• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.327-331
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• 2016

Resistive random access memory (ReRAM) of metallic conduction channel mechanism is based on the electrochemical control of metal in solid electrolyte thin film. Amorphous chalcogenide materials have the solid electrolyte characteristic and optical reactivity at the same time. The optical reactivity has been used to improve the memory switching characteristics of the amorphous $As_2Se_3$-based ReRAM. This study focuses on the formation of holographic lattices patterns in the amorphous $As_2Se_3$ thin film for straight conductive channel. The optical parameters of amorphous $As_2Se_3$ thin film which is a refractive index and extinction coefficient was taken by n&k thin film analyzer. He-Cd laser (wavelength: 325 nm) was selected based on these basic optical parameters. The straighten conduction channel was formed by holographic lithography method using He-Cd laser.$ Ag^+$ ions that photo-diffused periodically by holographic lithography method will be the role of straight channel patterns. The fabricated ReRAM operated more less voltage and indicated better reliability.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.236-237
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• 2012

ZnO nanorods were grown on R-plane sapphire substrates with the seed layers annealed at different temperature. The effects of annealing temperature for the seed layers on the properties of the ZnO nanorods were investigated by scanning electron microscopy, X-ray diffraction, UV-visible spectroscopy, and photoluminescence. For the as-prepared seed layers, the ZnO nanorods and the ZnO nanosheets were observed. Only the ZnO nanorods were grown as the annealing temperature was above $700^{\circ}C$. The optical transmittance in the UV region was almost zero while that in the visible region was gradually increased as the annealing temperature increased to $700^{\circ}C$. The optical band gap of the ZnO nanorods was increased as the annealing temperature increased to $700^{\circ}C$. In the visible region, the refractive index was decreased with increasing the wavelength, and the extinction coefficient was decreased as the annealing temperature increased to $700^{\circ}C$. The non-linear exciton radiative life time of the FX emission peak was established by cubic equation. The values of Varshni's empirical equation fitting parameters were ${\alpha}=4{\times}10^{-3}eV/K$, ${\beta}=1{\times}10^4K$, and $E_g(0)=3.335eV$ and the activation energy was found to be about 94.6 meV.

• Advances in nano research
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• 제14권6호
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• pp.557-573
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• 2023

The rapid growth of zinc-oxide (ZnO) nanostructures (NSs) on woven carbon fiber (WCF) is reported in this study employing a microwave-aided chemical bath deposition process. The effects of different process parameters such as molar concentration, microwave duration and microwave power on morphologies and growth rate of the ZnO on WCF were studied. Furthermore, an attempt has been taken to study influence of different type of growth solutions on ZnO morphologies and growth rates. The surface functionalization of WCF fabrics is achieved by successful growth of crystalline ZnO on fiber surface in a very short duration through one-step microwave synthesis. The morphological, structural and compositional studies of ZnO-modified WCF are evaluated using field-emission scanning electron microscopy, X-ray diffraction and energy dispersive X-ray spectroscopy respectively. Good amount of zinc and oxygen has been seen in the surface of WCF. The presence of the wurtzite phase of ZnO having crystallite size 30-40 nm calculated using the Debye Scherrer method enhances the surface characteristics of WCF fabrics. The UV-VIS spectroscopy is used to investigate optical properties of ZnO-modified WCF samples by absorbance, transmittance and reflectance spectra. The variation of different parameters such as dielectric constants, optical conductivity, refractive index and extinction coefficient are examined that revealed the enhancement of optical characteristics of carbon fiber for wide applications in optoelectronic devices, carbon fiber composites and photonics.

• Current Optics and Photonics
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• 제4권1호
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• pp.31-43
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• 2020

The feasibility of the application of terahertz electromagnetic waves in the diagnosis of prostate cancer was examined. Four samples of incomplete cancerous prostatic paraffin-embedded tissues were examined using terahertz spectral imaging (TPI) system and the results obtained by comparing the absorption coefficient and refractive index of prostate tumor, normal prostate tissue and smooth muscle from one of the paraffin tissue masses examined were reported. Three hundred and sixty cases of absorption coefficients from one of the paraffin tissues examined were used as raw data to classify these three tissues using the Principal Component Analysis (PCA) and Least Squares Support Vector Machine (LS-SVM). An excellent classification with an accuracy of 92.22% in the prediction set was achieved. Using the distribution information of THz reflection signal intensity from sample surface and absorption coefficient of the sample, an attempt was made to use the TPI system to identify the boundaries of the different tissues involved (prostate tumors, normal and smooth muscles). The location of three identified regions in the terahertz images (frequency domain slice absorption coefficient imaging, 1.2 THz) were compared with those obtained from the histopathologic examination. The tissue tumor region had a distinctively visible color and could well be distinguished from other tissue regions in terahertz images. Results indicate that a THz spectroscopy imaging system can be efficiently used in conjunction with the proposed advanced computer-based mathematical analysis method to identify tumor regions in the paraffin tissue mass of prostate cancer.

