• 한국전기전자재료학회논문지
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• 제11권5호
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• pp.358-364
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• 1998

Retrograde well is a new process for ULSI fabrication. High energy ion implantation has been used for retrograde well formation. In this paper the forming condition for retrograde well using high energy ion implantation is compared with that for conventional well. TW signals for retrograde p-,n-well($900^{\circ}C$),after annealing are similar trends to those of conventional ones($1150^{\circ}C$), however the signals for RTA have the highest value because of small thermal budget. Junction depths of retrograde well are varied from about 1.2 to $3.0\{mu}m$ as for conventional well. The peak concentrations of retrograde well, however, are about 10 times higher in values than those of conventional ones so that they can be used as any types of potential barriers or gettering sites. The critical dose for phosphorus implantation in our experiments is between $3\times10^{13} and 1\times10^{14}/cm^2$. Under the above critical dose, there are many secondary defects near projected range such as dislocation lines and dislocation loops.

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.106-113
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• 2000

This study describes how a properly calibrated simulation method could be used to investigate the latchup immunity characteristics among the various high energy ion implanted CMOS twin well (retro-grade/BILLI/BL) structures. To obtain the accurate quantitative simulation analysis of retrograde well, a global tuning procedure and a set of grid specifications for simulation accuracy and computational efficiency are carried out. The latchup characteristics of BILLI and BL structures are well predicted by applying a calibrated simulation method for retrograde well. By exploring the potential contour, current flow lines, and electron/hole current densities at the holding condition, we have observed that the holding voltage of BL structure is more sensitive to the well design rule (p+to well edge space /n +to well edge space) than to the retrograde well itself.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.17-20
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• 2000

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. Triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\_$p/ (Projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1270-1273
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• 1997

We have investigated the latchup characteristics of BL/BILLI retrograde twin well CMOS that has the high energy ion implanted buried layer to intend for more improvement of latchup compare to conventional retrograde well and BILLI structures. We explored the dependence of various latchup characteristics such as n+ trigger latchup and p+ trigger latchup on the buried layer implant doses. We show various DC latchup characteristics that allow us to evaluate each technology and suggest guidelines for the reduction of latchup susceptibility.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 추계학술발표강연 및 논문개요집
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• pp.130-130
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• 1999

• 전자공학회논문지D
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• 제36D2호
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• pp.48-54
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• 1999

차세대 CMOS용 구조에서 래치업 특성을 최소화하는 고에너지 이온주입을 이용한 retrograde well과 게더링(매몰층)의 최적 공정 설계 변수 값들을 구했다. 본 논문에서는 두 가지의 모의 모델 구조를 제안하고, Silvaco사의 Athena와 Atlas 툴에 의한 모의실험 결과를 비교 분석하였다. 첫 번째 모델은 게더링층과 retrograde well,을 조합한 구조이며 트리거전류가 600 ${\mu}A/{\mu}m$ 이상의 결과를 얻었고, 두 번째 모델은 twin retrograde well을 이용하여 유지전류가 2500${\mu}A/{\mu}m$ 이상의 결과를 얻었다. 모의실험결과 두 모델 모두 도즈량이 많을수록 패치업 면역 특성이 좋아짐을 보았다. 모의실험 조건에서 두 모델 모두 n'-p' 간격은 2${\mu}m$로 고정하였다.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.17-20
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• 2000

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the R$\sub$p/ (projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.347-350
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• 1998

차세대 CMOS 구조에서 래치업 최소화를 위하여 고에너지 이온주입을 이용한 retrograde well 과 매몰층의 최적 공정 설계 변수 값들을 설정하였다. 본 논문에서는 두 가지의 모듸 모델 구조를 제안하고 silvaco 틀에 의한 시뮬레이션 결과를 비교 분석하엿다. 첫 번째 모델은 매몰층과 retrograde well을 조합한 구조이며, p+ injection trigger current가 600.mu.A/.mu.m 이상의 결과를 얻었고, 두번째 모델은 twin retrograde well을 이용하여 p+ injection 유지전류가 2500.mu.A/.mu.m이상의 결과를 얻었다. 시뮬레이션 결과, 두 모델 모두 도즈량이 많을수록 래치업 면역 특성이 좋아짐을 보았다. 시뮬레이션 조건에서 두 모델 모두 n+/p+ 간격은 2..mu.m 로 고정하였다.

• 대한치과마취과학회지
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• 제11권2호
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• pp.153-158
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• 2011

Midazolam is known to produce sedation as well as amnesia. Many articles reported about anterograde amnesia, but it is rare that articles about retrograde amnesia. The 61-year-old female patient (64 kg, 154 cm, ASA physical status I) was administered 3.02 mg (0.047 mg/kg) of midazolam during 2 hours. The patient's Modified Observer's Assesment of Alertness/Sedation Scale was 4. The patient who had been consciously sedated with midazolam, exhibited profound amnesia, both anterograde and retrograde after implantation. The patient's memory restoration was begun after 6 hours.

• Restorative Dentistry and Endodontics
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• 제21권1호
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• pp.311-320
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• 1996

If root and resection is done during surgical endodontic treatment, newly exposed dentinal tubules form pathways between the canal and the peripheral tissue. Nd : YAG laser was used to block this phenomenon, and its effect was studied with dye penetration and SEM techniques. 40 intact single rooted teeth were divided into 4 groups(10 each) : control group and test groups, in which retrograde cavity surface, cutting surface, retrograde cavity surface & cutting surface were treated with laser(1 watt 15pps) and finally retrograde filling with IRM was conducted. After that, they were stained with 2 % methylene blue, sectioned and evaluated by the maximum infiltration depth. And to observe surface change, they were prepared for SEM. The results were as follows ; 1. All experimental groups showed microleakage with variation in amount. 2. The 2nd group which treated both the retrograde cavity and cutting surface showed significantly less microleakage than the other groups(p<0.05). There was no significant difference between groups treated on one side only. 3. As a result of SEM observation of dentin surface, obstruction of dentinal tubules with marble shaped granules, which were different from normal dentin could be seen. Cracks could be seen also. 4. In summary of this experiment, it is thought that effort to obstruct the exposed dentinal tubules as well as retrograde cavity after root end resection is needed.