• 한국진공학회지
• /
• 제10권1호
• /
• pp.112-118
• /
• 2001

본 논문에서는 축 방향으로 자화된 용량결합형 13.65 MHz/40 KHz RF 방전에서 Langmuir Probe, Emissive Probe를 통해 이온 전류 밀도, 전자 온도, 플라즈마 전위의 자장 의존성 및 자기 바이어스 전위를 조사하였다. 자장을 인가함으로서 실험변수 범위 내에서 최대 3배의 이온 전류밀도증가를 얻었고 점화가능한 기체 압력의 최저값을 줄일 수 있었다. 플라즈마가 자화된 경우 공간 전위는 평균적으로 감소하였고 RF 전압의 한주기 동안 시 변동폭이 크게 증가하였다. 플라즈마 전위의 자장 의존성은 Particle-in-Cell Simulation을 수행하여 실험 결과와 비교하였다. 대표적 실험 조건에서 전자 온도는 자장에 따라 약 4 eV에서 5 eV로 약간 증가하는 경향을 보였으나 방전 주파수를 40 KHz로 줄인 경우 1.8 eV에서 0.8 eV로 감소하였다. 실험 장치의 응용 예로서 플루오로 카본 가스에 의한 식각실험이 수행되었다. 자화 플라즈마의 산화막 식각속도 증가를 확인함으로서 축방향 자장이 실제 공정에 긍정정인 영향을 미침을 확인 할 수 있었다.

• 한국전기전자재료학회논문지
• /
• 제21권12호
• /
• pp.1051-1056
• /
• 2008

In this study, the investigations of the TiN etching characteristics were carried out with addition of $Cl_2$ gas in an inductively coupled $BCl_3$-base plasma system. Dry etching of the TiN was studied by varying the etching parameters including $Cl_2$ gas addition ratio, RF power, DC-bias voltage and pressure. The etch rate of TiN thin film was maximum when the $Cl_2$ gas addition flow was 2 sccm with fixed other conditions. As the RF power DC-bias voltage were increased, the etch rate of TiN thin film showed increasing tendency. $BCl_3/Cl_2$/Ar plasmas were characterized by optical emission spectroscopy (OES) analysis. The chemical reaction on the surface of the etched TiN films was investigated with X-ray photoelectron spectroscopy (XPS).

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2003년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.322-325
• /
• 2003

BST thin films were etched with inductively coupled plasmas. A chemically assisted physical etch of BST was experimentally confirmed by ICP under various gas mixtures. After a 20 % addition of $BCl_3$ to the $Cl_2/Ar$ mixture, resulting in an increased the chemical effect. As a increases of RF power, substrate power, and substrate temperature, and decrease of working pressure, the ion energy flux and chlorine atoms density increased. The maximum etch rate of the BST thin films was 90.1 nm/min at the RF power, substrate power, working pressure, and substrate temperature were 700 W, 300 W, 1.6 Pa, and 20 $^{\circ}C$, respectively. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching product.

• Applied Science and Convergence Technology
• /
• 제23권6호
• /
• pp.357-365
• /
• 2014

A non-invasive method for ion energy distribution measurement at a RF biased surface is proposed for monitoring the property of ion bombardments in capacitively coupled plasma sources. To obtain the ion energy distribution, the measured electrode voltage is analyzed based on the circuit model which is developed with the linearized sheath capacitance on the assumption that the RF driven sheath behaves like a simple diode for a bias power whose frequency is much lower than the ion plasma frequency. The method is verified by comparing the ion energy distribution function obtained from the proposed model with the experimental result taken from the ion energy analyzer in a dual cathode capacitively coupled plasma source driven by a 100 MHz source power and a 400 kHz bias power.

