• Title/Summary/Keyword: Recombination Center

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Effects of Recombination on the Pathogenicity and Evolution of Pepper mottle virus

  • Jonson, Miranda Gilda;Seo, Jang-Kyun;Cho, Hong-Soo;Kim, Jeong-Soo;Kim, Kook-Hyung
    • The Plant Pathology Journal
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    • v.25 no.4
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    • pp.417-421
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    • 2009
  • The analysis of the full length genome of Korean isolates of Pepper mottle virus (PepMoV) in previous study showed molecular variations and are found to be related to symptom variation and pathogenicity (Kim et al., 2009, Virus Res. 144:83-88). To fully understand the molecular variation of PepMoV in Korea, we further assessed the role of RNA recombination to biological variation and evolution of PepMoV. Full-length genome of a total of 17 Korean-PepMoV and 2 American (CA and FL) isolates were examined for possible detection of genetic recombination using different recombination detections programs and detected 5 and 8 tentative recombination events using RDP3 and Splits Tree4 programs, respectively. Interestingly, tentative recombinants detected such as isolates 57, 134 and 217 were previously identified as severe isolates and 205135 and 205136 as differentiating isolates (Kim et al., 2009, Virus Res. 144:83-88). In addition, recombination was frequently detected in the Vb isolate, the first PepMoV isolate reported in Korea, suggesting significant involvement in the evolution of PepMoV in Korea. These initial results of our recombination analyses among PepMoV isolates in Korea may serve as clues to further investigate the biological variations and evolution of PepMoV brought about by recombination.

High-Dose-Rate Electron-Beam Dosimetry Using an Advanced Markus Chamber with Improved Ion-Recombination Corrections

  • Jeong, Dong Hyeok;Lee, Manwoo;Lim, Heuijin;Kang, Sang Koo;Jang, Kyoung Won
    • Progress in Medical Physics
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    • v.31 no.4
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    • pp.145-152
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    • 2020
  • Purpose: In ionization-chamber dosimetry for high-dose-rate electron beams-above 20 mGy/pulse-the ion-recombination correction methods recommended by the International Atomic Energy Agency (IAEA) and the American Association of Physicists in Medicine (AAPM) are not appropriate, because they overestimate the correction factor. In this study, we suggest a practical ion-recombination correction method, based on Boag's improved model, and apply it to reference dosimetry for electron beams of about 100 mGy/pulse generated from an electron linear accelerator (LINAC). Methods: This study employed a theoretical model of the ion-collection efficiency developed by Boag and physical parameters used by Laitano et al. We recalculated the ion-recombination correction factors using two-voltage analysis and obtained an empirical fitting formula to represent the results. Next, we compared the calculated correction factors with published results for the same calculation conditions. Additionally, we performed dosimetry for electron beams from a 6 MeV electron LINAC using an Advanced Markus® ionization chamber to determine the reference dose in water at the source-to-surface distance (SSD)=100 cm, using the correction factors obtained in this study. Results: The values of the correction factors obtained in this work are in good agreement with the published data. The measured dose-per-pulse for electron beams at the depth of maximum dose for SSD=100 cm was 115 mGy/pulse, with a standard uncertainty of 2.4%. In contrast, the ks values determined using the IAEA and AAPM methods are, respectively, 8.9% and 8.2% higher than our results. Conclusions: The new method based on Boag's improved model provides a practical method of determining the ion-recombination correction factors for high dose-per-pulse radiation beams up to about 120 mGy/pulse. This method can be applied to electron beams with even higher dose-per-pulse, subject to independent verification.

