Effects of the Doping Concentration of the Floating Gate on the Erase Characteristics of the Flash EEPROM's (Flash EEPROM에서 부유게이트의 도핑 농도가 소거 특성에 미치는 영향)
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- Journal of the Korean Institute of Telematics and Electronics D
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- v.36D no.11
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- pp.56-62
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- 1999