• The Plant Pathology Journal
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• 제25권4호
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• pp.417-421
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• 2009

The analysis of the full length genome of Korean isolates of Pepper mottle virus (PepMoV) in previous study showed molecular variations and are found to be related to symptom variation and pathogenicity (Kim et al., 2009, Virus Res. 144:83-88). To fully understand the molecular variation of PepMoV in Korea, we further assessed the role of RNA recombination to biological variation and evolution of PepMoV. Full-length genome of a total of 17 Korean-PepMoV and 2 American (CA and FL) isolates were examined for possible detection of genetic recombination using different recombination detections programs and detected 5 and 8 tentative recombination events using RDP3 and Splits Tree4 programs, respectively. Interestingly, tentative recombinants detected such as isolates 57, 134 and 217 were previously identified as severe isolates and 205135 and 205136 as differentiating isolates (Kim et al., 2009, Virus Res. 144:83-88). In addition, recombination was frequently detected in the Vb isolate, the first PepMoV isolate reported in Korea, suggesting significant involvement in the evolution of PepMoV in Korea. These initial results of our recombination analyses among PepMoV isolates in Korea may serve as clues to further investigate the biological variations and evolution of PepMoV brought about by recombination.

• 한국의학물리학회지:의학물리
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• 제31권4호
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• pp.145-152
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• 2020

Purpose: In ionization-chamber dosimetry for high-dose-rate electron beams-above 20 mGy/pulse-the ion-recombination correction methods recommended by the International Atomic Energy Agency (IAEA) and the American Association of Physicists in Medicine (AAPM) are not appropriate, because they overestimate the correction factor. In this study, we suggest a practical ion-recombination correction method, based on Boag's improved model, and apply it to reference dosimetry for electron beams of about 100 mGy/pulse generated from an electron linear accelerator (LINAC). Methods: This study employed a theoretical model of the ion-collection efficiency developed by Boag and physical parameters used by Laitano et al. We recalculated the ion-recombination correction factors using two-voltage analysis and obtained an empirical fitting formula to represent the results. Next, we compared the calculated correction factors with published results for the same calculation conditions. Additionally, we performed dosimetry for electron beams from a 6 MeV electron LINAC using an Advanced Markus^® ionization chamber to determine the reference dose in water at the source-to-surface distance (SSD)=100 cm, using the correction factors obtained in this study. Results: The values of the correction factors obtained in this work are in good agreement with the published data. The measured dose-per-pulse for electron beams at the depth of maximum dose for SSD=100 cm was 115 mGy/pulse, with a standard uncertainty of 2.4%. In contrast, the k_s values determined using the IAEA and AAPM methods are, respectively, 8.9% and 8.2% higher than our results. Conclusions: The new method based on Boag's improved model provides a practical method of determining the ion-recombination correction factors for high dose-per-pulse radiation beams up to about 120 mGy/pulse. This method can be applied to electron beams with even higher dose-per-pulse, subject to independent verification.

• Bulletin of the Korean Chemical Society
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• 제31권11호
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• pp.3093-3098
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• 2010

The core-shell $SnO_2$@AO (A=Ni, Cu, Zn and Mg) films were prepared and the effects of coatings on photovoltaic properties were investigated. Studies on X-ray photoelectron spectroscopy, energy dispersive X-ray analysis and transmission electron microscopy showed the formation of divalent oxides on the surface of $SnO_2$ nanoparticles. It was commonly observed that all the dye-sensitized core-shell films exhibited higher photovoltage than the bare $SnO_2$ film. Transient photovoltage measurements confirmed that the improved photovoltages were related to the decreased time constants for electron recombination.

• Journal of Mechanical Science and Technology
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• 제20권8호
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• pp.1292-1301
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• 2006

This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results, it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated. For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser irradiation.

• 대한방사선방어학회:학술대회논문집
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• 대한방사선방어학회 2009년도 춘계 학술발표
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• pp.114-115
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• 2009

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• Journal of Microbiology and Biotechnology
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• 제27권12호
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• pp.2221-2227
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• 2017

Echovirus serotype 30 (ECHO30) has been responsible for several recent worldwide outbreaks of viral meningitis. In Zhejiang Province, China, ECHO30 has been one of the main causes of viral meningitis for years. This study, using phylogenetic analysis of the VP1 gene, was performed to investigate the general molecular epidemiology and genetic patterns of ECHO30 circulating in Zhejiang Province between the years 2002 and 2015. The nucleotide sequences of ECHO30 VP1 showed that they were 64.8% identical with the prototype strain, Bastianni, while the amino acids were 84.9% identical. Phylogenetic analyses showed that ECHO30 in the Zhejiang area has diverged into two genotypes. Genotype I consists of strains isolated since 2002, whereas genotype II includes strains that were mainly isolated during the 2002 to 2004 outbreak. ECHO30 has been endemically circulating in both humans and the environment for a long period of time. Additionally, we evaluated the significance of recombination presented during the years 2005 to 2007 to demonstrate that recombination plays an important role in the prevalence of ECHO30 in the Zhejiang area.

