• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2052-2054
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• 2005

TFT-LCD requires to use poly silicon for High resolution and High integration. Thin film make of Poly silicon on the excimer laser-induced crystallization of PECVD(plasma-enhanced chemical vapor deposition)-grown amorphous silicon. In the thin film hydrogen affects to a device performance from bad elements like eruption, void and etc. So dehydrogenation prior to laser exposure was necessary. In this study, use RTP(Rapid Thermal Process) at various temperature from $670^{\circ}C$ to $750^{\circ}C$ and fabricate poly-silicon. it propose optimized RTP window to compare grain size to use poly silicon's SEM pictures and crystallization to analyze Raman curved lines.

• Journal of Ceramic Processing Research
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• 제19권5호
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• pp.439-443
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• 2018

The outstanding characteristics of high quality GaN single crystal substrates make it possible to apply the manufacture of high brightness light emitting diodes and power devices. However, it is very difficult to obtain high quality GaN substrate because the process conditions are hard to control. In order to effectively control the formation of GaN polycrystals during the bulk GaN single crystal growth by the HVPE (hydride vapor phase epitaxy) method, a quartz ring was introduced in the edge of substrate. A variety of evaluating method such as high resolution X-ray diffraction, Raman spectroscopy and photoluminescence was used in order to measure the effectiveness of the quartz ring. A secondary ion mass spectroscopy was also used for evaluating the variations of impurity concentration in the resulting GaN single crystal. Through the detailed investigations, we could confirm that the introduction of a quartz ring during the GaN single crystal growth process using HVPE is a very effective strategy to obtain a high quality GaN single crystal.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.105-109
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• 2022

For the realization of higher reliable transition metal dichalcogenide layer, molybdenum disulfide was formed on sapphire substrate by direct current sputtering and subsequent rapid thermal annealing process. Unlike RF sputtered MoS₂ thin films, DC sputtered showed no irregular holes and protrusions after annealing process from scanning electron microscope images. From atomic force microscope results, it was possible to investigate that surface roughness of MoS₂ thin films were more dependent on DC sputtering power then annealing temperature. On the other hand, the Raman scattering spectra showed the dependency of significant E¹_2g and A¹_g peaks on annealing temperatures.

• Tribology and Lubricants
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• 제35권6호
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• pp.362-368
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• 2019

In this study, mechanical and tribological properties were investigated by varying the process temperature (50, 100, 125 and 150℃) to reduce internal stress. The internal stress reduction by thermal dissociation ta-C coating film with increasing temperature is confirmed through the curvature radius of the ta-C coating according to the temperature of the SUS plate. As the coating temperature increased, the mechanical properties (hardness, modulus, toughness) deteriorated, which is in agreement with the Raman analysis results. As the temperature increased, the sp² phase ratio increased owing to the dissociation of the sp³ phase. The friction and wear properties are related to the process temperature during ta-C coating. Low friction and wear properties are observed in high hardness samples manufactured at 50℃, and wear resistance properties decreased with increasing temperature. The contact area is expected to increase owing to the decrease of hardness(72 GPa to 39 GPa) and fracture toughness with increasing temperature which accelerated wear because of the debris generated. It was confirmed that at process temperature of over than 100℃, the bond structure of the carbon film changed, and the effect of excellent internal stress was reduced. However, the wear resistance simultaneously decreased owing to the reduction in fracture toughness. Therefore, in order to increase industrial utilization, optimum temperature conditions that reduce internal stress and retain mechanical properties.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.313-313
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• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.

• Progress in Superconductivity
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• 제6권2호
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• pp.118-123
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• 2005

A low cost YBCO oxide powder was employed as a starting precursor for MOD process. YBCO oxide is advantageous over metal acetates or TFA salts which are popular starting precursors for conventional MOD-TFA process because that YBCO oxide precursor is cheap and easy to control molar ratio. YBCO thin films were prepared by this oxide-precursor-based MOD process and annealing condition was optimized. The YBCO thin film annealed at below $780^{\circ}C$ shows no transport $I_c$ and poor microstructure. Raman spectroscopic study of YBCO thin film indicates that YBCO thin film prepared at below $780^{\circ}C$ contains a number of imperfections such as non-superconducting $BaCuO_2$ phase, cation disorder, etc. However, the YBCO thin film treated at above $800^{\circ}C$ shows improvement in microstructure and current transport properties. This research was supported by a grant from Center for Applied Superconductivity Technology of the 21st Century Frontier R&D Program funded by the Ministry of Science and Technology, Republic of Korea.

