• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권11호
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• pp.596-602
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• 2000

Diamond thin films were synthesized on WC-Co substrate at various experimental parameters using 13.56MHz RF PACVD)radio frequency plasma-assisted chemical vapor deposition). In order to increased the nucleation density, the WC-Co substrate was polished with 3${\mu}m$ diamond paste. And the WC-Co substrate was preatreated in $HNO_3\;:\;H_2O$ = 1:1 and $O_2$ plasma. In $H_2-CH_4$ gas mixture, the crystallinity of thin film increased with decreasing $CH_4$ concentration at 800W discharge power and 20torr reaction pressure. In $H_2-CH_4-O_2$ gas mixture, the crystallinity of thin film increased with increasing $O_2$ concentration at 800W discharge power, 200torr reaction pressure and 4% $CH_4$ concentration.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1699-1701
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• 1999

We prepared diamond thin films on WC-Co substrate in $H_2-CH_4-O_2$ gas mixture using 13.56MHz RF PACVD. Scanning electron microscopy, X-ray diffraction and Raman spectroscopy were used to analyze the nature of thin film. and Rockwell test to analyze the adhesion between thin film and substrate. The good diamond quality and adhesion was appeared with cemented tungsten carbide substrate treated with oxygen plasma.

• 전자공학회논문지T
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• 제36T권3호
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• pp.13-18
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• 1999

다이아몬드 박막은 RF PACVD법에 의해 수소와 메탄으로부터 실리콘 웨이퍼 상에 성장되어졌다. 박막 성장 전에 표면의 핵생성 밀도를 증가시키기 위하여 1㎛의 다이아몬드 페이스트로 기계적 흡집을 내어 사용하였다. 메탄 농도를 변화시켜 제작한 박막에 대한 평가는 XRD, SEM 및 Raman Spectroscopy에 의해 이루어졌다. 성장된 박막의 결정성은 메탄 농도가 낮을수록 증가되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.856-857
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• 1998

Hydrogenated amorphous carbon nitride [a-C:H(N)] films were deposited on pretreated silicon(100) substrate in activated gas phase using. RF plasma-assisted CVD. We measured the FT-IR spectrum to investigate $C{\equiv}N$ stretching mode(nitrile), C-H stretching mode, C-H bending mode, C=C stretching mode C=N(imino) mode, and the EDX to investigate the ratio of N to C(0.25). By the results of FT-IR and EDX spectrum, We confirmed that hydrogenated amorphous carbon nitride films successfully were synthesized by RF-PACVD

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.452-455
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• 2000

Diamond thin films were synthesized on WC-Co substrate at various experimental parameters using 13.56MHz RF PACVD(radio frequency plasma-assisted chemical vapor deposition). In order to increase the nucleation density, the WC-Co substrate was polished with 3$\mu\textrm{m}$ diamond paste. And the WC-Co substrate was pretreated in HNO$_3$: H$_2$O = 1:1 and O$_2$ plasma. In H$_2$-CH$_4$gas mixture, the crystallinity of thin film increased with decreasing CH$_4$concentration at 800W discharge power and 20torr reaction pressure. In H$_2$-CH$_4$-O$_2$gas mixture, the crystallinity of thin film increased with increasing O$_2$concentration at 800W discharge power, 20torr reaction pressure and 4% CH$_4$concentration.

• 한국세라믹학회지
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• 제26권3호
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• pp.323-330
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• 1989

