• Proceedings of the Korean Magnestics Society Conference
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• 1998.05a
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• pp.74-75
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• 1998

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.1
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• pp.28-37
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• 2018

In order to study the NTC thermistor that can be fired at low temperature, the influence of the lead free glass frit and $RuO_2$ addition on the electrical properties of the NTC thermistor of $Mn_{1.85}Ni_{0.25}Co_{0.9}O_4$ basic composition was studied. The sintering characteristics of the specimen sintered at $1000^{\circ}C$ with 10 wt% frit added to the basic NTC composition were similar to those of the specimen sintered at $1200^{\circ}C$ without frit. However, as the amount of frit increased, the electrical resistivity and B constant were increased. In order to reduce the resistance, NTC thermistor was prepared by adding 0, 2, and 5 wt% of $RuO_2$ to the composition containing 10 wt% of frit and sintered at $1000{\sim}1200^{\circ}C$, and sintering and electrical properties were measured. The electrical resistivity and the B constant tended to decrease with increasing $RuO_2$ content. However, the resistivity was the lowest at sintering temperature of $1000^{\circ}C$ and the resistance increased with increasing sintering temperature after 5 wt% $RuO_2$ addition. The NTC thermistor sintered at $1000^{\circ}C$ with 10 wt% frit and 5 wt% $RuO_2$ in the composition of NTC showed similar electrical properties and sintering characteristics when sintered at $1200^{\circ}C$ without added frit.

• 한국연소학회:학술대회논문집
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• 2014.11a
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• pp.355-356
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• 2014

Catalytic steam reforming of tar produced from biomass gasification was conducted using several Ni-based catalysts. K and Mn were used as a promoter over $Ni/Ru/Al_2O_3$ catalyst. The pellet and monolith type catalysts were prepared and applied to lab and bench-scale biomass gasification system. The $Ni/Ru-K/Al_2O_3$ catalyst shown higher performance than $Ni/Ru-Mn/Al_2O_3$ catalyst at low temperature range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.311-312
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• 2008

$RuO_2$ 계열의 후막재료를 사용한 저항의 신뢰성시험을 실시하고 주요 고장 메커니즘을 확인하였다. 사용된 소자의 기판은 AlN 세라믹 기판이며, 후막재료로 $RuO_2$ paste를 프린팅하고 소결시킨 구조의 고주파용 저항(RF Termination)이다. 주요 고장 메커니즘은 후막(Thick Film)의 특성변화, 기판의 특성변화, 전극-후막 간의 접촉특성변화, Trimming 부위의 열화, 열팽창계수 차이에 의한 기계적 파손 등으로 알려져 있으며, 본 실험에서는 고장모드 분석을 위해 과부하시험, 고온동작시험 등을 포함한 신뢰성 환경시험과 수명시험을 실시하였다. 각 시험 결과 수명시험 후 전극-후막 간의 접합부 파괴가 관찰되었고, 열충격 시험 결과 후막의 crack이 관찰되었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.65-69
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• 2010

In this study, we compared two methods(an acid treatment in strong acid reflux and a heat treatment in air atmosphere) for hydrophilic surface treatment of multi-walled carbon nanotubes(MWNT) to enhance the capcity of $RuO_2$/MWNT composite electrode materials for ultracapacitor. Both treatments generated a number of defects on the surface of MWNT by the breakage of $\pi$ bond in graphene layer at which carboxyl groups were introduced. However, the degree of hydrophilicity generated by strong acid treatment was higher than that by heat treatment in air, which was revealed by the quantitative measurement of surface carboxyl groups by using Boehm titration. The increased hydrophilicity save rise to an improved dispersity of $RuO_2$ nanoparticles on MWNT. Finally, the improved dispersity resulted in the capacity enhancement of composite electrode materials for ultracapacitor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.302-302
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• 2007

The $SrRuO_3$/Si thin film electrodes are grown with (00l) preferred orientations on SrO buffered-Si (001) substrates by pulsed laser deposition. The optimum conditions of SrO buffer layers for $SrRuO_3$ preferred orientations are the deposition temperature of $700^{\circ}C$, deposition pressure of $1\;{\times}\;10^{-6}\;Torr$, and the thickness of 6 nm. The 100nm thick-$SrRuO_3$ bottom electrodes deposited above $650^{\circ}C$ on SrO buffered-Si (001) substrates have a rms roughness of approximately $5.0\;{\AA}$ and a resistivity of 1700 -cm, exhibiting a (00l) relationship. The 100nm thick-$Pb(Zr_{0.2}Ti_{0.8})O_3$ thin films deposited at $575^{\circ}C$ have a (00l) preferred orientation and exhibit $2P_r$ of $40\;C/cm^2$, $E_c$ of 100 kV/cm, and leakage current of about $1\;{\times}\;10^{-7}\;A/cm^2$ at 1V.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.599-604
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• 1998

