• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.19-24
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• 2007

The effects of $B_2O_3-SiO_2-R(R;CaO,\;BaO,\;ZnO,\;Bi_2O_3)$ borosilicate glass system on the sintering behavior and microwave dielectric properties of ceramic/glass composites were investigated as functions of modifier, glass addition ($30{\sim}50\;vol%$) and sintering temperature ($500{\sim}900^{\circ}C$ for 2 hrs). The addition of 50 and 45 vol% glass ensured successful sintering below $900^{\circ}C$. Sintering characteristics of the composites were well described in terms of modifier. Borosilicate glass enhanced the reaction with $Al_{2}O_{3}$ to form pores, second phases and liquid phases, which was responsible to component of modifier. Dielectric constant (${\varepsilon}_{r},\;Q{\times}f_{o}$) and temperature coefficient of resonant frequency (${\tau}_{f}$) of the composite with 50 and 45 vol% glass contents($B_{2}O_{3}:SiO_{2}:R=25:10:65$) demonstrated A-CaBS(7.8, 2,560 GHz, -81ppm/$^{\circ}C$), A-BaBs(5.8, 3.130 GHz, -64 ppm/$^{\circ}C$), A-ZnBS(5.7, 17,800 GHz, -21 ppm/$^{\circ}C$), A-BiBs(45 vol% glass in total)(8.3, 2,700 GHz, -45 ppm/$^{\circ}C$) which is applicable to substrate requiring an low dielectric properties.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1588-1598
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• 1994

The SiC/MoSi2 composite materials were fabricated by infiltrating the mixture of molybdenum disilicide and metal silicon(MoSi2+Si=100) to a porous compact of silicon carbide and graphite under the vacuum atmosphere of 10-1 torr. The specimen were oxidized in dry air under 1 atm at 130$0^{\circ}C$~150$0^{\circ}C$ for 240 hours. The oxidation behavior was evaluated by the weight gain and loss per unit area of the oxidized samples. Also, SEM and XRD analysis of the oxidized surface of the samples were carried out. With increasing the MoSi2 content and oxidation temperature, the passive oxidation was found. The trend of weight gain of all samples was followed the parabolic rate law with the formation of a protective layer of cristobalite on the surface.

• Journal of Powder Materials
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• v.21 no.6
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• pp.467-472
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• 2014

RBSC (reaction-bonded silicon carbide) represents a family of composite ceramics processed by infiltrating with molten silicon into a skeleton of SiC particles and carbon in order to fabricate a fully dense body of silicon carbide. RBSC has been commercially used and widely studied for many years, because of its advantages, such as relatively low temperature for fabrication and easier to form components with near-net-shape and high relative density, compared with other sintering methods. In this study, RBSC was fabricated with different size of SiC in the raw material. Microstructure, thermal and mechanical properties were characterized with the reaction-sintered samples in order to examine the effect of SiC size on the thermal and mechanical properties of RBSC ceramics. Especially, phase volume fraction of each component phase, such as Si, SiC, and C, was evaluated by using an image analyzer. The relationship between microstructures and physical properties was also discussed.

• Journal of the Korean Ceramic Society
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• v.30 no.8
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• pp.657-663
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• 1993

BaTiO3 sputtering targets of 3 inch diameter were prepared by sintering the CIP (Cold Isotatic Pressing) compacts at 136$0^{\circ}C$ for 3hrs. The apparent density and grain size were 97% and 30${\mu}{\textrm}{m}$, respectively. After BaTiO3 films were deposited on Si and Pt/Ti/SiO2/Si substrates using these targets, films were annealed at various conditions and the crystallization behavior, reaction with the substrate and the electrical properties were investigated. The films on both substrates required 5~20hrs furnace annealing for crystallization at the temperatures from $600^{\circ}C$ to 80$0^{\circ}C$. For the films on Si substrate, interaction between the film and the substrate was suppressed upt o $700^{\circ}C$ for 10 hrs and the relative dielectric constant was 30. As the annelaing temperature and time were increased, the relative dielectric constants of the films decreased due to the formation of silicate phases through the reaction with the substrate. For the BaTiO3 films on Pt/Ti/SiO2/Si substrate, the reaction with the substrate was further reduced when the annealing condition was identical to that for Si substrate, but the reaction between the layers in Pt electrode took place above $700^{\circ}C$. When the films were annealed at $600^{\circ}C$ where the stability of Pt electrode was sustained, relative dielectric constant was increased to 110 since the reaction with substrate was effectively reduced even for a longer annealing time and the crystallization was enhanced.

