• Journal of Environmental Science International
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• v.27 no.3
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• pp.167-177
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• 2018

The removal characteristics of As and Se ions from aqueous solution by hexadecyl trimethyl ammonium bromide (HTMAB) modified anthracite (HTMAB-AT) were investigated under various conditions of contact time, pH and temperature. When the pH is 6, the zeta potential value of anthracite (AT) is -24 mV and on the other hand, the zeta potential value of the HTMAB-AT is +44 mV. It can be seen that the overall increase of about 60 mV. Increasing the (+) potential value indicates that the surface of the adsorbent had a stronger positive charge, so adsorption for the anion metal was increased. The isotherm data was well described by Langmuir and Temkin isotherm model. The maximum adsorption capacity was found to be 7.81 and 6.89 mg/g for As and Se ions from the Langmuir isotherm model at 298 K, respectively. The kinetic data was tested using pseudo first and pseudo second order models. The results indicated that adsorption fitted well with the pseudo second order kinetic model. The mechanism of the adsorption process showed that adsorption was dependent on intra particle diffusion model according to two step diffusion. The thermodynamic parameters(${\Delta}G^{\circ}$, ${\Delta}H^{\circ}$, and ${\Delta}S^{\circ}$) were also determined using the equilibrium constant value obtained at different temperatures. The thermodynamic parameters indicated that the adsorption process was physisorption, and also an endothermic and spontaneous process.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.550-555
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• 2011

A high-quality CIGS film with a selenization process needs to be developed for low-cost and large-scale production. In this study, we used $Cu_2In_3$, CuGa and $Cu_2Se$ sputter targets for the deposition of a precursor. The precursor deposited by sputtering was selenized in Se vapor. The precursor layer deposited by the co-sputtering of $Cu_2In_3$, CuGa and $Cu_2Se$ showed a uniform distribution of Cu, In, Ga, and Se throughout the layer with Cu, In, CuIn, CuGa and $Cu_2Se$ phases. After selenization at $550^{\circ}C$ for 30 min, the CIGS film showed a double-layer microstructure with a large-grained top layer and a small-grained bottom layer. In the AES depth profile, In was found to have accumulated near the surface while Cu had accumulated in the middle of the CIGS film. By adding a Cu-In-Ga interlayer between the co-sputtered precursor layer and the Mo film and adding a thin $Cu_2Se$ layer onto the co-sputtered precursor layer, large CIGS grains throughout the film were produced. However, the Cu accumulated in the middle of CIGS film in this case as well. By supplying In, Ga and Se to the CIGS film, a uniform distribution of Cu, In, Ga and Se was achieved in the middle of the CIGS film.

• Journal of Integrative Natural Science
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• v.3 no.2
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• pp.112-116
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• 2010

Prepared CdSe nanoparticles were systems, one of the most studied and useful nanostructures. Semiconductor quantum dots (QDs) have been the subject of much interest for both fundamental reseach and technical applications in recent years, due mainly to their strong size dependent properties and excellent chemical processibility. CdSe nanocrystals were synthesized by using sol-gel process. Synthesized CdSe quantum dots were studied to evaluate the optical, electronic and structural properties using UV-absorption, and photoluminescence (PL) measurement. Prepared CdSe nanoparticles were subjected to sense hydrofluoric acid. Photoluminescence was quenched upon adding of hydrofluoric acid.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.77-78
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• 2007

In this paper, we suppose that the 1-dimensional photonic crystal using holography lithography. We used Ag doped amorphous AsGeSeS which belongs in the chalcogenide materials have sensitive photoluminescence property. The purpose of this experiment is the process to complete 3-D photonic crystal after making 2-D photonic crystal. The lattice formation was made an observation by irradiating He-Ne laser with the AsGeSeS film leaned obliquely. Then, by measuring formed diffraction beam, the diffraction lattice was calculated.

• Journal of Animal Science and Technology
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• v.47 no.2
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• pp.305-316
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• 2005

This study was conducted to determine the total amount and type of seleniwn (Se) in the Se-enriched mushroom and its spent mushroom composts (SMC), and to investigate the metabolism in relation to Se accwnulation in the mushroom. Mushrooms, Flammulina velutipes, used in this study were grown for 60 days by adding 2 rng of inorganic Se (Na2Se03) per kg of mushroom composts (MC) on as-fed basis and were compared with normal mushrooms grown on the non Se-supplemented Me. Total Se contents for Se-treated mushrooms were significantly increased (P < 0.0001) by 20-fold (4.51 $\mu$/ g of dry) compared to Se-untreated (0.23 $\mu$/ g of dry). On the contrary, organic Se ratio was significantly lower (P < 0.0001) in the Se-treated mushroom (72.3 %) than the Se-untreated one (100 %, not analytically detected of inorganic Se). Se distribution upon a length in the Se-treated mushrooms was the highest in the bottom part (6.86 $\mu$/ g of dry) near to MC, and top and middle parts were significantly lower (3.71 and 3.01 $\mu$/ g of dry, respectively; P < 0.001) than the bottom. In the SMC from Se-treated mushrooms, the significant amount of Se (5.04l1g/g of dry) was remained, but that from the Se-untreated mushrooms was significantly low (P$\mu$ / g of dry. Se-treated SMC showed a high ratio of organic Se (65.67 %), suggesting that the significant amount of inorganic Se in the SMC was converted to organic Se by mushroom mycelia. Prior to mycelia inoculation in the mushroom culture, the sterilization of MC brought approximately 18% of Se loss in the MC. Apparent and net accumulation rates (%) for Se into mushrooms were 14.81 and 10.14 %, respectively, resulting from the Se volatilization into the air via metabolic process of mushroom itself. The result of this study shows that inorganic Se addition to MC for mushroom improved the organic Se contents in the mushroom and SMC. This study showed the possibility that Se in Se-enriched mushroom and SMC could be utilized as Se sources of food for human as well as feed for livestock.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.426.2-426.2
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• 2016

