• Title/Summary/Keyword: Relaxation Time

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Tensile Test and Creep Tests of ETFE Membrane (ETFE 막재에 대한 인장실험과 크리프 실험)

  • Kim, Jae-Yeol;Kang, Joo-Won
    • Journal of Korean Association for Spatial Structures
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    • v.10 no.3
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    • pp.57-64
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    • 2010
  • Uniaxial tensile tests of ETFE membrane are performed in this paper. Three kinds ETFE membrane with different thickness are used in the tests. The tensile strength, the tensile strain at break and the stress-strain curve are obtained from the tests. Futhermore, The cycle loading test of ETFE membrane is carried out through using different values of cycle stress. The residual strain, the relaxation of stress and the change of the elastic modulus of foil are investigated. In the creep test, three kinds of temperature (25, 40 and 60 $^{\circ}C$)and three kinds of stress(3,6and9 MPa) are set respectively and the creep time lasts 24 hours.

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Two-Dimensional Simulation of MOS Transistors Using Numerical Method (수치해석 방법에 의한 2차원적인 MOS Transistor의 시뮬레이션에 관한 연구)

  • 정태성;경종민
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.22 no.5
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    • pp.93-101
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    • 1985
  • A two-dimensional numerical analysis progranl, called SOMOS ( simulation of MO5 transistors), has been developed for the simulation of MOSFET's with various channel lengths and bias conditions. The finite difference approximation of the fundamental equa-tions are formulated using Newton's method for Poisson's equation and the divergence theorem for the continuity equation. For the solution of the lincariBed equations, SOR (successive over relaxation) method and Gummel's algorithm have been employed, The total simulation time for oar operating point is varying between 30 sec. and 4 min. on VAX 11/780 depending on bias conditions, The nonuniform mesh was generated and refined automatically to account for various bias values and the potential distributions.

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Strong Correlation Effect by the Rare Earth Substitution on Thermoelectric Material Bi2Te3 ; in GGA+U Approach

  • Quang, Tran Van;Kim, Miyoung
    • Proceedings of the Korean Magnestics Society Conference
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    • 2013.05a
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    • pp.19-20
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    • 2013
  • Thermoelectic properties of the typical thermoelectric host materials, the tellurides and selenides, are known to be noticeably changed by their volume change due to the strain [1]. In the bismuth telluride ($Bi_2Te_3$) crystal, a substitution of rare-earth element by replacing one of the Bi atoms may cause the change of the lattice parameters while remaining the rhombohedral structure of the host material. Using the first-principles approach by the precise full potential linearized augmented plane wave (FLAPW) method [2], we investigated the Ce substitution effect on the thermoelectric transport coefficients for the bismuth telluride, employing Boltzmann's equation in a constant relaxation-time approach fed with the FLAPW wave-functions within the rigid band approximation. Depending on the real process of re-arrangement of atoms in the cell to reach the equilibrium state, $CeBiTe_3$ was found to manifest a metal or a narrow bandgap semiconductor. This feature along with the strong correlation effect originated by the 4f states of Ce affect significantly on the thermoelectric properties. We showed that the position of the strongly localized f-states in energy scale (Fig. 1, f-states are shaded) was found to alter critically the transport properties in this material suggesting an opportunity to improve the thermoelectric efficiency by tuning the external strain which may changing the location of the f-sates.

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Effects of Chemical Vapor Deposition Parameters on The Hardness and the Structural Characteristics of TiN Film (TiN피막의 경도 및 구조적 특성에 미치는 화학증착 조건의 영향)

  • Shin, Jong-Hoon;Lee, Seong-Rae;Baek, Young-Hyun
    • Journal of Surface Science and Engineering
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    • v.20 no.3
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    • pp.106-117
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    • 1987
  • The microhardness and the structural characteristics of the chemically vapor deposited TiN film on the 430 stainless steel substrate have been investigated with various deposition parameters such as the deposition time, the total flow rate, the flow rate ratio $(H_2/N_2)$, and the deposition temperature. The most important factor to affect the microhardness of the TiN film in this study was the denseness of the structure in connection with the degree of the lattice strain. The relationship between the lattice parameter changes and the grain size variation under all deposition conditions generally followed the grain boundary relaxation model. The (111) preferred orientation prevailed in the early stage of the deposition conditions, however, the (200) preferred orientation was developed in the later stage. The surface morphology at optimum conditions displayed a dense diamond shaped structure and the microhardness of the films was high (1700-2400Hv) regardless of the type of the substrates used.

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Sensitivity Analysis for Flexural Behaviors of PSC Members (프리스트레스트 콘크리트 휨 부재의 민감도 해석)

  • Lee, Jon-Ja;Lee, Bong-Goo;Kim, Min-Joo;Lee, Yong-Hak
    • Journal of the Korea institute for structural maintenance and inspection
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    • v.6 no.2
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    • pp.183-194
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    • 2002
  • A general procedure to evaluate the sensitivity of design variables to stresses and strains in PSC flexural members is proposed. To accomplish the purpose of this study, long-term losses including creep, shrinkage, and PS steel relaxation are formulated based on the equilibrium states of the deformed sectional geometry. Thereby, the formulation follows the basic steps which consider the fundamental formulas adopted by CEB-FIP, ACI, and KCI rather than the age adjusted effective modulus concept. Twenty-one design variable including the material and geometrical properties of concrete, nonprestressing steel and prestressing steel, and the geometry of the cross section are considered in the sensitivity analysis. The gradients of the stresses and strains needed for the sensitivity assessment are calculated in a closed format. The derived formulation is applied to the T-type section PSC beam with prestressing and nonprestressing steels for the sensitivity analysis. The analytically calculated sensitivity results are compared with those numerically calculated to ensure the validity of the proposed procedure.

