• 한국주조공학회지
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• 제15권3호
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• pp.283-290
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• 1995

Molybdenum ingot of 50mm in diameter were obtained from sintered Mo bars by EB drip melting technique. Macroscopic observation of EB remelted ingot indicates that coarse and columnar grains grow in the direction parallel to ingot pulling direction. This can be explained by slow solidification (3mm/min), large temperature gradient and heat flow to this direction. The orientation of columnar structure was found to be <110>, <200> and <211> by the analysis of X-ray diffraction patterns. The contents of typical metallic impurities in Mo sintered bar are 1.2ppm Cr, 3ppm Fe, 44ppm Zr, 150ppm W. Most of metallic impurities were reduced below the order of ppm except zirconium and tungsten by the selective evaporation. In the removal of nonmetallic impurities, oxygen and carbon impurities were lowered from 120 to 6ppm and from 157 to 106ppm, respectively, after first melting. Although the purification effect was not significant with the number of remelting, Vickers hardness was reduced from 217 to 195 and 184 in sequence with increasing the number of remelting.

• 한국자원리싸이클링학회:학술대회논문집
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• 한국자원리싸이클링학회 2006년도 춘계임시총회 및 제27회 학술발표대회
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• pp.90-94
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• 2006

액정(LCD)과 반도체 제조공정에서 발생하는 인산, 질산, 초산, Al, Mo 등이 혼재하고 있는 인산계 혼산폐액을 액정제조공정에서 사용할 수 있는 고순도 에칭액으로 재활용하기 위해서 용매추출법, 진공 증발법, 확산투석법 및 이온교환법의 각각의 기술적 특성을 살린 혼합 처리공정을 이용하여 고순도 인산 회수 기술을 확립하고 상용화 시스템을 개발하고자 하였다. 시험 결과 진공증발에 의해 질산과 초산을 100% 제거할 수 있었고, TOP를 사용한 용매추출에서도 추출 4단, 탈거 6단, 상비 1/3으로 완벽하게 제거할 수 있었다. 이온교환의 전단계로 적용한 확산투석에서 Al 97%, Mo 75% 제거할 수 있었고 이온교환공정에서 Al 및 Mo를 각각 1ppm 이하로 정제할 수 있었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 추계학술발표회
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• pp.54-54
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• 1997

• 청정기술
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• 제6권1호
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• pp.79-84
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• 2000

반도체 세정공정에서 사용되는 화학약품의 소모량을 줄이기 위하여 소량의 전해질 혹은 초순수만을 전기분해 시켜 생성되는 전리수를 이용하여 금속 불순물들이 오염된 실리콘 웨이퍼를 습식세정을 하였다. 전리수는 다양한 범위의 pH 및 산화환원전위(oxidation-reduction potential, ORP)를 형성할 수 있으며, 전리수의 양극수는 pH 및 산화환원전위를 각각 4.7 및 +1000mV의 산화성 수용액을, 전리수의 음극수는 pH 및 산화환원전위가 각각 6.3 및 -550mV를 40분 이상 유지하고 있었다. 실리콘 웨이퍼 세정 전과 후의 금속 불순물 측정은 ICP-MS(Inductively coupled plasma spectroscopy)를 사용하였다. 전리수 가운데 양극수는 구리 불순물 제거에, 음극수는 철 불순물 제거에 효과적임을 확인하였다.

• 반도체디스플레이기술학회지
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• 제3권2호
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• pp.5-9
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• 2004

Microcircuit fabrication requires precise control of impurities in tiny regions of the silicon. These regions must be interconnected to create components and VLSI circuits. The patterns to define such regions are created by lithographic processes. In order to image features smaller than 70 nm, it is necessary to employ non-optical technology (or next generation lithography: NGL). One such NGL is extreme ultra-violet lithography (EUVL). EUVL transmits the pattern on the wafer surface after reflecting ultra-violet through mask pattern. If particles exist on the blank mask, it can't transmit the accurate pattern on the wafer and decrease the reflectivity. It is important to care the blank mask. We removed the particles on the wafer using focused ion beam (FIB). During removal, FIB beam caused damage the multi layer mask and it decreased the reflectivity. The relationship between particle removal and reflectivity is examined: i) transmission electron microscope (TEM) observation after particle removal, ii) reflectivity simulation. It is found that the image mode of FIB is more effective for particle removal than spot and bar mode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.1-5
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• 2000

