• Title/Summary/Keyword: Recombination rate

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Cathodoluminescence Enhancement of CaTiO3:Pr3+ by Ga Addition

  • Kang, Seung-Youl;Byun, Jung-Woo;Kim, Jin-Young;Suh, Kyung-Soo;Kang, Seong-Gu
    • Bulletin of the Korean Chemical Society
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    • v.24 no.5
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    • pp.566-568
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    • 2003
  • The phosphor $CaTiO_3:Pr^{3+}$ attracts much attention as a low-voltage red phosphor because of its good chromaticity and intrinsic conductivity. The addition of Ga into this CaTiO₃:Pr led the luminance intensity to greatly enhance without the change of the wavelength for the electronic transition and the peak shape of it. The increase of the recombination rate of electron-hole pairs through the Ga ion doping, which was expected to play a role of a hole-trap center, is proposed to be one of the reasons for the enhancement of the cathodoluminescence intensity.

A Study on the Application of Thin Film Passivation and Crystalline Silicon Solar Cells Using PECVD Process (PECVD 공정을 이용한 후면 패시베이션 및 결정질 실리콘 태양전지 적용에 관한 연구)

  • Kim, Kwan-Do
    • Journal of the Semiconductor & Display Technology
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    • v.19 no.2
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    • pp.68-71
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    • 2020
  • In this study, SiNx and Al2O3 thin film was manufactured using PECVD deposition process and applied to crystalline silicon solar cells, resulting in 16.7% conversion efficiency. The structural improvement experiment of the rear electrode resulted in a 1.7% improvement in conversion efficiency compared to the reference cell by reducing the recombination rate of minority carriers and increasing the carrier lifetime by forming a passivation layer consisting of SiNx and Al2O3 thin films through the PECVD process.

A Study on the modelling of DI Switching Device by FEM (DI 스위칭 소자의 Turn on 특성에 관한 연구)

  • Lee, Kye-Hun;Kang, Ho-Cheol;Sung, Man-Young;Lee, Hyun-Seok
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.1253-1255
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    • 1993
  • Double Injection(DI) switching devices consist of p+ and n+ contact separated by a nearly intrinsic semiconductor region containing deep trap. The FEM is chosen as a simulation method for DI switching device, because of the advantage in local mesh refinement and computer memory comparing with other methods. And Scharfetter-Gummel(S-G) scheme is applied, with which an accurate-seven point Gaussian Quadrature rule is combined. The existance of deed trap requires the modification of conventional equation set. So recombination rate equation is modified and a new equation is included in the equation set which conventionally consists of Poisson equation and current continuity equations.

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Nonequilibrium Heat Transfer Characteristics During Ultrafast Pulse Laser Heating of a Silicon Microstructure

  • Lee Seong Hyuk
    • Journal of Mechanical Science and Technology
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    • v.19 no.6
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    • pp.1378-1389
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    • 2005
  • This work provides the fundamental knowledge of energy transport characteristics during very short-pulse laser heating of semiconductors from a microscopic viewpoint. Based on the self-consistent hydrodynamic equations, in-situ interactions between carriers, optical phonons, and acoustic phonons are simulated to figure out energy transport mechanism during ultrafast pulse laser heating of a silicon substrate through the detailed information on the time and spatial evolutions of each temperature for carriers, longitudinal optical (LO) phonons, acoustic phonons. It is found that nonequilibrium between LO phonons and acoustic phonons should be considered for ultrafast pulse laser heating problem, two-peak structures become apparently present for the subpicosecond pulses because of the Auger heating. A substantial increase in carrier temperature is observed for lasers with a few picosecond pulse duration, whereas the temperature rise of acoustic and phonon temperatures is relatively small with decreasing laser pulse widths. A slight lagging behavior is observed due to the differences in relaxation times and heat capacities between two different phonons. Moreover, the laser fluence has a significant effect on the decaying rate of the Auger recombination.

Temperature Dependence of Efficiency Droop in GaN-based Blue Light-emitting Diodes from 20 to 80℃

  • Ryu, Guen-Hwan;Seo, Dong-Joo;Ryu, Han-Youl
    • Current Optics and Photonics
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    • v.2 no.5
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    • pp.468-473
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    • 2018
  • We investigate the temperature dependence of efficiency droop in InGaN/GaN multiple-quantum-well (MQW) blue light-emitting diodes (LEDs) in the temperature range from 20 to $80^{\circ}C$. When the external quantum efficiency (EQE) and the wall-plug efficiency (WPE) of the LED sample were measured as injection current and temperature varied, the droop of EQE and WPE was found to be reduced with increasing temperature. As the temperature increased from 20 to $80^{\circ}C$, the droop ratio of EQE was decreased from 16% to 14%. This reduction in efficiency droop with temperature can be interpreted by a temperature-dependent carrier distribution in the MQWs. When the carrier distribution and radiative recombination rate in MQWs were simulated and compared for different temperatures, the carrier distribution was found to become increasingly homogeneous as the temperature increased, which is believed to partly contribute to the reduction in efficiency droop with increasing temperature.