Luminescence and Crystal-Field Analysis of Europium and Terbium Complexes with Oxydiacetate and 1,10-Phenanthroline

  • Kang, Jun-Gill;Kim, Tack-Jin
    • Bulletin of the Korean Chemical Society
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    • v.26 no.7
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    • pp.1057-1064
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    • 2005
  • Photoluminescence (PL) spectra of Eu(III) and Tb(III) complexes with mixed oxydiacetate (ODA) and 1,10-phenanthroline (phen) ligands and with homoleptic ODA reveal characteristic line-splitting at 10 K, depending on the site-symmetry of the lanthanide ion in the complex. The energy-level schemes of the $^7F_J$ states and the emitting levels for Eu(III) and Tb(III) ions have been proposed by simulating the line splitting in the framework of crystal-field Hamiltonian. The sets of refined crystal-field parameters for the experimentally determined sitesymmetry satisfactorily reproduce the experimental energy-level schemes. In addition, the PL quantum yield and the decay time were determined at room temperature. The PL quantum yields of [$Eu(ODA){\cdot}(phen){\cdot}4H_2O]^+$ and [Tb$(ODA){\cdot}(phen){\cdot}4H_2O]^+$ in the crystalline state (Q = 17.7 and Q = 56.6%, respectively) are much greater than those of [Eu($ODA)_3]^{3-}and\;[Tb(ODA)_3]^{3-}$(Q = 1.1 and Q = 1.3, respectively), due to the energy transfer from phen to the lanthanide ion. In the aqueous state, the relaxation of the phen moiety due to the solvent results in the reduction of the quantum yield and the shortening of the lifetime.

Review of Membrane Tension Maintenance System for Membrane Structures through Membrane Tension Measurement (막장력 측정을 통한 막구조물의 장력 유지관리 시스템 검토)

  • Jin, Sang-Wook;Shon, Su-Deok;Lee, Seung-Jae
    • Journal of Korean Association for Spatial Structures
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    • v.16 no.2
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    • pp.39-45
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    • 2016
  • Membrane structure is a system that is stabilized by maintaining a tensile state of the membrane material that originally cannot resist the bending or pressure. Also, it is a system that allows the whole membrane structure to bear external loads caused by wind or precipitation such as snow, rain and etc. Tension relaxation phenomenon can transpire to the tension that is introduced to the fabric over time, due to the innate characteristics of the membrane material. Thus, it is important to accurately understand the size of the membrane tension after the completion of the structures, for maintenance and management purposes. The authors have proposed the principle of theoretically and indirectly measuring the tension by vibrating the membrane surface with sound waves exposures against the surface, which is compartmentalized by a rectangular boundary, and by measuring the natural frequency of the membrane surface that selectively resonates. The authors of this paper measured the tension of preexisting membrane structure for its maintenance by using the developed portable measurement equipment. Through analyzing the measurement data, the authors review the points that should be improved and the technical method for the new maintenance system of membrane tension.

Surface Analysis and Electrical Properties for Complex with Concentration of Metal ion in LB Ultra-thin Films Using IMI-O Polymer (IMI-O 고분자 LB막의 금속 이온의 착체 농도에 따른 전기특성 및 표면분석)

  • Jung, S.B.;Yoo, S.Y.;Park, J.C.;Kwon, Y.S.
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1711-1713
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    • 2000
  • We fabricated an IMI-O polymer containing an imidazole group that could form a complex structure between the monolayer and the metal ions at the air-water interface. Also, the surface analysis and the electrical properties of metal ion complex of Langmuir-Blodgett (LB) films were investigated by using $\pi$-A isotherms. Atomoic force microscopy (AFM), current-voltage (I-V) measurements. In the $\pi$-A isotherms the molecular area was expanded with $Fe^{3+}$ concentration increase. It is considered that the expansion of molecular area is due to electrostatic repulsion between the polymer chains and hydrophobic increase of ionic strength. In the I-V characteristics, it is found that the limiting area has effects on the change of conductivity. And, the dielectric relaxation time decreased for increase of the $Fe^{3+}$ concentration.

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An Experimental Study on Particle Collection Efficiency of the Slit Impactor (슬릿 임팩터의 입자 포집 효율에 관한 연구)

  • 황창덕;허재영;김상수
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.13 no.4
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    • pp.689-696
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    • 1989
  • In this experimental study, relative particle size distribution was measureed at the inlet and outlet of the slit impactor using the particle sizer. The imployed measuring method of the size distribution was different from the conventional method. This measurement system has the advantage of obtaining the particle collection efficiency for various particle size easily and at once compared with other methods. The effects of jet to plate distance and Reynolds number on the characteristic impactor efficiency curves have been studied. In the results of this experiment, the increment of collection efficiency was observed as Reynolds number increases in the case of S/W = 1/2 but was very slight. The influence of S/W is more remarkable than that of Reynolds number on the particle collection efficiency.

Dynamic File Allocation Problems In Distributed Systems (분산 시스템의 동적 파일 할당 연구)

  • Seo, Pil-Kyo
    • The Transactions of the Korea Information Processing Society
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    • v.4 no.7
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    • pp.1681-1693
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    • 1997
  • In a distributed system, the simple file allocation problem determines the placement of copies of a file, so as to minimize the operating costs. The simple file allocation problem assumes the cost parameters to be fixed. In practice, these parameters change over time. In this research, dynamic file allocation problem for both single and multiple files are considered, which account for these changing parameters. A model for dynamic file allocation problem is formulated as a mixed integer program for which Lagrangian relaxation based branch-and-bound algorithm is developed. This algorithms is implemented and its efficiency is tested on medium to large test problems.

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