• Bulletin of the Korean Chemical Society
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• 제27권1호
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• pp.99-105
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• 2006

Polyamine dendrimers functionalized with electrochemiluminescent (ECL) polypyridyl Ru(II) complexes, dend-$[CO-(CH_2)_3-mbpy{\cdot}Ru(L)_2]_3(PF_6)_6$ (dend: N$(CH_2CH_2NH)_3$-, L: bpy, o-phen, phen-Cl, DTDP), were synthesized through the complexation of dendritic polypyridyl ligands to Ru(II) complexes. Their electrochemical redox potentials, photoluminescence (PL), and relative ECL intensities were studied. The ECL emissions produced by the reaction between the electro-oxidized $Ru^{3+}$ species of polyamine dendrimers and tripropylamine as a coreactant were measured in a static system with potential cycles between 0.8 and 1.3 V or through flow injection analysis with a potential of +1.3 V, and were compared to that of $[Ru(o-phen)_3](PF_6)_2{\cdot}Dend-[CO-(CH_2)_3-mbpy{\cdot}Ru(bpy)_2]_3(PF_6)_6$ showed an ECL intensity that was two-fold greater than that of the reference complex $[Ru(o-phen)_3](PF_6)_2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.364-368
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• 1997

We have investigated Pt and RuO$_2$as a bottom electrode for a device application of PZT thin film. The bottom electrodes were prepared by using an RF magnetron sputtering method. We studied some of the property influencing factors such as substrate temperature, gas flow rate, and RF power. An oxygen partial pressure from 0 to 50% was investigated. The results show that only Ru metal was grown without supp1ying any O$_2$gas. Both Ru and RuO$_2$phases were formed for O$_2$partial pressure between 10∼40%. A Pure RuO$_2$ phase was obtained with O$_2$partial pressure of 50%. A substrate temperature from room temperature to 400$^{\circ}C$ was investigated with XRD for the film crystallinity examination. The substrate temperature influenced the surface morphology and the resistivity of Pt and RuO$_2$as well as the film crystal structure. From the various considerations, we recommend the substrate temperature of 300$^{\circ}C$ for the bottom electrode growth. Because PZT film growth on top of bottom electrode requires a temperature process higher than 500$^{\circ}C$, bottom electrode properties were investigated as a function of post anneal temperature. As post anneal temperature was increased, the resistivity of Pt and RuO$_2$was decreased. However, almost no change was observed in resistivity for an anneal temperature higher than 700$^{\circ}C$. From the studies on resistivity and surface morphology, we recommend a post anneal temperature less than 600$^{\circ}C$.

• Journal of Korean Vacuum Science & Technology
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• 제5권2호
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• pp.47-51
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• 2001

To obtain high remnant polarization and good crystalinity of ferroelectric thin films in non-volatile memory devices, the high temperature treatment in oxygen ambient is inevitable. Severe problems that occur in this process are oxygen diffusion into substrate, oxidation of electrode and buffer layer, degradation of microstructure and so on. We made ruthenium dioxide thin film by reactive sputtering with oxygen and argon mixture atmosphere. Comparing quantitatively the core-level spectra of Ru and RuO$_2$ obtained by x-ray photoelectron spectroscopy(XPS), we found that chemical state of RuO$_2$ is very stable and of good resistance to oxygen diffusion and oxidation of adjacent layers. It opens the use of RuO$_2$ thin film as a multifunctional layer of good conducting electrode and resistive barrier for the diffusion and the oxidation. We also suggest a correct understanding of Ru 3d core-level spectrum for RuO$_2$ based on the scheme of final state screening and charge transfer satellites.

• 한국환경과학회:학술대회논문집
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• 한국환경과학회 2008년도 추계학술발표회 발표논문집
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• pp.464-467
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• 2008

성능이 우수한 다성분계 전극을 개발하기 위하여 Pt, Ru, Sn, Sb 및 Gd의 5 종류 금속을 이용하여 1성분계 전극의 성능과 산화제 생성량 및 2성분계 전극의 성능과 산화제 생성 경향을 고찰하여 다음의 결과를 얻었다. 1. RhB 농도 감소는 Ru/Ti > Sb/Ti > Pt/Ti > Sn/Ti > Gd/Ti 전극의 순서로 나타났으나 단위 전력당 2분간 제거된 RhB 농도 감소는 Ru/Ti > Sb/Ti > Pt/Ti > Gd/Ti > Sn/Ti 전극의 순서로 나타났다. 생성된 산화제 농도는 ClO$_2$ > free Cl > H$_2$O$_2$ > O$_3$의 순서였으며 Gd/Ti 전극의 경우 산화제가 거의 생성되지 않는 것으로 나타났다. 모든 전극에서 OH 라디칼이 거의 생성되지 않는 것으로 나타났다. Ru/Ti와 Sb/Ti 전극의 높은 RhB 분해와 산화제 생성 농도는 정확하지는 않지만 상관관계가 있는 것으로 나타났다. 2. Ru계 2성분 전극(Ru-Gd/Ti, Ru-Pt/Ti, Ru-Sn/Ti 및 Ru-Sb/Ti)은 모두 1성분계 전극보다 RhB 분해성능이 높아지는 것으로 나타났으며, Ru계 2성분 전극 중 가장 성능이 우수하였던 전극은 Ru:Sn=9:1 전극으로 나타났다. Sn-Sb/Ti 전극은 Sn:Sb=1:9의 전극 성능이 우수한 것으로 나타났으나 Sb/Ti 전극과의 차이는 크지 않은 것으로 나타났다. Pt계 전극(Pt-Gd/Ti, Pt-Sn/Ti, Pt-Sb/Ti)은 대체로 두 성분 혼합에 따른 RhB 분해효과 상승은 없는 것으로 나타났다. 2성분계 전극 중 RhB 제거 성능이 가장 우수하였던 Ru:Sn=9:1 전극에서 4종류의 산화제 생성 농도가 높은 것으로 나타났다. Ru:Pt=9:1 전극은 RhB 분해 성능이 5 전극 중 가장 낮았으며, 산화제도 생성량이 가장 적은 것으로 나타났다. Ru-Sn/Ti 계 전극의 RhB 분해 성능과 산화제 생성 농도가 실험한 모든 1, 2성분계 전극에서 높은 것으로 나타나 향후 3, 4성분계 전극 제조시 이를 바탕으로 제조하고 다른 물질들은 보조재료로서 사용할 필요성이 있는 것으로 사료되었다.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2004년도 춘계총회 및 연구발표회 초록집
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• pp.36.2-36.2
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• 2004

