• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1095-1099
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• 2009

As a substitute material for silicon, we synthesized few layer graphene (FLG) by CVD process with a 300-nm-thick nickel film deposited on the silicon substrate and found out the lowest temperature for graphene synthesis. Raman spectroscopy study showed that the D peak (wave length : ${\sim}1,350\;cm^{-1}$) of graphene was minimized and then the 2D one (wave length : ${sim}2,700\;cm^{-1}$) appeared when rapid thermal anneal is carried out with the $C_2H_2$ treated nickel film. This study demonstrates that a high quality FLG formed at a low temperature of $400^{\circ}C$ is applicable as CMOS devices and transparent electrode materials.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.130.1-130.1
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• 2007

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.18-22
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• 2008

In this paper, the Ni-Co alloy was used for thermal stability estimation comparison with Ni structure. The proposed Ni/Ni-Co structure exhibited wider range of rapid thermal process windows, lower sheet resistance in spite of high temperature annealing up to $700^{\circ}C$ for 30 min, more uniform interface via FE-SEM analysis, NiSi phase peak. Therefore, The proposed Ni/Ni-Co structure is highly promising for highly thermal immune Ni-silicide for nano-scale MOSFET technology.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2008년 영문 학술대회
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• pp.751-755
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• 2008

During the rapid startup transient of a centrifugal pump, in order to investigate its transient characteristics, the torque equations are deduced. Based on these equations, numerical simulation is carried out with the Large Eddy Simulation(LES) method and UDFs(User Defined Functions) are applied during the simulation. Comparison between simulation and experiment results of pump heads and rotational speed shows that they are in good agreement, indicating that the dynamic characteristics of this pump can be predicted accurate comparatively through simulation with LES method during its startup process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.110-111
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• 2009

상온에서 밴드갭이 2.42 eV의 에너지를 가지며 직접 에너지 밴드갭을 갖는 고감도의 광전도체로 태양전지의 광투과 물질로 각광을 받고 있으며 광전도 cell로 연구되고 있는 CdS(Cadmium sulfide)를 용액 성장법(CBD)으로 제조하여 박막의 결정립의 향상과 박막내의 결함 등을 제거하기 위해 RTP(Rapid Thermal Process)를 이용하여 열처리 분위기 $N_2$, 처리시간 10분을 기준으로 열처리온도 ($300\;^{\circ}C$, $400\;^{\circ}C$, $500\;^{\circ}C$)를 변화시키며 박막의 전기적, 광학적 특성을 조사하였다. 캐리어 밀도가 급격히 낮아지고 이동도가 증가한 $500\;^{\circ}C$에서 $1.29\times10^3\;{\Omega} m$ 비저항을 나타냈다. 가시광선 영역에서 76.28%의 투과율을 보이는 특성을 나타내었다.

• 한국전기전자재료학회논문지
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• 제30권11호
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• pp.734-739
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• 2017

We prepared $SnS_x$ thin films on both soda-lime glass (SLG) and molybdenum(Mo)/SLG substrates by a two-step process using a Sn precursor followed by sulfur reaction in rapid thermal annealing (RTA) at different sulfurization temperatures ($Ts=200^{\circ}C$, $230^{\circ}C$, $250^{\circ}C$, and $300^{\circ}C$) and annealing times ($t_s=10min$ and 30 min). The single SnS phase was dominant for $200^{\circ}C{\leq}T_s$<$250^{\circ}C$, while an additional phase of $SnS_2$ was appeared at $T_s{\geq}250^{\circ}C$ alongside SnS. The SnS grains in all the samples showed strong growth along the preferred [040] direction. The band-gap energy ($E_g$) of the films was estimated to be 1.24 eV.

• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.836-850
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• 1996

In this study, we have analyzed structural analysis and measured ferroelectric characteristics of PZT thin films prepared by sol gel process with different sintering conditions and different Zr/Ti mot%. When the Zr mot% of PZT thin film was increased, it was found that the remanent. polarization and coercive field were decreased and increased, respectively. Also, the maxium dielectric constant of PZT(50/50) thin film was 786.8. We got double hysteresis(anti-fcrroelectric) curve from PbZrO$_{3}$ thin film. As heating rate goes up, pyrochlore phase of PZT thin film was decreased and dielectric and ferroelectric characteristics were improved. As a result of variation of sintering temperature and time 500.deg. C-800.deg. C and 5 sec.-8 hours, respectively, we got optimal sintering temperature and time. The optimium sintering temperature and time of conventional furnace method and rapid thermal processing method were 650.deg. C-700.deg. C for 30-60 minutes and 700.deg. C/20 seconds-2 minutes, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.49-50
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• 2005

Nitrogen and phosphorus ions were implanted into ZnO thin film fabricated by pulsed laser deposition. ion implanted ZnO thin films were annealed from $700^{\circ}C$ to $1000^{\circ}C$ using rapid thermal annealing process. The electron concentration was changed form $10^{20}$ to $10^{18}/cm^3$. Effect of nitrogen and phosphorus in ZnO thin films was certified and the structural and optical properties of nitrogen and phosphorus doped ZnO thin films depending on concentration of nitrogen and phosphorus were investigated.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.571-572
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• 2006

RTP (rapid thermal pressing), one of micro-pattern replication techniques like hot embossing, is focused on achieving shorter cycle time. DFSS(Design for Six Sigma) has been applied in order to enhance the completeness of the development process for RTP system. According to DIDOV roadmap, we derived design concepts and subsequently decided the main performances, design factors, and components for RTP system. In the design process of RTP system using finite element analysis, it was realized that its structural characteristics affect large area replicability. Optimizing structural design factors, based on CAE, it was checked out that its large area replicability could be improved in a virtual test. Finally, we have a plan to validate the large area replicability of the developed RTP system, by performing micro-pattern replication tests with polymeric sheets.

• 대한전자공학회논문지
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• 제27권9호
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• pp.1409-1418
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• 1990

Characteristics of NMOS transistors with phosphorus source/drain junctions formed by two-step rapid thermal diffusion (RTD) process using a solid diffusion source have been investigated. Phosphorus profiles after RTD were measured by SIMS analysis. In the case of 1100\ulcorner, 10sec RTD of, P, the specific contact resistance of n+ Si-Al was 2.4x10**-7 \ulcorner-cm\ulcorner which is 1/5 of the As junction The comparison fo P junction devices formed by RTD and conventional As junction devices shows that both short channel effect and hot carrier effect of P junction devices are smaller than those of As junction devices when the devices have same junction depths. P junction device had maximum of 0.4 times lower Isub/Id than As junction device. Characteristics of P junction formed by several different RTD conditions have been compared and 1000\ulcorner RTD sample had the smaller hot carrier generation. Also, it has been shown that the hot carrier generation can be futher reduced by forming the P junctions by 3-step RTD which has RTO-driven-in process additionally.