• Journal of Korean Medicine Rehabilitation
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• v.34 no.2
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• pp.85-100
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• 2024

Objectives This study aims to analyze clinical studies on subacromial-subdeltoid (SA-SD) bursitis and propose future directions for clinical research on SA-SD bursitis. Methods We searched eight databases to investigate research trends in Korean medicine treatments for SA-SD bursitis up to November 2023. A total of thirty-one studies were included in this analysis. Results Among the included studies, there were six case reports from Korea, fifteen case reports, and ten randomized controlled trials from abroad. Various interventions were uesd, including acupuncture, pharmacopuncture, manual therapy, electro-acupuncture, cupping, physiotherapy, acupotomy, warm-acupuncture, herbal medicine, and moxibustion. The evaluation tools used in these studies included the total effective rate, visual analogue scale, range of motion, and numeral rating scale. Conclusions This study provides an overview of the research trends in Korean medicine treatments for SA-SD bursitis. However, given the low quality and small sample sizes of the studies, the evidence supporting effect of Korean medicine treatments for SA-SD bursitis was insufficient. Further clinical trials and systematic reviews are required.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.1-5
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• 2009

A new pixel circuit for Active Matrix Organic Light Emitting Diodes (AMOLEDs), based on the polycrystalline silicon thin film transistors (Poly-Si TFTs), was proposed and verified by SMART SPICE simulation. One driving and six switching TFTs and one storage capacitor were used to improve display image uniformity without any additional control signal line. The proposed pixel circuit compensates an inevitable threshold voltage variation of Poly-Si TFTs and also compensates the degradation of OLED at low power supply voltage($V_{DD}$). The simulation results show that the proposed pixel circuit successfully compensates the variation of OLED driving current within 0.8% compared with 20% of the conventional pixel circuit.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.12
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• pp.1-9
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• 2003

In this paper, a novel Ni silicide technology with Cobalt interlayer and Titanium Nitride(TiN) capping layer for sub 100 nm CMOS technologies is presented, and the device parameters are characterized. The thermal stability of hi silicide is improved a lot by applying co-interlayer at Ni/Si interface. TiN capping layer is also applied to prevent the abnormal oxidation of NiSi and to provide a smooth silicidc interface. The proposed NiSi structure showed almost same electrical properties such as little variation of sheet resistance, leakage current and drive current even after the post silicidation furnace annealing at $700^{\circ}C$ for 30 min. Therefore, it is confirmed that high thermal robust Ni silicide for the nano CMOS device is achieved by newly proposed Co/Ni/TiN structure.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.4
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• pp.80-85
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• 2007

The passivation is one of the important technologies for protection of the devies from damage. In this paper, we fabricated $0.1{\mu}m\;{\Gamma}$--gate InAIAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) on a GaAs substrate. And then the wafer with MHEMTs was divided into two pieces; one for passivation and another for without passivation experiments. The passivations were done by using both low-k BCB and Si3N4 thin films. DC and RF performances were measured and the results are compared. The MHEMTs with BCB passivation show lower degradation than ones with Si3N4 passivation.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.2
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• pp.1-6
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• 2007

This study investigated the magnetic properties of $Ni_{80}Fe_{20}/SiO_2$ laminates with shape-induced magnetic anisotropy. The multilayer films were deposited on Si or upilex substrates, from separate $Ni_{80}Fe_{20}$ and $SiO_2$ (at %) alloy targets using a rf diode sputtering system. $Ni_{80}Fe_{20}/SiO_2$ laminates with a various number of bilayers (N) were prepared. The laminates with ellipse array patterns were prepared using photolithographic technique. The magnetic properties were measured at room temperature using a B-H hysteresisgraph and a high frequency permeameter. The several steps during domain wall reversal were observed in multilayer films, attributing to inter-magnetic layer coupling. Intrinsic uniaxial anisotropy field increases with N. The experimental values of the total anisotropy field are found to be in good agreement with the calculated values. This study utilized the shape anisotropy of the laminated film objects with small ellipse array patterns to induce a larger uniaxial anisotropy so as to maximize their operating frequency.

