• 전기전자학회논문지
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• 제28권1호
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• pp.110-115
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• 2024

본 논문은 3D NAND Flash memory에서 tapering된 O/N/O(Oxide/Nitride/Oxide) 구조와 blocking oxide를 ferroelectric material로 대체한 O/N/F(Oxide/Nitride/Ferroelectric) 구조의 V_th(Threshold Voltage) 변화량을 분석했다. Tapering 각도가 0°일 때 O/N/F 구조는 O/N/O 구조보다 저항이 작고 WL(Word-Line) 상부와 WL 하부의 V_th 변화량이 감소한다. Tapering된 3D NAND Flash memory는 WL 상부에서 WL 하부로 내려갈수록 channel 면적이 감소하며 channel 저항이 증가한다. 따라서 tapering 각도가 증가할수록 WL 상부의 V_th가 감소하고 WL 하부의 V_th는 증가한다. Tapering된 O/N/F 구조는 channel 반지름 길이와 비례하는 V_fe로 인해 WL 상부의 V_th는 O/N/O 구조보다 더 감소한다. 또한 O/N/F 구조의 WL 하부는 O/N/O 구조보다 V_th가 증가하기 때문에 tapering 각도에 따른 V_th 변화량이 O/N/O 구조보다 더 증가한다.

• Smart Structures and Systems
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• 제3권2호
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• pp.189-200
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• 2007

As a functional material, shape memory alloy (SMA) has attracted much attention and research effort to explore its unique properties and its applications in the past few decades. Some of its properties, in particular the electrical resistance (ER) based self-sensing property of SMA, have not been fully studied. Electrical resistance of an SMA wire varies during its phase transformation. This variation is an inherent property of the SMA wire, although it is highly nonlinear with hysteresis. The relationship between the displacement and the electrical resistance of an SMA wire is deterministic and repeatable to some degree, therefore enabling the self-sensing ability of the SMA. The potential of this self-sensing ability has not received sufficient exploration so far, and even the previous studies in literature lack generality. This paper concerns the utilization of the self-sensing property of a spring-biased Nickel-Titanium (Nitinol) SMA actuator for two applications: ER feedback position control of an SMA actuator without a position sensor, and estimation of the opening of a SMA actuated valve. The use of the self-sensing property eliminates the need for a position sensor, therefore reducing the cost and size of an SMA actuator assembly. Two experimental apparatuses are fabricated to facilitate the two proposed applications, respectively. Based on open-loop testing results, the curve fitting technique is used to represent the nonlinear relationships between the displacement and the electrical resistance of the two SMA wire actuators. Using the mathematical models of the two SMA actuators, respectively, a proportional plus derivative controller is designed for control of the SMA wire actuator using only electrical resistance feedback. Consequently, the opening of the SMA actuated valve can be estimated without using an extra sensor.

• 한국진공학회지
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• 제17권4호
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• pp.253-261
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• 2008

Programmable metalization cell (PMC) memory 소자로도 명명되는 고체 전해질 메모리 소자는 비휘발성, 고속 및 높은 ON/OFF 저항비 등을 갖고 있기 때문에, 차세대 비휘발성 메모리로서 각광받고 있는 소자 중의 하나이다. 본 논문에서는 고체 전해질 메모리 소자의 동작 원리를 먼저 소개하고자 한다. 또한, 메모리향 소자 개발을 진행 중인 미국 코지키 교수 그룹, 비메모리향 소자 개발을 진행 중인 일본 NEC 그룹 등의 해외 연구진과, Te 계열의 칼코게나이드 합금을 채택하여 소자를 제작한 한국전자통신연구원 및 충남대학교 등의 국내 연구진의 연구 성과를 소개하고자 한다.

• 전자공학회논문지
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• 제51권8호
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• pp.172-177
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• 2014

두 가지 $N_2$ 프로세스(성장 중 반응성 질소 그리고 질소 플라즈마 경화)에 의해 특별히 개선된 AsGeTeS 위에 만들어진 문턱 스위칭 소자를 제시하고자 한다. 적층과 열적 안정적인 소자 구조가 가능한 두 스텝 프로세스에서의 질소의 사용은 나노급 배열 회로의 응용에서의 스위치와 메모리 소자의 집적을 가능하게 한다. 이것의 좋은 문턱 스위칭 특성에도 불구하고 AsTeGeSi 기반의 스위치는 높은 온도에서의 신뢰성 있는 저항 메모리 적용에 중요한 요소를 가진다. 이것은 보통 Te의 농도 변화에 기인한다. 그러나 chalconitride 스위치(AsTeGeSiN)은 $30{\times}30(nm^2)$ 셀에서 $1.1{\times}10^7A/cm^2$가 넘는 높은 전류 농도를 갖는 높은 온도 안정성을 보여준다. 스위치의 반복 능력은 $10^8$번을 넘어선다. 더하여 AsTeGeSiN 선택 소자를 가진 TaOx 저항성 메모리를 사용한 1 스위치-1저항으로 구성된 메모리 셀을 시연하였다.

• 한국정보통신학회논문지
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• 제17권2호
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• pp.405-413
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• 2013

본 논문에서는 program-verify-read 모드를 갖는 고신뢰성 24bit differential paired eFuse OTP 메모리를 설계하였다. 제안된 program-verify-read 모드에서는 프로그램된 eFuse 저항의 변동을 고려하여 가변 풀-업 부하(variable pull-up load)를 갖는 센싱 마진 테스트 기능을 수행하는 동시에 프로그램 데이터와 read 데이터를 비교하여 PFb(pass fail bar) 핀으로 비교 결과를 출력한다. 그리고 모의실험 결과 program-verify-read 모드에서 24-비트 differential paired eFuse OTP와 24-비트 듀얼 포트 eFuse OTP IP의 센싱 저항은 각각 $4k{\Omega}$과 $50k{\Omega}$으로 differential paired eFuse OTP의 센싱 저항이 작게 나왔다.

