• Asian Pacific Journal of Cancer Prevention
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• 제14권2호
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• pp.685-689
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• 2013

Objective: To study the effects of down-regulation of HDAC6 expression on proliferation, cell cycling and migration of esophageal squamous cell carcinoma (ESCC) cells and related molecular mechanisms. Methods: ESCC cell line EC9706 cells were randomly divided into untreated (with no transfection), control siRNA (transfected with control siRNA) and HDAC6 siRNA (transfected with HDAC6 small interfering RNA) groups. Effects of HDAC6 siRNA interference on expression of HDAC6 mRNA and protein in EC9706 cells were investigated by semi-quantitative RT-PCR, Western blotting and immunocytochemistry methods. Effects of down-regulation of HDAC6 expression on cell proliferation, cell cycle, and cell migration were studied using a CCK-8 kit, flow cytometry and Boyden chambers, respectively. Changes of mRNA and protein expression levels of cell cycle related factor (p21) and cell migration related factor (E-cadherin) were investigated by semi-quantitative RT-PCR and Western blotting methods. Results: After transfection of HDAC6 siRNA, the expression of HDAC6 mRNA and protein in EC9706 cells was significantly downregulated. In the HDAC6 siRNA group, cell proliferation was markedly inhibited, the percentage of cells in G0/G1 phase evidently increased and the percentage of cells in S phase decreased, and the number of migrating cells significantly and obviously decreased. The mRNA and protein expression levels of p21 and E-cadherin in the HDAC6 siRNA group were significantly higher than those in the untreated group and the control siRNA group, respectively. Conclusions: HDAC6 siRNA can effectively downregulate the expression of HDAC6 mRNA and protein in EC9706 cells. Down-regulation of HDAC6 expression can obviously inhibit cell proliferation, arrest cell cycling in the G0/G1 phase and reduce cell migration. The latter two functions may be closely related with the elevation of mRNA and protein expression of p21 and E-cadherin.

• 전기화학회지
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• 제20권4호
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• pp.61-66
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• 2017

The cycle performance of Ti-Si alloy anode material for Li-ion batteries has been investigated as a function of loading level of electrode using a nodule type of substrate, in which the current collector of flat foil is also used for comparison. The Ti-Si alloy powders are prepared by mechanical alloying method. The electrodes with the nodule type of current collector exhibit enhanced cycling performance compared to those using the flat foil because the alloy particles are more strongly adhered to substrate and the stress caused by lithiation and delithiation reaction can be effectively relaxed by nodule-type morphology. It appears, however, that the cycle performance is critically dependent on the loading level of electrode, even when the nodule type of current collector is applied. With high loading level, cracks are initiated at surface of electrode due to a steep stress gradient through the electrode thickness during cycling, leading to capacity fading.

• 반도체디스플레이기술학회지
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• 제2권2호
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• pp.5-8
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• 2003

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and $SiO_2$ by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and NH$_3$ as precursors. The TaN films were deposited at $250^{\circ}C$ by both method. The growth rates of TaN films were 0.8${\AA}$/cycle for PAALD and 0.75${\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w -1.8:0.12 mm but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was 11g/cmand one for thermal ALD TaN was 8.3g/$cm^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200 nm)/TaN(10 nm)/$SiO_2$(85 nm)/ Si structure was shown at temperature above $700^{\circ}C$ by XRD, Cu etch pit analysis.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회B
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• pp.3079-3084
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• 2008

A fast response $CO_2$ analyzer has been developed for measuring the $CO_2$ concentration during transient condition of SI engine. The analyzer is based on the non-dispersive infrared absorption technique, electrical chopping system and water cooling system. The analyzer has good repeatability, linearity and permissible drift characteristic. Besides, it has 18ms with a response to measure the $CO_2$ concentration. The fast response $CO_2$ analyzer was applied to single cylinder SI engine and the $CO_2$ emission was examined during engine start. Simultaneously, the standard exhaust gas analyzer, which has slow response time, was used for considering the engine-out $CO_2$ characteristic. The developed analyzer showed much faster responsive characteristic than that of a standard analyzer and made cycle by cycle exhaust gas analysis possible. The transient engine operating characteristics will be estimated and the transient behaviors on engine-out emission and performance will be improved.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.14-19
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• 2002

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and SiO2 by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and $NH_3$ as precursors. The TaN films were deposited on $250^{\circ}$C by both method. The growth rates of TaN films were $0.8{\AA}$/cycle for PAALD and $0.75{\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w - $1.8 : 0.12 \mu\textrm{m}$ but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was $11g/\textrm{cm}^3$ and one for thermal ALD TaN was $8.3g/\textrm{cm}^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200nm)/TaN(l0nm)/$SiO_2(85nm)$/Si structure was shown at temperature above $700^{\circ}$C by XRD, Cu etch pit analysis.

