• 전자통신동향분석
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• 제13권3호통권51호
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• pp.71-83
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• 1998

반도체 제조용 웨이퍼의 온도를 측정하고 제어하는 기술의 진보로 열처리 장비 시장에서 점점 더 각광을 받고 있는 급속 열처리(rapid thermal process: RTP) 장치의 최근 기술 동향을 전반적으로 조사 분석하였다. RTP의 장점, 온도 제어 모델링 기술(model-based control), 최근에 개발된 여러 종류의 RTP 시스템 설계 및 이들 각각의 기술적인 문제들이 기술된다. 새롭게 개발된 단일 wafer furnace와 광자 효과를 이용한 rapid photothermal process (RPP)에 관해서도 기술하였다. 아울러 최근 열처리 장비 업체들의 현황과 열처리 장비 시장의 향후 전망에 관해서도 검토하였다.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2000년도 제15차 학술회의논문집
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• pp.358-358
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• 2000

An iterative learning control technique based on a linear quadratic optimal criterion is proposed for temperature uniformity control of a silicon wafer in rapid thermal processing.

• 전자공학회논문지D
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• 제34D권10호
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• pp.68-76
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• 1997

In this paper, design parameters of rapid thermal processing(RTP) to minimize the wafer temperature uniformity errors are proposed. Lamp ring positions and the wafer height are important parameters for wafer temperature uniformity in RTP. We propose the method to seek lamp ring positions and the wafer gheight for optimal temperature uniformity. The proposed method is applied to seek optimal lamp ring positions and the wafer feight of 8 inch wafer. To seek the optimal lamp ring positions and the wafer height, we vary lamp ring positions and the wafer height and then formulate the wafer temperature uniformity problem to the linear programming problem. Finally, it is shown that the wafer temperature uniformity in RTP designed by optimal problem. Finally, it is hsown that the wafer temperature uniformity is RTP designed by optimal parameters is improved to comparing with RTP designed by the other method.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1995년도 Proceedings of the Korea Automation Control Conference, 10th (KACC); Seoul, Korea; 23-25 Oct. 1995
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• pp.79-82
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• 1995

The problem of temperature control for rapid thermal processing (RTP) in semiconductor manufacturing is discussed in this paper. Among sub=micron technologies for VLSI devices, reducing the junction depth of doped region is of great importance. This paper investigates existing methods for manufacturing wafers, focusing on the RPT which is considered to be good for formation of shallow junctions and performs the wafer fabrication operation in a single chamber of annealing, oxidation, chemical vapor deposition, etc., within a few minutes. In RTP for semiconductor manufacturing, accurate and uniform control of the wafer temperature is essential. In this paper, a robustr controller is designed using a recently developed optimization technique. The controller designed is then tested via computer simulation and compared with the other results.

• 조명전기설비학회논문지
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• 제27권3호
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• pp.107-112
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• 2013

Cu(In,Ga)$Se_2$ (CIGS) thin films were annealed on molybdenium/sodalime glass substrates of $300{\times}300mm^2$ by rapid thermal processing (RTP) with 2-step rising-temperature times in $N_2$ ambient. Morphological property, structural characteristics and chemical composition of the precursor of CIGS thin films were influenced directly with a change of $1^{st}$-step rising-temperature time in RTP whereas there is no significant difference with the different $2^{nd}$-step rising-temperature time (final crystallization temperature). The shorter $1^{st}$-step rising-temperature time in RTP obtained the higher photovoltaic cell efficiency from 7.469% to 8.479% even though the ideal composition in CIGS thin films could not be accoplished in this study.

• 대한전자공학회논문지
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• 제27권12호
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• pp.1865-1869
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• 1990

N-Channel polysilicon MOSFETs (W/L=20/1.5, 3, 5.10\ulcorner) were fabricated using RTP (Rapid Thermal Processor) and hydrogen passivation. The N+ source, drain and gate were annealed and recrystallized using RTP at temperature of 1000\ulcorner-1100\ulcorner. But the active areas were not specially crystallized before growing the gate oxide. Without the hydrogen passivarion, excellent transistor characteristics (ON/OFF=5.10**6, S=85MV/DEC, IL=51pA/\ulcorner) were obtained for 1.5\ulcorner MOSFET. Also the transistor characteristics were improved by hydrogen passivation.

• 한국전기전자재료학회논문지
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• 제26권5호
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• pp.410-414
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• 2013

Rapid thermal processing (RTP) abruptly decreases the time required to perform solar cell processes. RTP were used to form emitter of crystalline silicon solar cells. The emitter sheet resistance is studied as a function of time and temperature. The objective of this study is reduction of doping process time with same performance. Emitter difRapid thermal dfusion was carried out by using a spin on doping and a RTP. iffusion was performed in the temperature range of $700{\sim}750^{\circ}C$ for 1m 30s~15 m. Thermal budgets yielded a $50{\Omega}/sq$ emitter using a P509 source. To reduce process time and get high efficiency, rapid thermal diffusion by IR lamp was employed in air atmosphere at $700^{\circ}C$ for 15 m.

• 전기전자학회논문지
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• 제3권1호
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• pp.109-117
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• 1999

본 논문에서는 급속 열처리 공정에서 필수적인 빠르고 정밀한 웨이퍼의 온도제어기법을 제안하였다. Bang- Bang/PID 제어기법은 빠른 온도상승률을 만족하고, 오버슈트와 정상상태 오차를 줄이도록 한다. 즉 초기에 허용 가능한 최대전력을 공급하는 일종의 Bang-Bang 방식의 제어를 하고, 설정온도와 출력에서 측정되는 온도와의 차이가 어느 정해진 범위보다 작을 때 PID 제어를 수행한다. 또한 PID 이득을 정하기 위해 ARX 모델로 식별된 플랜트에 Kappa-Tau 동조법이 사용되었다. 개발된 제어기는 실험용 RTP 장비에 적용하여 그 성능을 평가하였다.

• 제어로봇시스템학회논문지
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• 제6권6호
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• pp.500-505
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• 2000

This paper deals with wafer temperature uniformity control essential in rapid thermal processing (RTP). One of the important control objectives of RTP is to keep the temperature over the wafer surface as uniformly as possible. For this, a discrete time state equation around the operating point is first identified by using the subspace fitting method, and a multivariable LQG(Linear Quadratic Gaussian) controller is designed based on the identified model. Simulation and experimental results show improvement in temperature uniformity over the conventional PID method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.234-234
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• 2008

Chemically homogeneous $Ba_{0.6}Sr_{0.4}TiO_3$ (BST) sols were synthesized using barium acetate, strontium acetate, and titanium isoproxide as starting materials. BST thin films of thickness 340 nm were deposited on Pt/$TiO_2/SiO_2$/Si and alumina substrates using spin coating method. The technique used for the processing of these films was Ultraviolet (UV) sol-gel photoannealing, using phto-sensitivity precursor solutions and UV-assisted rapid thermal processing(UV-RTP). The crystallization behaviour of the BST sols and thin films was studied by differential thermal analysis (DTA) and X-ray diffraction (XRD). Variation of permittivity and dielectric loss were measured in LCR-meter, model HP 4394A.