Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Spin Spray-Deposited Spinel Thin Films for Microbolometer Applications

마이크로볼로미터 응용을 위한 스핀 스프레이로 증착된 스피넬 박막

  • Jeon, Chang Jun (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Lee, Kui Woong (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Le, Duc Thang (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Jeong, Young Hun (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Yun, Ji Sun (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Paik, Jong Hoo (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology) ;
  • Cho, Jeong Ho (Intelligent Electronic Component Team, Korea Institute of Ceramic Engineering and Technology)
  • 전창준 (한국세라믹기술원 지능형전자부품팀) ;
  • 이귀웅 (한국세라믹기술원 지능형전자부품팀) ;
  • 레득탕 (한국세라믹기술원 지능형전자부품팀) ;
  • 정영훈 (한국세라믹기술원 지능형전자부품팀) ;
  • 윤지선 (한국세라믹기술원 지능형전자부품팀) ;
  • 백종후 (한국세라믹기술원 지능형전자부품팀) ;
  • 조정호 (한국세라믹기술원 지능형전자부품팀)
  • Received : 2014.09.29
  • Accepted : 2014.11.05
  • Published : 2014.12.01
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Abstract

Spinel thin films were prepared by the spin spray technique to develop new thermal imaging materials annealed at low temperature for uncooled microbolometer applications. The spinel thin films were deposited from $[(Ni_{0.30}Co_{0.33}Mn_{0.37})_{1-x}Cu_x]_3O_4$ ($0.1{\leq}x{\leq}0.2$) solutions and then annealed at $400^{\circ}C$ for 1 h in argon. Effects of Cu content (x) and deposition time on the electrical properties of the annealed films were investigated. With increasing deposition time, the resistivity of the annealed films increased. For the annealed films deposited for 1 min, the resistivity of x=0.15 films was lower than that of x=0.1 films due to the different grain sizes. The high temperature coefficient of resistance (TCR) of the annealed films could be obtained at temperature below $50^{\circ}C$. Typically, the resistivity of $127{\Omega}{\cdot}cm$ and TCR of -5.69%/K at $30^{\circ}C$ were obtained for x=0.1 films with deposition time of 1 min annealed at $400^{\circ}C$ for 1 h in argon.

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References

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