Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Growth and Properties of Ultra-thin SiO2 Films by Rapid Thermal Dry Oxidation Technique

급속 건식 열산화 방법에 의한 초박막 SiO2의 성장과 특성

  • 정상현 (청주대학교 정보통신공학부) ;
  • 김광호 (청주대학교 정보통신공학부) ;
  • 김용성 (청주대학교 정보통신공학부) ;
  • 이수홍 (세종대학교 전자정보통신공학부)
  • Published : 2004.01.01
Download PDF
⟨ Previous Next ⟩

Abstract

Ultra-thin silicon dioxides were grown on p-type(100) oriented silicon employing rapid thermal dry oxidation technique at the temperature range of 850∼1050 $^{\circ}C$. The growth rate of the ultra-thin film was fitted well with tile model which was proposed recently by da Silva ＆ Stosic. The capacitance-voltage, current-voltage, characteristics were used to study the electrical properties of these thin oxides. The minimum interface state density around the midgap of the MOS capacitor having oxide thickness of 111.6 $\AA$ derived from the C-V curve was ranged from 6 to 10${\times}$10$^{10}$ /$\textrm{cm}^2$eV.

Keywords

References

  1. IEEE Trans. Electron Devices v.47 Reliability of ultrathin silicon dioxide under combined substrate hot-electron and constant voltage stress E.M.Vogel;J.S.Suehle;M.D.Edelstein;B.Wang;Y.Chen;J.B.Bernstein https://doi.org/10.1109/16.842960
  2. IEEE IEDM'96 Tech. Digest Gate Oxide Scaling Limits and Projections C.Hu
  3. 전기전자재료학회논문지 v.8 no.5 초박막 산화막 MOS 캐패시터에서 전자파 간섭의 극성 효과 강정진
  4. Nature v.384 Silicon-based light emitting devices integrated into micro electronic circuits K.D.Hirschman;L.Tsybeskov;S.P.Duttagupta;P.M.Fauchet https://doi.org/10.1038/384338a0
  5. Progress in Photovoltaics v.9 Third generation photovoltaic s: Ultra-High conversion efficiency at low cost M.A.Green https://doi.org/10.1002/pip.360
  6. Silicon Processing for the VLSI Era v.4 S.Woof
  7. 전기전자재료학회 논문지 v.16 no.3 게이트 산화막 어닐링을 이용한 서브 마이크론 PMOS 트랜지스터의 NBTI 향상 김영민 https://doi.org/10.4313/JKEM.2003.16.3.181
  8. Silicon Processing for the VLSI Era v.1 S.Wolf;R.N.Tauber
  9. 전기전자재료학회 논문지 v.4 no.2 금속 열처리 방법으로 성장한 재 산화된 질화 산화막의 전기적 특성 향상 양광선;손문희;박훈수;김봉열
  10. J. Appl. Phys v.36 General relationship for the thermal oxidation of silicon B.E.Deal;A.S.Grove https://doi.org/10.1063/1.1713945
  11. Semicond. Sci. Technol. v.10 Growth kinetics of thermal SiO₂ thin films M.A.F.Gomes;E. F. da Silva, Jr;J.A.Aguiar https://doi.org/10.1088/0268-1242/10/7/022
  12. Semicond. Sci. Technol. v.12 Simulation of the early stages of thin SiO₂ films growth E. F. da Silva, Jr;B.D.Stosic https://doi.org/10.1088/0268-1242/12/8/018
  13. Semicond. Sci. Technol. v.15 Effect of post-oxidation annealing of the oxynitride on the C-V and G-V characteristics of Al/thin oxynitride/n-Si tunnel diodes V.K.Bhat;K.N.Bhat;A.Subrahamanyam https://doi.org/10.1088/0268-1242/15/9/301
  14. Plenum The Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface J.Maserjian;C.Helms(ed.);B.E.Deal(ed.)
  15. IEEE Electron Devices Letter v.15 no.11 Breakdown characteristics of RTO 10 nm SiO₂ films grown at different temperatures L.Fonseca;F.Campabadal https://doi.org/10.1109/55.334663
  16. Semiconductor Material and Device Characterization D.K.Schroder