Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1993.07b
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- Pages.1253-1255
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- 1993
A Study on the modelling of DI Switching Device by FEM
DI 스위칭 소자의 Turn on 특성에 관한 연구
- Lee, Kye-Hun (Dept. of Electrical Engineering, Korea University) ;
- Kang, Ho-Cheol (Dept. of Electrical Engineering, Korea University) ;
- Sung, Man-Young (Dept. of Electrical Engineering, Korea University) ;
- Lee, Hyun-Seok (SAMSUNG Electronics Co)
- Published : 1993.07.18
Abstract
Double Injection(DI) switching devices consist of p+ and n+ contact separated by a nearly intrinsic semiconductor region containing deep trap. The FEM is chosen as a simulation method for DI switching device, because of the advantage in local mesh refinement and computer memory comparing with other methods. And Scharfetter-Gummel(S-G) scheme is applied, with which an accurate-seven point Gaussian Quadrature rule is combined. The existance of deed trap requires the modification of conventional equation set. So recombination rate equation is modified and a new equation is included in the equation set which conventionally consists of Poisson equation and current continuity equations.
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