• Proceedings of the Plant Resources Society of Korea Conference
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• 2018.04a
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• pp.74-74
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• 2018

Abeliophyllum distichum is Korea Endemic Plants and its genetic resources found from Korea only. Bioactivities of A. distichum such as antioxidant, anti-cancer, and anti-inflammatory studies have been proved through many researches. Whereas, there are no studies on the biological activity of its callus extracts. In this study, we investigated the antioxidant activities of callus extracts derived from A. distichum and its inhibitory effect on oxidative DNA damage. The antioxidant activities were assessed using radical scavenging assays with DPPH, ABTS, and reducing power assay and the inhibitory effects on oxidative DNA damage were measured using ${\varphi}-174$ RF I plasmid DNA cleavage assay. In addition, callus extracts derived from A. distichum showed high antioxidant acitivties and no cytotoxicity in NIH/3T3. Also, it has significantly suppressed expression of ${\gamma}$-H2AX and p53 protein and mRNA levels in NIH/3T3 cells exposed to oxidative stress. Therefore, the callus extracts derived from A. distichum has potential antioxidant activity that can provide protective effects against the oxidative DNA damage caused by free radicals. This study suggest that it is valuable as cosmetics and medicine for antioxidant and cancer preventive materials.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.1
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• pp.29-35
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• 2016

We have demonstrated a $Ti:LiNbO_3$ electro-optic electric-field sensors utilizing a $1{\times}2$ Y-fed balanced-bridge Mach-Zehnder interferometric (YBB-MZI) modulator which uses a 3-dB directional coupler at the output and dipole patch antenna. The operation and design were proved by the BPM simulation. A dc switching voltage of ~16.6 V and an extinction ratio of ~14.7 dB are observed at a wavelength of $1.3{\mu}m$. For a 20 dBm rf power, the minimum detectable electric-fields are ~1.12 V/m and ~3.3 V/m corresponding to a dynamic range of about ~22 dB and ~18 dB at frequencies 10 MHz and 50 MHz, respectively. The sensors exhibit almost linear response for the applied electric-field intensity from 0.29 V/m to 29.8 V/m.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.411-412
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• 2008

We have studied a property change of organic light-emitting diodes (OLED) due to an indium tin oxide (ITO) surface reformation. The characteristics of OLED were improved by oxygen plasma processing of an ITO in this work. ITO is widely used as a transparent electrode in light-emitting devices, and the OLED device performance is sensitive to the surface properties of the ITO. The OLED devices with the structure of ITO/TPD(50nm)/$Alq_3$(70nm)/LiF(0.5nm)/Al(100nm) were fabricated, and the surface properties of ITO were investigated by using various characterization techniques. The oxygen plasma process of an ITO was processed by using RF power of 125W and oxygen partial pressure of $2\times10^{-2}$ Torr. The oxygen plasma processing of an ITO processed for 0/1/2/3/4min. Current-voltage-luminance characteristics of the devices show that turn-on voltage is 4V for 2min device and the luminance reaches about 27,000cd/$m^2$ for 4min device. The current efficiency shows that 3min device becomes saturated to be about 8cd/ A. They show that emission was from the $Alq_3$ layer, because the peak wavelength is about 525nm. View angle-dependent emission spectra show that the emission intensity decreases as the angle increases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.826-830
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• 2013

In this paper, we carried out the investigations of both etch characteristics and mechanisms for the $SnO_2$ thin films in $O_2/BCl_3/Ar$ plasma. The dry etching characteristics of the $SnO_2$ thin films was studied by varying the $O_2/BCl_3/Ar$ gas mixing ratio. We determined the optimized process conditions that were as follows: a RF power of 700 W, a DC-bias voltage of - 150 V, and a process pressure of 2 Pa. The maximum etch rate was 509.9 nm/min in $O_2/BCl_3/Ar$=(3:4:16 sccm) plasma. From XPS analysis, the etch mechanism of the $SnO_2$ thin films in the $O_2/BCl_3/Ar$ plasma can be identified as the ion-assisted chemical reaction while the role of ion bombardment includes the destruction of the metal-oxide bonds as well as the cleaning of the etched surface form the reaction products.

