• 한국진공학회지
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• 제13권1호
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• pp.34-38
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• 2004

핫엠보싱 기술을 이용하여 고분자 광도파로를 제작하기 위해서는 핫엠보싱 마스터가 필수적이며, 본 연구에서는 deep-RIE 공정에 의해 실리콘 마스터를 제작하였다. 광도파로의 광손실과 직접 연관이 있는 실리콘 마스터의 측면 거칠기를 최소화하기 위해 deep-RIE 공정 수행 후, 온도 $1050^{\circ}C$에서 $H_2/O_2$ 분위기하에 산화층을 각각 400$\AA$, 1000$\AA$, 3000$\AA$, 4500$\AA$, 5600$\AA$ 및 6200$\AA$ 두께로 형성하였으며, 곧바로 $NH_4$F:HF=6:1 BOE를 사용하여 산화층을 제거하였다. 제작된 마스터의 측면 거칠기를 SPM-AFM을 이용하여 측정하였으며, 측면 거칠기가 scallop 부분의 경우, 산화층 형성과 제거 후, 12nm (RMS)에서 최소 약 6nm (RMS)로 개선되었으며, vertical striation부분은 162nm (RMS)에서 최소 39m (RMS)로 개선됨을 확인하였다.

• Transactions on Electrical and Electronic Materials
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• 제8권2호
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• pp.58-66
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• 2007

In this paper, the process effect on the RMS roughness of the $HfO_2$ thin films grown by metal organic molecular beam epitaxy was investigated. The measured RMS roughness is examined to characterize the surface morphology. In order to analyze the factor effects, the significant factors of both the main and the interaction effects were extracted through the effect analysis. In order to compare the regression model with the variable transformation, the effect of each factor and the model efficiency are calculated. The methodology can allow us to analyze the effects between the process parameters related to the process variability.

• 대한원격탐사학회:학술대회논문집
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• 대한원격탐사학회 2006년도 Proceedings of ISRS 2006 PORSEC Volume I
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• pp.520-523
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• 2006

Whereas it is well known that the surface roughness parameters, the RMS height and the correlation length, of a natural soil surface are underestimated with a short surface profile, it is not clear how much the underestimated surface parameters affect the backscattering coefficients of the surface for various incidence angles and polarizations. The backscattering coefficients of simulated and measured surface profiles are computed using the integral equation method (IEM) and analyzed in this paper to answer this question. It is shown that the RMS error of the backscattering coefficients between 5-m- and 1-m-long measured surface profiles is 1.7 dB for vv-polarization and 0.5 dB for hh-polarization at a medium range of incidence angle ($15^{\circ}{\leq}{\theta}{\leq}70^{\circ}$), while the surface roughness parameters are significantly reduced; from 2.4 cm to 1.5 cm for the RMS height s and from 35.1 cm to 10.0 cm for the autocorrelation length l. This result is verified with numerous simulations with various roughness conditions and various wavelengths.

• 한국전기전자재료학회논문지
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• 제27권7호
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• pp.458-461
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• 2014

TiC thin films were deposited on Si wafer by unbalanced magnetron sputtering (UBMS) system with two targets of graphite and titanium. During the TiC sputtering, the RF power was varied from 100 W to 175 W and the physical and electrical properties of TiC films were investigated. The hardness and rms surface roughness of TiC films were improved with increasing RF power and the maximum hardness about 24 GPa and the minimum rms surface roughness about 1.2 nm were obtained. The resistivity of TiC films was decreased with increasing RF power. Consequently, the physical and electrical properties of TiC film wewe improved with increasing RF power.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 추계학술대회 논문집
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• pp.332-335
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• 1997

With the advance of precision technique, the optical system is more precise and complex and the machining method of optical element which is composed of micro-grooves is developed. Especially, the method of micro-grooving using diamond tool is used widely owing to many merit, but has problems of damage of surface roughness due to tool wear and tool fracture. This paper deals with state monitoring using AE RMS in the micro-grooving. The change of AE RMS is very small with increment of cutting velocity and depth of cut. In spite of constance magnitude of principal force in machining using diamond tool of tool wear and tool fracture, AE RMS is highly fluctuated. Because changing of cutting state has relevance to surface roughness profile, surface toughness profile is expected using AE RMS.

