• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.3A
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• pp.319-323
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• 2007

In this paper, the automatic precision measurement of RF voltage has been done using the power and impedance standards [1] in the frequency range of 50 to 1000 MHz. A coaxial microcalorimeter and an automatic network analyzer were used for the determination of the RF-DC differences and the total uncertainty is about 1.0 %. A HP computer, a commodore computer and IEEE-488 interface bus were used for measuring the effective efficiency of thermistor mount and the RF-DC difference of thermal voltage converter, All processes of measurement were accomplished by self-developed program automatically.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.48-48
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• 2007

P-type transparent conducting $CuGaO_2$ thin films have been prepared by DC/RF sputtering using Quartz(0001) and sapphire(0001) substrates. The target was fabricated by heating a stoichiometric mixture of CuO and $Ga_2O_3$ at 1373K for 12h under $N_2$ atmosphere. The film were deposited under mixture gas of Ar and $O_2(Ar:O_2=4:1)$ during 10~30min. and the as-deposited films were annealed at 1123K and $N_2$ atmosphere. Room temperature conductivity and the activation energy of the sintered body in the temperature range of 223K ~ 423K were 0 004S/cm, 1.9eV, respectively. XRD revealed that all of the as-deposited films were amorphous. Heating of the films deposited on Quartz substrates above 1123K resulted in crystallization with a second phase of $CuSiO_3$, which was assumed owing to reaction with Quartz substrate. The single phase of $CuGaO_2$ was obtained at the film deposited on the sapphire substrates. The transmittance after annealing of DC- and RF-sputtered films were 55~75% at 550nm. From the transmittance and reflectance measurement. the direct band gap of the DC/RF-sputtered films were 3.63eV and 3.57eV. and there was little difference between DC and RF sputtered films.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.5
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• pp.223-228
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• 2018

In this paper the water sensor using a coaxial cavity resonator is designed and manufactured. The water sensor which can sense water drop linearly has been constructed with voltage controlled oscillator(VCO), coaxial cavity resonator, RF switch, RF detector, A/D converter, DAC and micro controller. The operating frequency range of the designed water sensor is from 2.5GHz to 3.2GHz and the input voltage and current source are 24[V/DC] and 1[A]. The designed sensor circuit includes VCO, RF switch, RF detector which varies the frequency characteristics of the devices in the high frequency of 3GHz. And so we should correct the error of the frequency characteristics of those devices in the sensor circuit. To do this, we make the reference path which switches the signals to the RF detector directly without sending it to the resonator. According to the result of simulation and measurement, we can see that there is 0-50MHz difference between simulated resonator frequency and manufactured resonator frequency.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.11-14
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• 2005

In plasma processing reactors, it is common practice to control plasma density and ion bombardment energy by manipulating excitation voltage and frequency. In this paper, a dually excited capacitively coupled rf plasma reactor is self-consistently simulated with a three moment model. Effects of phase differences between primary and secondary voltage waves, simultaneously modulated at various combinations of commensurate frequencies, on plasma properties are investigated. The simulation results show that plasma potential and density as well as primary self-dc bias are nearly unaffected by the phase lag between the primary and the secondary voltage waves. The results also show that, with the secondary frequency substantially lower than the primary frequency, secondary self·do bias remains constant regardless of the phase lag. As the secondary frequency approaches to the primary frequency, however, the secondary self-dc bias becomes greatly altered by the phase lag, and so does the ion bombardment energy at the secondary electrode. These results demonstrate that ion bombardment energy can be more carefully controlled through plasma simulation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.4
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• pp.551-561
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• 2001

In this paper, the large signal unified model is established for H4O GaAs pHEMT of GEC-Marconi using modified Curtice model. This unified model includes DC characteristic, small signal, and noise characteristic as various bias. Particularly, the model can simply and physically explain trans-conductance $(g_m)$ of pHEMT using modified Curtice model, and can tell the difference $g_m$, $R_ds$ at DC and these at AC through inclusion of internal RF-choke. The results of the established model built up using SDD in HP-Eessof show good agreement to the S/W measured data in DC, small signal, and noise characteristic. This model can also be applied to various computer aided analysis, such as linear simulation, 1-tone harmonic balance simulation, and multi-tone harmonic balance simulation, so the LNA(Low Noise Amplifier), oscillator, and mixer design has been shown using this model library.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.665-667
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• 2010