• 반도체디스플레이기술학회지
• /
• 제8권3호
• /
• pp.31-37
• /
• 2009

This paper presents one and two dimensional simulation results with discontinuous features (shocks) of capacitively coupled rf plasmas. The model consists of the first two and three moments of the Boltzmann equation for the ion and electron fluids respectively, coupled to Poisson's equation for the self-consistent electric field. The local field and drift-diffusion approximations are not employed, and as a result the charged species conservation equations are hyperbolic in nature. Hyperbolic equations may develop discontinuous solutions even if their initial conditions are smooth. Indeed, in this work, secondary electron emission is shown to produce transient electron shock waves. These shocks form at the boundary between the cathodic sheath (CS) and the quasi-neutral (QN) bulk region. In the CS, the electrons emitted from the electrode are accelerated to supersonic velocities due to the large electric field. On the other hand, in the QN the electric field is not significant and electrons have small directed velocities. Therefore, at the transition between these regions, the electron fluid decelerates from a supersonic to a subsonic velocity in the direction of flow and a jump in the electron velocity develops. The presented numerical results are consistent with both experimental observations and kinetic simulations.

• Transactions on Electrical and Electronic Materials
• /
• 제18권2호
• /
• pp.74-77
• /
• 2017

In this work, we investigated the etching characteristics of TaNO thin films and the selectivity of TaNO to $SiO_2$ in an $O_2$/CF4/Ar inductively coupled plasma (ICP) system. The maximum etch rate of TaNO thin film was 297.1 nm/min at a gas mixing ratio of O2/CF4/Ar (6:16:4 sccm). At the same time, the etch rate was measured as a function of the etching parameters, such as the RF power, DC-bias voltage, and process pressure. X-ray photoelectron spectroscopy analysis showed the efficient destruction of the oxide bonds by the ion bombardment, as well as the accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CF_4$-containing plasmas.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 센서 박막재료
• /
• pp.35-37
• /
• 2001

The Al etching was studied employing negative ions generated in the downstream $Cl_2$ plasma. In order to etch the Al film practically on an insulator covered electrode coupled with RF power, reduction of the negative self bias voltage (Vdc) was examined using a magnetic filter which trapped electrons. Addition of $SF_6$ and $H_2$ to a $Cl_2/BCl_3$ mixture reduced significantly Vdc.

• 한국진공학회지
• /
• 제4권1호
• /
• pp.12-17
• /
• 1995

Diamondlike carbon(DLC)films having good characteristics in mechanical and optical properties, were synthesized by rf-plasma enhanced chemical vapor deposition method. Methane, methane-hydrogen, or methane-argon were used as source gases. The infrared transparency and composition of the films were investigate. Especially, the anti-reflection effect of KLC film in infrared region was confirmed by depositing it on Ge/Si sample. When DLC films were deposited on the plastic substrates and thermal distortion, which were originated before and during deposition, respectively, played a role as a crack source of the films.

• 한국진공학회지
• /
• 제1권1호
• /
• pp.145-152
• /
• 1992

Si surfaces exposed to CHF3/C2F6 gas plasmas ih reactive ion etching (RIE) have been characterized by X-ray photoelectron spectroscopy (XPS). CHF3/C2F6 gas plasma exposure of Si surface leads to the deposition of residual film containing carbon and fluorine. The narrow scan spectra of C 1s show various bonding states of carbon as C-Si, C-F/H, C-CFx(x $\leq$ 3), C-F, C-F2, and C-F3. The chemical bonding states of fluorine are described with F-Si, F-C and F-O. And the oxygen and silicon are also detected. The effects of parameters for reactive ion etching as CHF3/C2F6 gas ratio, RF power, and pressure are investigated.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2000년도 하계학술대회 논문집 C
• /
• pp.2044-2046
• /
• 2000

A system to monitor the ion mass and charge-state as well as plasma potential value during plasma source ion implantation (PSII) has been developed. It was tested with 30-kV PI3D setup using alternatively hot cathode do (HC) and inductively coupled RF (ICP) discharge sources. The design and performance of the system will be described, and experimental results in nitrogen and argon plasmas produced by modular HC-ICP source will be discussed.