• 터널과지하공간
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• 제12권4호
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• pp.268-276
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• 2002

In this study, a 3D coordinate measurement system equipped with a laser displacement meter for digitizing rock joint surface was established and the digitized data were used to calculate several roughness parameters. The parameters used in this study were micro avenge inclination $angle(i_{ave})$, average slope of joint $asperity(SL_{ ave})$, root mean square of $i-angle(i_{rms})$, standard deviation of height(SDH), standard deviation of $i-angle(SD_i)$, roughness profile $index(R_P)$, and fractal dimension(D). The relationships between the roughness parameters based on the digitzation of the surface profile were analyzed. Since the measured value varied according to the degree of reflection and the variation of colors at the measuring point, rock joint surface was painted in white to minimize the influence of the surface conditions. The comparison of the measured values and roughness parameters before and after painting revealed the better consequence from measurement on the painted surfaces. Also, effect of measuring interval was studied. As measured interval was increased, roughness parameters were exponentially decreased. The incremental sequence of degree of decrease was $SDH\; i_{ave},\; i_{rms},\; SD_i,\;and\; R_ p-1$. As a result of comparison of parameters from pin-type measurement system and laser type measurement system, all value of parameters were higher when laser-type measurement system was used, except SDH.

• International Journal of Precision Engineering and Manufacturing
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• 제7권1호
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• pp.9-12
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• 2006

A spectral analysis and numerical simulation are employed to assess the effects of the stylus tip radius on measuring surface profiles. Original profiles with fractal spectral densities are generated and then are numerically traced with circular tipped stylus. Instead of their spectral densities, the accumulative power spectrums of traced profiles are analyzed. It is shown that the minimum wavelength of traced profile relates directly to the radius r of the stylus tip and the root-mean-square (rms) roughness ${\sigma}_o$ of original profile. From this accumulation spectral analysis, a formula is developed to estimate the minimum wavelength of traced profile. By using the concept of the minimum wavelength, an appropriate stylus tip radius can be chosen for the given rms roughness ${\sigma}_o$ of the profile.

• 한국전자파학회논문지
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• 제24권1호
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• pp.91-97
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• 2013

지표면의 후방 산란 계수를 계산하는 지표면 산란 모델의 입력 변수로는 크게 수분함유량과 지표면 거칠기가 있고, 산란 계수 계산에 있어 지표면 거칠기의 영향이 수분함유량의 영향보다 크다. 본 연구에서는 지표면 거칠기의 정확한 측정 방법을 제기하고, 측정 오차를 분석한다. 이를 위하여 대표적인 지표면 거칠기 측정 장치인 pin-board profiler(1 m, 0.5 cm 간격)와 laser profiler(1 m, 0.25 cm 간격)를 이용하여 실제 지표면을 측정하였다. 두 측정 장치의 평균 차이는 유효 높이(RMS height)가 0.097 cm, 상관 길이(correlation length)가 1.828 cm이었다. 그리고 상관 함수, 상대오차를 분석한 결과, laser-profiler의 반복 측정에 대한 장치의 안전성이 더 좋았다. 두 측정 장치의 차이가 후방 산란 계수에 미치는 영향을 분석하기 위해 지표면 산란 모델을 이용하여 비교한 결과, 입사각 $20{\sim}60^{\circ}$에서 1 dB 이하의 차이를 보였다.

• 한국정밀공학회지
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• 제7권3호
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• pp.37-47
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• 1990

In accordance with the high precision of mechanical elements, it has been required to high precision in surface roughness measurement and, therefore, stylus tip radius is manufa- ctured less than 2 .mu. m through ion sputter machining. In this experiment, by suing ion sputter machined stylus pf fine tip, radius and lapping machined stylus, surface roughness of standard specimens, silicon wafer were measured and then Rmax, Ra, RMS value were investi- gatedaccording to the variation of tip radius of stylus. As a result, measuring error due to the variation of stylus tip radius in surface roughness measurement was decreased by using ion sputter machined stylus and also the measuring accuracy was improved. And the measuring variation of Ra, RMS calculated from correlation coefficient lager than 0.9 on the wave of short period and amplitude using ion sputter machined stylus of fine tip radius.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.392-392
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• 2010

In this study, high-speed chemical dry thinning process of Si wafer and evolution of surface roughness were investigated. Direct injection of NO gas into the reactor during the supply of F radicals from $NF_3$ remote plasmas was very effective in increasing the Si thinning rate due to the NO-induced enhancement of surface reaction but thinned Si surface became roughened significantly. Addition of Ar gas, together with NO gas, decreased root mean square (RMS) surface roughness of thinned Si wafer significantly. The process regime for the thinning rate enhancement with reduced surface roughness was extended at higher Ar gas flow rate. Si wafer thinning rate as high as $22.8\;{\mu}m/min$ and root-mean-squared (RMS) surface roughness as small as 0.75 nm could be obtained. It is expected that high-speed chemical dry thinning process has possibility of application to ultra-thin Si wafer thinning with no mechanical damage.