As the semiconductor devices are miniaturized, the number of the unit cleaning processes increases. In order to processes by conventional RCA cleaning process, the consumption of volume of liquid chemical and DI water became huge. Therefore, the problem of environmental issues are evolved by the increased consumption of chemicals. To resolve this matter, an advanced cleaning process by Electrolyzed Water was studied in this work. The electrolyzed water was made by an electrolysis equipment which was composed of three chambers of anode, cathode, and middle chambers. In the case of electrolyzed water with electrolytes in the middle chamber, oxidatively acidic water of anode and reductively alkaline water of cathode were obtained. The oxidation/reduction potentials and pH of anode water and cathode water were measured to be +l000mV and 4.8, and -530mV and 6.3, respectively. The Si-wafers contaminated with metallic impurities were cleaning with the electrolyzed water. To analysis the amounts of metallic impurities on Si-water surfaces, ICP-MS(Inductively Coupled Plasma-Mass spectrometer) was introduced. From results of ICP-MS measurements, it was concluded that the ability of electrolyzed water was equivalent to that of the conventional RCA cleaning.

• 한국재료학회지
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• 제21권12호
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• pp.673-678
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• 2011

With an increased production of Printed Circuit Boards (PCBs) in electronic equipment, the consumption of solder alloys is growing globally. Recently, increasing importance of recycling solder scrap has been recognized. Generally, solder scrap contains many impurities such as plastics and other metals. Hazardous components must be eliminated for recycling solder scrap. The present work studied pretreatment for reuse of solder scrap alloys. An experiment was conducted to enhance the cleanliness of solder scrap melt and eliminate impurities, especially lead. Physical separation with sieving and magnetic force was made along with pyrometallurgical methods. A small decrease in lead concentration was found by high temperature treatment of solder scrap melt. The impurities were removed by filtration of the solder scrap melt, which resulted in improvement of the melt cleanliness. A very low concentration of lead was achieved by a zone melting treatment with repeated passage. This study reports on a pretreatment process for the reuse of solder scrap that is lead free.

• 전자공학회논문지A
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• 제30A권1호
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• pp.31-43
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• 1993

Thermal behavior and $O_{2}$ plasma effects on residue and penetrated impurities formed by reactive ion etching (RIE) in CHF$_{3}$/C$_{2}$F$_{6}$ have been investigated using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) techniques. Decomposition of polymer residue film begins between 200-300.deg. C, and above 400.deg. C carbon compound as graphite mainly forms by in-situ resistive heating. It reveals that thermal decomposition of residue can be completed by rapid thermal anneal above 800.deg. C under nitrogen atmosphere and out-diffusion of penetrated impurities is observed. The residue layer has been removed with $O_{2}$ plasma exposure of etched silicon and its chemical bonding states have been changed into F-O, C-O etc.. And $O_{2}$ plasma exposure results in the decrease of penetrated impurities.

• Bulletin of the Korean Chemical Society
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• 제14권6호
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• pp.696-700
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• 1993

Gold bonding wire of 0.076 mm in diameter used in semiconductor industry, is dissoved in aqua regia. The solution is then evaporated to near dryness several times with a few drops of HCl added to prepare the final sample solution in 5% HCl. The gold matrix is separated from trace impurities by controlled potential deposition. The whole electrolysis has been carried out inside a clean bench. An optimum potential is found to be +0.25 V to give more than 99.9% Au matrix removal with better than 90 analytes remaining in the electrolyte solution. Isotope dilution calibration is employed to get the best accuracy and precision. Analytical results are presented with determination limits of the analytical method.

• 자원리싸이클링
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• 제5권2호
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• pp.57-62
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• 1996

철강산세작업중 발생하는 폐산세용액의 재활용중 산화철이 부산물로 생산되고 있다. 이 산화철은 안료 및 훼라이트원료로 사용되고 있다. 훼라이트원료로 사용되는 산화철은 불순물을 엄격히 제한하고 있다. 본 연구에서는 산화철의 주요 불순물인 실리카 및 기타성분을 제거하기 위하여 폐산세용액에서 여과법, 흡착매체법, Fe leaching, 중화법 등 여러 가지 제거방법으로 불순물제거 실험을 하여, 각 방법의 효과를 고찰하였다.