• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.197-205
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• 2005

Development of the packaging is one of the critical issues for commercialization of the RF-MEMS devices. RF MEMS package should be designed to have small size, hermetic protection, good RF performance and high reliability. In addition, packaging should be conducted at sufficiently low temperature. In this paper, a low temperature hermetic wafer level packaging scheme for the RF-MEMS devices is presented. For hermetic sealing, Au-Sn eutectic bonding technology at the temperature below $300{\times}C$ is used. Au-Sn multilayer metallization with a square loop of $70{\mu}m$ in width is performed. The electrical feed-through is achieved by the vertical through-hole via filled with electroplated Cu. The size of the MEMS Package is $1mm\times1mm\times700{\mu}m$. By applying $O_2$ plasma ashing and fabrication process optimization, we can achieve the void-free structure within the bonding interface as well as via hole. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. Any organic gases or contamination are not observed inside the package. The total insertion loss for the packaging is 0.075 dB at 2 GHz. Furthermore, the robustness of the package is demonstrated by observing no performance degradation and physical damage of the package after several reliability tests.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.11 s.353
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• pp.175-184
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• 2006

In this paper, we describe a 900MHz CMOS RF transceiver using an ISM band for ZigBee applications. The architecture of the designed rx front-end, which consists of a low noise amplifier, a down-mixer, a programmable gain amplifier and a band pass filter. And the tx front-end, which consists of a band pass filter, a programmable gain amplifier, an up-mixer and a drive amplifier. A low-if topology is adapted for transceiver architecture, and the total current consumption is reduced by using a low power topology. Entire transceiver is verified by means of post-layout simulation and is implemented in 0.18um RF CMOS technology. The fabricated chip demonstrate the measured results of -92dBm minimum rx input level and 0dBm maximum tx output level. Entire power consumption is 32mW(@1.8VDD). Die area is $2.3mm{\times}2.5mm$ including ESD protection diode pads.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1429-1435
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• 2004

In this work, high performance broadband amplifier MMIC including all the matching and biasing components, and electrostatic discharge (ESD) protection circuit was developed for K/Ka band applications. Therefore, external biasing or matching components were not required for the operation of the MMIC. STO (SrTiO3) capacitors were employed to integrate the DC biasing components on the MMIC, and miniaturized LC parallel ESD protection circuit was integrated on MMIC, which increased ESD breakdown voltage from 10 to 300 V. A pre-matching technique and RC parallel circuit were used for the broadband design of the amplifier MMIC. The amplifier MMIC exhibited good RF performances and good stability in a wide frequency range. The chip size of the MMICs was $1.7{\pm}0.8$ mm2.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.119-119
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and Copper substrates at 25 ∼ 100 $^{\circ}C$ using cyclohexane and ethylcyclohexane precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 20∼50 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency (P$\_$k/), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest P$\_$k/ value of plasma polymerized ethylcyclohexane film (92.1% at 50 W) was higher than that of the plasma polymerized cyclohexane film (85.26% at 50 W), indicating inhibition of oxygen reduction. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the ethylcyclohexane films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C-V data measured at 1㎒. From the electrical property measurements such as I-V ana C-V characteristics, the minimum dielectric constant and the best leakage current of ethylcyclohexane thin films were obtained to be about 3.11 and 5 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$ and cyclohexane thin films were obtained to be about 2.3 and 8 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$.

• Proceedings of the KIEE Conference
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• 2003.11b
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• pp.63-66
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• 2003

Resident mobile communication system technology has been developed. But, surged high voltages in antenna generally have damaged mobile communication. To solve this problem, we use arrester in Rx-Tx line system. That is, the arrester is to protect devices in system against considerable over-voltages or lighting strike. Currently, system protection using of arrester has been arrived in content level but these days, the fact of PIMD(Passive Intermodulation Distortion) which is RF passive components' nonlinear characteristic has appeared. This paper describes PIMD' causes occurred in arrester-estimated from Gas tube capsule, plating, temperature, humidity by experiment.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.53 no.11
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• pp.776-779
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• 2004

Resident mobile communication system technology has been developed. But, surged high voltages in antenna generally have damaged mobile communication. To solve this problem, we use an arrester in Rx-Tx line system. That is, the arrester is introduced to protect devices in system against considerable over-voltages or lighting strike. Currently, system protection using an arrester has arrived in a content level but these days, the PIMD(Passive Intermodulation Distortion) with RF passive components' nonlinear characteristic has appeared. This paper describes PIMD' causes occurred in arrester-estimated from Gas tube capsule. plating, temperature, and humidity by experiment.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.4
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• pp.520-529
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• 1999

Exposure limits for human protection are determined by converting basic limits for induced current, SAR(specific absorption rate), or power density, which are based upon biological effects, to measurable electric and magnetic field intensities. As a part of studies for the establishment of a domestic guideline for exposure limits, the validity of the exposure limits of five representative guidelines or standards, which are derived from basic limits, are investigated in this paper, using the published results for coupling mechanisms of electromagnetic field into a human body, and problems in each standard are analyzed and compared with each other.

• Nuclear Engineering and Technology
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• v.41 no.6
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• pp.807-812
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• 2009

An ICRF discharge cleaning and a fast wave electron heating experiment were performed. For automated operation and providing the diagnostics of the ICRF system, the ICRF local network was designed and implemented. This internal network provides monitoring, RF protection, remote control, and RF diagnostics. All the functions of the control system were realized by customized DSP units. The DSP units were tied by a local network in parallel. Owing to the distributed feature of the control system, the ICRF local control system is quite flexible to maintain. Developing the subsystem is a more effective approach compared to developing a large controller that governs the entire system. During the first experimental campaign of the KSTAR tokamak, the control system operated as expected without any major problems that would affect the tokamak operation. The transmitter was protected from harmful over-voltage events through reliable operation of the system.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.12 s.354
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• pp.16-23
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• 2006

This paper presents the development of the fast Direction Finder using direct conversion method, which can intercept for short pulse signal of less' than 1 msec. in RF Down Converter, and CVDF(Correlative Vector Direction Finding) algorithm, which estimates DoA (Direction of Arrival). The configuration and characteristics of direction finder using 5-channel equi-spaced circular array antenna are presented and the direct conversion techniques for removing tuning time using I/Q demodulator are described. The CRLB of our model is derived, the principles of 2 kind of CVDF algorithm are explained and their characteristics are compared with CRLB w.r.t the number of samples and spacing ratio. The RF Down Converter prototype using direct conversion method is manufactured, the 2 kind of CVDF algorithm are applied and their performance are analyzed. Finally it is confirmed the LSE based CVDF algorithm is better than correlation-coefficient based except for ambiguity protection capabilities.

• Proceedings of the KIEE Conference
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• 2009.04b
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• pp.204-206
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• 2009

철도의 선로변에서 선로나 신호설비의 유지 보수 작업을 할 경우 감각 차단현상에 의해 작업 전후방 일정거리에 열차가 접근하고 있어도 열차를 인지하지 못하여 사상사고가 자주 발생하고 있다. 이러한 철도 선로변의 사상사고 저감을 위해 무선통신에 의한 안전설비를 설계 및 개발하였다.