• 대한기계학회논문집B
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• 제41권10호
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• pp.639-647
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• 2017

Solid SCR에 사용 가능한 암모니아 저장물질의 하나인 암모니움 카바메이트는 열 분해시 이산화탄소 가스와 암모니아 가스를 생성하며, 분해 온도인 $60^{\circ}C$ 이하에서 암모니움 염으로 재결합되는 단점이 있다. 이러한 재결합 현상을 극복하기 위하여, 희석기체인 압축공기를 이용하여 기초가시화 실험을 수행하였다. 또한, 재결합 현상을 계량화하기 위하여, 재결합 물질의 무게변화를 측정하기 위한 간단한 장치를 만들어 자동차환경에서 사용되는 SUS재질의 3가지 관경에 크기에 대한 상관관계를 검토하였다. 아크릴 튜브로 제작된 온도조절이 가능한 가시화 실험장치에, 암모니아 가스, 이산화탄소 가스, 희석기 체인 질소 가스를 공급하며, 재결합 방지를 위한 온도, 압력, 희석유량과의 관계를 고찰하고, Chapman-Enskog Theory에서 파생된 Diffusivity를 사용하여 재결합 조건을 유추할 수 있는 지표로 사용하고자 한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.471.2-471.2
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• 2014

We demonstrate here that an improvement in precursor film density (green density) leads to a great enhancement in the photovoltaic performance of CuInSe2 (CISe) thin film solar cells fabricated with Cu-In nanoparticle precursor films via chemical solution deposition. A cold-isostatic pressing (CIP) technique was applied to uniformly compress the precursor film over the entire surface (measuring 3~4 cm2) and was found to increase its relative density (particle packing density) by ca. 20%, which resulted in an appreciable improvement in the microstructural features of the sintered CISe film in terms of lower porosity, reduced grain boundaries, and a more uniform surface morphology. The low-bandgap (Eg=1.0 eV) CISe PV devices with the CIP-treated film exhibited greatly enhanced open-circuit voltage (VOC, from 0.265 V to 0.413 V) and fill factor (FF, from 0.34 to 0.55), as compared to the control devices. As a consequence, an almost 3-fold increase in the average power conversion efficiency, 3.0 to 8.2% (with the highest value of 9.02%), was realized without an anti-reflection coating. A diode analysis revealed that the enhanced VOC and FF were essentially attributed to the reduced reverse saturation current density (j0) and diode ideality factor (n). This is associated with the suppressed recombination, likely due to the reduction in recombination sites such as grain/air surfaces (pores), inter-granular interfaces, and defective CISe/CdS junctions in the CIP-treated device. From the temperature dependences of VOC, it was confirmed that the CIP-treated devices suffer less from interface recombination.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.282-283
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• 2006

The transport phenomena of arsenic (As) doped amorphous selenium(a-Se:As) thin film for digital X-ray conversion material has been reported. The effect of As addition on the carrier mobility and recombination lifetime in a-Se:As sample has been measured using the moving photo-carrier grating (MPG) technique. An Increase in hole mobility and recombination was observed when 0.3% arsenic, was added into a-Se sample, whereas electron mobility decrease with arsenic addition due to the defect density. The fabricated a-Se:03% As device exhibited the highest X-ray sensitivity.

• Journal of Electrochemical Science and Technology
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• 제2권2호
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• pp.68-75
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• 2011

In this review, we have investigated the effect of $TiO_2$-based blocking layers (t-BLs), deposited on a transparent conductive oxide (TCO)-coated glass substrate, on the photovoltaic performance of dye-sensitized solar cells (DSSCs). The t-BL was deposited using spin-coating or sputtering technique, and its thicknesses were varied to study the influence of the thin $TiO_2$ layer in between transparent conducting glass and nanocrystalline $TiO_2$ (nc-$TiO_2$). The DSSC with the t-BL showed the improved adhesion and the suppressed charge recombination at a TCO glass substrate than those without the t-BL, which led to the higher conversion efficiency.