Applied Science and Convergence Technology

The Korean Vacuum Society (한국진공학회)
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The Effects of Thermal Decomposition of Tetrakis-ethylmethylaminohafnium (TEMAHf) Precursors on HfO2 Film Growth using Atomic Layer Deposition

  • Oh, Nam Khen (Graduate School of Energy Science and Technology, Chungnam National University) ;
  • Kim, Jin-Tae (Vacuum Center, Korea Research Institute of Standards and Science) ;
  • Ahn, Jong-Ki (Vacuum Center, Korea Research Institute of Standards and Science) ;
  • Kang, Goru (Vacuum Center, Korea Research Institute of Standards and Science) ;
  • Kim, So Yeon (Graduate School of Energy Science and Technology, Chungnam National University) ;
  • Yun, Ju-Young (Vacuum Center, Korea Research Institute of Standards and Science)
  • Received : 2016.04.21
  • Accepted : 2016.05.17
  • Published : 2016.05.30
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Abstract

The ALD process is an adequate technique to meet the requirements that come with the downscaling of semiconductor devices. To obtain thin films of the desired standard, it is essential to understand the thermal decomposition properties of the precursors. As such, this study examined the thermal decomposition properties of TEMAHf precursors and its effect on the formation of $HfO_2$ thin films. FT-IR experiments were performed before deposition in order to analyze the thermal decomposition properties of the precursors. The measurements were taken in the range of $135^{\circ}C-350^{\circ}C$. At temperatures higher than $300^{\circ}C$, there was a rapid decrease in the absorption peaks arising from vibration of $Sp^3$ C-H stretching. This showed that the precursors experienced rapid decomposition at around $275^{\circ}C-300^{\circ}C$. $HfO_2$ thin films were successfully deposited by Atomic Layer Deposition (ALD) at $50^{\circ}C$ intervals between $150^{\circ}C$ to $400^{\circ}C$; the deposited films were characterized using a reflectometer, X-ray photoelectron spectroscopy (XPS), Grazing Incidence X-ray Diffraction (GIXRD), and atomic force microscopy (AFM). The results illustrate the relationship between the thermal decomposition temperature of TEMAHf and properties of thin films.

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References

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