• Investigative Magnetic Resonance Imaging
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• v.1 no.1
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• pp.130-134
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• 1997

Purpose: To analyze contrast-enhancement pattern of stomach cancer on dynamic MRI and to verify the efficacy of intravenous contrast agent in the evaluation of stomach cancer. Materials and Methods: Twelve patients with proven stomach cancer underwent dynamic MRI. By using l.OT scanner, we obtained precontrast FLASH images, and 30, 60, 90 second delay FLASH images after intravenous contrast injection. All patients ingested one liter of water and had intramuscular injection of Buscopan just before MR study. For quantitative analysis we measured signal to noise ratio (SiN) of stomach cancer on each image, and signal difference to noise ratio (SD/N) between cancer and intraluminal fluid, cancer and the pancreas. For qualitative analysis two radiologists evaluated lesion conspicuity on each image by grading system(grade 0, 1, 2, 3: poor, fair, good, excellent). Results: SiN of stomach cancer increased gradually by time(precontrast, 30, 60, 90 second delay: 38.7, 42.5, 57.4, 65.7). SD/N between cancer and intraluminal fluid significantly increased after contrast enhancement(l.24, 25.01, 39.30, 45.89). SD/Ns between cancer and the pancreas were 10.5, 9.33, 9.99, 10.66, respectively. In qualitative analysis, precontrast images were better than postcontrast images for delineation of stomach cancer. Postcontrast images showed clear endo-Iuminal side of stomach cancer, but outer margin of stomach cancer was more distinct on precontrast images. Conclusion: Precontrast MR images are better than postcontrast MR images in the depiction of stomach cancer. Intravenous contrast agent is not imperative in the evaluation of stomach cancer.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.1
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• pp.1-8
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• 2005

We fabricate PLT(5) thin film on Pt/TiO/sub x/SiO₂/Si substrate by using sol-gel method and investigate leakage current, switching and retention properties. The leakage current density of PLT(5) thin film is 3.56×10/sup -7/A/㎠ at 4V. In the examination of switching properties, pulse voltage and load resistance were 2V～5V and 50Ω～3.3kΩ, respectively. Switching time has a tendency to decrease from 0.52㎲ to 0.14㎲ with the increase of pulse voltage, and also the time increases from 0.14㎲ to 13.7㎲ with the increase of load resistance. The activation energy obtained from the relation of applied pulse voltage and switching time is about 135kV/cm. The error of switched charge density between hysteresis loop and experiment of polarization switching is about 10%. Also, polarization in retention decreases as much as about 8% after l0/sup 5/s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.1
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• pp.25-32
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• 2005

In this paper, it is attempted to provide a unified explanation for typical short channel GaAs MESFET’s and SOI-structured Si JFET's behaviors such as: i) drain voltage-induced threshold voltage roll-off, ii) finite output ac resistance beyond the saturation, and iii) weak dependence of the drain saturation current on the channel length. Replacing the conventional GCA with a new assumption that is suggested in order to include the longitudinal field variation, and taking into account the channel current continuity and the field-dependent mobility, we can derive the two-dimensional potential in both depletion region and undepleted conducting channel. Obtained expressions for the threshold voltage and the drain current will be considerably accurate over the entire operating region. Moreover, in comparison with the conventional channel length shortening models, our model seems to be more reasonable in explaining the Early effect.

• Tuberculosis and Respiratory Diseases
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• v.70 no.6
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• pp.462-473
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• 2011

