• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.329-332
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• 1999

In this paper, BST((Bao.&o,dTi0:3) thin films were deposited by the rf magnetron sputtering method on Pt/$SiO_2$/Si substrate. Pt, $RuO_2$, Ag, Cu films for the formation of top electrode were deposited on BST thm films. And then Top Electrodes/BST/Pt capacitors were annealed with rapid thermal annealing(RTA) at various temperature. We have investigated effect of post-annealing on the electrical properties such as dielectric constant and leakage current of the capacitors. It was found that electrical properties of the capacitors were greatly depended on the annealing temperatures as well as the materials of top electrodes. In BST thin films with Pt top electrode was annealed at $700^{\circ}C$. the dielectric constant was measured to the value of 346 at l[kHzl and the leakage current was obtained to the value of $8.76\times10^8$[A/$\textrm{cm}^2$] at the forward bias of 2[V].

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1096-1098
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• 1999

The performance of as plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the optimum preparation conditions of MgO Protecting layer by RF unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP. The samples prepared with the do bias voltage of -10V showed lower discharge voltage, lower erosion rate as a consequence of ion bombardment, higher optic transparency and higher crack resistance in annealing process than those samples prepared by conventional magnetron sputtering or E-beam eraporation.

• Journal of the Korean institute of surface engineering
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• v.46 no.2
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• pp.61-67
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• 2013

Thin film solar cells have attracted much attention due to their high cell efficiency, comparatively low process cost, and applicability to flexible substrates. In particular, CIGS solar cells have been widely studied and produced because they demonstrated the highest cell efficiency. However, the deposition process of CIGS films generally includes the selenization process conducted at elevated temperature using toxic $H_2Se$ gas. To avoid this selenization process, CIGS thin films were, in this study, deposited by RF sputtering using single composite CIGS target. In addition, the effects of sputtering bias voltage and heat treatment on the microstructural and morphological changes in deposited CIGS films were investigated and discussed.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.51-54
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• 2017

TFTs (thin film transistors) were fabricated using a-SIZO (amorphous silicon-indium-zinc-oxide) channel by RF (radio frequency) magnetron sputtering at room temperature. We report the influence of various channel thickness on the electrical performances of a-SIZO TFTs and their stability, using TS (temperature stress) and NBTS (negative bias temperature stress). Channel thickness was controlled by changing the deposition time. As the channel thickness increased, the threshold voltage ($V_{TH}$) of a-SIZO changed to the negative direction, from 1.3 to -2.4 V. This is mainly due to the increase of carrier concentration. During TS and NBTS, the threshold voltage shift (${\Delta}V_{TH}$) increased steadily, with increasing channel thickness. These results can be explained by the total trap density ($N_T$) increase due to the increase of bulk trap density ($N_{Bulk}$) in a-SIZO channel layer.

• Korean Journal of Materials Research
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• v.17 no.11
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• pp.618-621
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• 2007

Chromium nitride (CrN) films were deposited on silicon substrate by RF magnetron sputtering assisted by inductive coupled nitrogen plasma without intentional substrate heating. Films were deposited with different levels of bombarding energy by nitrogen ions $(N^+)$ to investigate the influence of substrate bias voltage $(V_b)$ on the growth of CrN thin films. XRD spectra showed that the crystallographic structure of CrN films was strongly affected by substrate bias voltage. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) results showed that surface roughness and grain size of the CrN films varied significantly with bias voltage. For - 80 $V_b$ depositions, the CrN films showed bigger grain sizes than those of other bias voltage conditions. The lowest surface roughness of 0.15 nm was obtained from the CrN films deposited at .130 $V_b$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1103-1109
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• 2003

Crystalline carbon nitride films have been deposited by RF reactive magnetron sputtering system with negative DC bias. The carbon nitride films deposited on various substrates showed ${\alpha}$- C$_3$N$_4$,${\beta}$-C$_3$N$_4$ and lonsdaleite structures through XRD and FTIR We can find the grain growth of hexagonal structure from SEMI photographs, which is coincident with the theoretical carbon nitride unit cell. When nitrogen gas ratio is 70 % and RF power is 200 W, the growth rate of carbon nitride film on quartz substrate is about 2.1 $\mu\textrm{m}$/hr.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.9-14
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• 1998

