• 제목/요약/키워드: Rapid densification

검색결과 59건 처리시간 0.022초

고주파유도가열 연소합성에 의한 나노구조 ReSi1.75 제조 및 기계적 성질 (Mechanical Properties and Fabrication of Nanostructured ReSi1.75 by High Frequency Induction Heated Combustion Synthesis)

  • 김병량;김수철;손인진
    • 한국분말재료학회지
    • /
    • 제16권1호
    • /
    • pp.16-21
    • /
    • 2009
  • Nanostructured $ReSi_{1.75}$ was synthesized to have high density via rapid and cost effective process named as high-frequency induction heated combustion synthesis(HFIHCS) method. For the process, mechanically activated Re-Si powder was used, which had been prepared by mechanical ball milling of Re and Si powders with mixing ratio of 1:1.75. Both combustion synthesis and densification were accomplished simultaneously by applying electric current and mechanical pressure of 80 MPa during the process. The average grain size, hardness, and fracture toughness of the compound were 210 nm, 1085 $kg/mm^2$ and 4 $MPa{\cdot}m^{1/2}$, respectively. The experimental results show that HFIHCS is a promising process for synthesis of nanostructured $ReSi_{1.75}$ which has a potential for both high temperature and thermo-electric applications.

Relative Clauses in a Modern Diachronic Corpus of Singapore English

  • Lee, Kit Mun
    • 아시아태평양코퍼스연구
    • /
    • 제1권1호
    • /
    • pp.31-60
    • /
    • 2020
  • This paper investigates changes in relativization in Singapore English broadsheet newspapers from 1993 to 2016. One of the first diachronic studies in Singapore English (SgE), it also explores corresponding data from the diachronic Siena-Bologna (SiBol) news corpus. As SgE is in the endonormative stabilization phase in Schneider's (2007) Dynamic Model of postcolonial Englishes, divergence from British English (BrE) is to be expected. In this study, the dataset is a new Singapore English Newspaper (SEN) corpus compiled from local news articles in 1993, 2005 and 2016, and the corpus tool employed is Sketch Engine. The results reveal changes in relativization practices in SEN over the given period, many of which occur in a similar pattern as those identified in SiBol, albeit at varying rates of change. Most significant of these include a sharp decline in the which relativizer in restrictive relative clauses with non-animate antecedents, complemented by a rise in that. The change has been so rapid that although which relative clauses were more common than that clauses in 1993, that has subsequently overtaken which for both the corpora. One shift in SEN that is different from SiBol is the increase in frequency of non-restrictive relative clauses in SgE. The likely motivators for the changes in the two varieties are identified as colloquialization, densification and prescriptivism. The effect each of these factors could have had on the varieties are discussed, as well as the implications that the findings have on our understanding of the evolutionary status of SgE as a postcolonial variety.

탄산암모늄 공침을 이용한 Ce0.8Gd0.2O1.9 분말의 합성 및 소결특성 (Preparation and Sintering Characteristics of Ce0.8Gd0.2O1.9 Powder by Ammonium Carbonate Co-precipitation)

  • 유영창;정병주;심수만
    • 한국세라믹학회지
    • /
    • 제49권1호
    • /
    • pp.118-123
    • /
    • 2012
  • GDC20($Ce_{0.8}Gd_{0.2}O_{1.9}$) powder was synthesized from Ce and Gd nitrate solutions using ammonium carbonate($(NH_4)_2CO_3$) as a precipitant. Attrition-milling of the powder, which had been calcined at $700^{\circ}C$ for 4 h, decreased an average particle size of 2.2 ${\mu}m$ to 0.5 ${\mu}m$. The milled powder consisted of nano-sized spherical primary particles. Due to the excellent sinterability of the powder, sintering of the powder compacts for 4 h showed relative densities of 80% at 1000 $^{\circ}C$ and 96.5% at $1200^{\circ}C$, respectively. Densification was found to almost complete at $1300^{\circ}C$, resulting in a dense and homogeneous microstructure with a relative density of 99.5%. The grains of ~0.2 ${\mu}m$ in size at $1200^{\circ}C$ grew to ~1 ${\mu}m$ in size at $1300^{\circ}C$ as a result of a rapid grain growth.

저온소성 프릿이 첨가된 MnWO4의 소결체의 습도특성 (Humidity Properties of Sintered MnWO4 with a Low Temperature Firing Frit)

  • 정병해;소지영;김형순
    • 한국재료학회지
    • /
    • 제13권2호
    • /
    • pp.120-125
    • /
    • 2003
  • A low melting borosilicate glass frit was used as an adhesion promoter, which enables $MnWO_4$to be sintered with in a reasonable sintering temperature range ($800∼1000^{\circ}C$). The glass was evaluated for glass transition temperature ($Τ_{g}$ X) and thermal expansion coefficient($\alpha$). Mechanical property (Vickers hardness), grain growth, the comparison of lattice parameter and pore distribution of sintered $MnWO_4$ with the frit were methodically discussed. As sintering temperature increased, a typical liquid phase sintering showed the rapid grain growth and high densification of X$MnWO_4$grain, improvement of hardness (until $920^{\circ}C$) and different pore size distribution. Resistance of sintered $MnWO_4$varied from 450k$\Omega$ to 8.8M$\Omega$ under the measuring humidify ranging from 30 to 90%. Thus, the results will contribute to the application of glass frit containing sensor materials and their future use.

