• Corrosion Science and Technology
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• v.7 no.2
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• pp.69-76
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• 2008

Common methods for large scale hydrogen production, such as steam reforming and coal gasification, also involve production of carbonaceous gases. It is therefore necessary to handle process gas streams involving various mixtures of hydrocarbons, $H_2$, $H_2O$, CO and $CO_2$ at moderate to high temperatures. These gases pose a variety of corrosion threats to the alloys used in plant construction. Carbon is a particularly aggressive corrodent, leading to carburisation and, at high carbon activities, to metal dusting. The behaviour of commercial heat resisting alloys 602CA and 800, together with that of 304 stainless steel, was studied during thermal cycling in $CO/CO_2$ at $650-750^{\circ}C$, and also in $CO/H_2/H_2O$ at $680^{\circ}C$. Thermal cycling caused repeated scale separation, which accelerated chromium depletion from the alloy subsurface regions. The $CO/H_2/H_2O$ gas, with $a_C=2.9$ and $p(O_2)=5\times10^{-23}$ atm, caused relatively rapid metal dusting, accompanied by some internal carburisation. In contrast, the $CO/CO_2$ gas, with $a_C=7$ and $p(O_2)=10^{-23}-10^{-24}$ atm caused internal precipitation in all three alloys, but no dusting. Inward diffusion of oxygen led to in situ oxidation of internal carbides. The very different reaction morphologies produced by the two gas mixtures are discussed in terms of competing gas-alloy reaction steps.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.90-93
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• 2004

In this work, we have used different techniques for the surface passivation: conventional thermal oxidation (CTO), rapid thermal oxidation (RTO), and plasma-enhanced chemical vapour deposition (PECVD). The surface passivation qualities of eight different single and combined double layer have been investigated both on the phosphorus non-diffused p-type FZ silicon and on phosphorus diffused emitter of 100 ${\Omega}/Sq$ and 40 ${\Omega}/Sq$. In the single layer, silicon dioxide $(SiO_2)$ passivates good on the emitter while silicon nitride (SiN) passivates better than on the non-diffused surface. In the double layers, CTO/SiN1 passivates very well both on non-diffused surface on the emitter. However, RTO/SiN1 and RTO/SiN2 stacks are more suitable for surface passivation in solar cells caused by a relatively good passivation qualities and the low optical reflection. Applying these stacks in solar cells we achieved 18.5 % and 18.8 % on 0.5 ${\Omega}$ cm FZ-Si with planar and textured front surface, respectively. The excellent open circuit voltage $(V_{oc})$ of 675.6 mV is obtained the planar cell with RTO/SiN stack.

• Nuclear Engineering and Technology
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• v.52 no.4
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• pp.742-754
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• 2020

Zircaloy cladding oxidation is an important phenomenon for both design basis accident and severe accidents, because it results in cladding embrittlement and rapid fuel temperature escalation. For this reason during the last decade, many experts have been conducting experiments to identify the oxidation phenomena that occur under design basis accidents and to develop mathematical analysis models. However, since the study of design extension conditions (DEC) is relatively insufficient, it is essential to develop and validate a physical and mathematical model simulating the oxidation of the cladding material at high temperatures. In this study, the QUENCH-05 and -06 experiments were utilized to develop the best-fitted oxidation model and to validate the SPACE code modified with it under the design extension condition. It is found out that the cladding temperature and oxidation thickness predicted by the Cathcart-Pawel oxidation model at low temperature (T < 1853 K) and Urbanic-Heidrick at high temperature (T > 1853 K) were in excellent agreement with the data of the QUENCH experiments. For 'LOCA without SI' (Safety Injection) accidents, which should be considered in design extension conditions, it has been performed the evaluation of the operator action time to prevent core melting for the APR1400 plant using the modified SPACE. For the 'LBLOCA without SI' and 'SBLOCA without SI' accidents, it has been performed that sensitivity analysis for the operator action time in terms of the number of SIT (Safety Injection Tank), the recovery number of the SIP (Safety Injection Pump), and the break sizes for the SBLOCA. Also, with the extended acceptance criteria, it has been evaluated the available operator action time margin and the power margin. It is confirmed that the power can be enabled to uprate about 12% through best-estimate calculations.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.6
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• pp.55-65
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• 1998