Transparent Counter Electrode for Quantum Dot-Sensitized Solar Cells with Nanotube Electrodes (나노튜브 전극 기반 양자점 감응 태양전지 구현을 위한 투명한 상대전극)

  • Kim, Jae-Yup
    • Journal of the Korean institute of surface engineering
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    • v.52 no.1
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    • pp.1-5
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    • 2019
  • Anodic oxidized $TiO_2$ nanotube arrays are promising materials for application in photoelectrochemical solar cells as the photoanode, because of their attractive properties including slow electron recombination rate, superior light scattering, and smooth electrolyte diffusion. However, because of the opacity of these nanotube electrodes, the back-side illumination is inevitable for the application in solar cells. Therefore, for the fabrication of solar cells with the anodic oxidized nanotube electrodes, it is required to develop efficient and transparent counter electrodes. Here, we demonstrate quantum dot-sensitized solar cells (QDSCs) based on the nanotube photoanode and transparent counter electrodes. The transparent counter electrodes based on Pt electrocatalysts were prepared by a simple thermal decomposition methods. The photovoltaic performances of QDSCs with nanotube photoanode were tested and optimized depending on the concentration of Pt precursor solutions for the preparation of counter electrodes.

Investigation of Trap-Assisted-Tunneling Mechanism in L-Shaped Tunneling Field-Effect-Transistor at Low Bias (L형 터널 트랜지스터의 트랩-보조-터널링 현상 조사)

  • Najam, Faraz;Yu, Yun Seop
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2019.05a
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    • pp.475-476
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    • 2019
  • L-shaped tunneling field-effect-transistor (LTFET) is considered a superior device over conventional TFETs. However, experimentally demonstrated LTFET demonstrated poor subthreshold characteristics which was attributed to trap-assisted-tunneling (TAT) caused by presence of trap states. In this paper, TAT mechanism in the experimentally demonstrated LTFET is investigated with the help of band diagram and TAT recombination rate (GTAT).

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Photocatalytic Degradation and Adsorptive Removal of Tetracycline on Amine-Functionalized Graphene Oxide/ZnO Nanocomposites

  • Thanh Truong Dang;Hoai-Thanh Vuong;Sung Gu Kang;Jin Suk Chung
    • Korean Chemical Engineering Research
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    • v.61 no.4
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    • pp.635-644
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    • 2023
  • Due to the rapid development of the livestock industry, particularly due to residual pharmaceutical antibiotics, environmental populations have been negatively affected. Herein, we report a ZnO/melamine-functionalized carboxylic-rich graphene oxide (ZFG) photocatalyst for visible light-driven photocatalytic degradation of tetracycline hydrochloride in aqueous solutions. The properties of the photocatalysts were evaluated by XRD, FTIR, XPS, Fe-SEM, HR-TEM, TGA, Raman spectroscopy, UV-Vis spectroscopy, zeta potential, and electrochemical measurements. The photocatalytic activity was measured using high-performance liquid chromatography. The photocatalytic properties of the ZFG photocatalyst evaluated against the tetracycline hydrochloride (TCH) antibiotic under visible light irradiation showed superior photodegradation of 96.27% within 60 min at an initial pH of 11. The enhancement of photocatalytic degradation was due to the introduction of functionalized graphene, which increases the light-harvesting capability and molecular adsorption capability in addition to minimizing the recombination rate of photogenerated charge carriers due to its role as an electron acceptor and mediator.

Photocatalytic Characteristics of PbS/ZnO/TiO2 Nanotube Composite (PbS/ZnO/TiO2 나노복합체의 광촉매 특성)

  • Lee, Jong-Ho;Heo, Sujeong;Youn, Jeong-Il;Kim, Young-Jig;Kim, In-Ki;Jang, Kyung-Wook;Oh, Han-Jun
    • Korean Journal of Materials Research
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    • v.27 no.10
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    • pp.569-575
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    • 2017
  • To improve photocatalytic performance, a $PbS/ZnO/TiO_2$ nanotube catalyst was synthesized, and its surface characteristics and photocatalytic efficiency were investigated. The hybrid photocatalysts were produced by anodic oxidation and successive ionic layer adsorption and reaction(SILAR). The photocatalytic efficiency was evaluated using the dye degradation rate. The $PbS/ZnO/TiO_2$ photocatalyst significantly enhanced the photocatalytic activity for dye degradation, which was ascribed to the synergistic effect of their better absorption of solar light and a decrease in the rate of excited electron-hole recombination.

Simulation of amorphous selenium considering diffraction and interference models (간섭과 회절 모델을 고려한 비정질 셀레늄(a-Se) 시뮬레이션)

  • Kim, Si-hyung;Song, Kwang-soup
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.10a
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    • pp.997-999
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    • 2012
  • Digital X-ray image detector is widely used for radiodiagnosis. Amorphous selenium has been received attention as one of the major material that confirmed photoconductor of direct methode detector. We analysis the photocurrent using 2-dimensional device simulator when blue-ray (${\lambda}=486nm$) is irradiated and high voltage is biased. We evaluate electron-hole generation rate, electron-hole recombination rate, and electron/hole distribution in the amorphous selenium. This simulation methode is helpful to the analysis of digital X-ray image detector. We expect that many applications will be developed in digital X-ray image detector using 2-dimensional device simulator.

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