Diamond-like carbon(DLC) films were deposited on buffer-layered ZnS substrates by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) method. Ge and GeC buffer layera were used between DLC and ZnS substrates to promote the adhesion of DLC on ZnS substrates. Ge buffer layers were sputter deposited by RF magnetron sputtering and $GeC^1$ buffer layers were deposited by same method except using acetylene reactive gas. The relatinship between film properties and deposition conditions was investigated using gas pressure, RF power and dc bias voltage as PECVD parameters. The hardness of DLC films were measured by micro Vickers hardness test and the adhesion of DLC films on buffer-layered ZnS substrates were studied by Sebastian V stud pull tester. The optical properties of DLC films on butter-layered ZnS substrates were characterized by ellipsometer and FTIR spectroscopy.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.98.1-98.1
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• 2016

PTFE (Polytetrafluoroethylene) 는 벌크 형태는 물론 박막으로도 독특한 특성을 나타내는 물질이다. 매우 낮은 마찰계수, 발수표면특성, 화학적 비반응성은 다양한 방면의 적용이 가능하게 한다. 두께 $1-2{\mu}m$ 이나 50 nm 이하의 박막의 형태로서 발수 특성은 스퍼터링 조건에 따라서는 벌크 PTFE의 특성보다 뛰어나다. 순수한 PTFE 타겟을 사용하여 얇은 PTFE 막 증착을 위해 RF (radio-frequency) 스퍼터링을 하였다. 스퍼터 타겟 건 파워, 공정 압력, 그리고 기판 스테이지와 Si wafer 나 다양한 시편에 인가되는 RF 바이어스 (bias) 등과 같은 스퍼터링 변수의 변화가 가능하다. 공정 변수에 따라서 RF 스퍼터링에 의한 순수한 PTFE 박막과 바이어스가 인가된 유사 PTFE 박막을 비교하여 탐구하였다. 스퍼터링에 의한 PTFE 코팅은 접촉각이 100도 또는 그이상의 초발수성을 나타내는 장점을 갖고 있고, 90% 이상의 높은 투과도를 나타낸다. PTFE 타겟을 사용한 종래의 일반적인 스퍼터링에 의하여, 일예로 실리콘 웨이퍼상에 증착된 코팅막은 낮은 경도와 기판과의 밀착력이 좋지 않은 문제를 갖고 있다. 높은 에너지 환경에서 만들어진 PTFE 코팅은 기존의 스퍼터링 방식으로 만들어진 코팅에 비해 다른 특성을 나타낸다. PTFE 막의 경도와 밀착력을 높이고자 bias를 인가한 RF 스퍼터링을 시도하였다. 코팅 접촉각, 투과도, 나노인덴터에 의한 경도, 그리고 스크래치 테스트에 의한 코팅막의 밀착력을 살펴보았다. PTFE 폴리머 타겟을 사용한 RF 스퍼터링으로 만들어진 고경도 PTFE 유사 코팅의 경도 변화 기구를 고찰하였다.

• Journal of the Semiconductor & Display Technology
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• v.13 no.1
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• pp.43-49
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• 2014

Zinc-tin oxides (ZTO) thin film transistors have been fabricated at different process pressure via re sputtering technique. TFT properties were improved by depositing channel layers at lower pressure. From the analysis of TFTs comprised of multi layer channel, deposited consecutively at different sputtering pressure, it was suggested that the electrical characteristics of TFTs were mainly affected by interfacial layer due to their high conductance, however, the stability under the NBIS condition was influenced by whole bulk layer due to low concentration of positive charges, which might be generated by the oxygen vacancy transition, from Vo0 to $Vo^{2+}$. Those improvements were attributed to increasing sputtered target atoms and decreasing harmful effects of oxygen molecules by adopting low sputtering pressure condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.243-243
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• 2010

$CN_x$ films fabricated by different deposition techniques to synthesize of $\beta-C_3N_4$ involve two problems; nitrogen deficiency and $sp^2$ hybridized bonding. Nitrogen contents in most of the thin films are lower than stoichiometric composition 57%