In industrial fields, RTP(rapid thermal processing) system is widely used for improving the oxidation and the annealing in semiconductor manufacturing process. The main control factors are temperature control of wafer and uniformity in the wafer. In this paper, we propose an $H^{\infty}$ controller design of RTP system satisfying robust stability and performance using weighted mixed sensitivity miniimization and loop shaping technique. And we need reduction technique because of the difficulty of implementation with the obtained high order controller for original model and reduced models, namely, Hankel, square-root balanced, and Schur balanced methods. An example is proposed to show the validity of the proposed method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.169-172
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• 2004

The effect of the process parameters on the stable lifetime in rapid thermal firing(RTF) was investigated in order to optimize the process for the Cz-silicon. The process temperature was varied between $700^{\circ}C\;and\;950^{\circ}C$ while the process time was chosen 1 s and 10 s. At below $850^{\circ}C$ the stable lifetime for 10 s is higher than that for 1 s and increases with increasing by the process temperature. However, at over $850^{\circ}C$ the improved stable lifetime is not dependent on the process time and temperature. On the other hand, two high temperature processes in solar cell fabrics are combined with the optimized process and the non-optimized process. The last process determines the stable lifetime. Also, the degraded stable lifetime could be increased by processing in optimized process. The decreased lifetime can increase using the optimized oxidation process, which is a final process in solar cells. Finally, the optimized and non-optimized processes are applied solar cells.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.3
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• pp.270-272
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• 2005

The behavior of surface oxidation on cobalt silicide layer was investigated under rapid thermal oxidation (RTO) conditions. The cobalt silicide layer was prepared on p-type silicon substrates. We used Ti thin film as a capping layer in order to measure the degree of oxidation of the layer. Oxide grew faster on the cobalt silicide prepared with the Ti capping layer to reach ca $500{\AA}$ at $700^{\circ}C$ in thickness. The oxide film kept growing under $550^{\circ}C\~700^{\circ}C$ of the RTO condition, resulting in a saturated state above $500{\AA}$.

• Environmental Engineering Research
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• v.10 no.1
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• pp.38-44
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• 2005

Electro-thermal production of white phosphorus(WP, P4) generates substantial amount of highly toxic phossy water and sludges. Because of their high phosphorus contents and lack of reliable processing technology, large tonnages of these hazardous wastes have accumulated from current and past operations in the United States. In this study, two different methods for treatment of phosphorus sludge were investigated. These were bulk removal of WP by physical separation(froth flotation) and transformation of WP to oxyphosphorus compounds by air oxidation in the sludge medium. Kerosene, among other collectors, resulted in selective flotation of WP from the associated mineral gangue. Solvent action of kerosene occurring on the WP surface(by rendering WP particles hydrophobic) might produce the high selectivity of WP. The WP recovery in the froth was 79.3% from a sludge assaying 34.2% of WP. In the oxidation study, air gas was dispersed in the sludge medium by the rapid rotation of the impeller blades. The high level of sludge agitation intensity caused a fast completion of the oxidation reactions and it resulted in the high percentage conversion of WP to PO4-3 with PO3-3 making up almost all portion of oxyphosphorus compounds. The WP analysis on the treated sludge showed that supernatant solution and solid residue contained an average of 4.2 μg/L and 143 ppm respectively from the sludge containing about 26 g of WP. Further investigation will be required on operational factors to better understand the processes and achieve an optimum condition.

