• Title/Summary/Keyword: RF equivalent circuit

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A Study of Micro, High-Performance Solenoid-Type RF Chip Inductor (Solenoid 형태의 소형.고성능 RF Chip 인덕터에 대한 연구)

  • Kim, Jae-Uk;Yun, Ui-Jung;Jeong, Yeong-Chang;Hong, Cheol-Ho;Seo, Won-Chang
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.5
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    • pp.283-288
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    • 2000
  • In this work, small-size, high-performance simple solenoid-type RF chip inductors utilizing an Al2O3 core material were investigated. Copper (Cu) wire with $40\mum$ diameter was used as the coils and the size of the chip inductor fabricated in this work was $2.1mm\times1.5mm\times1.0mm$. The external current source was applied after bonding Cu coil leads to gold pads electro-plated on each end of backsides of a core material. High frequency characteristics of the inductance (L), quality factor (Q), and impedance (Z) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). This HP4291B was also used to obtain the equivalent circuit and its circuit parameters of the chip inductors. This HP4291B was also used to obtain the equivalent circuit and its circuit parameters of the chip inductors. The developed inductors have the self-resonant frequency (SRF) of 1.1 to 3.1 GHz and exhibit L of 22 to 150 nH. The L of the inductors decreases with increasing the SRF. The Z of the inductors has the maximum value at the SRF and the inductors have the quality factor of 70 to 97 in the frequency range of 500 MHz to 1.5 GHz.

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Non-Quasi-Static RF Model for SOI FinFET and Its Verification

  • Kang, In-Man
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.2
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    • pp.160-164
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    • 2010
  • The radio frequency (RF) model of SOI FinFETs with gate length of 40 nm is verified by using a 3-dimensional (3-D) device simulator. This paper shows the equivalent circuit model which can be used in the circuit analysis simulator. The RMS modeling error of Y-parameter was calculated to be only 0.3 %.

Equivalent Parameter Modeling of Open Ring type DGS Resonator (분리된 링형 DGS 공진기의 등가 파라미터 모델링)

  • Mun, Seung-Min;Kim, Gi-Rae
    • The Journal of the Korea institute of electronic communication sciences
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    • v.9 no.10
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    • pp.1175-1180
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    • 2014
  • In this paper, the open ring type DGS(Defected Ground Structure) resonator, applicable to MMIC(Monolithic Microwave Integrated Circuit), is proposed to improve phase noise characteristics of RF oscillator. This resonator is planar type, therefore, it easy to design miniaturrized., and takes relatively high Q value. Modeling the equivalent parameter of resonator is needed, when designing the RF oscillator with resonator. The mathematical method to solve the equivalent parameter of the resonator from the measured results of resonator is introduced in this paper. To verify the method, DGS resonator with 5.8 GHz center frequency is fabricated, for measuring characteristics and calculating the equivalent parameter. The result from this process is compared with the data of the ADS simulation, and as a result both were identical.

An Efficient Multipaction Analysis of an Output Multiplexer for Satellite Applications

  • Uhm Man Seok;Lee Juseop;Yom In-Bok;Kim Jeong-Phill
    • Journal of electromagnetic engineering and science
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    • v.5 no.4
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    • pp.176-182
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    • 2005
  • In this paper, an efficient multipaction analysis method of a manifold multiplexer for satellite applications is presented. While FEM(Finite Element Method) is used for the multipaction analysis of the lowpass filter, the equivalent circuit model is used for the analysis of the channel filters and the manifold. Employing equivalent circuit model for multipaction analysis takes less time than using EM(Electromagnetic) field analysis method while keeping the accuracy of the multipaction analysis. This present analysis method is applied to the manifold multiplexer for Ka-band satellite transponders and the results show that the present method is as accurate as the conventional EM field analysis method.

Study of equivalent circuit modeling for microstrip structure using passive component (수동소자를 이용한 마이크로스트립 구조의 등가회로 모델링에 관한 연구)

  • Paek, Hyun;Kim, Kun-Tae;Kwon, So-Hyun;Kahng, Sung-Tek;Kim, Hyeong-Seok
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1434-1435
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    • 2008
  • In this paper, we propose a method that applies Vector Fitting(VF) and Adaptive Frequency Sampling(ASF) technique to the equivalent circuit model for RF passive components. VF and ASF schemes are implemented to obtain the rational functions. S parameters of the equivalent circuit model is compared to those of EM simulation in case of the microstrip structure with coupled bandpass filter.

