• Journal of Advanced Marine Engineering and Technology
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• 제19권2호
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• pp.20-26
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• 1995

The very rapid cooling problem from $820^{\circ}$C to $20^{\circ}$C on the surface of the steel by thermal conduction including the latent heat of phase transformation of steel and by transient boiling heat transfer of water are considered to principal problem in quenching. The transient boiling process of water at the surface of specimen during the quenching process were experimentally analyzed. Then the heat flux was numerically calculated by the numerical method of inverse heat condition problem. In this report, the simulation program to calculate the cooling curves for large rolls was made using the subcooled transient boiling curve as a boundary condition. By this simulation program, the cooling curves of rolls from D=50mm to D=200mm were calculated and the effects of agitation of circulation of water also investigated.

• 한국전기전자재료학회논문지
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• 제16권10호
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• pp.859-864
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• 2003

We prepared SOI(silicon-on-insulator) wafer pairs of Si II SiO$_2$/Si$_3$N$_4$ II Si using wafer direct bonding with an electric furnace annealing(EFA), a fast linear annealing(FLA), and a rapid thermal annealing(RTA), respectively, by varying the annealing temperatures at a given annealing process. We measured the bonding area and the bonding strength with processes. EFA and FLA showed almost identical bonding area and theoretical bonding strength at the elevated temperature. RTA was not bonded at all due to warpage, We report that FLA process was superior to other annealing processes in aspects of surface temperature, annealing time, and bonding strength.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.328-331
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• 1988

Sealed Interface Local Oxidation (SILO) technology has been investigated using a nitride/oxide/nitride three-layered sandwich structure. P-type silicon substrate was either nitrided by rapid thermal processing, or silicon nitride was deposited by LPCVD method. A three-layered sandwich structure was patterned either by reactive ion etch (RIE) mode or by plasma mode. Sacrificial oxidation conditions were also varied. Physical characterization such as cross-section analysis of field oxide, and electrical characterization such as gate oxide integrity, junction leakage and transistor behavior were carried out. It was found that bird's beak was nearly zero or below 0.1um, and the junction leakages in plasma mode were low compared to devices of the same geometry patterned in RIE mode, and gate oxide integrity and transistor behavior were comparable. Conclusively, SILO process is compatible with conventional local oxidation process.

• 한국분말재료학회지
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• 제13권1호
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• pp.57-61
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• 2006

The present work illustrates the use of water-soluble cupric salts as ingredients of binder for injection molding of $W-10 wt\%$ Cu. Parts produced are dense, homogeneous and have good surface finish, compared to those produced using conventional binder system. This new binder system provides also process-simplification benefit. $CuCl_2\;and\;Cu(NO_3)_2$ with the purity of $98\%$ was selected for this study. Rapid sintering process involving thermal decomposing was successful in densification for 1h. Final density that is about $93\%$ of theoretical value could be obtained, and are distinguishable from conventionally processed W-Cu composites.

• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.62-68
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• 1999

Ferroelectric $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$(x=0, 0.1, 0.2, 0.3) thin films were deposited on $Pt/SiO_2/Si$ substrate by MOD(Metalorganic Decomposition) process. Metal carboxylate and metal alkoxide were used as precursors, and 2-methoxyethanol, xylene as solvents. After spin coating, thin films were pre-annealed at $400^{\circ}C$, followed by RTA(Rapid Thermal Annealing) and final annealing at $800^{\circ}C$ in oxygen atmosphere. These procedures were repeated three times to obtain thin films with the thickness of $2000{\AA}$. To enhance the nucleation and growth of layered-perovskite phase, thin films were rapid-thermally annealed above $720^{\circ}C$ in oxygen atmosphere. As RTA temperature increased, fluorite phase was transformed to layered-perovskite phase. And the change of Nb contents affected dielectric / electrical properties and microstructure. The ferroelectric characteristics of $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$ thin film were Pr=8.67 $\mu{C}/cm^2$, Ec=62.4kV/cm and $I_{L}=1.4\times10^{-7}A/cm^2$ at the applied voltage of 5V, respectively.

• Asian Journal of Atmospheric Environment
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• 제9권3호
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• pp.228-235
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• 2015

In order to clarify the thermal and hygroscopic properties of indoor particulate matter (PM) in a semiclosed subway space, which is critically important for understanding of the distinctive particle formation processes as well as the assessment of their health effects, the size-resolved PMs (i.e., $PM_{2.5}$ and $PM_{10-2.5}$) were intensively collected on the platform of Miasageori station on the Seoul Subway Line-4. The elemental concentrations in soluble and insoluble fractions were determined by PIXE from the bulkily pretreated $PM_{2.5}$. The thermal and hygroscopic characteristics of individual particles were investigated via a combination of the unique pretreatment techniques (i.e., the high-temperature rapid thermal process and the water dialysis) and SEM-EDX analysis. Iron and calcium were unequaled in insoluble and soluble $PM_{2.5}$ fractions, respectively, with overwhelming concentration. The SEM-EDX's elemental net-counts for the pre- and post-pyrolyzed PMs newly suggest that magnesium and several elements (i.e., silica, aluminum, and calcium) may be readily involved in the newly generated subway fine PM by a high-temperature thermal processing when trains are breaking and starting. Through the water dialysis technique, it turned out that calcium has meaningful amount of water soluble fraction. Furthermore, the concentrations of the counter-ions associated with the calcium in subway $PM_{10-2.5}$ were theoretically estimated.

