• 대한기계학회논문집B
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• 제34권12호
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• pp.1035-1042
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• 2010

HCCI 엔진연소에서 열적성층화 효과는 노킹을 회피하는 수단으로서 생각되고 있다. 본 연구에서는 DME 와 n-Butane 을 연료로 하는 HCCI 엔진연소의 열적성층화 효과를 조사하였다. 예혼합기가 연소실내부에 투입되고 부력의 효과를 이용하여 연소실 내부에 열적성층화를 형성한다. 그 뒤에 피스톤의 압축에 의해서 단열압축 시킨 후 연소실압력과 2 차원화학발광법을 계측하여 해석하였다. 열적성층화가 존재하는 경우에는, 저온산화반응과 고온산화반응의 시작시기가 균질한 경우에 비해서 진각되었고 연소기간은 길어졌다. 발광의 시작은 온도가 높은 곳에서부터 시작하여 온도가 낮은 곳으로 전파 되는 것을 확인하였고 발광기간도 길어짐을 확인하였다.

• Applied Science and Convergence Technology
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• 제25권3호
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• pp.56-60
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• 2016

The ALD process is an adequate technique to meet the requirements that come with the downscaling of semiconductor devices. To obtain thin films of the desired standard, it is essential to understand the thermal decomposition properties of the precursors. As such, this study examined the thermal decomposition properties of TEMAHf precursors and its effect on the formation of $HfO_2$ thin films. FT-IR experiments were performed before deposition in order to analyze the thermal decomposition properties of the precursors. The measurements were taken in the range of $135^{\circ}C-350^{\circ}C$. At temperatures higher than $300^{\circ}C$, there was a rapid decrease in the absorption peaks arising from vibration of $Sp^3$ C-H stretching. This showed that the precursors experienced rapid decomposition at around $275^{\circ}C-300^{\circ}C$. $HfO_2$ thin films were successfully deposited by Atomic Layer Deposition (ALD) at $50^{\circ}C$ intervals between $150^{\circ}C$ to $400^{\circ}C$; the deposited films were characterized using a reflectometer, X-ray photoelectron spectroscopy (XPS), Grazing Incidence X-ray Diffraction (GIXRD), and atomic force microscopy (AFM). The results illustrate the relationship between the thermal decomposition temperature of TEMAHf and properties of thin films.

• 한국세라믹학회지
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• 제28권1호
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• pp.11-18
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• 1991

A precipitation method, one of the most effective liquid phase reaction methods, was adopted in order to prepare high-tech Al2O3/ZrO2 composite ceramics, and the effects of stress-induced phase transformation of ZrO2 on thermal shock behavior of Al2O3-ZrO2 ceramics were investigated. Al2(SO4)3.18H2O, ZrOCl2.8H2O and YCl3.6H2O were used as starting materials and NH4OH as a precipitation agent. Metal hydroxides were obtained by single precipitation(process A) and co-precipitation(process B) method at the condition of pH=7, and the composition of Al2O3-ZrO2 composites was fixed as Al2O3-15v/o ZrO2(+3m/o Y2O3). Critical temperature difference showing rapid strength degradation by thermal shock showed higher value in Al2O3/ZrO2 composites(process A : 20$0^{\circ}C$, process B : 215$^{\circ}C$) than in Al2O3(175$^{\circ}C$). The improvement of thermal shock property for Al2O3/ZrO2 composites was mainly due to the increase of strength at room temperature by adding ZrO2. The strength degradation was more severe for the sample with higher strength at room temperature. Crack initiation energies by thermal shock showed higher values in Al2O3/ZrO2 composites than in Al2O3 ceramics due to increase of fracture toughness by ZrO2.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.56.2-56.2
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• 2012

Clinically-favored materials for bone regeneration are mainly based on bioceramics due to their chemical similarity to the mineral phase of bone. A successful scaffold in bone regeneration should have a 3D interconnected pore structure with the proper biodegradability, biocompatibility, bioactivity, and mechanical property. The pore architecture and mechanical properties mainly dependent on the fabrication process. Bioceramics scaffolds are fabricated by polymer sponge method, freeze drying, and melt molding process in general. However, these typical processes have some shortcomings in both the structure and interconnectivity of pores and in controlling the mechanical stability. To overcome this limitation, the rapid prototyping (RP) technique have newly proposed. Researchers have suggested RP system in fabricating bioceramics scaffolds for bone tissue regeneration using selective laser sintering, powder printing with an organic binder to form green bodies prior to sintering. Meanwhile, sintering process in high temperature leads to bad cost performance, unexpected crystallization, unstable mechanical property, and low bio-functional performance. The development of RP process without high thermal treatment is especially important to enhance biofunctional performance of scaffold. The purpose of this study is development of new process to fabricate ceramic scaffold at room temperature. The structural properties of the scaffolds were analyzed by XRD, FE-SEM and TEM studies. The biological performance of the scaffolds was also evaluated by monitoring the cellular activity.

