• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1132-1136
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• 2004

In this paper, we intend to make FFS mode cell with LC alignment used non-rubbing method, ion beam alignment method on the a-C:H thin film, to analyze electro-optical characteristics in this cell. We studied on the suitable inorganic thin film for FFS-LCD and the aligning capabilities of nematic liquid crystal (NLC) using the new alignment material of a-C:H thin film as working gas at rf bias condition. A high pretilt angle of about 5$^{\circ}$ by ion beam(IB) exposure on the a-C:H thin film surface was measured. An excellent voltage-transmittance (V-T) and response time curve of the ion-beam-aligned FFS-LCD was observed with oblique ion beam exposure on the DLC thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.7-11
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• 2002

In this study, Au thin films were etched with a $Cl_2/Ar$ gas combination in an in an inductively coupled plasma. The etch properties were measured for different gas mixing ratios of $Cl_2/(Cl_2+Ar)$ while the other process conditions were fixed at rf power (700 W), dc bias voltage (150 V), and chamber pressure (15 mTorr). The highest etch rate of the Au thin film was 3500 $\AA/min$ and the selectivity of Au to $SiO_2$ was 4.38 at a $Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is Au-Cl bonding by chemical reaction between Cl and Au. During the etching of Au thin films in $Cl_2/Ar$ plasma, Au-Cl bond is formed, and these products can be removed by the physical bombardment of Ar ions. In addition, Optical emission spectroscopy (OES) were investigated to analyze radical density of Cl and Ar in plasma. The profile of etched Au investigated with scanning electron microscopy (SEM).

• 전기학회논문지
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• 제56권3호
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• pp.566-570
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• 2007

The specific electrical, optical and acoustic properties of Zinc Oxide (ZnO) are important for semiconductor process which has many various applications. Piezoelectric ZnO films has been widely used for such as transducers, bulk and surface acoustic-wave resonators, and acousto-optic devices. In this study, we investigated etch characteristics of ZnO thin films in inductively coupled plasma etch system with $BCl_3/Ar$ gas mixture. The etching characteristics of ZnO thin films were investigated in terms of etch rates and selectivities to $SiO_2$ as a function of $BCl_3/Ar$ gas mixing ratio, RF power, DC bias voltage and process pressure. The maximum ZnO etch rate of 172 nm/min was obtained for $BCl_3$ (80%)/Ar(20%) gas mixture. The chemical states on the etched surface were investigated with X-ray photoelectron spectroscopy (XPS).

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.40-44
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• 2000

In this paper, since the research on the etching of SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin film was few (specially Cl$_2$-base ), we had studied the surface reaction of SBT thin films using the OES in high density plasma etching as a function of rf power, dc bias voltage, and Cl$_2$/(C1$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction in our previous papers$^{1.2}$ . The change of Cl radical density that is measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhance to increase the etch rates of SBT thin films and these results were confirmed by XPS analysis.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.996-1002
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• 2000

Ferroelectric (Ba, Sr) TiO$_3$(BST) thin films have attracted much attention for use in new capacitor materials of dynamic random access memories (DRAMs). In order to apply BST to the DRAMs, the etching process for BST thin film with high etch rate and vertical profile must be developed. However, the former studies have the problem of low etch rate. In this study, in order to increase the etch rate, BST thin films were etched with a magnetically enhanced inductively coupled plasma(MEICP) that have much higher plasma density than RIE (reactive ion etching) and ICP (inductively coupled plasma). Experiment was done by varying the etching parameters such as CF$_4$/(CF$_4$+Ar) gas mixing ratio, rf power, dc bias voltage and chamber pressure. The maximum etch rate of the BST films was 170nm/min under CF$_4$/CF$_4$+Ar) of 0.1, 600 W/-350 V and 5 mTorr. The selectivities of BST to Pt and PR were 0.6 and 0.7, respectively. Chemical reaction and residue of the etched surface were investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS).

