• Journal of Microbiology and Biotechnology
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• 제25권5호
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• pp.704-708
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• 2015

For the analysis of multiple-reaction intermediates for long-chain dicarboxylic acid biotransformation, simple and reproducible methods of extraction and derivatization were developed on the basis of gas chromatography with flame ionization detector (GC-FID) instead of mass spectrometry. In the derivatization step, change of the ratio of pyridine to MSTFA from 1:3 to 9:1 resulted in higher peak intensity (p = 0.021) and reproducibility (0.6%CV) when analyzing 32 g/l ricinoleic acid (RA). Extraction of RA and ω-hydroxyundec-9-enoic acid with water containing 100 mM Tween 80 showed 90.4-99.9% relative extraction efficiency and 2-7%CV compared with those with hydrophobic ethyl acetate. In conclusion, reduction of the pyridine content and change of the extraction solvent to water with Tween 80 provided compatible derivatization and extraction methods to GC-FID-based analysis of longchain carboxylic acids.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.7-11
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• 2002

In this study, Au thin films were etched with a $Cl_2/Ar$ gas combination in an in an inductively coupled plasma. The etch properties were measured for different gas mixing ratios of $Cl_2/(Cl_2+Ar)$ while the other process conditions were fixed at rf power (700 W), dc bias voltage (150 V), and chamber pressure (15 mTorr). The highest etch rate of the Au thin film was 3500 $\AA/min$ and the selectivity of Au to $SiO_2$ was 4.38 at a $Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is Au-Cl bonding by chemical reaction between Cl and Au. During the etching of Au thin films in $Cl_2/Ar$ plasma, Au-Cl bond is formed, and these products can be removed by the physical bombardment of Ar ions. In addition, Optical emission spectroscopy (OES) were investigated to analyze radical density of Cl and Ar in plasma. The profile of etched Au investigated with scanning electron microscopy (SEM).

• 한국수소및신에너지학회논문집
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• 제15권2호
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• pp.119-128
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• 2004

DME(Dimethyl Ether) was directly produced from the synthesis gas using the slurry phase reactor. The catalyst for DME production prepared two types (A type; Cu:Zn:Al=57:33:10, B type; Cu:Zn:Al=40:45:15, molar ratio). It was evaluated for the effect of the reaction medium oil using the small size slurry phase reactor. DME production yield and the methanol selectivity decreased in the order: n-hexadecane oil> mineral oil> therminol oil. The long-term test of DME production was carried out using A and B type catalyst, and n-hexadecane oil and mineral oil, respectively. It was confirmed that the use of A type for the catalyst and n-hexadecane for the reaction medium oil was very useful for the viewpoint of the DME production form the synthesis gas.

• Transactions on Electrical and Electronic Materials
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• 제8권6호
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• pp.229-233
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• 2007

In this study, we carried out an investigation of the etching characteristics(etch rate, selectivity) of $HfO_2$ thin films in the $CH_4/Ar$ inductively coupled plasma. It was found that variations of input power and negative dc-bias voltage are investigated by the monotonic changes of the $HfO_2$ etch rate as it generally expected from the corresponding variations of plasma parameters. At the same time, a change in either gas pressure or in gas mixing ratio result in non-monotonic etch rate that reaches a maximum at 2 Pa and for $CH_4(20%)/Ar(80%)$ gas mixture, respectively. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4-containing$ plasmas.

• Transactions on Electrical and Electronic Materials
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• 제15권1호
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• pp.49-54
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• 2014

In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si to $SiO_2$ in $SF_6/O_2$ plasma. The etch rate of the Si film was decreased on adding $O_2$ gas, and the selectivity of Si to $SiO_2$ was increased, on adding $O_2$ gas to the $SF_6$ plasma. The optical condition of the Si film with this work was 1,350 nm/min, at a gas mixing ratio of $SF_6/O_2$ (=130:30 sccm). At the same time, the etch rate was measured as functions of the various etching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Field emission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption of the reaction products.

• 한국표면공학회지
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• 제34권1호
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• pp.10-16
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• 2001

Recently plasma etching research has been focused on the metal surfaces in the nuclear industry. In this study, surface etching reaction of metallic Co and Mo, principal contaminants in the spent nuclear components, in CF$_4$/O$_2$, gas plasma has been experimentally investigated to look into the applicability and the effectiveness of the technique for the surface decontamination. Experimental variables are $CF_4$/$O_2$ ratio and substrate temperature between 29$0^{\circ}C$ and 38$0^{\circ}C$. Experimental results Show that the optimum gas composition is 80%CF$_4$-20%$O_2$ and the metallic Co and Mo are etched out well enough in the temperatures range. Cobalt starts to be etched above $350^{\circ}C$ and the etching rate increases with increasing substrate temperature. Maximum rate achieved at 38$0^{\circ}C$ under 220 W r.f. plasma power is 0.06 $\mu\textrm{m}$/min. On the other hand, the metallic Mo is etched easily even at low temperature and the reaction rate drastically increases as the substrate temperature goes up. Highest rate obtained under the same conditions is $1.9\mu\textrm{m}$/min. OES (Optical Emission Spectroscopy) analysis reveals that the intensities of F atom and CO molecule reach maximum at the optimum gas composition, which demonstrates that the principal reaction mechanism is fluorination and/or carbonyl reaction. It is confirmed, therefore, that dry processing technique using reactive plasma is quite feasible and applicable for the decontamination of surface-contaminated parts or equipments.

