Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication of AlN Thin Film by Reactive RF Magnetron Sputtering and Sensing Characteristics of Oil Pressure

반응성 RF 마그네트론 스퍼터링에 의한 AlN 박막 제조 및 유압 감지 특성

  • Seok, Hye-Won (Electronic Materials & Module Team, Korea Institute of Ceramics Engineering and Technology) ;
  • Kim, Sei-Ki (Electronic Materials & Module Team, Korea Institute of Ceramics Engineering and Technology) ;
  • Kang, Yang-Koo (Electronic Materials & Module Team, Korea Institute of Ceramics Engineering and Technology) ;
  • Hong, Yeon-Woo (Electronic Materials & Module Team, Korea Institute of Ceramics Engineering and Technology) ;
  • Lee, Young-Jin (Electronic Materials & Module Team, Korea Institute of Ceramics Engineering and Technology) ;
  • Ju, Byeong-Kwon (Display and Nanosystem Lab, Korea University)
  • 석혜원 (한국세라믹기술원 전자소재.모듈팀) ;
  • 김세기 (한국세라믹기술원 전자소재.모듈팀) ;
  • 강양구 (한국세라믹기술원 전자소재.모듈팀) ;
  • 홍연우 (한국세라믹기술원 전자소재.모듈팀) ;
  • 이영진 (한국세라믹기술원 전자소재.모듈팀) ;
  • 주병권 (고려대학교 디스플레이 및 나노시스템 연구실)
  • Received : 2014.09.26
  • Accepted : 2014.11.05
  • Published : 2014.12.01
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Abstract

Aluminum nitride (AlN) thin film and TiN film as a buffer layer were deposited on INCONEL 600 substrate by reactive RF magnetron sputtering at room temperature(R.T.) under 25~75% $N_2/Ar$ atmosphere. The as-deposited AlN films at 25~50% $N_2/Ar$ showed a polycrystalline phase of hexagonal AlN, and an amorphous phase. The peak of AlN (002) plane, which was determinant on a performance of piezoelectric transducer, became strong with increasing the $N_2/Ar$ ratio. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. The piezoelectric sensing properties of AlN module were performed using pressure-voltage measurement system. The output signal voltage of AlN module showed a linear behavior between 20~80 mV in 1~10 MPa range, and the pressure-sensing sensitivity was calculated as 3.6 mV/MPa.

Keywords

References

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