In this paper, the method to detect the IM(Inter Modulation) components of power amplifier is proposed by using frequency down-convertor. Output signals of power amplifier which is coupled by 20dB coupler and divided by power divider are applied to RF and LO of the frequency converter. It could be found the magnitude of IM components of power amplifier as a converted DC voltage which is come from the difference between 3th and 5th IM component. The detected DC voltage values are changed from 0.72V to 0.9V when 3rd IM component level changed from -26.4dBm to +2.15dBm and 5th IM component level changed from -34.2dBm to -12.89dBm as the Vgs of 3W power amplifier is changed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.12 s.115
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• pp.1156-1163
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• 2006

This paper presents an ultra wideband(UWB) direct conversion mixer for IEEE 802.15.3a applications with simulation and measurement results. Since the direct conversion mixing causes dc-offset and even-order distortion, the proposed mixer adopts an anti-parallel diode pairs(APDPs) to solve these problems. The proposed mixer consists of an in-phase wilkinson power divider over $3.1{\sim}4.8GHz$, a wideband $45^{\circ}$ power divider over $1.5{\sim}2.4GHz$, and miniatured band pass filters(BPFs) for RF-LO isolations. The conversion loss is optimized with impedance matchings between APDPs and wideband components. The measured mixer shows the conversion loss of 13.5 dB, input third-order intercept-point($IIP_3$) of 7 dBm, and 1-dB gam compression point($P_{1dB}$) of -4 dBm. Quadrature(I/Q) outputs have the magnitude difference of about 1 dB and phase difference of ${\pm}3^{\circ}$.

• Korean Journal of Optics and Photonics
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• v.17 no.2
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• pp.175-180
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• 2006

A single sideband(SSB) modulator operating at 5.5 GHz was fabricated by polarization inversion techniques. The dimension of domain inversion in a $LiINbO_3$ Mach-Zehnder structure was precisely controlled so that the RF signal applied on two Mach-Zehnder arms gives rise to $90^{\circ}$ effective phase difference. The single sideband suppression was maximized by optimization of the polarization status of the optical input and by the DC bias value. The fabricated device showed the center frequency of 5.8 GHz and the maximum sideband suppression of 33dB, where the bandwidth of 15 dB sideband suppression ranged over a 2.5 GHz span. The optical phase delay could be regulated by the DC bias voltage, fur example, the enhanced optical modulation sideband was distinctively switched from the upper sideband to the lower sideband by changing the DC bias voltage from 1.9 V to -10.6 V.

• ETRI Journal
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• v.26 no.1
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• pp.61-64
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• 2004

We have explored the fabrication of an InP/InGaAs single heterojunction bipolar transistor (HBT) and a wave guide p-i-n photodiode (PD) on two kinds of double stacked layers for the implementation of an optoelectronic millimeter-wave monolithic integrated circuit (OEMMIC). We applied a photosensitive polyimide for passivation and integration to overcome the large difference between the HBT and PD layers of around $3{\mu}m$. Our experiment showed that the RF characteristics of the HBT were dependent on the location of the PD layer, while the dc performances of the HBTs and PDs were independent of the type of stacked layer used. The $F_t$ and $F_{max}$ of the HBTs on the HBT/PD stacked layer were 10% lower than those of the HBTs on the PD/HBT stacked layer.

• Journal of Ceramic Processing Research
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• v.22 no.1
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• pp.114-120
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• 2021

A hybrid structure of Mn (2.59 wt.%) doped SnO2 (MTO)/Ag/MTO films with refractive index matching layers (IMLs) was deposited on PET substrate by a RF/DC magnetron sputtering method at room temperature. To match the refractive index (n) of MTO/Ag/MTO/PET film, high and low refractive index materials of MTO (n = 2.02) and SiO2 (n = 1.52) were placed between MTO/Ag/MTO and PET substrate, respectively. In order to evaluate the effect of IMLs on the reflectivity and color variation, an optical simulation program, Essential Macleod Program (EMP) was adopted, in advance. From EMP simulation, the multilayer film of MTO (40 nm)/Ag (13 nm)/MTO (40 nm) with optimized IMLs of SiO2 (120 nm)/MTO (10 nm) shows the excellent optical transmittance above 86.1% at the 550 nm wavelength, and the pattern visible defect was reduced as compared with the reference film of MTO/Ag/MTO/PET film without IMLs. From the bending test, the multilayer film of MTO (40 nm)/Ag (13 nm)/MTO (40 nm)/SiO2 (90 nm)/MTO (10 nm)/PET showed excellent flexible properties. There was only 10% resistance variation under 10,000 bending cycle with curvature radius of 5 mm.