• Journal of Korea Society of Industrial Information Systems
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• v.6 no.2
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• pp.31-37
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• 2001

In this paper, We designed and implemented an RF module for WLL multi-channel personal stations. Then, we experimentally evaluated in receiving sensitivity, adjacent channel interference selectivity and spurious response limit. From the measurement results on the RF module for WLL multi-channel personal stations, we observed and confirmed as follows: First, the variation in output power level was kept to be less than 30 dBm in the range of the input power level from -90 dBm to -30dBm. This measurement result confirmed the dynamic range of 60 dB. Secondly, at the output stage of the RF module, the gain flatness in the pass band was measured to be less than 2dB, which confirmed a precise control of the bandspread signals. Thirdly, at the RF module, the bandwidth and power level in transmission were measured to be 10 MHz, respectively we note that these features satisfy the design specifications.

• Journal of Satellite, Information and Communications
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• v.10 no.1
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• pp.88-91
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• 2015

Wireless power transmission (WPT) is a technology using free space as a conductor for transmitting electric power, which aims to transfer not just the transmission signal but also the electrical energy itself. This paper takes issue with the microwave wireless transmission technology utilizing in long-distance transmission. To construct the WPT system, several components are needed, such as RF Oscillator which converts AC power to RF through DC status, high gain antenna and RF rectifier that converts RF back to DC. The array topology is good a candidate for wide use. The objective of this research is to study the efect of the WPT systmem on electric power system.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.4
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• pp.145-149
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• 2016

The effect of process parameters such as plasma composition, ICP (Inductively Coupled Plasma) source power and rf chuck power on the etch characteristics of GaN epitaxy layer was studied. $Cl_2/Ar$ ICP discharges showed higher etch rates than $SF_6/Ar$ discharges because of the higher volatility of $GaCl_x$ etch products than $GaF_x$ compounds. As the Ar ratio increases in the $Cl_2/Ar$ ICP discharges, the etch anisotropy was enhanced due to the improved physical component of the etching. For both plasma chemistries, the GaN etch rate increased continuously as both the ICP source power and rf chuck power increased, and a maximum etch rate of 251.9 nm/min was obtained at $13Cl_2/2Ar$, 750W ICP power, 400W rf chuck power and 10 mTorr condition.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.3A
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• pp.319-323
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• 2007

In this paper, the automatic precision measurement of RF voltage has been done using the power and impedance standards [1] in the frequency range of 50 to 1000 MHz. A coaxial microcalorimeter and an automatic network analyzer were used for the determination of the RF-DC differences and the total uncertainty is about 1.0 %. A HP computer, a commodore computer and IEEE-488 interface bus were used for measuring the effective efficiency of thermistor mount and the RF-DC difference of thermal voltage converter, All processes of measurement were accomplished by self-developed program automatically.

• Korean Journal of Materials Research
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• v.7 no.1
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• pp.27-32
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• 1997

본 연구에서는 고밀도 플라즈마를 형성하는 planar magnetron RF 플라즈마 CVD를 이용하여 DLC(diamond-like carbon) 박막을 합성하였다. 이 방법을 이용하여 DLC 박막을 합성한다면 고밀도 플라즈마 때문에 종래의 플라즈마 CVD(RF-PECVD)법보다 증착속도가 더욱더 향상될 것이라는 것에 착안하였다. 이를 위해 magnetron에 의한 고밀도 플라즈마가 존재할 때도 역시 DLC박막형성에 미치는 RF 전력과 반응가스 압력이 중요한 반응변수인가에 대해 조사하였고, 일정한 자기장의 세기에서 RF전력과 DC self-bias 전압과의 관계를 조사하였다. 또한 RF전력변화에 따른 박막의 증착속도와 밀도를 측정하였다. 본 연구에 의해 얻어진 박막의 증착속도는 magnetron에 의한 이온화율이 매우 높아 기존의 RF-PECVD 법보다 매우 빠르며, DLC박막의 구조와 물질특성을 알아보기 위해 FTIR(fourier transform infrared)및 Raman 분광분석을 행한 결과 전형적인 양질의 고경질 다이아몬드상 탄소박막임을 알 수 있었다.

• Nuclear Engineering and Technology
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• v.33 no.2
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• pp.201-208
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• 2001

The high power RF transmission line components are required for transmitting MW level RF power continuously in RF heating and current drive system which heat the plasma and produce plasma current in fusion reactor The liquid stub and phase shifter is proposed as the superior to the conventional stub and phase shifter. Experimental results show that they are reliable and easy to operate compared to the conventional stub and phase shifter. There is no distortion of reflected power during the raising of the liquid level. RF breakdown voltage is over 40kV. Temperature increment of the liquid is expected not to be severe. These results verify that the liquid stub and phase shifter can be used reliably in the high power continuous RF facilities.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.299-301
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• 2004

Inductively coupled plasma is commonly used for electrodeless lamp due to its ease of plasma generation. Optical characteristics significantly depend on the RF power and gas pressure of the plasma. This paper describes the measurement of luminous efficacy as a function of RF power and gas pressure with a goal of finding optimal operating conditions of the electrodeless lamp. The gas pressure was varied from 10 [mTorr] to 100 [mTorr] and the RF power was varied from 10 [W] to 120 [W]. It was found that the luminous flux tends to be decreased when argon pressure is increased, and the luminous flux is increased as RF fewer is increased. It was also found that the luminance efficacy is high when the argon pressure is low and when the RF power is low.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.68-71
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• 2021

In this paper, GaN-SBD devices with excellent breakdown voltage and frequency characteristics for use in high-power microwave wireless power transmission has been modeled for PSpice circuit simulation. The RF-DC conversion circuits were simulated and compared with a commercial Si-SBD device. Although the modeled GaN-SBD devices had lower RF-DC conversion efficiency compared to Si-SBD at 2.4 and 5.8 GHz, it was confirmed through PSpice circuit simulations that they can be used sufficiently according to the required application circuit in a high power situation.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.4
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• pp.101-108
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• 1998

We examine experimentally the dependence of output width on DC bias, RF power, and RF frequency in a gain-switched semiconductor laser. The optimum short pulses are obtained around threshold DC bias. The DC bias to generatoe shorter pulses decreases the RF power increases, whereas it increases to above threshold as the RF freqnecy increases. The pulse width becomes less sensitive to the variations of the DC bias, as the RF bias, or frquency increases.

• Korean Journal of Materials Research
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• v.15 no.10
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• pp.621-625
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• 2005

Effects of rf power, pressure, sputtering gas composition, and substrate temperature on the deposition rate of the $WC_x$ coatings were investigated. The effects of rf power and sputtering gas composition on the hardness and corrosion resistance of the $WC_x$ coatings deposited by reactive sputtering were also investigated. X-ray diffraction (XRD) and Auger electron spectroscopy (AES) analyses were performed to determine the structures and compositions of the films, respectively. The hardnesses of the films were investigated using a nanoindenter, scanning electron microscopy, ana a salt-spray test, respectively. The deposition rate of the films was proportional to rf power and inversely proportional to the $CH_4$ content of $Ar/CH_4$ sputtering gas. The deposition rate linearly increased with increasing chamber pressure. The hardness of the $WC_x$ coatings Increased as rf power increased. The highest hardness was obtained at a $Ar/CH_4$ concentration of $10 vol.\%$ in the sputtering gas. The hardness of the $WC_x$ film deposited under optimal conditions was found to be much higher than that of the electroplated chromium film, although the corrosion resistance of the former was slightly lower than that of the latter.