We have investigated Pt and $RuO_2$ as a bottom electrode for ferroelectric capacitor applications. The bottom electrodes were prepared by using an RF magnetron sputtering method. Some of the investigated parameters were a substrate temperature, gas flow rate, RF power for the film growth, and post annealing effect. The substrate temperature strongly influenced the surface morphology and resistivity of the bottom electrodes as well as the film crystallographic structure. XRD results on Pt films showed a mixed phase of (111) and (200) peak for the substrate temperature ranged from RT to $200^{\circ}C$, and a preferred (111) orientation for $300^{\circ}C$. From the XRD and AFM results, we recommend the substrate temperature of $300^{\circ}C$ and RF power 80W for the Pt bottom electrode growth. With the variation of an oxygen partial pressure from 0 to 50%, we learned that only Ru metal was grown with 0~5% of $O_2$ gas, mixed phase of Ru and $RuO_2$ for $O_ 2$ partial pressure between 10~40%, and a pure $RuO_2$ phase with $O_2$ partial pressure of 50%. This result indicates that a double layer of $RuO_2/Ru$ can be grown in a process with the modulation of gas flow rate. Double layer structure is expected to reduce the fatigue problem while keeping a low electrical resistivity. As post anneal temperature was increased from RT to $700^{\circ}C$, the resistivity of Pt and $RuO_2$ was decreased linearly. This paper presents the optimized process conditions of the bottom electrodes for memory device applications.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2009.10a
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• pp.141-144
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• 2009

In this study, used simplest sandwich cells containing $Ru2^+$ liquid electrolytes in order to clarify the role of nanoporous $TiO_2$ electrodes. And, the cell structure is as follow: $F:SnO_2$ glass/ nanoporous $TiO_2$/ tris(2,2'-bipyridy)ruthenium(ll) colplex [$Ru(bpy)_3(PF_6)_2$] in acetonitrile/ $F:SnO_2$ glass. The result, we found that ECL intensities increased rapidly by use of cathodes with nanoporous $TiO_2$ layers. And, porous $TiO_2$ electrodes were confirmed to be efficient for ECL devices as well as solar cell devices. It is thought that the increases in the ECL intensities may be associated with both formation of $Ru^+$ in porous $TiO_2$ electrodes and the process taking place after reduction of $Ru^+$ which occurs in the nanoporous electrodes.

• Bulletin of the Korean Chemical Society
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• v.19 no.10
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• pp.1084-1090
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• 1998

The oxidation of triphenylphosphine by [(tpy)(phen)RuⅣ(O)]2+ and [(bpy)(p-tert-butylpy)RuⅣ(0)]2+ (tpy is 2,2': 6',2"-terpyridine, phen is 1,10-phenanthroline, bpy is 2,2'-bipyridine, and p-tert-butylpy is para-tertbutylpyridine) in CH3CN has been studied. Experiments using 18O-labeled complex show the oxyl group transfer from [RuⅣ=O]2+ to triphenylphosphine occured quantitatively within experimental error. Kinetic data were fit to a second-order for [RuⅣ=O]2+ and [PPh3]. The initial product, [RuⅡ-OPPh3]2+, was formed as an observable intermediate and then underwent slow solvolysis. The reaction proceeded as endothermic in activation enthalpy and a decrease in activation entropy. The oxidative reactivity of four representative ruthenium mono-oxo oxidants against triphenylphosphine was compared. These systems have been utilized as electrochemical oxidative catalysts.

• Transactions of the Korean hydrogen and new energy society
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• v.4 no.2
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• pp.5-15
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• 1993

Hydrogen production in visible light with the following semiconductor systems, $CdS-WO_3$, $CdS-TiO_2$, have been investigated in the presence of redox catalyst (Pt, $RuO_2$). MeOH, EtOH, isopropanol, sulfide/sulfite mixture, lactic acid were used as sacrifical reagents. The optimal condition for $H_2$ evolution was found to be in qgueous lactic acid media for $CdS-WO_3/RuO_2$. The photochemical efficiency for this system was 1.05 % and the $H_2$ evolution rate was 26.5ml/min. at $6.07{\times}10^{-5}$ einstein/sec photon rate