• Journal of Powder Materials
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• v.16 no.6
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• pp.442-448
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• 2009

$ZrB_2$-based composites are candidate materials for ultra-high temperature materials (UHTMs). $ZrB_2$ has become an indispensable ingredient in UHTMs, due to its high melting temperature, relatively low density, and excellent resistance to thermal shock or oxidation. $ZrB_2$ powders are usually synthesized by solid state reactions such as carbothermal, borothermal, or combined carbothermal reaction. SiC is added to this system in order to enhance the oxidation resistance of $ZrB_2$. In this study, $ZrB_2$?based composites were successfully synthesized and densified through two different processing paths. $ZrB_2$ or $ZrB_2$ 25 vol.%SiC was fully synthesized from oxide starting materials with reducing agents after heat treatment at 1400$^{\circ}C$. Besides, $ZrB_2$?20 vol.%SiC was fully densified with $B_4C$ as a sintering additive after hot pressing at 1900$^{\circ}C$. The synthesis mechanism and the effect of sintering additives on densification of $ZrB_2$ ?SiC composites were also discussed.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.396-400
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• 2003

A new synthesis process for nano laminating Ti$_3$SiC$_2$ has been developed using TiCx (x=0.67) and Si powder as starting materials by a reaction hot pressing. Bulk Ti$_3$SiC$_2$ was fabricated using a green body consisting of TiCx and Si by a hot pressing under the pressures of 25 MPa at 1420-1550 $^{\circ}C$ for 90 min. The synthesized Ti$_3$SiC$_2$ was consisting of only TiCx and Ti$_3$SiC$_2$. The relative density of sintered bulk Ti$_3$SiC$_2$ was increased as the hot pressing temperature was increased, which was mainly due to the increase in TiCx contents in synthesized Ti$_3$SiC$_2$. The synthesized Ti$_3$SiC$_2$ bulk was consisted of nano sized lamella structure of 20-100 nm in thickness. It was found that TiCx particles in Ti$_3$SiC$_2$ would increase the 3-point bending strength of synthesized Ti$_3$SiC$_2$ bulk. The maximum 3-P. bending strength of synthesized Ti$_3$SiC$_2$ bulk was more than 800 MPa. The Vickers hardness of synthesized Ti$_3$SiC$_2$bulk was as low as 5 Gpa, which was decreased with the indentation load. The quasi-plastic deformation behaviors were observed around indentation mark on Ti$_3$SiC$_2$.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.630-634
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• 1999

Porous mullites were fabricated using $Al(OH)_3$ and amorphous $SiO_2$ as starting materials by reaction sintering method. The molar ratios of alumina and silica varied from stoichiometric mullite composition to silica-rich and alumina-rich compositions. $AlF_3$ of 0, 1, 5, 10 wt% wad added to each composition, and the effects of composition and the additive for the formation of mullite were examined. The temperature of mullite formation decreased as the amount of $AlF_3$ increased, and themullite phase was formed in the stoichiometric composition in addition of 5 wt% $AlF_3$ at $1250^{\circ}C$ and porous whiskered mullite were synthesized in the sample sintered at $1300^{\circ}C$ and higher temperature. The effect of temperature on the mullite formation was not observed for the sample with 5 wt% or higher content of $AlF_3$, and the body showed little contraction after sintering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.314-314
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• 2008

The low temperature sintering and the dielectric properties of $Al_2O_3/SiO_2$-zinc borosilicate glass composites were investigated in the view of the application for LTCC. When the sintering was conducted at $900^{\circ}C$ $ZnAl_2O_4$ and $ZnB_2O_4$ compounds formed at the $Al_2O_3$-rich and the $SiO_2$-rich compositions, respectively. The reaction between ZBS glass and $Al_2O_3/SiO_2$ caused the formation of these compounds. The $Al_2O_3/SiO_2$ ratio affected the dielectric properties. The excellent dielectric properties, i.e., Q$\times$f value= 40,000 GHz and ${\varepsilon}_r$=4.5, were obtained in the $Al_2O_3/SiO_2$-ZBS glass system and fabricated the LTCC substrate materials.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.610-614
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• 2016

Tyranno SA (SiC-polycrystalline fiber, Ube Industries Ltd.) shows excellent heat-resistance up to $2000^{\circ}C$ with relatively high mechanical strength. This fiber is produced by the conversion process from a raw material (amorphous Si-Al-C-O fiber) into SiC-polycrystalline fiber at very high temperatures over $1500^{\circ}C$ in argon. In this conversion process, the degradation reaction of the amorphous Si-Al-C-O fiber accompanied by a release of CO gas for obtaining a stoichiometric composition and the subsequent sintering of the degraded fiber proceed. Furthermore, vaporization of gaseous SiO, phase transformation and active diffusion of the components of the Si-Al-C-O fiber competitively occur. Of these changes, vaporization of the gaseous SiO during the conversion process results in an abnormal SiC-grain growth and also leads to the non-stoichiometric composition. However, using a modified Si-Al-C-O fiber with an oxygen-rich surface, vaporization of the gaseous SiO was effectively prevented, and then consequently a nearly stoichiometric SiC composition could be obtained.

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.478-483
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• 2009

Thermal shock and hot corrosion resistance of silicon nitride ceramics are investigated in this study. Silicon nitrides are fabricated by nitride pressureless sintering (NPS) process, which process is the continuous process of nitridation reaction of Si metal combined with subsequent pressureless sintering. The results of thermal shock test show it sustains 400MPa of initial strength during test in the designated condition of ${\Delta}T=700{\sim}25^{\circ}C$ up to maximum 4,800 cycles. Hot corrosion tests also reveal that the strength degradation of NPS silicon nitride did not occur at $700^{\circ}C$ with an exposure in Ar, $H_2$, Na and K for 1,275 h.