• Proceedings of the KSMRM Conference
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• 2002.11a
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• pp.81-81
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• 2002

목적： 수소 핵 자기 공명 분광기법은 자기공명 영상으로는 얻을 수 없는 화학적 성분에 대한 정보를 제공하여 암을 포함한 여러 질환의 진단과 예측에 사용된다. 이 기법으로는 어떤 특정한 작은 체적을 선택하여 그 부위에만 자기공명 분광신호를 획득하는 단일 체적기법과 체적 전체를 위상변화를 주면서 여기 시킨 후, 데이터 후처리 과정에서 체적별로 분리해내는 다중체적기법이 있다. 다중체적기법은 더 긴 영상 획득시간에도 불구하고 단일 체적기법에 비하여 분광상을 대조군과 비교할 수 있는 잇점이 있다. 뇌를 진단하는데 사용하기 위한 수소분광선을 얻기 위하여 다중체적 화학적 영상기법을 개발하여 모형과 자원자에 대하여 적용하여 그 유용성 확인하였다.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.4
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• pp.180-186
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• 2023

Positive bias temperature instability (PBTI) degradation of n⁺ and p⁺ poly-Si gate high-voltage(HV) SiO2 dielectric nMOSFETs was investigated. Unlike the expectation that degradation of n⁺/nMOSFET will be greater than p⁺/nMOSFET owing to the oxide electric field caused by the gate material difference, the magnitude of the PBTI degradation was greater for the p⁺/nMOSFET than for the n⁺/nMOSFET. To analyze the cause, the interface state and oxide charge were extracted for each case, respectively. Also, the carrier injection and trapping mechanism were analyzed using the carrier separation method. As a result, it has been verified that hole injection and trapping by the p⁺ poly-Si gate accelerates the degradation of p⁺/nMOSFET. The carrier injection and trapping processes of the n⁺ and p⁺ poly-Si gate high-voltage nMOSFETs in PBTI are detailed in this paper.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2008.04a
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• pp.156-159
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• 2008

This paper introduces a remained tensile force estimation method using SI technique based on evolutionary algorithm for externally prestressed tendon. This paper applies the differential evolutionary scheme to SI technique. A virtual model test using ABAQUS 3 dimensional frame model has been made for this work The virtual model is added to the tensile force(28.5kN). Two set of frequencies are extracted respectively from the virtual test and the self-coding FEM 2 dimension model. The estimating tendon tension for the FEM model is 28.31kN. It is that the error in the tendon tension is 1% through the differential evolutionary algorithm. The errors between virtual model and the self-coding FEM model are assumed as the model error.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.69-76
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• 1993

The statistical methodology using RSM (response surface method) was used too ptimize the deposition conditions of selective CVD tungsten process for improving the deposition rate and the adhesion property. Temperature, flow rate of SiH$_4$ and WF$_6$ and H$_2$ and Ar carrier gases were chosen for the deposition variables and process characteristics due to carrier gas were intensively investigated. It was observed that temperature was the main factor influencingthe deposition rate in the case of H$_2$ carrier gas while the reactant ratio, $SiH_{4}/WF_{6}$, had the principal effect on the deposition rate in the case of Ar carrier gas. The increased deposition rate and the good adhesion to Si were obtained under Ar carrier gas compared to H$_2$ carrier gas. The optimum conditions for deposition rate and antipeeling property were found to be the temperature range of 300~32$0^{\circ}C$ and the reactant ratio, $SiH_{4}/WF_{6}$, of 0.5~0.6.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.597-600
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• 1999

A solar cell conversion efficiency was degraded by grain boundary effect in polycrystalline silicon To reduce grain boundary effect, we performed a preferential grain boundary etching, POC$_3$ n-type emitter doping, and then ITO film growth on poly- Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth higher than 10 ${\mu}{\textrm}{m}$. RF magnetron sputter grown ITO films showed a low resistivity of 10$^{-4}$ $\Omega$ -cm and high transmittance of 85 %. With well fabricated poly-Si solar cells, we were able to achieve as high as 15 % conversion efficiency at the input power of 20 mW/$\textrm{cm}^2$.

