• 한국전자파학회논문지
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• 제25권1호
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• pp.70-75
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• 2014

본 논문에서는 데이터 통신 및 위치 인식이 가능한 IR-UWB(Impulse Radio Ultra-Wide Band) 송수신기 회로를 제안한다. UWB 수신기는 에너지 검출 방식의 OOK(On-Off Keying) 변조가 가능하도록 설계가 되었다. UWB pulse generator는 디지털 로직을 이용하여 설계되었으며, UWB 신호 송신시 발생할 수 있는 Side lobe를 제거하기 위한 가우시안 필터가 적용되었다. 측정된 수신기의 감도는 4 GHz 중심주파수와 1 Mbps PRF(Pulse Repetition Frequency)에서 -65 dBm으로 측정이 되었으며, 펄스당 에너지 효율은 20.6 pJ/bit로 측정되었다. 1.8 V 전원에서 DA를 포함한 전류 소모는 수신기과 송신기가 각각 27.5 mA와 25.5 mA이다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1297-1300
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• 2008

A conventional linear accelerator system requires a flat-topped pulse with less than ${\pm}$ 0.5% ripple to meet the beam energy spread requirements and to improve pulse efficiency of RF systems. A pulse transformer is one of main determinants on the output pulse voltage shape. The pulse transformer was investigated and analyzed with the pulse response characteristics using a simplified equivalent circuit model. The damping factor ${\sigma}$ must be >0.86 to limit the overshoot to less than 0.5% during the flat-top phase. The low leakage inductance and distributed capacitance are often limiting factors to obtain a fast rise time. These parameters are largely controlled by the physical geometry and winding configuration of the transformer. A rise time can be improved by reducing the number of turns, but it produces larger pulse droop and requires a larger core size. By tradeoffs among these parameters, the high-voltage pulse transformer with a pulse width of 10 ${\mu}s$, a rise time of 0.84 ${\mu}s$, and a pulse droop of 2.9% has been designed and fabricated to drive a klystron which has an output voltage of 284 kV, 30-MW peak and 60-kW average RF output power. This paper describes design optimization of a high-voltage pulse transformer for high-power pulsed applications. The experimental results were analyzed and compared with the design. The design and optimal tuning parameter of the system was identified using the model simulation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.472-472
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• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1550-1551
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• 2006

An L-band linear accelerator system for e-beam sterilization is under design for bio-technology application. The klystron-modulator system as RF microwave source has an important role as major components to offer the system reliability for long time steady state operation. A PFN line type pulse generator with a peak power of 71.5-MW, $7{\mu}s$, 285 pps is required to drive a high-power klystron. The high power pulse transformer has a function of transferring pulse energy from a pulsed power source to a high power load. The pulse transformer producing a pulse with a peak voltage of 275 kV is required to produce 30-MW peak and 60 kW average RF output power at the frequency of 1.3-GHz. We have designed the high power pulse transformer with 1:13 step-up ratio. The peak and average power capability is 71.5-MW (275 kV, 260 A at load side with $7{\mu}s$ pulse width) and 130 kW, respectively. In this paper, we present a system overview and initial design results of the high power pulse transformer.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1079-1081
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• 2007

An L-band Linear Accelerator System for E-beam sterilization is under construction for bio-technology application. The klystron-modulator system as an RF microwave source has an important role as major components to offer the system reliability for long time steady-state operations. A PFN line type pulse generator with a peak power of 71.5-MW, $7\;{\mu}s$, 285 pps is required to drive a high-power klystron. The high power pulse transformer has a function of transferring pulse energy from a pulsed power source to a high power load. The pulse transformer producing a pulse with a peak voltage of 275 kV is required to produce 30-MW peak and 60 kW average RF output power at the frequency of 1.3-GHz. We have designed the high power pulse transformer with 1:13 step-up ratio. The peak and average power capability is 71.5-MW (275 kV, 260 A at load side with $7\;{\mu}s$ pulse width) and 130 kW, respectively. In this paper, we present measurements and its analysis on the design parameters, and an initial test result as well as a design concept on the high-power pulse transformer.