• 대한조선학회논문집
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• 제41권6호
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• pp.65-74
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• 2004

The inherent strain method is known to be very efficient in predicting the deformation of steel plate by line heating. However, in the actual line heating process in shipyard, the rapid quenching changes the phase of steel. In this study, In order to consider additional effects under phase transformation, inherent strain regions were assumed to expand. Also, when calculating inherent strain, material properties of steel in heating and cooling are applied differently considering phase transformation. In this process, a new method which can reflect thermal volume expansion of martensite is suggested.8y the suggested method, it was possible to predict the plate deformations by line heating more precisely.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2005년도 춘계학술대회 논문집
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• pp.176-179
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• 2005

Spray casting of hypereutectic Al-Si based alloy has been reported to provide distinct advantages over ingot metallurgy (IM) or rapid solidification/powder metallurgy (RS/PM) process in terms of microstructure refinement. Hypereutectic Al-Si based alloys have been regarded attractive for automotive and aerospace application, due to high specific strength, good wear resistance, low coefficient of thermal expansion, high thermal stability, and good creep resistance. In this study, hypereutectic Al-25Si-2.0Cu-1.0Mg alloy was prepared by OSPREY spray casting process. High temperature deformation behavior of the hypereutectic Al-Si based alloy has been investigated by applying the internal variable theory proposed by Chang et al. The change of strain rate sensitivity and Creep transition were analyzed by using the load relaxation test and constant creep test.

• 한국가스학회지
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• 제17권4호
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• pp.1-8
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• 2013

본 연구에서는 벌크 중합법을 이용한 폴리스티렌 중합공정의 폭주반응에 대한 열적 위험성을 가속속도열량계(ARC)와 소규모 반응열량계(MM)를 이용하여 평가하였다. 당해 중합공정은 반응온도 $120^{\circ}C{\sim}130^{\circ}C$로 운전되어져야 하며, $130^{\circ}C$ 이상의 반응온도에서는 반응 생성물의 급격한 점도 증가로 인하여 반응기의 온도제어 실패에 따른 폭주반응의 위험성이 존재하였다. 또한 당해 중합공정의 반응온도($120^{\circ}C{\sim}130^{\circ}C$)에서 공정운전 초기에 반응기의 냉각실패가 발생할 경우 폭주반응으로 인해 반응기의 온도와 압력이 각각 30 ~ 50분 이내에 약 $340^{\circ}C$, 5.3 bar 까지 급격히 상승하여 반응기의 파열판이 파열되거나 반응기가 폭발할 수 있는 열적 위험성이 높게 나타났다.

• Current Photovoltaic Research
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• 제3권3호
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• pp.80-84
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• 2015

We suggest new emitter formation method using solid-phase epitaxy (SPE); solid-phase epitaxy emitter (SEE). This method expect simplification and cost reduction of process compared with furnace process (POCl3 or BBr3). The solid-phase epitaxy emitter (SEE) deposited a-Si:H layer by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) on substrate (c-Si), then thin layer growth solid-phase epitaxy (SPE) using rapid thermal process (RTP). This is possible in various emitter profile formation through dopant gas ($PH_3$) control at deposited a-Si:H layer. We fabricated solar cell to apply solid-phase epitaxy emitter (SEE). Its performance have an effect on crystallinity of phase transition layer (a-Si to c-Si). We confirmed crystallinity of this with a-Si:H layer thickness and annealing temperature by using raman spectroscopy, spectroscopic ellipsometry and transmission electron microscope. The crystallinity is excellent as the thickness of a-Si layer is thin (~50 nm) and annealing temperature is high (<$900^{\circ}C$). We fabricated a 16.7% solid-phase epitaxy emitter (SEE) cell. We anticipate its performance improvement applying thin tunnel oxide (<2nm).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.15-16
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• 2006

The thermal stability of nickel silicide with compressively and tensilely stressed nitride capping layer has been investigated in this study. The Ni (10 nm) and Ni/Co/TiN (7/3/25 nm) structures were deposited on the p-type Si substrate. The stressed capping layer was deposited using plasma enhanced chemical vapor deposition (PECVD) after silicide formation by one-step rapid thermal process (RTP) at $500^{\circ}C$ for 30 sec. It was found that the thermal stability of nickel silicide depends on the stress induced by the nitride capping layer. In the case of Ni (10 nm) structure, the high compressive sample shows the best thermal stability, whereas in the case of Ni/Co/TiN (7/3/25 nm) structure, the high compressive sample shows the worst thermal stability.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.314-314
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• 2012

The dilute magnetic semiconductors (DMS) have been developed to multi-functional electro-magnetic devices. Specially, the Si based DMS formed by ion implantation have strong advantages to improve magnetic properties because of the controllable effects of carrier concentration on ferromagnetism. In this study, we investigated the deep level states of Fe- and Co-ions implanted Si wafer during rapid thermal annealing (RTA) process. The p-type Si (100) wafers with hole concentration of $1{\times}10^{16}cm^{-3}$ were uniformly implanted by Fe and Co ions at a dose of $1{\times}10^{16}cm^{-2}$ with an energy of 60 keV. After RTA process at temperature ranges of $500{\sim}900^{\circ}C$ for 5 min in nitrogen ambient, the Au electrodes with thickness of 100 nm were deposited to fabricate a Schottky contact by thermal evaporator. The surface morphology, the crystal structure, and the defect state for Fe- and Co- ion implanted p-type Si wafers were investigated by an atomic force microscopy, a x-ray diffraction, and a deep level transient spectroscopy, respectively. Finally, we will discuss the physical relationship between the electrical properties and the variation of defect states for Fe- and Co-ions implanted Si wafer after RTA.