• 대한전자공학회논문지SD
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• 제48권7호
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• pp.1-9
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• 2011

멤리스터(Memristor)는 메모리 레지스터의 합성어로 흐른 전하량에 따라 저항이 스스로 변하고 전원이 끊긴 상태에서도 저항 상태가 기억되는 특수한 메모리 소자이다. 본 논문에서는 차세대 메모리소자로 주목받고 있는 멤리스터를 모델링하고 SPICE 시뮬레이션을 위한 behavior모델을 제시한다. 그리고 제안된 모델을 바탕으로 멤리스터 기반의 M_CAM(Memristor MOS content addressable memory)을 설계하였다. 제안된 M_CAM은 기존의 CAM에 비해서 단위 셀 면적과 평균 전력소모가 각각 40%, 96% 감소하였다. 칩은 0.13${\mu}m$ CMOS 공정에서 공급전압이 1.2V를 갖도록 설계되었다.

• Molecules and Cells
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• 제41권8호
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• pp.724-732
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• 2018

Plant defence responses to various biotic stresses via systemic acquired resistance (SAR) are induced by avirulent pathogens and chemical compounds, including certain plant hormones in volatile form, such as methyl salicylate and methyl jasmonate. SAR refers to the observation that, when a local part of a plant is exposed to elicitors, the entire plant exhibits a resistance response. In the natural environment, plants are continuously exposed to avirulent pathogens that induce SAR and volatile emissions affecting neighbouring plants as well as the plant itself. However, the underlying mechanism has not been intensively studied. In this study, we evaluated whether plants "memorise" the previous activation of plant immunity when exposed repeatedly to plant defensive volatiles such as methyl salicylate and methyl jasmonate. We hypothesised that stronger SAR responses would occur in plants treated with repeated applications of the volatile plant defence compound MeSA than in those exposed to a single or no treatment. Nicotiana benthamiana seedlings subjected to repeated applications of MeSA exhibited greater protection against Pseudomonas syringae pv. tabaci and Pectobacterium carotovorum subsp. carotovorum than the control. The increase in SAR capacity in response to repeated MeSA treatment was confirmed by analysing the defence priming of the expression of N. benthamiana Pathogenesis-Related 1a (NbPR1a) and NbPR2 by quantitative reverse-transcription PCR compared with the control. We propose the concept of plant memory of plant defence volatiles and suggest that SAR is strengthened by the repeated perception of volatile compounds in plants.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.174-175
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• 2007

A programmable metallization cell (PMC) memory structure with copper-saturated GeTe solid electrolyte films doped by nitrogen was prepared on a TiW bottom electrode by a co-sputtering technique at room temperature. The $Ge_{45}Te_{55}$ solid electrolyte films deposited with various $N_2$/Ar flow ratios showed an increase of crystallization temperature and especially, the electrolyte films deposited at $N_2$/Ar ratios above 30% showed a crystallization temperature above $400^{\circ}C$, resulting in surviving in a back-end process in semiconductor memory devices. The device with a 200 nm thick $Cu_{1-x}(Ge_{45}Te_{55})_x$ electrolyte switches at 1 V from an "off " state resistance, $R_{off}$, close to $10^5$ to an "on" resistance state, Ron, more than 20rders of magnitude lower for this programming current.

• 국제강구조저널
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• 제18권4호
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• pp.1325-1335
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• 2018

This study dealt with investigating the seismic performance of the smart and shape memory alloy (SMA) and magnets plus rubber-spring (MRS) dampers and their effects on the seismic resistance of multiple-span simply supported bridges. The rubber springs in the MRS dampers were pre-compressed. For this aim, a set of experimental works was performed together with developing nonlinear analytical models to investigate dynamic responses of the bridges subjected to earthquakes. Fragility analysis and probabilistic assessment were conducted to assess the seismic performance for the overall bridge system. Fragility curves were then generated for each model and were compared with those of as-built. Results showed dampers could increase the seismic capacity of bridges. Furthermore, from system fragility curves, use of damper models reduced the seismic vulnerability in comparison to the as-built bridge model. Although the SMA damper showed the best seismic performance, the MRS damper was the most appropriate one for the bridge in that the combination of magnetic friction and pre-compressed rubber springs was cheaper than the shape memory alloy, and had the similar capability of the damper.

• BMB Reports
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• 제42권8호
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• pp.475-481
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• 2009

Emerging data demonstrate pivotal roles for brain insulin resistance and insulin deficiency as mediators of cognitive impairment and neurodegeneration, particularly Alzheimer's disease (AD). Insulin and insulin-like growth factors (IGFs) regulate neuronal survival, energy metabolism, and plasticity, which are required for learning and memory. Hence, endogenous brain-specific impairments in insulin and IGF signaling account for the majority of AD-associated abnormalities. However, a second major mechanism of cognitive impairment has been linked to obesity and Type 2 diabetes (T2DM). Human and experimental animal studies revealed that neurodegeneration associated with peripheral insulin resistance is likely effectuated via a liver-brain axis whereby toxic lipids, including ceramides, cross the blood brain barrier and cause brain insulin resistance, oxidative stress, neuro-inflammation, and cell death. In essence, there are dual mechanisms of brain insulin resistance leading to AD-type neurodegeneration: one mediated by endogenous, CNS factors; and the other, peripheral insulin resistance with excess cytotoxic ceramide production.