• 한국광학회지
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• 제2권4호
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• pp.227-232
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• 1991

The possibility for the high intensity and energy possessing a short pulse in the HF chemical laser system which contained fluoride molecules (RF) was demonstrated theoretically through the numerical model simulation. The calculation was accomplished by assuming that the thermal branched chain mechanism of RF was occurred in the initiation step of $H_2+F_2$ chain reaction. Variations of the major chemicals and the temperature in the system were calculated as a function of time. An analysis was also performed to evaluate output pulse profile through parametric studies.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2005년도 전력전자학술대회 논문집
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• pp.198-200
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• 2005

The 2.5 GeV linac of the Pohang Light Source(PLS) is planed to be converted to a XFEL. The PAL XFEL requires a new 1.2-GeV linac that will be combined to the existing linac to increase a beam energy upto 3.7 GeV. The RF stability of 0.02 % is required for both RF phase and amplitude to get the XFEL output. This stability is mainly determined by a low level RF drive system and klystron-modulators. The stability level of the modulator has to be improved 10 times better to meet the pulse stability of 0.02 %. The regulation methods such as traditional de-Qing and precision inverter charging technology are reviewed to find out suitable upgrade scheme of the modulators.

• 한국통신학회논문지
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• 제28권12A호
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• pp.951-957
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• 2003

통신 시스템의 무선성능 요구조건 분석은 시스템의 성능을 예측하는 중요한 지표이다. 아직 표준안이 제정되지 않은 UWB(Ultra Wide Band) 시스템은 명확한 시스템 성능 요구조건을 유도하기 어렵다. 또한, 기존의 UWB 시스템과 멀티밴드 UWB 시스템의 무선성능 요구조건 분석에는 차이점이 있다. 이러한 차이점을 본 논문을 통해 분석하였으며, 이를 바탕으로 도출한 멀티밴드 UWB 시스템의 성능 요구조건을 본 논문에 기술하였다. 멀티밴드 UWB 시스템은 Sub-Band의 수에 따라 Throughput, 송신 최대 전력, 수신감도 등이 변화하는 것을 관찰할 수 있었다. 또한, 멀티패스의 영향으로 PRF(Pulse Repetition Frequency)를 변경하면 Link Margin은 증가하여 멀티패스 에너지 손실(Multi-path Energy Loss)에 대한 보상으로 멀티패스 마진(Multi-path Link Margin)이 발생하는 것을 알 수 있었으며 멀티패스 마진에 따라 수신신호 감도 및 간섭신호에 대한 저항성이 변화하는 것을 모의실험을 통하여 분석하였다.

• 한국재료학회지
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• 제21권12호
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• pp.703-707
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• 2011

The electrochromic properties of tungsten oxide films grown by RF sputtering were investigated. Among the sputter parameters, first the $Ar:O_2$ ratios were controlled with division into only an $O_2$ environment, 1:1 and 4:1. The structure of each film prepared by these conditions was studied by X-ray diffraction, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. The sputter-deposited tungsten oxide films had an amorphous structure regardless of the $Ar:O_2$ ratios. The chemical compositions, however, were different from each other. The stoichiometric structure and low-density film was obtained at higher $O_2$ contents. Electrochemical tests were performed by cyclic voltammetry and chronoamperometry at 0.05 M $H_2SO_4$ solutions. The current density and charge ratio was estimated during the continuous potential and pulse potential cycling at -0.5 V and 1.8 V, respectively. The film grown in a higher oxygen environment had a higher current density and a reversible charge reaction during intercalation and deintercalation. The in-situ transmittance tests were performed by He-Ne laser (633 nm). At higher oxygen contents, a big transmittance difference was observed but the response speed was too slow. This was likely caused by higher film resistivity. Furthermore, the effect of sputtering pressure was also investigated. The structure and surface morphology of each film was observed by X-ray diffraction and scanning electron microscopy. A rough surface was observed at higher sputtering pressure, and this affected the higher transmittance difference and coloration efficiency.

• Nuclear Engineering and Technology
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• 제56권4호
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• pp.1145-1152
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• 2024

To realize an initial objective of the negative ion-based neutral beam injection (N-NBI) at the Comprehensive Research Facility for Fusion Technology (CRAFT) test facility, which targets an H⁰ beam power of 2 MW at an energy of 200-400 keV and a pulse duration of 100 s, it is crucial to study the cesium dynamics of the negative ion source. Here a numerical simulation program CSFC3D is developed and applied to simulate the distribution and time dynamics of cesium during short pulses. The calculations show that most of the cesium on the plasma grid (PG) area originates from the release of cesium that is accumulated within the ion source in the plasma phase. Increasing the wall temperature reduces the loss of cesium on the wall of the ion source. Furthermore, the thickness of the cesium monolayer is directly influenced by the PG temperature. Both simulated and experimental results demonstrate that maintaining the PG temperature between 180 ℃ and 200 ℃ is essential for enhancing the performance of the ion source and optimizing the cesium behavior.