• 한국안광학회지
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• 제9권2호
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• pp.361-370
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• 2004

정확한 사위량 측정을 위한 전제조건이 되는 굴절이상의 완전교정과 광학중심점과 동공중심점의 일치가 선행되지 않을 때 발생할 수 있는 사위량 변동을 알아보기 위해 근시성 굴절이상안 120명을 대상으로 동공중심거리, 장용안경의 광학중심점거리, 안경장용 상태의 사위량을 Von Graefe법을 이용하여 측정하고, 검사대상자의 동공중심과 광학중심점을 정확하게 일치시키고 굴절이상도를 완전교정한 상태에서의 사위량을 각각 측정하여 다음과 같은 결과를 얻을 수 있었다. 1. 굴절이상도가 미교정되고 광학중심점과 동공중심점이 미조정 된 안경을 장용하고 측정한 사위량과 굴절이상도를 완전교정하고 광학중심점과 동공중심이 일치된 상태에서 측정한 사위량은 완전교 정시 정위는 10.0%에서 12.5%로 증가하였고, 외사위는 67.5%에서 62.5%로 감소, 내사위는 22.5%에서 25.0%로 증가하였다. 2. 평균 광학중심점 거리는 31.7024mm, 동공중심점 거리는 평균 31.4881mm로 안경의 Optical Center Distance가 동공중심거리보다 약 0.2143mm 큰 것으로 측정되었다. 3. 동공중심점과 광학중심점이 일치된 안경과 동공중심과 광학중심이 불일치된 안경을 장용한 사람은 각각 37.5%, 62.5%로 조사되었다. 4. 미교정된 근시안 가운데 동공중심과 광학중심이 일치한 사람을 대상으로 근시도를 완전교정하고 사위를 측정한 결과 근시도를 미교정했을 때 보다 외사위량은 53.33%가 감소하였고, 내사위량은 20.0%가 증가하였다. 5. 근시도를 완전교정하고 광학적중심과 동공중심을 정확하게 일치시켜 측정한 외사위량은 구안경 장용시보다 $1.11{\Delta}$ 감소하였고, 내사위량은 $0.39{\Delta}$ 증가한 것으로 나타나 검정결과 매우 유의하였다(p<0.05).

• 대한원격탐사학회지
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• 제30권1호
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• pp.47-59
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• 2014

화산재입자의 굴절률과 산란 같은 고유 광학 특성으로 결정되는 분광학적 신호는 원격탐사 센서를 통하여 측정될 수 있지만, 화산 폭발 이후 생성된 화산재입자의 성분에 대한 굴절률에 관한 정보는 매우 제한적이었다. 따라서, 화산재입자의 원격탐사의 강건성을 개선하기 위하여 화산재입자와 복사전달 과정의 상호작용에 대한 정확한 이해가 필요하다. 본 연구에서는 화산재 주요 성분으로 알려진 화산성 안산암과 부석에 대한 입자 소산계수, 산란 위상함수, 비대칭 계수, 단산란 알베도 값을 정량화 하였다. 이러한 화산재입자의 고유 광학 특성값은 복사전달모델의 입력자료로 이용하여 다양한 에어러솔 광학두께(${\tau}$) 및 기하조건에서 원격탐사 센서(인공위성과 지상관측용)가 측정하는 이론적인 복사량과 화산재입자 특성의 관계를 분석하였다. 복사전달모델 분석결과, 대기권 최상층부에서 ${\tau}$ 에 대한 복사량의 변화율의 평균값은 안산암의 경우 부석보다 6배 정도 크게 나타났다. 지표에서 이러한 변화율은 ${\tau}$ <1인 경우 양의 상관관계를 보이지만, ${\tau}$ >1인 경우에는 음의 상관관계를 보였다. 그러나, 적외선 영역인 11 ${\mu}m$ 에서는 차이가 매우 적게 나타났으며, 여기서 발생하는 복사량의 오차범위는 광학두께가 증가할수록 커지는 양상을 보이며, 다항 회귀함수로 표현될 수 있다. 이러한 결과는 원격 탐사 관측자료를 이용한 화산재 관측에 있어서 화산재의 정량적 분석에 도움이 될 것이다.

