• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.5-5
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• 2011

Raman spectroscopy has become one of the most widely used tools in graphene research. The resonant Raman scattering process that gives rise to the observed strong Raman signal carries information regarding the electronic structure as well as the structural properties. When polarization of the incident excitation laser light or the scattered signal is carefully controlled, more information on the electronic and structural properties becomes available. In this tutorial, the basics of polarized Raman scattering experiments will be introduced first. Then several examples from real research will be highlighted to illustrate the application of polarized Raman spectroscopy in graphene research.

• Carbon letters
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• v.9 no.2
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• pp.127-130
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• 2008

This study aims to find a correlation between XRD and Raman result of the activated carbon fibers as a function of its activation degrees. La of the isotropic carbon fiber prepared by oxidation in carbon dioxide gas have been observed using laser Raman spectroscopy. The basic structural parameters of the fibers were evaluated by XRD as well, and compared with Raman result. The La of the carbon fibers were measured to be 25.5 ${\AA}$ from Raman analysis and 23.6 ${\AA}$ from XRD analysis. La of the ACFs were 23.6 ${\AA}$ and 20.4 ${\AA}$, respectively, representing less ordered through activation process. It seems that the $I_D/I_G$ of Raman spectra were related to crystallite size(La). Raman spectroscopy has demonstrated its unique ability to detect structural changes during the activation of the fibers. There was good correlation between the La value obtained from Raman and XRD.

• Journal of the Korean Electrochemical Society
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• v.5 no.4
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• pp.221-225
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• 2002

Assisted by the highly sensitive confocal microprobe Raman spectrometer and proper surface roughening procedure, the Raman investigation on the adsorption and reaction of methanol was performed on Pt-Ru electrodes with different coverages. A detailed description of the roughening process of the Pt electrodes and the underpotential deposition of the Ru was given. Reasonably good Raman signal reflecting the metal-carbon vibration and CO vibration was detected. The appearance of vibrations of the Ru oxides, together with the existence of Ru-C, Pt-C and CO bands, clearly demonstrates the participation of the bi-functional mechanism during the oxidation process of methanol on Pt-Ru electrodes. The Pt-Ru electrode was found to have a higher catalytic activity over Pt electrodes. This preliminary study shows that electrochemical Raman spectroscopy can be applied to the study of rough electrode surface.

• Carbon letters
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• v.10 no.1
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• pp.38-42
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• 2009

This study aims to find a correlation between XRD and Raman result of the oxidized high modulus carbon fibers as a function of its oxidation degrees, and compare with the isotropic carbon fiber reported early. La of the high modulus carbon fiber prepared by oxidation in carbon dioxide gas have been observed using laser Raman spectroscopy. The basic structural parameters of the fibers were evaluated by XRD as well. The La of the original high modulus carbon fibers were measured to be 144 ${\AA}$ from Raman analysis and 135 ${\AA}$ from XRD analysis. La of the 92% oxidized fiber were 168 ${\AA}$ by using Raman and 182 ${\AA}$ by using XRD. There was some correlation between the La value obtained from Raman and XRD. However the La value changes of the high modulus carbon fiber through whole oxidation process showed opposite tendency compare with the isotropic carbon fiber because of the fiber structure basically.

• Current Photovoltaic Research
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• v.4 no.1
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• pp.21-24
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• 2016

Chalcopyrite based (CIGS) thin films have considered to be a promising candidates for industrial applications. The growth of quality CIGS thin films without secondary phases is very important for further efficiency improvements. But, the identification of complex secondary phases present in the entire film is crucial issue due to the lack of powerful characterization tools. Even though X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and normal Raman spectroscopy provide the information about the secondary phases, they provide insufficient information because of their resolution problem and complexity in analyzation. Among the above tools, a normal Raman spectroscopy is better for analysis of secondary phases. However, Raman signal provide the information in 300 nm depth of film even the thickness of film is > $1{\mu}m$. For this reason, the information from Raman spectroscopy can't represent the properties of whole film. In this regard, the authors introduce a new way for identification of secondary phases in CIGS film using depth Raman analysis. The CIGS thin films were prepared using DC-sputtering followed by selenization process in 10 min time under $1{\times}10^{-3}torr$ pressure. As-prepared films were polished using a dimple grinder which expanded the $2{\mu}m$ thick films into about 1mm that is more than enough to resolve the depth distribution. Raman analysis indicated that the CIGS film showed different secondary phases such as, $CuIn_3Se_5$, $CuInSe_2$, InSe and CuSe, presented in different depths of the film whereas XPS gave complex information about the phases. Therefore, the present work emphasized that the Raman depth profile tool is more efficient for identification of secondary phases in CIGS thin film.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.614-619
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• 2012

