Nevertheless, the XRD shows absence of any new alloy/compound formation upon ball milling, the elements present in Cu(1)Fe(1)Si(2.5)/Graphite composite along with insito generated Li2O demonstrate a superior anodic behavior and delivers a reversible capacity of 340 mAh/g with a high coulombic efficiency (98%). The higher silicon content Cu(1)Fe(1)Si(3.5) along with graphite could not sustain capacity with cycling possibly due to ineffective buffer action of the anode constituents.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.92-94
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• 2003

The sputtering yield change of an amorphous Si layer on Si(100) was measured quantitatively for 0.5 keV $O_2^{+}$ and $Ar^{+}$ ion bombardment with in suit MEIS. In the case of 0.5 keV $O_2^{+}$ ion bombardment, at the initial stage of sputtering before surface oxidation, the sputtering yield of Si was 1.4 (Si atoms/$O_2^{+}$) and then decreased down to 0.06 at the ion dose of $3\times10^{16}O_2\;^{+}\textrm{/cm}^2$. In the case of 0.5 keV $Ar^{+}$ ion bombardment, the sputtering yield of Si for the surface normal incidence was 0.56 at the ion dose of 2.5 ${\times}$ 10$^{15}$ $Ar^{+}\textrm{cm}^2$, and rapidly saturated to 1.2 at dose of $7.5\times10^{15}Ar^+\textrm{cm}^2$. For the incidence angle of 80 from surface normal, the sputtering yield of Si was saturated to about 1.4 at the initial stage of sputtering. The surface transient effects, caused by change in sputtering yield at the initial stage of sputtering can be negligible when 0.5 keV $Ar^{+}$ ion at extremely grazing angle was used for sputter depth profiling.g.

• Proceedings of the PSK Conference
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• 2003.10b
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• pp.223.2-223.2
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• 2003

A rapid, sensitive and selective liquid chromatography-tandem mass spectrometric (LC/MS/MS) method for the determination of eupatilin in human plasma was developed. Eupatilin and internal standard, (S)-[N-3-(4-(2-(1-methyl-5-tetrazolyl)-pyridine-5-y1)- 3-fluorophenyl)-2-oxo-5-oxazolidinyl]methyl acetamide (DA-7867) were extracted from human plasma by liquid-liquid extraction and analyzed on a phenyl-hexyl column with the mobile phase of acetonitrile-ammonium formate (10 mM, pH 3.0) (60:40, v/v). (omitted)

• Resources Recycling
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• v.28 no.2
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• pp.54-61
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• 2019

In order to recover pure alumina from black dross, leaching of mechanically activated black dross with NaOH solution resulted in an aluminate solution containing a small amount of Si(IV). Selective adsorption of Si(IV) onto hydrotalcite was investigated from 5 M NaOH solution where the concentration of Al(III) and Si(IV) was 13000 and 150 mg/L, respectively. Only Si(IV) was selectively loaded onto hydrotalcite, while Al(III) remained in the solution. Effect of the calcination treatment of hydrotalcite and concentration of calcined hydrotalcite and NaOH on the loading of Si(IV) was investigated. Although the loading percentage of Si(IV) was low from 5 M NaOH solution, most of the Si(IV) was removed by adjusting the concentration of NaOH by 48 times dilution with water when the concentration of calcined hydrotalcite was higher than 4.5 g/L. The loading of Si(IV) onto calcined hydrotalcite followed Freundlich adsorption isotherm.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.98-103
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• 2013

In this work, we investigated the enhanced performance of IZO-based TFTs with $HfSiO_x$ gate insulators. Four types of $HfSiO_x$ gate insulators using different diposition powers were deposited by co-sputtering $HfO_2$ and Si target. To simplify the processing sequences, all of the layers composing of TFTs were deposited by rf-magnetron sputtering method using patterned shadow-masks without any intentional heating of substrate and subsequent thermal annealing. The four different $HfSiO_x$ structural properties were investigated x-ray diffraction(XRD), atomic force microscopy(AFM) and also analyzed the electrical characteristics. There were some noticeable differences depending on the composition of the $HfO_2$ and Si combination. The TFT based on $HfSiO_x$ gate insulator with $HfO_2$(100W)-Si(100W) showed the best results with a field effect mobility of 2.0[$cm^2/V{\cdot}s$], a threshold voltage of -0.5[V], an on/off ratio of 5.89E+05 and RMS of 0.26[nm]. This show that the composition of the $HfO_2$ and Si is an important factor in an $HfSiO_x$ insulator. In addition, the effective bonding of $HfO_2$ and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.12
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• pp.31-36
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• 1999

The $Mg._5Zn._5SiN_2:Tb$ and $Mg._5Zn._5SiN_2:Eu$ materials were synthesized and studied to develop new phosphors for thin-film electroluminescent device application. Photoluminescence and cathodoluminescence characteristics of the synthesized phosphors were similar to general emission spectra of Eu, Tb ion, respectively. The CIE color coordinates, threshold voltage and luminance of the $Mg._8Zn._2SiN_2:Eu$ thin-film electroluminescent device fabricated by electron-beam deposition system were x=0.47, y=0.46, 47V, and 23.5 cd/$cm^2$ at 80V, respectively. The capacitance-voltage and charge-voltage characteristics of the thin film electroluminescent devices were also measured.