• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.40-44
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• 2000

In this paper, since the research on the etching of SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin film was few (specially Cl$_2$-base ), we had studied the surface reaction of SBT thin films using the OES in high density plasma etching as a function of rf power, dc bias voltage, and Cl$_2$/(C1$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction in our previous papers$^{1.2}$ . The change of Cl radical density that is measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhance to increase the etch rates of SBT thin films and these results were confirmed by XPS analysis.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.740-742
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• 1998

In this paper, we described the effect of rapid thermal annealing on the electrical properties of interfacial layer between various top electrodes and $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films. BST thin films were fabricated on Pt/TiN/$SiO_2$/Si substrate by RF magnetron sputtering technique. AI, Ag, and Cu films for the formation of top electrode were deposited on BST thin films by thermal evaporator. Top electrodes/BST/Pt capacitor annealed with rapid thermal annealing at various temperature. In $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films with Cu top electrode annealed at $500^{\circ}C$, the dielectric constant was measured to the value of 366 at 1.2 [kHz] and the leakage current was obtained to the value of $5.85{\times}10^{-7}\;[A/cm^2}$ at the forward bias of 2 [V].

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.128-128
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• 1999

산소이온 전도체로 잘 알려진 Yttira-Stabilizd Ziroconia(TSZ)는 연료전지, oxygen pumps, chemical gas sensor 등 다양한 electrochemical divices에 이용되는 고체 전해질의 하나이다. 특히 YSZ는 oxygen 및 oxygen과 평형상태에 있는 gas들을 검출하는 sensor의 electrolyte로서 가장 많이 쓰이고 있다. 현재 상용화되어 있는 YSZ Sensor는 전통적인 bulk 형태의 ceramic으로 제작된 것으로 충분한 ionic conductivity를 얻기 위해서는 $600^{\circ}C$이상의 operating temperature를 필요로 하나 YSZ를 박막으로 제조시 낮은 operating temperature를 뿐만 아니라 sensor의 소형화, 낮은 ohmic loss 및 다양한 응용이 가능한 장점을 가질 수 있다. 본 실험에서는 산소 이온 전도체로서 8mol%-YSZ 고체전해질을 RF-magnetron bias sputtering 법을 이용하여 증착하였다. 제조된 YSZ 박막을 이용한 산소감응 센서셀 구조는 SiO2/Ni-NiO/Pt/YSZ/Pt-기판이다. 센서셀의 정상상태에서의 기전력(electromotive force ; EMF)을 산소분압(Po:1.013$\times$103Ta ~1.013$\times$105Pa)과 측정온도(30$0^{\circ}C$~$700^{\circ}C$)를 변화시키며 측정하였다. 이론적인 기전력과 측정값 사이의 편차는 Po:1.565$\times$104Pa 이하의 산소분압에서는 컸지만 이 이상의 분압에서는 이론치에 근접한 값을 가졌다. 증착한 YSZ와 Ni-NiO 박막의 구조는 X-ray diffractometer(XRD)를 이용하여 결정구조를 알아 보았고, TSZ 박막의 표면 morphology 관찰은 Scanning electron microscopy(SEM) 이용하였다. 박막의 조성분석은 X-ray energy dispersive analysis(EDX)을 사용하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.99-99
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• 1999

투명전도막인 Ito(Indium Tin Oxide)는 flat panel display 와 solar cell 같은 optoelectronic 이나 microelectronic device에서 널리 이용되어 지고 있다. 현재 상용화되고 있는 거의 대부분의 ITO 박막은 sputtering법에 의해 제조되고 있으나 공정상의 이유로 15$0^{\circ}C$이상의 기판온도가 요구되어진다. 그런, 실제 display device 제조공정에서는 비정질 실리콘 박막이나 유기막 위에 ITO박막을 제작할 필요성이 증대되어 지고 있고, 또한 다른 전자소자에 있어서도 상온 ITO 박막 형성 공정에 대한 필요성이 증대되고 있다. 이러한 이유로 본 실험에서는 IBAE(Ion Beam Assisted Evsporation)을 이용하여 저온 ITO박막을 유기막 위에 증착하는 공정에 대한 연구를 수행하였다. 이렇게 증착된 ITO 박막의 결정성은 비정질이었다. 또한, 모든 display device 제작에는 식각공정이 필수인데 기존에 사용되고 있는 wet etching 법은 등방성 식각특성 때문에 미세 pattern 형성에 부적합？, 따라서 비등방성 식각에 용이한 plasma etching법을 사용하여 저온 증착된 ITO 박막의 식각특성을 알아보았다. 실험에 사용된 식각장비는 자장 강화된 유도결합형 플라즈마 식각장비(MEICP)를 사용하였으며, 13.56MHz의 RF power를 사용하였다. 식각조건으로 source power는 600W~1000W, 기판 bias boltage는 -100V~-250V를 가하였으며, Ar, CH4, O2, H2, BCl3의 식각 gases, 5mTorr~30mTorr의 working pressure 변화 그리고 기판 온도에 따른 식각특성을 관찰하였다. ITO 가 증착된 기판으로는 유기물 중 투명전도성 박막에 기판으로서 사용가능성이 클 것으로 기대되어지는 PET(polyethylene-terephtalate), PC(polycarbonate), 아크릴을 사용하여 기판 변화가 식각특성에 미치는 영향에 대해서 각각 관찰하였다. 식각속도의 측정은 stylus profiler를 이용하여 측정하였으며 식각후에 표면상태는 scanning electron spectroscopy(SEM)을 이용하여 관찰하였다.

