• Korean Journal of Materials Research
• /
• v.28 no.5
• /
• pp.279-285
• /
• 2018

Graphene is an interesting material because it has remarkable properties, such as high intrinsic carrier mobility, good thermal conductivity, large specific surface area, high transparency, and high Young's modulus values. It is produced by mechanical and chemical exfoliation, chemical vapor deposition (CVD), and epitaxial growth. In particular, large-area and uniform single- and few-layer growth of graphene is possible using transition metals via a thermal CVD process. In this study, we utilize polystyrene and boron oxide, which are a carbon precursor and a doping source, respectively, for synthesis of pristine graphene and boron doped graphene. We confirm the graphene grown by the polystyrene and the boron oxide by the optical microscope and the Raman spectra. Raman spectra of boron doped graphene is shifted to the right compared with pristine graphene and the crystal quality of boron doped graphene is recovered when the synthesis time is 15 min. Sheet resistance decreases from approximately $2000{\Omega}/sq$ to $300{\Omega}/sq$ with an increasing synthesis time for the boron doped graphene.

• Journal of the Korean Chemical Society
• /
• v.38 no.3
• /
• pp.179-185
• /
• 1994

The Raman stretching frequency of nitrile group was affected by change of solvents and its in concentration in same solvent. In the case of acetonitrile, nitrile group stretching frequencies were observed in the region of 2247.3∼2254.9 cm-1 with various solvents. While in benzonitrile, they were found in the region of 2226.1∼2230.3$ cm^{-1}. With the addition of water in acetonitrile,νC≡N was shifted to high frequency from 2250.1 cm^{-1} in pure acetonitrile to 2257.7 cm^{-1} in 90% water forwhich had with higher volume % of water caused higher hydrogen-bonded equilibrium between methyl protons and water. The νC≡N frequency for nitrile group was shifted to high frequency by solvent inductive effect with the increasing mixed solvent (CHCl_3/CCl_4)$mole% ratio.

• Current Photovoltaic Research
• /
• v.1 no.1
• /
• pp.27-32
• /
• 2013

We investigated the growth mechanism of amorphous-phase Si thin films in order to improve the film characteristics and circumvent photo-degradation effects by implementation of hot-wire chemical vapor deposition. Amorphous silicon thin films grown in a silane/hydrogen mixture can be decomposed by a resistive heat filament. The structural properties were observed by Raman spectroscopy, FTIR, SEM, and TEM. The electrical properties of the films were measured by photo-conductivity, dark-conductivity, and photo-sensitivity. The contents of Si-H and $Si-H_n$ bonds were measured to be 19.79 and 9.96% respectively, at a hydrogen flow rate of 5.5 sccm, respectively. The thin film has photo-sensitivity of $2.2{\times}10^5$ without a crystalline volume fraction. The catalyst behavior of the hot-wire to decompose the chemical precursors by an electron tunneling effect depends strongly on the hydrogen mixture rate and an amorphous Si thin film is formed from atomic relaxation.

• Bulletin of the Korean Chemical Society
• /
• v.31 no.10
• /
• pp.2909-2912
• /
• 2010

Hydrogenated microcrystalline silicon (${\mu}c$-Si:H) thin film for solar cells is prepared by plasma-enhanced chemical vapor deposition and physical properties of the ${\mu}c$-Si:H p-layer has been investigated. With respect to stable efficiency, this film is expected to surpass the performance of conventional amorphous silicon based solar cells and very soon be a close competitor to other thin film photovoltaic materials. Silicon in various structural forms has a direct effect on the efficiency of solar cell devices with different electron mobility and photon conversion. A Raman microscope is adopted to study the degree of crystallinity of Si film by analyzing the integrated intensity peaks at 480, 510 and $520\;cm^{-1}$, which corresponds to the amorphous phase (a-Si:H), microcrystalline (${\mu}c$-Si:H) and large crystals (c-Si), respectively. The crystal volume fraction is calculated from the ratio of the crystalline and the amorphous phase. The results are compared with high-resolution transmission electron microscopy (HR-TEM) for the determination of crystallinity factor. Optical properties such as refractive index, extinction coefficient, and band gap are studied with reflectance spectra.

• Journal of Hydrogen and New Energy
• /
• v.16 no.4
• /
• pp.343-349
• /
• 2005

In this study, We had surface-treated single-walled carbon nanotubes (SWNTs) for improving hydrogen storage capacity. The SWNTs were treated by heat treatment, acid treatment and fluorinated at various temperatures. The SWNTs were characterized by Raman spectroscopy and TEM and estimated hydrogen storage capacities at 303K. As shown Raman spectra and TEM images, the structure of fluorinated SWNTs were stable at 423K but changed to the MWNTs-like structure or onion structure over 523K. Hydrogen storage capacity of SWNTs fluorinated at 423K was remarkably increased 2.6 times than that of pristine SWNTs. For SWNTs fluorinated at 573K, the amount of hydrogen adsorbed wasn't increased compared with SWNTs fluorinated at 423K. Therefore, high hydrogen storage capacity of SWNTs could be archived by fluorinated condition at 423K, which was not changed SWNT structure.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.12
• /
• pp.4093-4097
• /
• 2012