• Composites Research
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• v.29 no.1
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• pp.40-44
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• 2016

Nuclear fuel cladding used in a nuclear power plant must possess superior oxidation resistance in the coolant atmosphere of high temperature/high pressure. However, as was the case for the critical LOCA (loss-of-coolant accident) accident that took place in the Fukushima disaster, there is a risk of hydrogen explosion when the nuclear fuel cladding and steam reacts dramatically to cause a rapid high-temperature oxidation accompanied by generation of a huge amount of hydrogen. Hence, an active search is ongoing for an alternative material to be used for manufacturing of nuclear fuel cladding. Studies are currently aimed at improving the safety of this cladding. In particular, ceramic-based nuclear fuel cladding, such as SiC, is receiving much attention due to the excellent radiation resistance, high strength, chemical durability against oxidation and corrosion, and excellent thermal conduction of ceramics. In the present study, cladding with $SiC_f/SiC$ protective films was fabricated using a process that forms a matrix phase by polymer impregnation of polycarbosilane (PCS) after filament-winding the SiC fiber onto an existing Zry-4 cladding tube. It is analyzed the oxidation and microstructure of the metal cladding with $SiC_f/SiC$ composite protective films using a drop tube furnace for thermal shock test.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.44-50
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• 2001

Metal oxide semiconductor (MOS) structures containing nanocrystals are fabricated by using rapid thermal oxidations of amorphous silicon films. The amorphous films are deposited either by electron beam deposition method or by electron beam deposition assisted by Ar ion beam during deposition. Post oxidation of e-beam deposited film results in relatively small hysteresis of capacitance-voltage (C-V) and the flat band voltage shift, $\DeltaV_{FB}$ is less than 1V indicative of the formation of low density nanocrystals in $SiO_2$ near $SiO_2$/Si interface. By contrast, we observe very large hysteresis in C-V characteristics for oxidized ion-beam assisted e-beam deposited sample. The flat band voltage shift is larger than 22V and the hysteresis becomes even broader as increasing injection times of holes at accumulation condition and electrons at inversion condition. The result indicates the formation of slow traps in $SiO_2$ near $SiO_2$/Si interface which might be related to large density nanocrystals. Roughly estimated trap density is $1{\times}10^{13}cm^{-2}$. Such a large hysteresis may be explained in terms of the activation of adatom migration by Ar ion during deposition. The activated migration may increase nucleation rate of Si nuclei in amorphous Si matrix. During post oxidation process, nuclei grow into nanocrystals. Therefore, ion beam assistance during deposition may be very feasible for MOS structure containing nanocrystals with large density which is a basic building block for single electron memory device.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.133-133
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• 2011

최근 나노입자를 이용한 비휘발성 메모리 소자의 제작에 대한 연구가 진행되고 있다. 특히, 실리사이드 계열의 나노입자를 적용한 소자는 일함수가 크지만 실리콘 내의확산 문제를 가지고 있는 금속 나노입자와 달리 현 실리콘 기반의 반도체 공정 적용이 용이한 잇 점을 가지고 있다. 따라서 본 연구에서는 실리사이드 계열의 화합물 중에서 4.63 eV인 Vanadium Silicide ($V_3$Si) 박막을 열처리 과정을 통하여 수 nm 크기의 나노입자로 제작하였다. 소자의 제작은 p-Si기판에 5 nm 두께의 $SiO_2$ 터널층을 dry oxidation 방법으로 성장시킨 후 $V_3$Si 금속박막을 RF magnetron sputtering system을 이용하여 3~5 nm 두께로 tunnel barrier위에 증착시켰다. Rapid thermal annealing법으로 질소 분위기에서 $1000^{\circ}C$의 온도로 30초 동안 열처리하여 $V_3$Si 나노 입자를 형성 하였으며. 20 nm 두께의 $SiO_2$ 컨트롤 산화막층을 ultra-high vacuum magnetron sputtering을 이용하여 증착하였다. 마지막으로 thermal evaporation system을 통하여 Al 전극을 직경 200, 두께 200nm로 증착하였다. 제작된 구조는 metal-oxide-semiconductor구조를 가지는 나노 부유 게이트 커패시터 이며, 제작된 시편은 transmission electron microscopy을 이용하여 $V_3$Si 나노입자의 크기와 균일성을 확인했다. 소자의 전기적인 측정은 E4980A capacitor parameter analyzer와 Agilent 81104A apulse pattern generator system을 이용한 전기용량-전압 측정을 통해 전하저장 효과를 분석하였다.