• Journal of Information Display
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• v.10 no.4
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• pp.137-142
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• 2009

Transparent top-gate Al-Zn-Sn-O (AZTO) thin-film transistors (TFTs) with an $Al_2O_3$ protective layer (PL) on an active layer were studied, and a transparent 2.5-inch QCIF+AMOLED (active-matrix organic light-emitting diode) display panel was fabricated using an AZTO TFT backplane. The AZTO active layers were deposited via RF magnetron sputtering at room temperature, and the PL was deposited via two different atomic-layer deposition (ALD) processes. The mobility and subthreshold slope were superior in the TFTs annealed in vacuum and with oxygen plasma PLs compared to the TFTs annealed in $O_2$ and with water vapor PLs, but the bias stability of the TFTs annealed in $O_2$ and with water vapor PLs was excellent.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.185-189
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• 2001

In this paper, since the research on the etching of SrBi$_2$Ta$_2$$O_{9}$(SBT) thin film was few (specially Cl$_2$-base) we had studied the surface reaction of SBT thin films. We have used the OES(optical emission spectroscopy) in high density plasma etching as a function of RF power, dc bias voltage, and Cl$_2$/(Cl$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction. The change of Cl radical density that was measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhanced to increase the etch rates SBT thin films. These results were confirmed by XPS(x-ray photoelectron spectroscopy) analysis.s.

• The Korean Journal of Ceramics
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• v.2 no.2
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• pp.95-101
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• 1996

Variations of the leakage current behaviors and interface potential barrier $({\Phi}_B)$ of rf-sputter deposited (Ba, Sr)$TiO_3$ (BST) thin films with thicknesses ranging from 20 nm to 150nm are investigated as a function of the thickness and bias voltages. The top and bottom electrodes are dc-sputter-deposited Pt films. ${\Phi}_B$ critically depends on the BST film deposition temperature, postannealing atmosphere and time after the annealing. The postannealing under $N_2$ atmosphere results in a high interface potential barrier height and low leakage current. Maintaining the BST capacitor in air for a long time reduces the ${\Phi}_B$ from about 2.4 eV to 1.6 eV due to the oxidation. ${\Phi}_B$ is not so dependent on the film thickness in this experimental range. The leakage conduction mechanism is very dependent on the BST film thickness; the 20 nm thick film shows tunneling current, 30 and 40 nm thick films show Shottky emission current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.40-44
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• 2000

In this paper, since the research on the etching of SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin film was few (specially Cl$_2$-base ), we had studied the surface reaction of SBT thin films using the OES in high density plasma etching as a function of rf power, dc bias voltage, and Cl$_2$(Cl$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction in our previous papers$^{1.2}$ . The change of Cl radical density that is measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhance to increase the etch rates of SBT thin films and these results were confirmed by XPS analysis.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.118-118
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• 2003

In a rolling wire probe, a key component of an inspection apparatus for PDP electrode patterns, the electric performance of it is known to be strongly dependent on the surface condition of a collet pin, a needle pin, and a wire. However, the collet and needle pins rotate very rapidly in contact with each other, which results in the degradation of the surface by the heat and friction and finally the formation of black wear marks on the surface after a several hundred hours test. Once the black wear marks appear on the surface, the electric resistance of the probe increases sharply and so the integrity of the probe is severely damaged. In this experiment, TiN coating, which has excellent electric conductances and good wear-resistance, has been applied on the surface of collect and needle pins for preventing the surface damages. In order to achieve the homogeneous coating with a good adhesion property, special coating substrate stages and jigs were designed and applied during coating. TiN has been deposited using 99.999% Titanium target by a DC reactive sputtering method. According to the components and jigs, processing parameters, such as DC power, RF bias and the flow rate ratio of Ar and N$_2$ used as reactive gases, has been controlled to obtain good TiN films. Detailed problems and solutions for applying the new substrate stages and jigs will be discussed.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.98-103
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• 2016

The dry etching characteristics of SnO thin films were investigated using inductively coupled plasma (ICP) in Ar, $CF_4$, $Cl_2$ chemistries. the SnO thin films were deposited by reactive rf magnetron sputtering with Sn metal target. In order to study the etching rates of SnO, the processing factors of processing pressure, source power, bias power, and etching gas were controlled. The etching behavior of SnO films under various conditions was obtained and discussed by comparing to that of $SiO_2$ films. In our results, the etch rate of SnO film was obtained as 94nm/min. The etch rates were mainly affected by physical etching and the contribution of chemical etching to SnO films appeared relatively week.