• Korean Chemical Engineering Research
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• 제47권2호
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• pp.243-247
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• 2009

본 연구는 수소제조를 위한 에틸렌글리콜 수증기 개질반응에 대한 열역학적 특성 분석을 목적으로 한다. 이를 위하여 온도(300~1,600 K), 반응물 조성비(Steam/Carbon ratio=0.5~4.5), 압력(1~30 기압) 등의 다양한 반응조건을 변화시키면서 열역학적 평형조성 및 효율 등을 조사하였다. 주어진 조건하에서 흡열반응인 개질반응과 발열반응인 수성가스 전환반응 및 메탄화반응간 경쟁특성을 확인하였으며, 반응온도 400 K를 지나면서 수소발생이 관찰되어 500 K를 지나면서 급격한 발생량의 증가를 확인하였다. 반응물 가운데 수증기의 비율을 양론비(S/C=1.0) 이상으로 증가시킬 경우 수성가스 전환반응이 촉진되어 일산화탄소 저감 및 수소발생 증가 거동을 나타내었다. 결과적으로 열역학적 효율감소를 최소화 하면서 수소발생량을 극대화할 수 있는 조건은 반응온도 900 K 이상 및 수증기 대 탄소간 비율이 3.0 이내의 범위에 해당하는 것으로 판단된다.

• Journal of Mechanical Science and Technology
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• 제19권6호
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• pp.1358-1365
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• 2005

Flue gas recirculation (FGR) is widely adopted to control NO emission in combustion systems. Recirculated flue gas decreases flame temperature and reaction rate, resulting in the decrease in thermal NO production. Recently, it has been demonstrated that the recirculated flue gas in fuel stream, that is, the fuel induced recirculation (FIR), could enhance much improved reduction in NO per unit mass of recirculated gas, as compared to conventional FGR in air. In the present study, the effect of dilution methods in air and fuel sides on NO reduction has been investigated numerically by using $N_2$ and $CO_2$ as diluent gases to simulate flue gases. Counterflow diffusion flames were studied in conjunction with the laminar flamelet model of turbulent flames. Results showed that $CO_2$ dilution was more effective in NO reduction because of large temperature drop due to the larger specific heat of $CO_2$ compared to $N_2$. Fuel dilution was more effective in reducing NO emission than air dilution when the same recirculation ratio of dilution gas was used by the increase in the nozzle exit velocity, thereby the stretch rate, with dilution gas added to fuel side.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.303-307
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• 2000

The crystal structure of ZnS fabricated by gas-liquid phase reaction was obtained by XRD and refined by RIETAN near R$_{wp}$ factor 10%. The increasement of HCP phase depended on extra H$_2$S gas and the lattice parameter and crystalline size changed by the relative ratio of multiphase. Using ZnS of the different multiphase ratio and crystalline size, sintered ZnS:Cu, Al green phosphor and the CL property resulted optimum luminescence in the range of 91~94% and 150~190$\AA$, respectably, FCC/HCP ratio and crystalline size. As changing of structure ratio, the reason of different luminescence property is now studying. As well as, after XRD pattern of TiO$_2$powder fitted by RIETAN and the structure factor using MEED method simulated about each atom of (002) plane. Additionally, we proposed RIETAN and MEED were the methods of the study of luminescence mechanism for many phosphor materials.s.

• Korean Chemical Engineering Research
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• 제55권1호
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• pp.99-106
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• 2017

본 연구에서는 인도네시아 저등급 석탄인 Kideco탄을 이용하여 질소 분위기 하에 등온상태에서 촤(char)를 생성한 후 반응가스(스팀,이산화탄소)를 주입하여 합성가스를 생성하는 가스화를 진행하였다. 온도가 반응속도에 미치는 영향을 알아보기 위해 $850^{\circ}C$ 이하의 운전온도(700, 750, 800, $850^{\circ}C$)에서 반응을 진행하였다. 촉매가 미치는 영향을 알아보기 위해 알카리계 촉매인 탄산칼륨과 금속촉매인 니켈을 이용하였으며 두가지 촉매의 혼합비율(1:9, 3:7, 5:5, 7:3, 9:1)을 다르게 하여 연구를 수행하였다. 탄산칼륨은 물리적 혼합을 통해 니켈은 이온교환법을 통해 준비하였다. 기-고체 반응 특성을 알아보기 위해 열중량분석기와 가스크로마토그래피를 통해 얻은 실험결과를 shrinking core model (SCM), volumetric reaction model (VRM), random pore model (RPM) and modified volumetric reaction model (MVRM)에 적용하여 비교하였다.