• Proceedings of the KIPE Conference
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• 2013.07a
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• pp.132-134
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• 2013

포항가속기 연구소에서 4세대 전자를 가속시키기 위하여 RF 공급원으로 사용하는 펄스 모듈레이터의 고전압 안정도는 100ppm 이하의 고전압이 요구된다. 따라서 본 연구소에서 산업체와 연계하여 인버터를 적용한 고정밀 고전압 CCPS를 개발하였다. 개발된 고정밀 고전압 CCPS의 사양은 50 kV, 5 kJ/sec, 100 ppm 이하 1set와 50 kV, 30 kJ/sec, 1000 ppm 4set이다. 고정밀 고전압 CCPS를 시험하기 위하여 4세대용 200 MW 모듈레이터를 설치하여 시험하였다. 본 논문에서는 고정밀 고전압 CCPS의 개발하고 제작하여 모듈레이터에 적용하여 시험한 내용을 보이고자 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.41-43
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• 1999

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.1
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• pp.25-33
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• 1998

In this paper, we describe a single-gate MESFET mixer at PCS(Personal Communication Service) frequency band. The PCS frequency band is 1965~2025 MHz in FR and 140 MHz in IF irrespectly. The design of the mixer was executed by microwave simulator, EEsof Libra. The matching network is consisted of rectangular inductor, MIM capacitor and open stub. The ma- nufacture work was accomplished by the micro-pen and wedge-bonder. The mixer showed $6.69\pm0.65$ dB of conversion gain, $-14.9\pm3.5$dB of RF reflection coefficient and 57.83 dB of LO/IF isolation at 10 dBm of LO power when LO frequency is 1855 MHz. When this mixer is used at PCS terminal, IF-amplifier which compensates the conversion loss of diode mixer may be omitted.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.5 s.120
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• pp.553-562
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• 2007

In this paper, we designed and implemented the system for telemetering ELF(Extremely Low Frequency) magnetic field intensity. The magnetic field measurement system used a 3-axis magnetic field sensor to measure the magnetic field with isotropy and the equalizer to compensate the frequency characteristic in band. By multiplexing three output signals of the magnetic field sensor in time domain, we got the uniform gain and frequency characteristic among three axes. This system was designed that the magnetic field measurement level range was $0.01{\sim}10.0\;uT$ and the measurement frequency band was $40{\sim}180\;Hz$. The control system would access to the magnetic field measurement system with RF and the maximum access distance was 1.0 km. We confirmed that the measurement level error of the fabricated system was within 5 %. The fabricated system was installed to a golf practice range where a high voltage power transmission line was crossed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.3
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• pp.278-284
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• 2010

In this paper, a millimeter-wave detector using zero-bias schottky diode is designed and fabricated at W-band. It consists of LNA(Low Noise Amplifier) and detector module to improve sensitivity. LNA case with a highly stop-band characteristic is designed to prevent the oscillation by LNA MMIC chip. Diode detector of planar structure is fabricated for the easy connection with LNA module and zero bias Schottky diode is utilized. In practice, the fabricated diode detector have shown the detection voltage of 20~500 mV to the RF input power of -45~-20 dBm. The proposed W-band detector can be applicable to the passive millimeter image system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.2
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• pp.138-141
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• 2018

In this paper, we describe the designed digital waveform of a linear frequency-modulated (FM) chirp signal using field-programmable gate arrays (FPGAs) for image radar, and this signal is modulated with an I-Q modulator, and multiplied by 24 frequency multipliers to obtain a 94-GHz W-band wideband chirp generator. The developed chirp generator is an FM signal with a 94-GHz carrier frequency and a 960-MHz bandwidth, and the flatness is less than 1.0 dB at intermediate frequency (IF) (3.9 GHz), 2.0 dB in the W-band, and it has a 0.3-W output power in the W-band.