• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.18-21
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• 2013

$SiO_2$ layer grown by rapid thermal oxidation and $SiN_x$ layer were used for passivating the surface of n-type silicon solar cell, instead of only $SiN_x$ layer generally used in photovoltaic industry. The rapid thermal oxidation provides the reduction of processing time and avoids bulk life time degradation during the processing. Improvement of 30 mV in Voc and $2.7mA/cm^2$ in Jsc was obtained by applying these two layers. This improvement led to fabrication of a large area ($239cm^2$) n-type solar cell with 17.34% efficiency. Internal quantum efficiency measurement indicates that the improvement comes from the front side passivation, but not the rear side, by using $SiO_2/SiN_x$ stack.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.21-26
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• 2004

Ultra-thin silicon dioxides were grown on p-type(100) oriented silicon employing rapid thermal dry oxidation technique at the temperature range of 850∼1050 $^{\circ}C$. The growth rate of the ultra-thin film was fitted well with tile model which was proposed recently by da Silva ＆ Stosic. The capacitance-voltage, current-voltage, characteristics were used to study the electrical properties of these thin oxides. The minimum interface state density around the midgap of the MOS capacitor having oxide thickness of 111.6 $\AA$ derived from the C-V curve was ranged from 6 to 10${\times}$10$^{10}$ /$\textrm{cm}^2$eV.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.8
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• pp.560-564
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• 2003

Thick oxide layer was fabricated by anodic reaction and complex oxidation performed by combining low temperature thermal oxidation (50$0^{\circ}C$, 1 hr at $H_2O$/O$_2$) and a RTO (rapid thermal oxidation) process (105$0^{\circ}C$, 1 min). Electrical characteristics of OPSL (oxidized porous silicon layer) were almost the same as those of thermal silicon dioxide prepared at high temperature. The leakage current through the OPSL of 20${\mu}{\textrm}{m}$ thickness was about 100 - 500 ㎀ in the range 0 V to 50 V. The average value of breakdown field was about 3.9 MV/cm. From the XPS analysis, surface and internal oxide films of OPSL prepared by complex process were confirmed completely oxidized and also the role of RTO process was important for the densification of PSL (porous silicon layer) oxidized at low temperature.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.119-123
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• 2006

This work presents the fabrication and characteristics of $Bi_2O_3/Si$ heterojunction prepared by rapid thermal oxidation technique without any postdeposition annealing condition. The bismuth trioxide film was deposited onto monocrystalline Si and glass substrates by rapid thermal oxidation of bismuth film with aid of halogen lamp at $500^{\circ}C/\;45$ s in static air. The structural, optical and electrical properties of $Bi_2O_3$ film were investigated and compared with other published results. The structural investigation showed that the grown films are polycrystalline and multiphase (${\alpha}-Bi_2O_3$ and ${\beta}-Bi_2O_3$). Optical properties revealed that these films having direct optical band gap of 2.55 eV at 300 K with high transparency in visible and NIR regions. Dark and illuminated I-V, CV, and spectral responsivity of $Bi_2O_3/Si$ heterojunction were investigated and discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.51-54
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• 2009

Transparent Cuprous oxide film was deposited by rapid thermal oxidation (RTO) of Cu at $500^{\circ}C$/45s condition on textured single-crystal n-Si substrate to form $Cu_2O$/n-Si heterojunction photodiode. The Hall effect measurements for the $Cu_2O$ films showed a p-type conductivity. The photovoltaic and electrical properties of the junction at room temperature were investigated without any post-deposition annealing. I-V characteristics revealed that the junction has good rectifying properties. The C-V data showed abrupt junction and a built-in potential of 1 V. The photodiode showed good stability and high responsivity in the visible at three regions; 525 nm, 625-700 nm, and 750nm denoted as regions A, B, and C, respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.12
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• pp.59-64
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• 1991