We investigated color and graphite layer formation on the surface of Type I tinted brown diamonds exposed for 5 minutes under a high-pressure high-temperature (HPHT) condition in a stable graphite regime. We executed the HPHT processes of Process I, varying the temperature from $1600^{\circ}C$ to $2300^{\circ}C$ under 5.2 GPa pressure for 5 minutes, and Process II, varying the pressure from 4.2 to 5.7 GPa at $2150^{\circ}C$ for 5 minutes. Optical microscopy and micro-Raman spectroscopy were used to check the microstructure and surface layer phase evolution. For Process I, we observed a color change to vivid yellow and greenish yellow and the growth of a graphite layer as the temperature increased. For Process II, the graphite layer thickness increased as the pressure decreased. We also confirmed by 531 nm micro-Raman spectroscopy that all diamonds showed a $1440cm^{-1}$ characteristic peak, which remained even after HPHT annealing. The results implied that HPHT-treated colored diamonds can be distinguished from natural stones by checking for the existence of the $1440cm^{-1}$ peak with 531 nm micro-Raman spectroscopy.

• Journal of the Korean institute of surface engineering
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• v.57 no.2
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• pp.71-85
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• 2024

This article provides an overview of Raman spectroscopy and its practical applications for surface analysis of semiconductor processes including real-time monitoring. Raman spectroscopy is a technique that uses the inelastic scattering of light to provide information on molecular structure and vibrations. Since its inception in 1928, Raman spectroscopy has undergone continuous development, and with the advent of SERS(Surface Enhanced Raman Spectroscopy), TERS(Tip Enhanced Raman Spectroscopy), and confocal Raman spectroscopy, it has proven to be highly advantageous in nano-scale analysis due to its high resolution, high sensitivity, and non-destructive nature. In the field of semiconductor processing, Raman spectroscopy is particularly useful for substrate stress and interface characterization, quality analysis of thin films, elucidation of etching process mechanisms, and detection of residues.

• Analytical Science and Technology
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• v.5 no.4
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• pp.359-366
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• 1992

Using micro-Raman spectrometer, we investigated the evaluation of microstress on silicon surface after the local thermal oxidation. The induced stress of silicon surface after local thermal oxidation shows maximum value at the interface of silicon oxide and active area. The smaller the size of active area, the larger stress. From the evaluation of three other device isolation processes, A, B and moB, whose active size has $0.45{\mu}m$ in length, moB process is turned out to have the lowest stress value and the smallest bird's beak effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.203-203
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• 2014

Due to the electrical properties such as narrow bandgap and high carrier mobility, indium antimonide (InSb) has attracted a lot of attention recently. For the fabrication of electronic or photonic devices, an etching process is required. However, during etching process, enegetic ions can induce structural damages on the bombarded surface. Especially, InSb has a very weak binding energy between In atom and Sb stom, it can be easily damaged by impingement of ions. In the previous work, to evaluate the surface properties after Ar ion beam etching, the plasma-induced structural damage on the etched InSb(100) surface had been examined by resonant Raman spectroscopy. As a result, we demonstrated the relation between the enhanced transverse optical(TO) peak in the Raman spectrum and the ion-induced structral damage near the InSb surface. In this work, the annealing effect on the etched InSb(100) surface has investigated. Annealing process was performed at $450^{\circ}C$ for 10 minute under antimony ambient. As-etched InSb(100) surface had shown a strongly enhanced TO scattering intensity in the Raman spectrum. However, the annealing process with antimony flowing caused the intensity to recover due to the structural reordering and the reduction of antimony vacancies. It proves that the origin of enhanced TO scattering is Sb vacancies. Furthermore, it shows that etching-induced damage can be cured effectively by the following annealing process under Sb ambient.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.1
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• pp.113-118
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• 2010

A straight pipe is used after complicated bending work in a mechanical system. In this work process, the plastic deformation of the pipe produces residual stress in the pipe. This residual stress significantly affects the behavior of pipe fracture. For this reason, residual stress must be evaluated. Measuring the residual stress of a U-shaped pipe is difficult with existing destructive and nondestructive measurement methods. In this paper, the residual stress of a U-shaped aluminum pipe (99.7% pure aluminum) was evaluated from the Raman shift by Raman spectroscopy and FEM(Finite Element Method, FEM) analysis. The results of the stiffness test by FEM analysis are compared with those by experiments. The analyzed results of the Raman spectra showed a similar tendency with the results of the FEM analysis with respect to the residual stress distributions in U-shaped pipes. Also, the results of the bending tests showed resemblance to each other.