• Current Photovoltaic Research
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• 제3권3호
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• pp.80-84
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• 2015

We suggest new emitter formation method using solid-phase epitaxy (SPE); solid-phase epitaxy emitter (SEE). This method expect simplification and cost reduction of process compared with furnace process (POCl3 or BBr3). The solid-phase epitaxy emitter (SEE) deposited a-Si:H layer by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) on substrate (c-Si), then thin layer growth solid-phase epitaxy (SPE) using rapid thermal process (RTP). This is possible in various emitter profile formation through dopant gas ($PH_3$) control at deposited a-Si:H layer. We fabricated solar cell to apply solid-phase epitaxy emitter (SEE). Its performance have an effect on crystallinity of phase transition layer (a-Si to c-Si). We confirmed crystallinity of this with a-Si:H layer thickness and annealing temperature by using raman spectroscopy, spectroscopic ellipsometry and transmission electron microscope. The crystallinity is excellent as the thickness of a-Si layer is thin (~50 nm) and annealing temperature is high (<$900^{\circ}C$). We fabricated a 16.7% solid-phase epitaxy emitter (SEE) cell. We anticipate its performance improvement applying thin tunnel oxide (<2nm).

• 한국세라믹학회지
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• 제56권3호
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• pp.284-290
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• 2019

Ternary MoS₂/graphene (G)-TiO₂ photocatalysts were prepared by a simple hydrothermal method. The morphology, phase structure, band gap, and catalytic properties of the prepared samples were investigated by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, UV-vis spectrophotometry, and Brunauer-Emmett-Teller surface area measurement. The H₂ production efficiency of the prepared catalysts was tested in methanol-water mixture under visible light. MoS₂/G-TiO₂ exhibited the highest activity for photocatalytic H₂ production. For 5 wt.% and 1 wt.% MoS₂ and graphene (5MT-1G), the production rate of H₂ was as high as 1989 µmol^-1h^-1. The catalyst 5MT-1G showed H₂ production activity that was ~ 11.3, 5.6, and 4.1 times higher than those of pure TiO₂, 1GT, and 5MT, respectively. The unique structure and morphology of the MoS₂/G-TiO₂ photocatalyst contributed to its improved hydrogen production efficiency under visible light.

• 한국의류산업학회지
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• 제24권1호
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• pp.138-145
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• 2022

Today, graphene loaded textiles are being considered promising smart clothing due to their high conductivity. In this study, we reported reduced graphene oxide(r-GO) deposited pure cotton fabrics fabricated with a colloidal solution of graphene(GO), using a one-step aerosol spray pyrolysis(ASP) process and their potential application on smart textiles. The ASP process is advantageous in that it is easily implementable and can be applied for continuous processing. Moreover, this process has never been applied to deposit r-GO on pure cotton fabric. The field emission-scanning microscopy (FE-SEM) observation, Fourier transform-infrared(FT-IR) analysis, Raman spectroscopy, X-ray diffraction(XRD) analysis, and ultraviolet transmittance(UVT) were used to evaluate material properties of the r-GO colloids. The resistance was also measured to evaluate the electrical conductivity of the specimens. The results revealed that the r-GO was successfully deposed on specimens, and the specimen with the highest electrical conductivity demonstrated an electrical resistance value of 2.27 kΩ/sq. Taken together, the results revealed that the ASP method demonstrated a high potential for effective deposition of r-GO on cotton fabric specimens and is a prospect for the development of conductive cotton-based smart clothing. Therefore, this study is also meaningful in that the ASP process can be newly applied by depositing r-GO on the pure cotton fabric.

• 한국산학기술학회논문지
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• 제19권9호
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• pp.536-542
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• 2018

이산화주석은 Rutile 구조를 갖는 Oxygen-Deficient n-type 반도체 물질로서, $H_2$, CO, $CO_2$ 등의 가스 분자가 표면에 흡착되면 전기저항이 변하는 특성을 가지고 있고, 이러한 성질을 활용하면 다양한 가스의 감지가 가능하기 때문에 가스센서로 연구가 활발히 이루어지고 있다. 나노구조물의 경우 Bulk 상태보다 체적 대비 표면적비가 높기 때문에 기체의 흡착이 유리하고, 가스 센서의 성능이 향상될 수 있다. 본 연구에서는 Thermal CVD 공정을 이용하여 SnO Nanoplatelet을 Si 기판위에 Dense하게 성장시켰다. 기상 수송 방법(Vapor Transport Method)으로 성장된 SnO 나노구조물을 Thermal CVD System을 이용하여 산소분위기에서 $830^{\circ}C$ 및 $1030^{\circ}C$에서 열처리(Post-Annealing)하여 $SnO_2$ 상(Phase)을 갖도록 하였다. 열처리 과정동안 쳄버의 압력을 4.2 Torr로 일정하게 유지시켰다. 열처리 된 SnO 나노구조물의 결정학적 특성을 Raman Spectroscopy 및 XRD 분석을 통하여 확인하였고, 형태학적 변화를 주사전사현미경(Scanning Electron Microscopy)을 통하여 확인하였다. 분석결과 SnO 나노구조물은 열처리 과정을 통하여 $SnO_2$ 나노구조물로 상변환 되었다.