Thin (25-103$\AA$) SiO$_2$ films are grown using the rapid thermal oxidation processing at temperatures of 105$0^{\circ}C$-115$0^{\circ}C$ for 5-30 sec, in order to investigate the characteristics of ultra thin oxide. For measuring the thickness of oxide TEM, ellipsometry, and C-V method which is taken in the condition of small surface band bending are used and compared. When neglecting the small deviation affected by both interface state and moisture charge effect, those three methods described above give similar results. In order to examine the effect of rapid thermal annealing, part of samples are annealed in N$_2$ ambient. MOS capacitors are fabricated and the characteristics of I-V and C-V are measured. Measurements show that the activation energy of initial thickness of oxide grown during the ramp-up time is of 1.125eV and the activation energy of the oxidation rate is of 0.98eV. As oxidation temperature is increased, dielectric breakdown field E$_{BD}$ is decreased due to the increase of fixed charge density N$_f$ However, E$_{BD}$ is shown to be decreased as increasing the thickness of oxide. The increase of N$_f$ in the early stage of thermal annealing results in the decrease of E$_{BD}$.

• Korean Chemical Engineering Research
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• v.46 no.2
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• pp.408-413
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• 2008

In this work, the use of LPRTO (low pressure rapid thermal oxidation) and remote plasma oxidation was evaluated for the preparation of ultra thin silicon oxide layer with less than 5 nm. The silicon oxide thickness grown by LPRTO was rapidly increased and saturated. The maximum thickness could be controlled at about 5 nm. As RF power and oxygen flow rate at a remote plasma oxidation increased, the behavior of oxide growth was almost the same as that of LPRTO. The oxide thickness of 4 nm was the maximum obtained by a remote plasma oxidation in this work. The quality of silicon oxide grown by LPRTO was comparable to the thermally grown conventional oxide.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.542-545
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• 1987

THE ELECTRICAL CHARACTERISTICS Of RAPID THERMAL OXIDES AND NITRIDED OXIDES HAVE BEEN INVESTIGATED. R.T.OXIDE FILMS HAVE BEEN PREPARED BY ONLY R.T. OXIDATION OR R.T.OXIDATION AND SUBSEQUENT R.T.ANNEAL. NITRIDED OXIDE FILMS HAVE BEEN PREPARED BY R.T.OXIDATION AND SUBSEQUENT R.T.NITRIDATION.AND CONVENTIONAL OXIDES ALSO HAVE BEEN PREPARED TO COMPARE WITH R.T.P OXIDES. R.T.ANNEALED OXIDES SHOW EXCELLENT BREAKDOWN FIELD. LEAKAGE CURRENT AND TDDB CHARACTERISTICS. ALSO, CAPACITANCE Of R.T NITRIDED OXIDES ARE SUPERIOR BY 10% TO CONVENTIONAL OXIDES, BUT TDDB CHARACTERISTIC ARE POORER THAN OXIDE FILMS.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.39-45
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• 2020

The Cu/Cu2O/CuO photoelectrode has been successfully fabricated by Rapid Thermal Annealing technique. The structural characterization of fabricated photoelectrode was performed using X-Ray diffraction, while elemental composition of the prepared material has been checked with X-Ray Photoelectron Spectroscopy. The synthesis parameters are optimized on the basis of photoelectrochemical performance. The best photoelectrochemical performance has been observed for the Cu/Cu2O/CuO photoelectrode fabricated at 550 ℃ oxidation temperature and oxidation time of 50 seconds with highest photocurrent density of -3 mA/㎠ at -0.13 V vs. RHE.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.5
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• pp.285-289
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• 2003

This paper proposes a 10 ${\mu}{\textrm}{m}$ thick oxide air-bridge structure which can be used as a substrate for RF circuits. The structure was fabricated by anodic reaction, complex oxidation and rnicrornachining technology using TMAH etching. High quality films were obtained by combining low temperature thermal oxidation (50$0^{\circ}C$, 1 hr at $H_2O$/O$_2$) and rapid thermal oxidation (RTO) process (105$0^{\circ}C$, 2 min). This structure is mechanically stable because of thick oxide layer up to 10 ${\mu}{\textrm}{m}$ and is expected to solve the problem of high dielectric loss of silicon substrate in RF region. The properties of the transmission line formed on the oxidized porous silicon (OPS) air-bridge were investigated and compared with those of the transmission line formed on the OPS layers. The insertion loss of coplanar waveguide (CPW) on OPS air-bridge was (about 1 dB) lower than that of CPW on OPS layers. Also, the return loss of CPW on OPS air-bridge was less than about - 20 dB at measured frequency region for 2.2 mm. Therefore, this technology is very promising for extending the use of CMOS circuitry to higher RF frequencies.