• Journal of Advanced Marine Engineering and Technology
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• v.32 no.2
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• pp.330-335
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• 2008

In this study, highly miniaturized short-wavelength transmission line employing periodically perforated ground metal (PPGM) structures were developed for application to miniaturized on-chip passive component on Si RFIC. The transmission line employing PPGM structure showed shorter wavelength and lower characteristic impedance than conventional coplanar-type transmission line. The wavelength of the transmission line employing PPGM structure was 57% of the conventional coplanar-type transmission line on Si Radio Frequency Integrated Circuit (RFIC) substrate. Basic characteristics of the transmission line employing PPGM structure were also investigated in order to evaluate its suitability for application to a development of miniaturized passive on-chip components. According to the results, it was found that the PPGM structure is a promising candidate for application to a development of miniaturized on-chip passive components on Si RFIC.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.6
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• pp.964-973
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• 2008

In this study, a short-wavelength coplanar-type transmission line employing periodic ground structure (PGS) was developed for application to miniaturized on-chip passive component on Si Radio Frequency Integrated Circuit (RFIC). The transmission line employing PGS showed shorter wavelength and lower characteristic impedance than conventional coplanar-type transmission line. The wavelength of the transmission line employing PGS structure was 57 % of the conventional coplanar-type transmission line on Si substrate. Using the theoretical analysis. basic characteristics of the transmission line employing PGS (e.g., bandwidth. loss, impedance, and resonance characteristics) were also investigated in order to evaluate its suitability for application to a development of miniaturized passive on-chip components on silicon RFIC. According to the results. the bandwidth of the transmission line employing PGS was more than 895 GHz as long as T is less than 20${\mu}m$, and the resonance characteristic was observed in 1239 GHz, which indicates that the PPGM structure is a promising candidate for application to a development of miniaturized on-chip passive components on Si RFIC.

• Journal of Advanced Marine Engineering and Technology
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• v.34 no.4
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• pp.540-546
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• 2010

In this study, using a coplanar waveguide employing Periodic Strip Structure (PSS), highly miniaturized on-chip wilkinson power divider was realized on Si radio frequency integrated circuit (RFIC). The wilkinson power divider exhibited good RF performances from 25 to 50 GHz, and its size was $0.44{\times}0.1mm^2$, which is 4.8 % of conventional one. We also investigated the RF performances of various structures employing PSS.

• Journal of electromagnetic engineering and science
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• v.4 no.1
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• pp.37-42
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• 2004

In this paper, LNB(low noise block) downconverter MMIC is designed for Ku-band satellite communication system using InGaP/GaAs HBT high linear process. Designed MMIC consists of low noise amplifier, double balanced mixer, and IF amplifier with a total chip area of 2.6${\times}$1.1 $\textrm{mm}^2$. Designed MMIC has the characteristics of over 37.5 ㏈ conversion gain, 14 ㏈ noise figure, ripple of 3 ㏈, and output-referred $P_{1dB}$TEX>(1 ㏈ compression power) of 2.5 ㏈m with total power dissipation of 3 V, 50 mA.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.7 s.361
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• pp.96-104
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• 2007

In this paper, the field solver based deembedding technique for the on-chip inductors to deembed the pad and surrounding ground effect was described, and the results from field solver based deembedding techniques and measurement based matrix calculation method were compared. In addition, LNA circuit is designed by using deembedded inductors and fabricated by using standard $0.25{\mu}m$ CMOS process, in the range over the 2.5GHz it shows the good agreements between measurement and simulation results when the proper deembedding was adapted. Supposed deembedding techniques can be used to get the pure on-chip devices's values and adapted to design accurate RFIC circuit design.

• ETRI Journal
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• v.33 no.1
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• pp.13-17
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• 2011

A highly miniaturized on-chip $180^{\circ}$ hybrid employing periodic ground strip structure (PGSS) was realized on a silicon radio frequency integrated circuit. The PGSS was placed at the interface between $SiO_2$ film and silicon substrate, and it was electrically connected to top-side ground planes through the contacts. Owing to the short wavelength characteristic of the transmission line employing the PGSS, the on-chip $180^{\circ}$ hybrid was highly miniaturized. Concretely, the on-chip $180^{\circ}$ hybrid exhibited good radio frequency performances from 37 GHz to 55 GHz, and it was 0.325 $mm^2$, which is 19.3% of a conventional $180^{\circ}$ hybrid. The miniaturization technique proposed in this work can be also used in other fields including compound semiconducting devices, such as high electron mobility transistors, diamond field effect transistors, and light emitting diodes.

• Journal of Korea Society of Industrial Information Systems
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• v.19 no.2
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• pp.45-49
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• 2014

In this work, a phase shifter radio-frequency integrated chip (RFIC) using a simple all-pass network is presented. As a tuning element of the phase shifter RFIC, tunable capacitors with a multi-layer dielectric of a para-/ferro-/para-electrics using a high tunable BST ferroelectric and a low-loss BZN paraelectric thin film were utilized. In order to evaluate and analyze the fabricated phase shifter RFIC, the same elements such as an inductor and capacitor integrated into it are also fabricated and tested. The designed phase shifter RFIC was fabricated on a quartz substrate in the size of $1.16{\times}1.21mm^2$. As the test results, the maximum phase difference of $350^{\circ}$ is obtained at 15 V and its tuning frequency bandwidth is 90 MHz from 2.72 to 2.81GHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.408-409
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• 2008

In this paper the power divider is realized using the IPD processes for 900/1800 MHz; the designed power divider achieved the isolation of more than -24 dB. the insertion loss of nearly -3.5 dB, and the return loss of about -25 dB. The simple dual-band power divider based on SI-GaAs substrate is realized within the die size of about $2.5\times2mm^2$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.5
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• pp.419-425
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• 2017

This paper presents CMOS UWB RFIC based radar system for high speed target detection. The system can achieve resolution of 15 cm and detection range of 15 m. For developed system, single chip CMOS UWB IC is implemented. To reduce the measuring and processing time, envelope detection and equivalent time sampling technique are used. Measurement results show that the bandwidth and center frequency of UWB pulse can be adjusted in the range of 0.5 GHz~1.0 GHz, 3.5 GHz~4.5 GHz, respectively. Signal processing time including scan time over 15 m distance is about $150{\mu}sec$.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.9
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• pp.9-18
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• 1998

A single RF transceiver chip for an extended GSM handset application was designedm, fabricated and evaluated. A RFIC was fabricated by using silicon BiCMOS process, and then packaged in 80 pin TQFP of $10 {\times} 10 mm^{2}$ in size. As a result, it was achieved guite reasonable integraty and good RF performance at the operation voltage of 3.3V. This paper describes development results of RF receiver section of the RFIC, which includes LNA, down conversion mixer, AGC, switched capacitor filter and down sampling mixer. The test results show that RF receiver section is well operated within frequency range of 925 ~960 MHz, which is defined on the extended GSM specification (E-GSM). The receiver section also reveals moderate power consumption of 67 mA and minimum detectable signal of -105 dBm.