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FDTD 방법을 이용한 3T MRI용 RF 코일의 해석

  • 이종오;박준서;명노훈;박부식;김용권;정성택
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.6
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    • pp.976-983
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    • 2000
  • In this paper, Bridcage type RF coils used widely as RF coils for MRI and its applicable type, spiral type RF coil are analyzed and designed using FDTD method. In low tesla (IT, 1.5T) MRI system, several tools have been used for the analysis and design of the RF coils for MRI. This includes, so-called, LC equivalent circuit method for predicting the resonance frequency of the coil and the Biot-Savart law to determine the field distribution within the coil. Both of the circuit analysis and Biot-Savart law are low frequency techniques. Therefore, at high frequency applications, the circuit model approximation breaks down because the coil geometry is a significant fraction of the wavelength. In this paper, we analyzed and designed RF coils for 3T MRI using FDTD method. This method is a full wave analysis and very accurate at low and high frequencies. Also, this RF coils are actually fabricated and FDTD models of RF coils for MRI are proven.

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A Study on Measurement of Semiconductor Package in RF Regime (RF대역에서의 반도체 package 특성 측정에 관한 연구)

  • 박현일;김기혁;황성우
    • Proceedings of the IEEK Conference
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    • 2000.11b
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    • pp.108-111
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    • 2000
  • The electrical characteristics of MQFP packages have been measured in RF regime. The s-parameter of the lead frame has been measured using the test fixture on which the do-capped package was mounted. A simple lumped equivalent circuit modeling of the lead frame and the test fixture can provide reasonable model parameters up to the frequency of 200 MHz.

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Accurate parameter extraction method for FD-SOI MOSFETs RF small-signal model including non-quasi-static effects (NQS효과를 고려한 FD-SOI MOSFET의 고주파 소신호 모델변수 추출방법)

  • Kim, Gue-Chol
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.10
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    • pp.1910-1915
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    • 2007
  • An accurate and simple method to extract equivalent circuit parameters of fully-depleted silicon-on-insulator MOSFETs small-signal modeling operating at RF frequencies including the non-quasi static effects is presented in this article. The advantage of this method is that a unique and physically meaningful set of intrinsic equivalent circuit parameters is extracted by de-embedding procedure of extrinsic elements such as parasitic capacitances and resistances of MOSFETs from measured S-parameters using simple Z- and Y- matrices calculations. The calculated small-signal parameters using the presented extraction method give modeled Y-parameters which are in good agreement with the measured Y-parameters from 0.5 to 20GHz.

SOP Package Modeling for RFIC (SOP RFIC 패키지 모델링)

  • 이동훈;어영선
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.36C no.11
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    • pp.18-28
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    • 1999
  • A new equivalent circuit model of package (SOP, Small Outline Package) is presented for designing radio frequency integrated circuits (RFIC). In the RF region, the paddle of a package does not work as an ideal ground. Further parasitics due to both coupling and loss have a substantial effect on MMIC. The equivalent circuit model and parameter extraction methodology for the electrical characteristics of the package are described by illustrating the SOP type packages. The accuracy of the model is evaluated by comparing the s-parameters of the commercial full-wave solver and those of HSPICE simulation with the circuit model. The proposed model shows an excellent agreement with full-wave analysis up to about 8GHz.

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Fabrication and Characterization of Buried Resistor for RF MCM-C (고주파 MCM-C용 내부저항의 제작 및 특성 평가)

  • Cho, H. M.;Lee, W. S.;Lim, W.;Yoo, C. S.;Kang, N. K.;Park, J. C.
    • Journal of the Microelectronics and Packaging Society
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    • v.7 no.1
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    • pp.1-5
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    • 2000
  • Co-fired resistors for high frequency MCM-C (Multi Chip Module-Cofired) were fabricated and measured their RF properties from DC to 6 GHz. LTCC (Low Temperature Co-fired Ceramics) substrates with 8 layers were used as the substrates. Resisters and electrodes were printed on the 7th layer and connected to the top layer by via holes. Deviation from DC resistance of the resistors was resulted from the resister pastes, resistor size, and via length. From the experimental results, the suitable equivalent circuit model was adopted with resistor, transmission line, capacitor, and inductor. The characteristic impedance $Z_{o}$ of the transmission line from the equivalent circuit can explain the RF behavior of the buried resistor according to the structural variation.

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