• Title/Summary/Keyword: SBHS

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Examination on Fatigue Limit and Crack Growth Characteristic of SBHS700 Base Metal

  • Ono, Yuki;Kinoshita, Koji
    • International journal of steel structures
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    • v.18 no.4
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    • pp.1098-1106
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    • 2018
  • The object of this study is to clarify fatigue limit and fatigue crack growth characteristic of SBHS700 base metal which is 780 MPa class steel. This study carried out the fatigue tests of SBHS700 base metal containing different defect size, and the fatigue limit was compared with that of the conventional steel. Test results indicate that the fatigue limit increased with decrease initial defect size, and can be precisely evaluated by using ${\sqrt{area}}$ parameter model. This paper also presents that crack growth characteristic was almost the same as that of the conventional steel from the observation of striations by using Scanning electron microscope and length of beach marks.

Fabrication and Characterization of Cr-Si Schottky Nanodiodes Utilizing AAO Templates

  • Gwon, Nam-Yong;Seong, Si-Hyeon;Jeong, Il-Seop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.600-600
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    • 2013
  • We have fabricated Cr nanodot Schottky diodes utilizing AAO templates formed on n-Si substrates. Three different sizes of Cr nanodots (about 75.0, 57.6, and 35.8 nm) were obtained by controlling the height of the AAO template. Cr nanodot Schottky diodes showed a rectifying behavior with low SBHs of 0.17~0.20 eV and high ideality factors of 5.6~9.2 compared to those for the bulk diode. Also, Cr nanodot Schottky diodes with smaller diameters yield higher current densities than those with larger diameters. These electrical behaviors can be explained by both Schottky barrier height (SBH) lowering effects and enhanced tunneling current due to the nanoscale size of the Schottky contact. Also, we have fabricated Cr-Si nanorod Schottky diodes with three different lengths (130, 220, and 330 nm) by dry etching of n-Si substrate. Cr-Si nanorod Schottky diodes with longer nanorods yield higher reverse current than those with shorter nanorods due to the enhanced electric field, which is attributed to a high aspect ratio of Si nanorod.

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Formation Mechanism of a Large Schottky Barrier Height for Cr-AlGaN/GaN Heterostructure (Cr/n-AlGaN/GaN Schottky Contact에서 높은 쇼트키 장벽 형성 메카니즘에 관한 연구)

  • Nam, Hyo-Duk;Lee, Yeung-Min;Jang, Ja-Soon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.4
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    • pp.266-270
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    • 2011
  • We report on the formation mechanism of large Schottky barrier height (SBH) of nonalloyed Cr Schottky contacts on strained Al0.25Ga0.75N/GaN. Based on the current-voltage (I-V) and capacitance-voltage (C-V) data, the SBHs are determined to be 1.98 (${\pm}0.02$) and 2.07 (${\pm}0.02$) eV from the thermionic field emission and two-dimensional electron gas (2DEG) calculations, respectively. Possible formation mechanism of large SBH will be described in terms of the formation of Cr-O chemical bonding at the interface between Cr and AlGaN/GaN, low binding-energy shift to surface Fermi level, and the reduction of 2DEG electrons.

Radiation Damage of SiC Detector Irradiated by High Dose Gamma Rays

  • Kim, Yong-Kyun;Kang, Sang-Mook;Park, Se-Hwan;Ha, Jang-Ho;Hwang, Jong-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.12a
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    • pp.87-90
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    • 2006
  • Two SiC radiation detector samples were irradiated by Co-60 gamma rays. The irradiation was performed with dose rates of 5 kGy/hour and 15 kGy/hour for 8 hours, respectively. Metal/semiconductor contacts on the surface were fabricated by using a thermal evaporator in a high vacuum condition. The SiC detectors have metal contacts of Au(2000 ${\AA}$)/Ni(300 ${\AA}$) at Si-face and of Au(2000 ${\AA}$)/Ti(300 ${\AA}$) at C-face. I-V characteristics of the SiC semiconductor were measured by using the Keithley 4200-SCS parameter analyzer with voltage sources included. From the I-V curve, we analyzed the Schottky barrier heights(SBHs) on the basis of the thermionic emission theory. As a result, the 6H-SiC semiconductor showed- similar Schottky barrier heights independent to the dose rates of the irradiation with Co-60 gamma rays.

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Probabilistic Strength at Serviceability Limit State for Normal and SBHS Slender Stiffened Plates Under Uniaxial Compression

  • Rahman, Mahmudur;Okui, Yoshiaki;Anwer, Muhammad Atif
    • International journal of steel structures
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    • v.18 no.4
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    • pp.1397-1409
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    • 2018
  • Stiffened plates with high slenderness parameters show large out-of-plane deflections, due to elastic buckling, which may occur before the plates reach their ultimate strength. From a serviceability point of view, restriction of out-of-plane deflections exceeding the fabrication tolerance is of primary importance. Compressive strength at the serviceability limit state (SLS) for slender stiffened plates under uniaxial stress was investigated through nonlinear elasto-plastic finite element analysis, considering both geometric and material nonlinearity. Both normal and high-performance steel were considered in the study. The SLS was defined based on a deflection limit and an elastic buckling strength. Probabilistic distributions of the SLS strengths were obtained through Monte Carlo simulations, in association with the response surface method. On the basis of the obtained statistical distributions, partial safety factors were proposed for SLS. Comparisons with the ultimate strength of different design codes e.g. Japanese Code, AASHTO, and Canadian Code indicate that AASHTO and Canadian Code provide significantly conservative design, while Japanese Code matches well with a 5% non-exceedance probability for compressive strength at SLS.