Suppression of Charge Recombination Rate in Nanocrystalline SnO2 by Thin Coatings of Divalent Oxides in Dye-Sensitized Solar Cells

  • Lee, Chae-Hyeon;Lee, Gi-Won;Kang, Wee-Kyung;Lee, Doh-Kwon;Ko, Min-Jae;Kim, Kyoung-Kon;Park, Nam-Gyu
    • Bulletin of the Korean Chemical Society
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    • v.31 no.11
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    • pp.3093-3098
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    • 2010
  • The core-shell $SnO_2$@AO (A=Ni, Cu, Zn and Mg) films were prepared and the effects of coatings on photovoltaic properties were investigated. Studies on X-ray photoelectron spectroscopy, energy dispersive X-ray analysis and transmission electron microscopy showed the formation of divalent oxides on the surface of $SnO_2$ nanoparticles. It was commonly observed that all the dye-sensitized core-shell films exhibited higher photovoltage than the bare $SnO_2$ film. Transient photovoltage measurements confirmed that the improved photovoltages were related to the decreased time constants for electron recombination.

Three-Temperature Modeling of Carrier-Phonon Interactions in Thin GaAs Film Structures Irradiated by Picosecond Pulse Lasers

  • Lee Seong-Hyuk;Lee Jung-Hee;Kang Kwan-Gu;Lee Joon-Sik
    • Journal of Mechanical Science and Technology
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    • v.20 no.8
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    • pp.1292-1301
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    • 2006
  • This article investigates numerically the carrier-phonon interactions in thin gallium arsenide (GaAs) film structures irradiated by subpicosecond laser pulses to figure out the role of several recombination processes on the energy transport during laser pulses and to examine the effects of laser fluences and pulses on non-equilibrium energy transfer characteristics in thin film structures. The self-consistent hydrodynamic equations derived from the Boltzmann transport equations are established for carriers and two different types of phonons, i.e., acoustic phonons and longitudinal optical (LO) phonons. From the results, it is found that the two-peak structure of carrier temperatures depends mainly on the pulse durations, laser fluences, and nonradiative recombination processes, two different phonons are in nonequilibrium state within such lagging times, and this lagging effect can be neglected for longer pulses. Finally, at the initial stage of laser irradiation, SRH recombination rates increases sufficiently because the abrupt increase in carrier number density no longer permits Auger recombination to be activated. For thin GaAs film structures, it is thus seen that Auger recombination is negligible even at high temperature during laser irradiation.

Molecular Epidemiology and Prevalence of Echovirus 30 in Zhejiang Province, China, from 2002 to 2015

  • Chen, Yin;Sun, Yi;Yan, Juying;Miao, Ziping;Xu, Changping;Zhang, Yanjun;Mao, Haiyan;Gong, Liming
    • Journal of Microbiology and Biotechnology
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    • v.27 no.12
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    • pp.2221-2227
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    • 2017
  • Echovirus serotype 30 (ECHO30) has been responsible for several recent worldwide outbreaks of viral meningitis. In Zhejiang Province, China, ECHO30 has been one of the main causes of viral meningitis for years. This study, using phylogenetic analysis of the VP1 gene, was performed to investigate the general molecular epidemiology and genetic patterns of ECHO30 circulating in Zhejiang Province between the years 2002 and 2015. The nucleotide sequences of ECHO30 VP1 showed that they were 64.8% identical with the prototype strain, Bastianni, while the amino acids were 84.9% identical. Phylogenetic analyses showed that ECHO30 in the Zhejiang area has diverged into two genotypes. Genotype I consists of strains isolated since 2002, whereas genotype II includes strains that were mainly isolated during the 2002 to 2004 outbreak. ECHO30 has been endemically circulating in both humans and the environment for a long period of time. Additionally, we evaluated the significance of recombination presented during the years 2005 to 2007 to demonstrate that recombination plays an important role in the prevalence of ECHO30 in the Zhejiang area.

A Basic Study on Physical Method for Preventing Recombination of Gas Product from the Decomposition of Ammonium Carbamate (암모니움 카바메이트 분해 시 생성된 가스의 재결합 방지를 위한 물리적 방법의 기초연구)

  • Chun, Minwoo;Yoon, Cheon Seog;Kim, Hongsuk
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.41 no.10
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    • pp.639-647
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    • 2017
  • This basic study is focused on the physically removal method of carbon dioxide from the decomposition of ammonium carbarmate to prevent the recombination of ammonium salts. A basic visual experimental set-up was designed and constructed to observe the recombination phenomena from the proper composition of ammonia gas, carbon dioxide gas, and compressed air dilution gas. To quantify the recombination phenomena, a simple device was designed to measure the weight change under severe cases for three different tube sizes. The temperature and pressure in the visual tube and the volumetric flow rates of the nitrogen dilution gas were studied and the conditions to avoid recombination were analyzed according to mean free path theory. Diffusivity values based on the Chapman-Enskog theory were calculated from the experimental data. These value may serve as an index for the prevention of recombination.