Fabrication of Ultra fine WC-Ni Hard Materials by Rapid Sintering Process

  • Kim Hwan-Cheol;Oh Dong-Young;Shon In-Jin
    • 한국분말야금학회:학술대회논문집
    • /
    • 한국분말야금학회 2004년도 International Symposium on Powder Materials and Processing
    • /
    • pp.98-99
    • /
    • 2004
  • (1) Using high-frequency induction heating sintering and spark plasma sintering method, the densification of WC-Ni hard materials was accomplished using ultra fine power of Ni and WC. (2) Nearly fully dense WC-Ni could be obtained within 1 min. (3) Relative density and mechanical properties of WC-Ni obtained by HFIHS were high than those obtained by SPS. And WC grain size made by HFIHS was smaller than that made by SPS. (4) The fracture toughness and hardness values of WC-8Ni, WC-10Ni, and WC-12Ni made by HFIHS were $13MPa{\cdot}m^{1/2}\;and\;1950kg/mm^2,\;13.5Mpa{\cdot}m^{1/2}\;and\;1810kg/mm^2,\;14.4MPa{\cdot}m^{1/2}\;and\;1690kg/mm^2$, respectively for 60MPa and an induced current for 90% output of total capacity, 15KW. (5) The fracture toughness and hardness values of WC-8Ni, WC-10Ni, and WC-12Ni made by SPS were $12.2MPa{\cdot}m^{1/2}\;and\;1796kg/mm^2,\;12.9MPa{\cdot}m^{1/2}\;and\;1725kg/mm^2,\;13.6MPa{\cdot}m^{1/2}\;and\;1597kg/mm^2$, respectively for 60MPa and the electric current of 2500 A

  • PDF

용탕 침투법을 이용한 복합 삽입 금속의 제조 (Fabrication of Composite Filler Metal by Melt Infiltration)

  • 박흥일;김지태;김우열
    • 한국주조공학회지
    • /
    • 제23권5호
    • /
    • pp.244-250
    • /
    • 2003
  • The aim of this study is fabricating of composite filler metal (CFM) by a combination of selective laser sintering (SLS) of stainless steel powders (RapidSteel $2.0^{TM}$ and liquid phase infiltration of Ag-28 wt.%Cu alloy. Porous stainless steel body with inter-connected pore channels was fabricated by SLS, binder decomposing and densification processes. By the direct contact infiltration, the narrow inter-particle channels of the porous body were completely filled with the Ag-28 wt.%Cu alloy infiltrant. During infiltration, the dissolved elements of Fe, Ni and Cr from the porous body were solved into copper solid solution phases, which consist of eutectic structure of composite metal matrix. The S10C/CFM/S10C joints, which have narrow clearance gaps between them up to 10 micrometers, were joined successfully by self-feeding of filler metal from the matrix of CFM. The CFM kept its original thickness and microstructure after brazing. The tensile strength of brazed specimen was higher than 30 kgf/$mm^2$ and showed a typical ductile fracture mode in the CFM.

$Cu(In,\;Ga)Se_2$ 나노입자을 이용한 광흡수층 치밀화에 따른 Se 분위기의 열처리 효과 (Effect of Heat-Treatment in Se Atmosphere on the Densification of Absorber Layer Using $Cu(In,\;Ga)Se_2$ Nanoparticles)

  • 윤경훈;김기현;안세진;안병태
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 한국신재생에너지학회 2006년도 춘계학술대회
    • /
    • pp.210-213
    • /
    • 2006
  • 나노입자를 이용하여 치밀한 $Cu(In,\;Ga)Se_2$ 태양전지용 광흡수층을 제조하기 위해 먼저, 콜로이달 방법으로 합성된 20nm이하의 CIGS 나노입자를 저가의 스프레이 법을 이용하여 CIGS 막을 제조하였다. 제조된 CIGS막을 two-zone RTP (rapid temperature Process) 방법으로 Se 분위기 안에서 열처리를 행하였다. 입자의 치밀화를 위해 기판의 온도, Se 증발온도와 수송가스의 유량을 조절하여 CIGS 입자성장을 행하였다. 그러나, Se의 증발온도가 높을수록 CIGS와 MO 박막 사이에서 $MoSe_2$ 층이 형성되었다. 형성된 $MoSe_2$층의 부피 팽창으로 인해 하부의 유리기판과 Mo층 사이에서 peeling off 현상이 발생했다. 이러한 Peeling off현상을 억제하면서 CIGS 나노입자 성장을 하기 위해, Se 공급을 빨리 할 수 있도록 Se의 증기압을 높였으며, 최적조건에서 급속 열처리 공정을 통해 CIGS 나노입자 성장과 치밀화를 위한 소결거동을 관찰하였다.