• 센서학회지
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• 제17권4호
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• pp.250-255
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• 2008

A vanadium pentoxide ($V_2O_5$)-based bolometric infrared (IR) sensor has been designed and fabricated using micro electro mechanical systems (MEMS) technology for glucose detection and its resistive characteristics has been illustrated. The proposed bolometric infrared sensor is composed of the vanadium pentoxide array that shows superior temperature coefficient of resistance (TCR) and standard silicon micromachining compatibility. In order to achieve the best performance, deposited $V_2O_5$ thin film is optimized by adequate rapid thermal annealing (RTA) process. Annealed vanadium oxide thin film has demonstrated a linear characteristic and relatively high TCR value (${-4}%/^{\circ}C$). The resistance of vanadium oxide is changed by IR intensity based on glucose concentration.

• 한국터널지하공간학회 논문집
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• 제18권5호
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• pp.401-412
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• 2016

고수압 조건의 해저터널 공사에 기존의 그라우팅 공법은 제한을 받게 되어 굴착작업이 어려울 수 있으나, 인공동결공법을 적용할 경우 신속한 차수 및 지반보강 효과를 얻을 수 있다. 인공동결공법을 적용할 경우, 동결 조건에 따라 동결토의 거동이 크게 변화하므로 기존의 연구 사례를 바탕으로 해저지반 등 특수한 조건에서 동결토의 역학적 거동을 예측하는 것에는 한계가 있다. 또한, 인공동결공법의 설계를 위해서는 동결체 형성에 필요한 소요시간 및 동결범위를 산정해야 하며, 해저지반의 경우 간극수 내 염분의 영향을 반영해야 한다. 본 논문에서는 동결토의 열적 특성을 파악하기 위해 인조규사 시료에 대한 실내 열전도도 측정시험과 동결챔버시험을 수행하였다. 동결토와 비동결 포화토 간극수의 염도를 조절하여 동결 과정과 염분에 따른 유효 열전도도를 비정상 열선법을 적용하여 측정하였다. 인조규사 간극수의 염도에 의한 동결특성 변화를 파악하기 위해 동결챔버를 설계 및 제작하였고 이를 통하여 동결 조건을 변화시키며 동결챔버시험을 수행하였다. 동결 조건에 따른 시료내 온도 변화를 분석하고 이를 통해 동결 조건이 사질토의 열전달 특성에 미치는 영향을 평가하였다. 비동결 포화토의 경우는 간극수가 담수(염도 0%)인 조건과 염수(염도 3.5%)인 조건 모두 유효 열전도도가 유사하게 평가되었으나, 동결토의 경우는 간극수가 염수인 조건이 보다 큰 유효 열전도도를 보였다. 이는 동결챔버시험에서 간극수가 염수인 조건이 담수인 조건보다 동결속도가 더 빠른 결과와 일치한다.

• 한국산학기술학회논문지
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• 제7권5호
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• pp.811-816
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• 2006

이방성 자기저항효과(anisotropic magnetoresistance : AMR)는 단층 자성박막으로 구성되므로 경제성 있게 박막화 시켜서 소형화가 가능하다. 기존의 급속응고법으로 생산된 리본형 MCo(M=Cu, Ag) 소자가 경제적으로 공업적 목적을 달성하였으나, 리본형 특유의 두께와 가공성이 부족하여 소형 소자에 함께 집적하기 곤란한 단점이 있었다. 새로운 박막형을 쓰면 추가 열처리 없이 기존의 리본형 소자와 비교하여 박막상태로 적절한 AMR 특성이 나오는지와 최적 AMR을 얻기 위한 Co의 조성을 아는 것이 중요하다. 열증착기를 써서 100nm의 $Cu_{1-x}Co_x$와 $Ag_{1-x}$ 박막을 Co의 조성을 $10{\sim}70wt%$로 달리하며 제작하여 이때의 자기적 특성을 확인하였다. CuCo는 40% Co에 0.5T에서 1.4%, AgCo는 30% Co에 2.6%의 MR비를 얻었고 이는 리본형 소자보다는 표면 산란 효과에 의해 MR비는 작지만 표면산화막 없이 직접 다른 소자공정과 함께 진행할 수 있는 장점이 있음을 확인하였다.

• 대한전자공학회논문지SD
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• 제38권5호
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• pp.375-381
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• 2001

디바이스의 크기가 0.25㎛이하로 축소됨에 따라 DRAM(Dynamic Random Access Memory) 제조업체들은 칩 크기를 줄이고 지역적인 배선으로 사용하기 위해서 기존의 텅스텐-폴리사이드 비트-선에서 텅스텐 비트-선으로 대체하고 있다. 본 논문에서는 다양한 RTP 온도와 추가 이온주입을 사용하여 낮은 저항을 갖는 텅스텐 비트-선 제조 공정에 대해 다루었다. 그 결과 텅스텐 비트선 저항에 중요한 메계변수는 RTP Anneal 온도와 BF₂ 이온 주입 도펀트임을 알 수 있었다. 이러한 텅스텐 비트-선 공정은 고밀도 칩 구현에 중요한 기술이 된다.