Importance of Green Density of Nanoparticle Precursor Film in Microstructural Development and Photovoltaic Properties of CuInSe2 Thin Films

  • Hwang, Yoonjung;Lim, Ye Seul;Lee, Byung-Seok;Park, Young-Il;Lee, Doh-Kwon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.471.2-471.2
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    • 2014
  • We demonstrate here that an improvement in precursor film density (green density) leads to a great enhancement in the photovoltaic performance of CuInSe2 (CISe) thin film solar cells fabricated with Cu-In nanoparticle precursor films via chemical solution deposition. A cold-isostatic pressing (CIP) technique was applied to uniformly compress the precursor film over the entire surface (measuring 3~4 cm2) and was found to increase its relative density (particle packing density) by ca. 20%, which resulted in an appreciable improvement in the microstructural features of the sintered CISe film in terms of lower porosity, reduced grain boundaries, and a more uniform surface morphology. The low-bandgap (Eg=1.0 eV) CISe PV devices with the CIP-treated film exhibited greatly enhanced open-circuit voltage (VOC, from 0.265 V to 0.413 V) and fill factor (FF, from 0.34 to 0.55), as compared to the control devices. As a consequence, an almost 3-fold increase in the average power conversion efficiency, 3.0 to 8.2% (with the highest value of 9.02%), was realized without an anti-reflection coating. A diode analysis revealed that the enhanced VOC and FF were essentially attributed to the reduced reverse saturation current density (j0) and diode ideality factor (n). This is associated with the suppressed recombination, likely due to the reduction in recombination sites such as grain/air surfaces (pores), inter-granular interfaces, and defective CISe/CdS junctions in the CIP-treated device. From the temperature dependences of VOC, it was confirmed that the CIP-treated devices suffer less from interface recombination.

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Transport phenomena of a-Se:As thin film for digital X-ray Conversion Material (디지털 X-선 변환물질을 위한 비소(As) 첨가 비정질 셀레늄(a-Se) 박막의 수송현상)

  • Park, Chang-Hee;Kim, Jae-Hyung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.282-283
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    • 2006
  • The transport phenomena of arsenic (As) doped amorphous selenium(a-Se:As) thin film for digital X-ray conversion material has been reported. The effect of As addition on the carrier mobility and recombination lifetime in a-Se:As sample has been measured using the moving photo-carrier grating (MPG) technique. An Increase in hole mobility and recombination was observed when 0.3% arsenic, was added into a-Se sample, whereas electron mobility decrease with arsenic addition due to the defect density. The fabricated a-Se:03% As device exhibited the highest X-ray sensitivity.

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Blocking Layers Deposited on TCO Substrate and Their Effects on Photovoltaic Properties in Dye-Sensitized Solar Cells

  • Yoo, Beom-Hin;Kim, Kyung-Kon;Lee, Doh-Kwon;Kim, Hong-Gon;Kim, Bong-Soo;Park, Nam-Gyu;Ko, Min-Jae
    • Journal of Electrochemical Science and Technology
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    • v.2 no.2
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    • pp.68-75
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    • 2011
  • In this review, we have investigated the effect of $TiO_2$-based blocking layers (t-BLs), deposited on a transparent conductive oxide (TCO)-coated glass substrate, on the photovoltaic performance of dye-sensitized solar cells (DSSCs). The t-BL was deposited using spin-coating or sputtering technique, and its thicknesses were varied to study the influence of the thin $TiO_2$ layer in between transparent conducting glass and nanocrystalline $TiO_2$ (nc-$TiO_2$). The DSSC with the t-BL showed the improved adhesion and the suppressed charge recombination at a TCO glass substrate than those without the t-BL, which led to the higher conversion efficiency.