Wear restance titanium carbonitride (TiCN) films were deposited on the SKH9 tool steels and WC-Co cutting tools by plasma assisted chemical vapor deposition (PACVD) using a gaseous mixture of TiCl4, CH4, N2, H2 and Ar. The effects of the deposition temperature and RF(Radio Frequency) power on the deposition rate, chlorine content and crystallinity of the deposited layer were studied. The experimental results showed that the stable and adherent films could be obtained above the deposition temperature of 47$0^{\circ}C$ and maximum deposition rate was obtained at 485$^{\circ}C$. The deposition rate was much affected by RF power and maximum at 40W. The crystallinity of the deposited layer was improved with increasing the deposition temperature and RF power. The TiCN films deposited by PACVD contained much chlorine. The chlorine content in the TiCN films was affected by deposition conditions and decreased with improving the crystallinity of the deposited layer. The deposited TiCN films deposited at the deposition temperature of 52$0^{\circ}C$ and RF power of 40W had an uniform surface with very fine grains of about 500$\AA$ size. The microhardness of the deposited layer was 2,300Kg/$\textrm{mm}^2$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1514-1515
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• 1998

Diamond thin films were deposited on n-type (100) Si wafers from $H_2-CH_4$ gas mixture by rf PACVD. Prior to deposition, mechanical scratching was done to improve density of nucleation sites with diamond paste of 3${\mu}m$. The microstructure of deposited diamond thin films was studied by using the following conditions : discharge power of 500W, $H_2$ flow rate of 50sccm, reaction pressure of 20torr, and $CH_4/H_2$ ratio of 0.3$\sim$1%. The deposited diamond thin films showed that the crystallite was increased at the lower methane concentration. The deposited thin films were characterized by Scanning Electron Microscopy. Raman Spectroscopy and Fourier-Transform Infrared Spectroscopy.

• 한국진공학회지
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• 제11권1호
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• pp.8-15
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• 2002

진공 여과 음극 아크(Filtered Vacuum cathodic Arc, FVA) 증착법을 이용하여 초경질 다이아몬드상 카본 박막(tetrahedral amorphous carbon, ta-C)을 합성하였다. FVA 증착법은 이온화율이 높고, 치밀한 다이아몬드상 카본 박막 증착에 적당한 이온 에너지를 갖는 등의 장점을 갖고 있다. 하지만, 이때의 카본 이온 에너지는 아크 소스의 조작만으로는 쉽게 조절되지 못한다는 단점을 갖고 있다. 다양한 물성 조절을 위해, 본 연구에서는 기판에 바이어스 전압을 인가하여 ta-C박막의 기계적 물성을 제어하였다. 기판의 바이어스 전압이 증가함에 따라, 기계적 물성 및 밀도는 바이어스 전압이 -100 V인 경우에 최대값을 보였다. 최대 경도값 및 밀도는 각각 55$\pm$3 GPa, 3.6$\pm$0.4 g/㎤로 이는 RF PACVD나 이온빔으로 증착되는 DLC의 3~5배에 이르는 값이다. 조성 및 구조 분석은 Raman spectroscopy와 NEXAFS spectroscopy를 이용하여 조사하였다. 각 바이어스 전압에 따른 박막의 물성 변화는 박막내의 $sp^2$와 $sp^3$ 혼성결합 분율의 변화의 관점으로 이해할 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.786-788
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• 1998

Synthetic diamond films were deposited on pretreated silicon substrate in activated gas phase using RF plasma-assisted CVD. We investigated the influence of $O_2$ gas on facets of diamond crystal. In $H_2-CH_4-O_2$ gas mixture, the increase of oxygen concentration lead to well-faceted diamond particles and increasing crystallinity of diamond films. The deposited diamond films were analyzed by SEM, XRD, Raman spectroscopy.

• 한국전기전자재료학회논문지
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• 제14권7호
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• pp.584-589
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• 2001

Diamond thin films were synthesized on WC-Co substrate by RF PACVD(radio frequency plasma-assisted chemical vapor deposition) technique with H$_2$-CH$_4$-O$_2$ gas mixture. WC-Co substrate was pre-treated in HNO$_3$solution, scratched with 3$\mu\textrm{m}$ diamond paste and exposed in the O$_2$ plasma before deposition. The diamond thin film prepared at 11% oxygen concentration showed the best quality of good adhesion and wear resistance at various oxygen concentration with the fixed 5% CH$_4$ concentration.