Background: Smoking is a risk factor for idiopathic pulmonary fibrosis (IPF), but the mechanism of the association remains obscure. There is evidence demonstrating that plasminogen activator inhibitor-1 (PAI-1) is involved in the progression of pulmonary fibrosis. This study was to determine whether the administration of small interfering RNA (siRNA) targeting PAI-1 or PAI-1 inhibitor to the cigarette smoking extract (CSE)-exposed rat alveolar type II epithelial cells (ATII cells) limits the epithelial-mesenchymal transition (EMT). Methods: ATII cells were isolated from lung of SD-rat using percoll gradient method and cultured with 5% CSE. The EMT was determined from the ATII cells by measuring the real-time RT PCR and western blotting after the PAI-1 siRNA transfection to the cells and after administration of tiplaxtinin, an inhibitor of PAI-1. The effect of PAI-1 inhibitor was also evaluated in the bleomycin-induced rats. Results: PAI-1 was overexpressed in the smoking exposed ATII cells and was directly associated with EMT. The EMT from the ATII cells was suppressed by PAI-1 siRNA transfection or administration of tiplaxtinin. Signaling pathways for EMT by smoking extract were through the phosphorylation of SMAD2 and ERK1/2, and finally Snail expression. Tiplaxtinin also suppressed the pulmonary fibrosis and PAI-1 expression in the bleomycin-induced rats. Conclusion: Our data shows that CSE induces rat ATII cells to undergo EMT by PAI-1 via SMAD2-ERK1/2-Snail activation. This suppression of EMT by PAI-1 siRNA transfection or PAI-1 inhibitor in primary type II alveolar epithelial cells might be involved in the attenuation of bleomycin-induced pulmonary fibrosis in rats.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.307-307
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• 2014

정보화 시대로 접어들면서 동일한 공간에 더 많은 정보를 저장할 수 있고, 보다 빠른 동작이 가능한 비휘발성 메모리 소자에 대한 요구가 증가하고 있다. 하지만, 최근 비휘발성 메모리 소자 관련 연구보고에 따르면, 메모리 소자의 소형화 및 직접화 측면에서, 전하 저장을 기반으로 하는 기존의 Floating-Gate(FG) Flash 메모리는 20 nm 이하 공정에서 한계가 예측 되고 있다. 따라서, 이러한 FG Flash 메모리의 한계를 해결하기 위해, 기존에 FET 기반의 FG Flash 구조와 같은 3 terminal이 아닌, Diode와 같은 2 terminal로 동작이 가능한 ReRAM, PRAM, STT-MRAM, PoRAM 등 저항변화를 기반으로 하는 다양한 종류의 차세대 메모리 소자가 연구되고 있다. 그 중, 저항 변화 메모리(ReRAM)는 CMOS 공정 호환성, 3D 직접도, 낮은 소비전력과 빠른 동작 속도 등의 우수한 동작 특성을 가져 차세대 비휘발성 메모리로 주목을 받고 있다. 또한, 상하부 전극의 2 terminal 만으로 소자 구동이 가능하기 때문에 Passive Crossbar-Array(CBA)로 적용하여 플래시 메모리를 대체할 수 있는 유력한 차세대 메모리 소자이다. 하지만, 이를 현실화하기 위해서는 Passive CBA 구조에서 발생할 수 있는 Read Disturb 현상, 즉 Word-Line과 Bit-Line을 통해 선택된 소자를 제외하고 주변의 다른 소자를 통해 흐르는 Sneak Leakage Current(SLC)를 차단하여 소자의 메모리 State를 정확히 sensing하기 위한 연구가 선행 되어야 한다. 따라서, 현재 이러한 이슈를 해결하기 위해서, 많은 연구 그룹에서 Diodes, Threshold Switches와 같은 ReRAM에 Selector 소자를 추가하는 방법, 또는 Self-Rectifying 특성 및 CRS 특성을 보이는 ReRAM 구조를 제안 하여 SLC를 차단하고자 하는 연구가 시도 되고 있지만, 아직까지 기초연구 단계로서 아이디어에 대한 가능성 정도만 보고되고 있는 현실 이다. 이에 본 논문은 Passive CBA구조에서 발생하는 SLC를 해결하기 위한 새로운 아이디어로써, 본 연구 그룹에서 선행 연구로 확보된 안정적인 저항변화 물질인 SiN를 정류 특성을 가지는 n-Si/Ti 기반의 Schottky Diode와 결합함으로써 기존의 CBA 메모리의 Read 동작에서 발생하는 SLC를 차단 할 수 있는 1SD-1R 구조의 메모리 구조를 제작 하였으며, 본 연구 결과 기존에 문제가 되었던 SLC를 차단 할 수 있었다.