• New & Renewable Energy
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• v.18 no.1
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• pp.29-34
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• 2022

The most prevalent cause of solar cell efficiency loss is reduced recombination at the metal electrode and silicon junction. To boost efficiency, a a SiO_X/poly-Si passivating interface is being developed. Poly-Si for passivating contact is formed by various deposition methods (sputtering, PECVD, LPCVD, HWCVD) where the ploy-Si characterization depends on the deposition method. The sputtering process forms a dense Si film at a low deposition rate of 2.6 nm/min and develops a low passivation characteristic of 690 mV. The PECVD process offers a deposition rate of 28 nm/min with satisfactory passivation characteristics. The LPCVD process is the slowest with a deposition rate of 1.4 nm/min, and can prevent blistering if deposited at high temperatures. The HWCVD process has the fastest deposition rate at 150 nm/min with excellent passivation characteristics. However, the uniformity of the deposited film decreases as the area increases. Also, the best passivation characteristics are obtained at high doping. Thus, it is necessary to optimize the doping process depending on the deposition method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.142-143
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• 2007

현재 양산용 태앙전지 제조에 가장 널리 쓰이는 전극형성 기술인 Screen printing 기법은 진공 증착법과 무전해 도금에 의한 방법과, 비교할 때 공정장비가 간단하고 자동화에 적합하여 70 년대 이후로 널리 사용되어 왔다. 본 실험에서는 Screen printing기법과 Porous Si을 이용한 양산형 실리콘 태양전지를 제작하여 그 특성을 평가하였으며 13.2%의 변환효율을 나타내었다.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.37-44
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• 2006

The homoepitaxy of Si(5 5 12) at $495^{\circ}C$ has been studied by Scanning Tunneling Microscopy under ultrahigh vacuum. A Si-dimer is the basic building-block and preferentially adsorbs on a unique site, that is, the Si-dimer/adatom site at the (337) and the (225) subsections within the Si(5 5 12) unit cell. The Si(5 5 12) unit cell is faceted to $3\times(337)$ subsections filled with Si-addimers and $1\times(113)$ subsection. In this step the tetramer at the other (337) section within the unit cell is transformed to a dimer/adatom site which can accept Si-dimers. Each (337) section is faceted to $1\times(112)\;and\;1\times(113)$, and then finally the unit cell of Si(5 5 12) is faceted to $3\tiems(112)\;and\;4\times(113)$ and forms the facet of effective height, $2.34{\AA}$. In this step, mutual transformation between the honeycomb chain and the dimer/adatom occurs. Finally, the valley between (112) and (113) facets is filled. If once the last step is completed, the uniform and planar Si(5 5 12) terrace is recovered. From the present study, therefore, it can be concluded that the homoepitaxy on Si(5 5 12) is periodically achieved and such growth mode is quite unique since faceting of the substrate-unit-cell plays a critical role for controlling uniformity of the overlayer.

• Journal of Korea Water Resources Association
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• v.55 no.12
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• pp.991-998
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• 2022

The purpose of this study is to develop GPU (Graphics Processing Unit) acceleration technique for 2-dimensional model and to assess the effectiveness for high resolution flood simulation in wide area In this study, GPU acceleration technique was implemented in the G2D (Grid based 2-Dimensional land surface flood model) model, using implicit scheme and uniform square grid, by using CUDA. The technique was applied to flood simulation in Jinju-si. The spatial resolution of the simulation domain is 10 m × 10 m, and the number of cells to calculate is 5,090,611. Flood period by typhoon Mitag, December 2019, was simulated. Rainfall radar data was applied to source term and measured discharge of Namgang-Dam (Ilryu-moon) and measured stream flow of Jinju-si (Oksan-gyo) were applied to boundary conditions. From this study, 2-dimensional flood model could be implemented to reproduce the measured water level in Nam-gang (Riv.). The results of GPU acceleration technique showed more faster flood simulation than the serial and parallel simulation using CPU (Central Processing Unit). This study can contribute to the study of developing GPU acceleration technique for 2-dimensional flood model using implicit scheme and simulating land surface flood in wide area.

• 한국전자현미경학회:학술대회논문집
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• 2005.11a
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• pp.103-105
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• 2005