• Transactions on Electrical and Electronic Materials
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• 제4권3호
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• pp.1-4
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• 2003

The etching of Au thin films has been performed in an inductively coupled $CF_4 / Cl_2 / Ar$ plasma. The etch properties including etch rate and selectivity were examined as $CF_4$ content adds from o to $30\%$ to $Cl_2/Ar$ plasma. The $Cl_2/(Cl_2 + Ar)$ gas mixing ratio was fixed at $20\%$. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of -150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a $10\%$ additive $CF_4$ into $Cl_2/Ar$ gas mixture. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. The XPS analysis shows that the intensities of Ail peaks are changed, indicating that there is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point. However, etching products can be sputtered by Ar ion bombardment.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.933-938
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• 2002

(Ba,Sr)TiO$_{4}$ (BST) thin films on Pt/Ti/SiO$_{2}$/Si substrates were deposited by a sol-gel method and the etch characteristics of BST thin films have been investigated as a function of gas mixing ratio. The maximum etch rate of the BST films was 440 $AA$/min under such conditions as: CF$_{4}$(CF$_{4}$＋Ar) of 0.2, RF-power of 700 W, DC-bias voltage of -200 V, pressure of 15 mTorr and substrate temperature of 30 $^{circ}C$. The selectivities of BST to Pt, SiO$_{2}$ and PR were 0.38, 0.25 and 0.09, respectively. In the XPS (X-ray photoelectron spectroscopy) analysis, Barium (Ba) and Strontium (Sr) component in BST thin films formed low volatile compounds such as BaFx, SrFx, which are forms by the chemical reaction with F atoms and is removed by Ar ion bombardment. Titanium (Ti) is removed by chemical reaction such as TiF with ease. The result of secondary ion mass spectrometry (SIMS) analysis confirmed the existence of the BaFx, SrFK, TiFx.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.734-737
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• 2004

The metal-ferroelectric-semiconductor (MFS) structure is widely studied for nondestructive readout (NDRO) memory devices, but conventional MFS structure has a critical problem. It is difficult to obtain ferroelectric films like PZT on Si substrate without interdiffusion of impurities such as Pb, Ti and other elements. In order to solve these problems, the metal-ferroelectric-insulator-semiconductor (MFIS) structure has been proposed with a buffer layer of high dielectric constant such as MgO, $Y_2O_3$, and $CeO_2$. In this study, the etching characteristics (etch rate, selectivity) of MgO thin films were etched using $Cl_2/Ar$ plasma. The maximum etch rate of 85 nm/min for MgO thin films was obtained at $Cl_2$(30%)/Ar(70%) gas mixing ratio. Also, the etch rate was measured by varying the etching parameters such as ICP rf power, dc-bias voltage, and chamber pressure. Plasma diagnostics was performed by Langmuir probe (LP) and optical emission spectroscopy (OES).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.102-102
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• 2008

Sapphire (${\alpha}-Al_2O_3$) has been used as the substrate of opto-electronic device because of characteristics of thermal stability, comparatively low cost, large diameter, optical transparency and chemical compatibility. However, there is difficulty in the etching and patterning due to the physical stability of sapphire and the selectivity with sapphire and mask materials [1,2]. Therefore, sapphire has been studied on the various fields and need to be studied, continuously. In this study, the etching properties of sapphire substrate were investigated with various $CH_4$/Ar gas combination, radio frequency (RF) power, DC-bias voltage and process pressure. The characteristics of the plasma were estimated for mechanism using optical emission spectroscopy (OES). The chemical compounds on the surface of sapphire substrate were investigated using energy dispersive X-ray (EDX). The chemical reaction on the surface of the etched sapphire substrate was observed by X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to investigate the vertical and slope profiles.

• 대한전자공학회논문지SD
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• 제49권4호
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• pp.1-6
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• 2012

본 논문에서는 고주파에서 동작하는 터널링 전계효과 트랜지스터 (TFET)의 소신호 파라미터 추출과 이에 대한 분석을 다루고 있다. 시뮬레이션으로 구현된 TFET의 채널 길이는 50 nm에서 100 nm 사이에서 변화되었다. Conventional planar MOSFET 기반의 quasi-static 모델을 이용하여 TFET의 파라미터 추출이 이루어졌으며 다른 채널 길이를 갖는 TFET에 대한 소신호 파라미터의 값을 게이트 바이어스 변화에 따라서 추출하였다. 추출 결과로부터 effective gate resistance와 transconductance, source-drain conductance, gate capacitance 등 주요 파라미터의 채널 길이 변화에 따른 경향성이 conventional MOSFET과 상당히 다른 것을 확인하였다. 그리고 $f_T$는 MOSFET과 달리 게이트 길이 역수의 값에 정확히 반비례하는 특성을 보였으며 TFET의 고주파 특성 향상을 transconductance의 개선이 아닌 gate capacitance의 감소에 의하여 가능함을 알 수 있었다.