  • PDF

Influence of the SPS heating rate on the optical and mechanical properties of Y2O3-MgO nanocomposites

  • Yong, Seok-Min;Choi, Doo Hyun;Lee, Kisu;Ko, Seok-Young;Cheong, Dong-Ik
    • Journal of Ceramic Processing Research
    • /
    • 제20권1호
    • /
    • pp.59-62
    • /
    • 2019
  • Y2O3-MgO nanocomposites are promising materials for hypersonic infrared windows and domes due to their excellent midIR transmittance and mechanical properties. In this work, influence of SPS heating rate on the microstructure, IR transmittance, and mechanical properties of Y2O3-MgO nanocomposites was investigated. It was found that the average grain size decreases with a decreasing heating rate, which can be attributed to high defect concentration by rapid heating and deformation during densification. Also, the residual porosity decreases with a decreasing heating rate, which is ascribed to the enhancement of grain boundary diffusion by a large grain-boundary area (a small grain size). Consequently, high transmittance and hardness were attained by the low heating rate. On the other hand, the mechanical strength showed little difference with the heating rate change, which is somewhat different from the general knowledge on ceramics and will be discussed in this letter.

SiC 재료의 미세조직 및 열충격 특성 (Microstructure and Thermal Shock Properties of SiC Materials)

  • 이상필;조경서;이현욱;손인수;이진경
    • 한국해양공학회지
    • /
    • 제25권3호
    • /
    • pp.28-33
    • /
    • 2011
  • The thermal shock properties of SiC materials were investigated for high temperature applications. In particular, the effect of thermal shock temperature on the flexural strength of SiC materials was evaluated, in conjunction with a detailed analysis of their microstructures. The efficiency of a nondestructive technique using ultrasonic waves was also examined for the characterization of SiC materials suffering from a cyclic thermal shock history. SiC materials were fabricated by a liquid phase sintering process (LPS) associated with hot pressing, using a commercial submicron SiC powder. In the materials, a complex mixture of $Al_2O_3$ and $Y_2O_3$ powders was used as a sintering additive for the densification of the microstructure. Both the microstructure and mechanical properties of the sintered SiC materials were investigated using SEM, XRD, and a three point bending test. The SiC materials had a high density of about 3.12 Mg/m3 and an excellent flexural strength of about 700 MPa, accompanying the creation of a secondary phase in the microstructure. The SiC materials exhibited a rapid propagation of cracks with an increase in the thermal shock temperature. The flexural strength of the SiC materials was greatly decreased at thermal shock temperatures higher than $700^{\circ}C$, due to the creation of microcracks and their propagation. In addition, the SiC materials had a clear tendency for a variation in the attenuation coefficient in ultrasonic waves with an increase in thermal shock cycles.

Characterization of an Oxidized Porous Silicon Layer by Complex Process Using RTO and the Fabrication of CPW-Type Stubs on an OPSL for RF Application

  • Park, Jeong-Yong;Lee, Jong-Hyun
    • ETRI Journal
    • /
    • 제26권4호
    • /
    • pp.315-320
    • /
    • 2004
  • This paper proposes a 10-${\mu}m$ thick oxide layer structure that can be used as a substrate for RF circuits. The structure has been fabricated using an anodic reaction and complex oxidation, which is a combined process of low-temperature thermal oxidation (500 $^{\circ}C$ for 1 hr at $H_2O/O_2$) and a rapid thermal oxidation (RTO) process (1050 ${\circ}C$, for 1 min). The electrical characteristics of the oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current density through the OPSL of 10 ${\mu}m$ was about 10 to 50 $nA/cm^2$ in the range of 0 to 50 V. The average value of the breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL prepared by a complex process were confirmed to be completely oxidized. The role of the RTO process was also important for the densification of the porous silicon layer (PSL) oxidized at a lower temperature. The measured working frequency of the coplanar waveguide (CPW) type short stub on an OPSL prepared by the complex oxidation process was 27.5 GHz, and the return loss was 4.2 dB, similar to that of the CPW-type short stub on an OPSL prepared at a temperature of 1050 $^{\circ}C$ (1 hr at $H_2O/O_2$). Also, the measured working frequency of the CPW-type open stub on an OPSL prepared by the complex oxidation process was 30.5 GHz, and the return was 15 dB at midband, similar to that of the CPW-type open stub on an OPSL prepared at a temperature of $1050^{\circ}C$ (1 hr at $H_2O/O_2$).

  • PDF