We introduced a new UV-cured resin polymer gel as an electrolyte for dye-sensitized solar cells (DSSCs) that is cured with UV irradiation to form a thin film of UV-cured resin polymer gel in the cells. The gel film was characterized and its potential for use as an electrolyte in DSSCs was investigated. This new UV-cured resin polymer gel was successfully applied as a gel polymer electrolyte in DSSCs overcoming the problems associated with the liquid electrolytes in typical DSSCs. The effect of ${\gamma}$-butylrolactone (GBL) on the long-term stability and photovoltaic performance in DSSCs using this UV-cured resin polymer gel electrolyte was also investigated. The results of the energy conversion efficiency, ionic conductivity and Raman spectra of the UV-cured resin polymer gel electrolyte with the addition of 6 wt % GBL to the UV-cured resin polymer electrolyte showed good long-term stability and photovoltaic performance for the DSSCs with the UV-cured polymer gel electrolyte.

• Archives of Pharmacal Research
• /
• v.4 no.2
• /
• pp.75-84
• /
• 1981

As the cetyltrimenthy ammonium bromide (CTAB) concentration increases to $2{\times}10^{-4}$/M the absorption maximum of ethyl orange (EO) makes a blue shift from 475 mm to 395 mm. At higher concentration of CTAB than $2{\times}10^{-4}$ / M the absorption maximum shifts to higher wavelength than 395 nm. A new peak at 395 nm is shown to result from the mixed micelle due to dye stacking interaction rather than from a change in dye geometry. Because Raman spectra of EO on interaction with varying amount of CTAB are similar to that of EO in water. EO retains trans azo type on interaction with CTAB. There is a change of c.m.c.s. of CTAB for the mixed micelle in the presence of salt. The effect of added salt on C. M. C. of CTAB for the mixed micelle is given that the logarithm of the c. m. c. is a linear function of the logarithm of the sum of the c. m. c. and the concentration of added salt.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.05a
• /
• pp.76-79
• /
• 2005

$Nd:YVO_4$ 연속발진 레이저(CW laser:Continuous wave laser)로 제작한 다결정 실리콘 박막의 이온도핑 효과를 조사하였다. PECVD로 증착한 비정질 실리콘 박막을 CW 레이저를 조사하여 결정화한 후 $B_2H_6$ 플라즈마 이온 도즈량을 변화시켜 이온 도핑을 하고 급속열처리 방법과 퍼니스 어닐링 방법으로 도펀트 활성화를 하였다. 이온 도핑된 CW 다결정 실리콘 박막의 이온 도즈량에 따른 판저항 변화를 비교하고, 급속열처리(RTA: Rapid Thermal Annealing)와 퍼니스 어닐링(FA: Furnace Annealing) 전후의 결정성 변화를 라만 스펙트럼(Raman spectrum) 을 통하여 분석하였다. 이온 도즈량이 증가함에 따라 판저항은 감소하고, 어닐링 후 이온 도핑에 의해 손상된 박막이 복원됨을 확인 할 수 있다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.97-97
• /
• 2000

In this thesis, the metastable state diamond thin films have been deposited on Si substrates from methane-hydrogen and oxygen mixture using Microwave Plasma Enhanced Chemical Vapor deposition (MWPCVD) method. Effects of each experimental parameters of MWPCVD including methane concentrations, oxygen additions, operating pressure, deposition time, etc. on the growth rate and crystallinity were investigated. SEM, XRD, and Raman spectroscopy were employed to analyze the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non-diamond phases respectively. As a methane concentration below 4%, the deposited films having well-defined facets could be obtained. As the methane concentration increases over 4%, the shape of films gradually changed into a amorphos form. The best crystallinity of the film at 3% in the Raman spectroscopy. Addition of oxygen to the methane-hydrogen mixture gave an improved film crystallinity at 50% oxygen concentration due to its more effectiveness in the selective removal of the non-diamond phased compared to the of H atom. on the contrary, the growth rate generally decreased by oxygen to from the more stable CO and CO2 is responsible for such an effect. Upon increasing the operating pressure and time, increased of growth rate and crystallinity were increased simultaneously.

• Journal of Surface Science and Engineering
• /
• v.54 no.3
• /
• pp.124-132
• /
• 2021

Graphene which grown on the cobalt or nickel sputtered copper foil depending on the annealing time was studied. Graphene on the copper foil grown by chemical vapor deposition was compared to those on cobalt or nickel sputtered copper foil by using a RF (Radio Frequency) magnetron sputtering at room temperature. FLG(few-layer graphene) was identified independent of substrates by Raman and X-Ray Photoelectron Spectroscopy analyses. On copper foil, size and area fraction of the graphene growth increased until 30 minutes annealing and then didn't changed. Comparing to that, graphene on the cobalt refined till 50 minutes annealing, after then the effect disappeared which means a similar shape to that on copper foil. On nickel the graphene refined irrespective of annealing time that is possibly because of the complete solid solution of nickel with copper.