• 한국환경과학회지
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• 제17권5호
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• pp.547-553
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• 2008

For the RhB removal from the wastewater, electrochemical method was adapted to this study. Three dimensionally stable anode (Pt, Ir and Ru) and graphite and Ru cathode were used. In order to identify decolorization, the effects of electrode, current density, electrolyte and air flow rate were investigated. The effects of electrode material, current, electrolyte concentration and air flow rate were investigated on the decolorization of RhB. Electro-Fenton's reaction was evaluated by added $Fe^{2+}$ and $H_2O_2$ generated by the graphite cathode. Performance for RhB decolorization of the four electrode systems lay in: Ru-graphite > Ru-Ru > Ir-graphite > Pt-graphite. A complete color removal was obtained for RhB (30 mg/L) at the end of 30 min of electrolysis under optimum operations of 2 g/L NaCl concentration and 2 A current. $Fe^{2+}$ addition increased initial reaction and decreased final RhB concentration. However the effect was not high.

• Bulletin of the Korean Chemical Society
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• 제16권2호
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• pp.82-84
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• 1995

• 마이크로전자및패키징학회지
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• 제2권1호
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• pp.19-28
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• 1995

RuO2 함량을 각각 달리한 pyrochlore 구조의 Pb2Ru2O6.5분말을 제조하여 이 분말과 유기 vehicle 유기용매를 혼합하여 저항 페이스트를 제조한후 인쇄, 소결과정을 거쳐 전반적 인 물성을 분석하였고 두 종류의 페이스트에 TCR보정용 첨가제로서 ZrO2를 첨가한 경우 처가량에 따라 저항값은 크게 변화하였으나 TCR 은 약간의 변화를 보였으며 Nb2O5의 경우 저항값이 크게 증가하였으며 TCR은 2wt%까지 첨가시 매우 안정적인 값을 나타내었다. 고 정항의 경우 CuO의 첨가시 저항값이 크게 감소 하였으며 TCR은 첨가량에 따라 증가하였 으나 3wt%이상 첨가시 저항체 표면이 심하게 거칠어지는 결과를 보였다.

• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.808-812
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• 2006

In this dissertation, Ru-Zr metal gate electrode deposited on two kinds of dielectric were formed for MOS capacitor. Sample co-sputtering method was used as a alloy deposition method. Various atomic composition was achieved when metal film was deposited by controlling sputtering power. To study the characteristics of metal gate electrode, C-V(capacitance-voltage) and I-V(current-voltage) measurements were performed. Work function and equivalent oxide thickness were extracted from C-V curves by using NCSU(North Carolina State University) quantum model. After the annealing at various temperature, thermal/chemical stability was verified by measuring the variation of effective oxide thickness and work function. This dissertation verified that Ru-Zr gate electrodes deposited on $SiO_{2}\;and\;ZrO_{2}$ have compatible work functions for NMOS at the specified atomic composition and this metal alloys are thermally stable. Ru-Zr metal gate electrode deposited on $SiO_{2}\;and\;ZrO_{2}$ exhibit low sheet resistance and this values were varied with temperature. Metal alloy deposited on two kinds of dielectric proposed in this dissertation will be used in company with high-k dielectric replacing polysilicon and will lead improvement of CMOS properties.

• Progress in Superconductivity
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• 제13권3호
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• pp.178-183
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• 2012

Two $RuSr_2(EuCe)Cu_2O_z$ samples (as prepared and after $N_2$ treatment) have been investigated by thermogravimetric (TC) analysis, high-resolution x-ray powder diffraction and magnetization measurements. TG measurements which were carried out in $H_2/Ar$ atmosphere showed that the $N_2$ treatment of the as-prepared sample at $650^{\circ}C$ for 2h leads to a decrease in the oxygen content z by about 0.25. This oxygen depletion was accompanied by an increase in the magnetic transition temperature from 54.0 K to 114.9 K. This magnetic behavior is discussed in connection with the results of Rietveld analysis of the x-ray diffraction data which showed that the $N_2$ treatment resulted in both a significant increase in the rotation angle of the $RuO_6$ octahedra and a decrease in c-lattice parameter of the sample.