• Journal of the Optical Society of Korea
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• 제19권6호
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• pp.705-710
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• 2015

The fabrication process of thin boron-doped nanocrystalline diamond (B-NCD) microelectrodes on fused silica single mode optical fiber cladding has been investigated. The B-NCD films were deposited on the fibers using Microwave Plasma Assisted Chemical Vapor Deposition (MW PA CVD) at glass substrate temperature of 475 ℃. We have obtained homogenous, continuous and polycrystalline surface morphology with high sp³ content in B-NCD films and mean grain size in the range of 100-250 nm. The films deposited on the glass reference samples exhibit high refractive index (n=2.05 at λ=550 nm) and low extinction coefficient. Furthermore, cyclic voltammograms (CV) were recorded to determine the electrochemical window and reaction reversibility at the B-NCD fiber-based electrode. CV measurements in aqueous media consisting of 5 mM K₃[Fe(CN)₆] in 0.5 M Na₂SO₄ demonstrated a width of the electrochemical window up to 1.03 V and relatively fast kinetics expressed by a redox peak splitting below 500 mV. Moreover, thanks to high-n B-NCD overlay, the coated fibers can be also used for enhancing the sensitivity of long-period gratings (LPGs) induced in the fiber. The LPG is capable of measuring variations in refractive index of the surrounding liquid by tracing the shift in resonance appearing in the transmitted spectrum. Possible combined CV and LPG-based measurements are discussed in this work.

• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.73-79
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• 2013

Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

• 한국산학기술학회논문지
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• 제19권8호
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• pp.353-359
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• 2018

본 연구는 타각적 굴절검사에 의한 굴절이상도를 분석하여 현재 임상에서 사용되고 있는 개방형 자동굴절력계와 내부형 자동굴절력계의 성능을 평가하고자 하였다. 시력교정 및 안질환이 없는 만 18세 이상~20세 이하(평균 $19.84{\pm}0.54$세) 초기성인을 대상으로 포롭터를 활용한 자각적 굴절검사와 개방형 자동굴절력계 그리고 내부형 자동굴절력계의 순서로 굴절이상을 검사하였다. 자각적 굴절검사와 개방형 자동굴절검사의 Power vector 성분 SE, $J_0$, $J_{45}$의 상관관계는 r=0.92(p=0.00), r=0.14(p=0.43), r=0.12(p=0.47)이고 내부형 자동굴절검사는 r=0.98(p=0.00), r=0.21(p=0.22), r=0.08(p=0.65)으로 SE 성분은 통계적으로 매우 유의한 양적 상관성을 나타냈다. 그리고 SE, $J_0$, $J_{45}$ 성분에 대한 차이의 평균은 $-0.13{\pm}0.53D$(p=0.17), $+0.33{\pm}0.68D$(p=0.01), $+0.13{\pm}0.68D$(p=0.26)로 $J_0$ 성분만 통계적으로 유의한 차이를 보였고 내부형 자동굴절검사와의 SE, $J_0$, $J_{45}$ 차이값은 $-0.30{\pm}0.42D$(p=0.00), $+0.30{\pm}0.71D$(p=0.02), $-0.02{\pm}0.63D$(p=0.88)로 SE, $J_0$ 성분에서 유의한 차이가 있었다. 정확도계수와 신뢰구간은 자각적 굴절검사와 개방형 자동굴절검사에서 SE, $J_0$, $J_{45}$ 성분이 1.04(+0.91~-1.17D), 1.33(+1.66~-1.00D), 1.34(+1.46~-1.20D)이고 내부형 자동굴절검사와는 0.83(+0.52~-1.12D), 1.40(+1.69~-1.09D), 1.24(+1.21~-1.25D)로 분석되었다. 시력검사에 활용되는 개방형 내부형 자동굴절력계에 의한 측정결과는 자각적 굴절검사의 굴절이상도를 처방하는데 예비시력 검사기기로 가능하다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.360-360
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• 2012

Zn-Sn-O (Zinc-Tin-Oxide; ZTO) thin films have been gaining extensive academic and industrial attentions owing to a semiconducting channel materials applicable to large-sized flat-panel displays. Due to the constituent oxides i.e., ZnO and SnO2, the resultant Zn-Sn-O thin films possess artificially controllable bandgaps and transmittances especially effective in the visible regime. The current approach employed RF sputtering in depositing the Zn-Sn-O thin films onto glass substrates at ambient conditions. This work places its main emphases on the electrical/optical features which are closely related to the combinations of processing variables. The electrical characterizations are performed using dc-based current-voltage characteristics and ac-based impedance spectroscopy. The optical constants, i.e., refractive index and extinction coefficient, are calculated through spectroscopic ellipsometry along with the estimation of bandgaps. The charge transport of the deposited ZTO thin films is based on electrons characteristic of n-type conduction. In addition to the basic electrical/optical information, the delicate manipulation of n-type conduction is indispensible in diversifying the industrial applications of the ZTO thin films as active devices in information and energy products. Ultimately, the electrical properties are correlated to the processing variables along with the underlying mechanism which largely determines the electrical and optical properties.