• 한국전기전자재료학회논문지
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• 제32권3호
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• pp.179-186
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• 2019

This work investigated the effects of different conductive agents on the electrochemical properties of anodes. SiOx possesses high theoretical capacity and shows excellent cycle performance; however, the low initial coulombic efficiency and poor electrical conductivity limit its applications in real batteries. In this study, electrodes were fabricated using two different conductive agents, and the resulting physical and electrochemical properties were analyzed. SEM observations confirmed the formation of a CNT conductive network throughout the electrodes, while the electrical conductivity contributed to the electrode was confirmed by impedance measurements. Thus, the electrode fabricated with the CNT conductive agent showed greater capacity and superior cycle performance than did the electrode fabricated using the DB conductive agent.

• Korean Chemical Engineering Research
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• 제54권1호
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• pp.16-21
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• 2016

실리콘의 부피팽창과 낮은 전기전도도를 개선하기 위하여 Silicon/Carbon/CNT 복합체를 제조하였다. Silicon/Carbon/CNT 합성물은 SBA-15를 합성한 후, 마그네슘 열 환원 반응으로 Silicon/MgO를 제조하여 Phenolic resin과 CNT를 첨가하여 탄화하는 과정을 통해 합성하였다. 제조된 Silicon/Carbon/CNT 합성물은 XRD, SEM, BET, EDS를 통해 특성을 분석하였다. 본 연구에서는 충방전, 사이클, 순환전압전류, 임피던스 테스트를 통해 CNT 첨가량에 따른 전기화학적 효과를 조사하였다. $LiPF_6$ (EC:DMC:EMC=1 :1 :1 vol%) 전해액에서 Silicon/Carbon/CNT 음극활물질을 사용하여 제조한 코인셀은 CNT 함량이 7 wt% 일 때 1,718 mAh/g으로 높은 용량을 나타내었다. 코인셀의 사이클 성능은 CNT 첨가량이 증가할수록 개선되었다. 11 wt%의 CNT를 첨가한 Silicon/Carbon/CNT 음극은 두 번째 사이클 이후 83%의 높은 용량 보존율을 나타냄을 알 수 있었다.

• Nuclear Engineering and Technology
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• 제52권2호
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• pp.279-286
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• 2020

In this article, we develop a reactive distillation (RD) column configuration for the production of hydrogen. This RD column is in the HI decomposition section of the sulphur - iodine (SI) thermochemical cycle, in which HI decomposition and H₂ separation take place simultaneously. The section plays a major role in high hydrogen production efficiency (that depends on reaction conversion and separation efficiency) of the SI cycle. In the column simulation, the rigorous thermodynamic phase equilibrium and reaction kinetic model are used. The tuning parameters involved in phase equilibrium model are dependent on interactive components and system temperature. For kinetic model, parameter values are adopted from the Aspen flowsheet simulator. Interestingly, there is no side reaction (e.g., solvation reaction, electrolyte decomposition and polyiodide formation) considered aiming to make the proposed model simple that leads to a challenging prediction. The process parameters are determined on the basis of optimal hydrogen production as reflux ratio = 0.87, total number of stages = 19 and feeding point at 8th stage. With this, the column operates at a reasonably low pressure (i.e., 8 bar) and produces hydrogen in the distillate with a desired composition (H₂ = 9.18 mol%, H₂O = 88.27 mol% and HI = 2.54 mol%). Finally, the results are compared with other model simulations. It is observed that the proposed scheme leads to consume a reasonably low energy requirement of 327 MJ/kmol of H₂.

• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.193-197
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• 2014

Si-carbon composites as anode materials for lithium rechargeable batteries were prepared simply by mixing Si nanoparticles with carbon black and/or graphite through a solution process. Si nanoparticles were well dispersed and deposited on the surface of the carbon in a tetrahydrofuran solution. Si-carbon composites showed more than 700 mAh/g of initial capacity under less than 20% loading of Si nanoparticle in the composites. While the electrode with only Si nanoparticles showed fast capacity fading during continuous cycling, Si-carbon composite electrodes showed higher capacities. The cycle performances of Si nanoparticles in composites containing graphite were improved due to the role of the graphite as a matrix.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2017년도 전력전자학술대회
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• pp.577-595
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• 2017

${\bullet}$ Silicon Carbide (SiC) had excellent material properties as the base material for next generation of power semiconductor. In developing SiC MOSFET, gate oxide reliability issues had to be first overcome before commercial application. Besides, a high and stable gate-source voltage threshold $V_{GS(th)}$ is also an important parameter for operation robustness. SiC MOSFET with such characteristics can directly use existing high-speed IGBT gate driver IC's. ${\bullet}$ The linear voltage drop characteristics of SiC MOSFET will bring lower conduction loss averaged over full AC cycle compared to similarly rate IGBT. Lower switching loss enable higher switching frequency. Using package with auxiliary source terminal for gate driving will further reduce switching losses. Dynamic characteristics can fully controlled by simple gate resistors. ${\bullet}$ The low switching losses characteristics of SiC MOSFET can substantially reduce power losses in high switching frequency operation. Significant power loss reduction is also possible even at low switching frequency and low switching speed. in T-type 3-level topology, SiC MOSFET solution enable three times higher switching freqeuncy at same efficiency.