Numerous of researches are being conducted to improve the efficiency of $Cu_2ZnSnSe_4$ (CZTSe)-based photovoltaic devices, which is one of the most promising candidates for low cost and environment-friendly solar cells. In this work, we concentrate on the back contact of the devices. A proper thickness of $MoSe_2$ in back contact structure is believed to enhance adhesion and ohmic contact between Mo back contact and absorber layer. Nevertheless, too thick $MoSe_2$ layers that are grown during high-temperature selenization process can impede the current collection, thus resulting in low cell performance. By applying molybdenum nitride as a barrier in back contact structure, we were able to control the thickness of $MoSe_2$ layer, which resulted in lower series resistance and higher fill factor of CZTSe devices. The phase transformation of Mo-N binary system was systematically studied by changing $N_2$ concentration during the sputtering process. With a proper phase of Mo-N fabricated by using an adequate partial pressure of $N_2$, the efficiency of CZTSe solar cells as high as 8.31% was achieved while the average efficiency was improved by about 2% with respect to that of the referent cells where no barrier layer was employed.

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.1985-1988
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• 2014

$Cu_2ZnSnSe_4$ (CZTSe) thin films were synthesized on transparent conducting oxide glass substrates via a simple, non-toxic, and low-cost process using a precursor solution paste. A three-step heating process (oxidation, sulfurization, and selenization) was employed to synthesize a CZTSe thin film as an absorber layer for use in thin-film solar cells. In particular, we focused on the effects of sulfurization conditions on CZTSe film formation. We found that sulfurization at $400^{\circ}C$ involves the formation of secondary phases such as $CuSe_2$ and $Cu_2SnSe_3$, but they gradually disappeared when the temperature was increased. The formed CZTSe thin films showed homogenous and good crystallinity with grain sizes of approximately 600 nm. A solar cell device was tentatively fabricated and showed a power conversion efficiency of 2.2% on an active area of 0.44 $cm^2$ with an open circuit voltage of 365 mV, a short current density of 20.6 $mA/cm^2$, and a fill factor of 28.7%.

• Journal of Powder Materials
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• v.18 no.5
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• pp.437-442
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• 2011

The present study focused on the synthesis of Bi-Te-Se-based powder by an oxide-reduction process, and analysis of the thermoelectric properties of the synthesized powder. The phase structure, chemical composition, and morphology of the synthesized powder were analyzed by XRD, EPMA and SEM. The synthesized powder was sintered by spark plasma sintering. The thermoelectric properties of the sintered body were evaluated by measuring its Seebeck coefficient, electrical resistivity, and thermal conductivity. $Bi_2Te_{2.7}Se_{0.3}$ powder was synthesized from a mixture of $Bi_2O_3$, $TeO_2$, and $SeO_2$ powders by mechanical milling, calcination, and reduction. The sintered body of the synthesized powder exhibited n-type thermoelectric characteristics. The thermoelectric properties of the sintered bodies depend on the reduction temperature. The Seebeck coefficient and electrical resistivity of the sintered body were increased with increasing reduction temperature. The sintered body of the $Bi_2Te_{2.7}Se_{0.3}$ powder synthesized at $360^{\circ}C$ showed about 0.5 of the figure of merit (ZT) at room temperature.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.434-438
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• 2010

The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a $CuInSe_2$ and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the $Ga_2Se_3$ layer. The $Ga_2Se_3$ layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous $Ga_2Se_3$ layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of $Ga_2Se_3$ layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the $Ga_2Se_3$ thickness was 220 nm, suggesting that the $Ga_2Se_3$ layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.

• Journal of the Korean Society of Systems Engineering
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• v.8 no.1
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• pp.9-19
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• 2012

The Light Rail Transit Project is a large scaled project which takes several years in building a system. After construction, LRT system is operating for several tens of years. For these characteristics, the right application of systems engineering to LRT project greatly effects the project success. In this paper, we present systems engineering application model to LRT project i.e. SELRT which include systems engineering technical process, core technology management process, project support process. SELRT also has a module for the exchange of outputs in SE tool and PM tool. Systems engineering processes in SELRT mainly base on ISO/IEC 15288. In future, we expand the range of SE processes and improve the usability in SELRT. We expect that this model will contribute to improve the efficiency in LRT project and to success the LRT project.