• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.73-74
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• 1998

• Proceedings of the Korean Vacuum Society Conference
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• 1995.06a
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• pp.28-29
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• 1995

• Korean Journal of Materials Research
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• v.20 no.9
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• pp.494-499
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• 2010

Tin oxide thin films were prepared on borosilicate glass by rf reactive sputtering at different deposition powers, process pressures and substrate temperatures. The ratio of oxygen/argon gas flow was fixed as 10 sccm / 60 sccm in this study. The structural, electrical and optical properties were examined by the design of experiment to evaluate the optimized processing conditions. The Taguchi method was used in this study. The films were characterized by X-ray diffraction, UV-Vis spectrometer, Hall effect measurements and atomic force microscope. Tin oxide thin films exhibited three types of crystal structures, namely, amorphous, SnO and $SnO_2$. In the case of amorphous thin films the optical band gap was widely spread from 2.30 to 3.36 eV and showed n-type conductivity. While the SnO thin films had an optical band gap of 2.24-2.49 eV and revealed p-type conductivity, the $SnO_2$ thin films showed an optical band gap of 3.33-3.63 eV and n-type conductivity. Among the three process parameters, the plasma power had the most impact on changing the structural, electrical and optical properties of the tin oxide thin films. It was also found that the grain size of the tin oxide thin films was dependent on the substrate temperature. However, the substrate temperature has very little effect on electrical and optical properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.815-819
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• 2014

Aluminum nitride (AlN) thin film and TiN film as a buffer layer were deposited on INCONEL 600 substrate by reactive RF magnetron sputtering at room temperature(R.T.) under 25~75% $N_2/Ar$ atmosphere. The as-deposited AlN films at 25~50% $N_2/Ar$ showed a polycrystalline phase of hexagonal AlN, and an amorphous phase. The peak of AlN (002) plane, which was determinant on a performance of piezoelectric transducer, became strong with increasing the $N_2/Ar$ ratio. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. The piezoelectric sensing properties of AlN module were performed using pressure-voltage measurement system. The output signal voltage of AlN module showed a linear behavior between 20~80 mV in 1~10 MPa range, and the pressure-sensing sensitivity was calculated as 3.6 mV/MPa.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.153-157
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• 2004

ITO thin films were deposited on PET and soda-lime glass substrates by a dc reactive magnetron sputtering of In-Sn alloy metal target without substrate heater and post-deposition thermal treatment. The dependency of rf-bias voltage and substrate power during deposition processing was investigated to control the electrical and optical properties of ITO films. The range of rf bias voltage is from 0 to -80 V and the substrate power is applied from 10 to 50 W. The minimum resistivity of ITO film is 5.4${\times}$10$^{-4}$ $\Omega$cm at 50 W power and rf-bias voltage of -20 V. The best transmittance of ITO films at 550 nm wavelength is 91 % in the substrate power of 30 W and rf-bias voltage of -80 V.

• Journal of the Korean institute of surface engineering
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• v.35 no.2
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• pp.113-121
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• 2002

We have investigated insulating properties of $SiO_2$ interlayer for the thin film strain gauge, which were prepared by RF magnetron sputtering method in various deposition conditions, such as Ar pressure, gas flow rates and sputtering gases. SEM, AFM and FT-IR techniques were used to analyze its structures and composition. As the Ar pressure and the flow rate increased, the insulating interlayer showed low insulating resistance due to its porous structure and defects. Oxygen deficiency in $SiO_2$ was decreased as fabricated by hydrogen reactive sputtering. We could enhance the surface mobility of sputtered adatoms by using Ar/$H_2$ sputtering gas and obtain a good surface roughness and insulating property. The optimum insulating resistance of 9.22 G$\Omega$ was obtained in Ar/30% $H_2$ mixed gas, flow rate 10sccm, and 1mTorr.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.160-160
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• 2006

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.173-173
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.177-177
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• 2001

• Journal of the Semiconductor & Display Technology
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• v.8 no.1
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• pp.33-38
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• 2009

We have investigated the effect of the ambient gases on the characteristics of AZO thin films for the OLED (organic light emitting diodes) devices. These AZO thin films are deposited by rf-magnetron sputtering under different ambient gases (Ar, Ar+$O_2$, and Ar+$H_2$) at 300. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.2sccm to 1sccm and from 0.5sccm to 5sccm, respectively. The AZO thin films were preferred oriented to (002) direction regardless of ambient gases. The electrical resistivity of AZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$ while under Ar+$H_2$ atmosphere the electrical resistivity showed minimum value near 1sccm of $H_2$. All the films showed the average transmittance over 80% in the visible range. The OLED device was fabricated with different AZO substrates made by configuration of AZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of AZO substrate.